Project

YESvGAN: Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Acronym
YESvGaN
Duration
01 May 2021 → Ongoing
Funding
European funding: various
Research disciplines
  • Natural sciences
    • Electronic (transport) properties
    • Semiconductors and semimetals
    • Surfaces, interfaces, 2D materials
    • Materials physics not elsewhere classified
  • Engineering and technology
    • Semiconductor devices, nanoelectronics and technology
Keywords
GaN high-power tranistor wide band gap transistor
 
Project description

YESvGaN will establish a new class of vertical GaN power transistors which combines the performance benefits of vertical Wide Band Gap (WBG) transistors with the cost advantages of established silicon technology. These transistors can replace IGBTs and thus reduce power conversion losses in many price-sensitive applications ranging from power supplies in data centers to traction inverters for electric vehicles. YESvGaN covers the development of the required new technology all the way from wafer to application.