Project

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Acronym
YESvGaN
Duration
01 May 2021 → Ongoing
Funding
European funding: various
Research disciplines
  • Natural sciences
    • Electronic (transport) properties
    • Semiconductors and semimetals
    • Surfaces, interfaces, 2D materials
    • Materials physics not elsewhere classified
  • Engineering and technology
    • Semiconductor devices, nanoelectronics and technology
Keywords
GaN high-power tranistor wide band gap transistor
 
Project description
No data available