Your browser does not support JavaScript or JavaScript is not enabled. Without JavaScript some functions of this webapplication may be disabled or cause error messages. To enable JavaScript, please consult the manual of your browser or contact your system administrator.

Project

Access to European Infrastructure for Nanoelectronics

Information

Project Team

Organisations

Outputs and Outcomes

Publications

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba AlaeiMatteo BorgaElena FabrisStefaan DecoutereJohan LauwaertBenoit Bakeroot

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

2024

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba AlaeiMatteo BorgaElena FabrisStefaan DecoutereJohan LauwaertBenoit Bakeroot

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

2024

A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology

Urmimala ChatterjeeHerbert De PauwOlga SyshchykThibault CosnierAnurag VohraStefaan Decoutere

A1 Journal Article in SOLID-STATE ELECTRONICS

2023