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Onderzoeker
Stéphane Burignat
Profiel
Projecten
Publicaties
Activiteiten
Prijzen & Erkenningen
26
Resultaten
2014
A technology based complexity model for reversible Cuccaro ripple-carry adder
Stéphane Burignat
Alexis De Vos
A2
Artikel in een tijdschrift
in
JOURNAL OF LOW POWER ELECTRONICS
2014
Designing garbage-free reversible implementations of the integer cosine transform
Alexis De Vos
Stéphane Burignat
Robert Glück
Torben Ægidius Mogensen
Holger Bock Axelsen
Michael Kirkedal Thomsen
Eva Rotenberg
Tetsuo Yokoyama
A1
Artikel in een tijdschrift
in
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS
2014
Energy consumption by reversible circuits in the 130 nm and 65 nm nodes
Stéphane Burignat
Alexis De Vos
A2
Artikel in een tijdschrift
in
JOURNAL OF LOW POWER ELECTRONICS
2014
2012
Garbageless reversible implementation of integer linear transformations
Stéphane Burignat
Kenneth Vermeirsch
Alexis De Vos
Michael Thomsen
C1
Conferentie
2012
Reversible implementation of a discrete integer linear transformation
Alexis De Vos
Stéphane Burignat
Michael Kirkedal Thomsen
A1
Artikel in een tijdschrift
in
JOURNAL OF MULTIPLE-VALUED LOGIC AND SOFT COMPUTING
2012
2011
Interfacing reversible pass-transistor CMOS chips with conventional restoring CMOS circuits
Stéphane Burignat
Michael Kirkedal Thomsen
Michal Klimczak
Mariusz Olczak
Alexis De Vos
C1
Conferentie
2011
Reversible computation, a quantum-inspired low-consumption viable technology?
Stéphane Burignat
C1
Conferentie
2011
Test of a majority-based reversible (quantum) 4 bits ripple-carry adder in adiabatic calculation
Stéphane Burignat
Alexis De Vos
C1
Conferentie
2011
Towards the limits of cascaded reversible (quantum-inspired) circuits
Stéphane Burignat
Mariusz Olczac
Michal Klimczak
Alexis De Vos
C1
Conferentie
2011
2010
Analog/RF performance of sub-100 nm SOI MOSFETs with non-classical gate-source/drain underlap channel design
A Kranti
R Rashmi
Stéphane Burignat
J-P Raskin
GA Armstrong
P1
Conferentie
2010
Conduction par pièges dans les films minces de dioxyde de silicium
Stéphane Burignat
Boek
2010
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
T Rudenko
V Kilchytska
Stéphane Burignat
J-P Raskin
F Andrieu
O Faynot
Y Le Tiec
K Landry
A Nazarov
VS Lysenko
et al.
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2010
Reversible implementation of a disrete linear transformation
Alexis De Vos
Stéphane Burignat
Michael Thomsen
C1
Conferentie
2010
Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel
Stéphane Burignat
D Flandre
MK Md Arshad
V Kilchytska
F Andrieu
O Faynot
J-P Raskin
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2010
2009
Drain/substrate coupling impact on DIBL of ultra thin body and BOX SOI MOSFETs with undoped channel
Stéphane Burignat
MKM Arshad
J-P Raskin
V Kilchytska
D Flandre
O Faynot
P Scheiblin
F Andrieu
C1
Conferentie
2009
Substrate effects in sub-32 nm ultra thin SOI MOSFETs with thin buried oxide
Stéphane Burignat
Denis Flandre
Valeriya Kilchytska
François Andrieux
Olivier Faynot
Jean-Pierre Raskin
C1
Conferentie
2009
Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX
Tamara Rudenko
Valeriya Kilchytska
Stéphane Burignat
Jean-Pierre Raskin
François Andrieu
Olivier Faynot
A. Nazarov
V.-S. Lysenko
Denis Flandre
C1
Conferentie
2009
Underlap channel UTBB MOSFETs for low-power analog/RF applications
A Kranti
Stéphane Burignat
J-P Raskin
GA Armstrong
P1
Conferentie
2009
2007
Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers
S Duguay
Stéphane Burignat
P Kern
JJ Grob
A Souifi
A Slaoui
A1
Artikel in een tijdschrift
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2007
Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements
Stéphane Burignat
C Plossu
P Boivin
A1
Artikel in een tijdschrift
in
JOURNAL OF NON-CRYSTALLINE SOLIDS
2007
Ultra-fine grain reconfigurability using CNTFETs
I O'Connor
J Liu
D Navarro
I Hassoune
Stéphane Burignat
F Gaffiot
P1
Conferentie
2007
2005
EEPROM retention time extrapolation from floating gate SILC measurements
Stéphane Burignat
Nicolas Baboux
Carole Plossu
Philippe Boivin
C1
Conferentie
2005
Structural properties of Ge-implanted SiO2 layers and related MOS memory effects
S Duguay
A Slaoui
JJ Grob
M Kanoun
Stéphane Burignat
A Souifi
A1
Artikel in een tijdschrift
in
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
2005
2003
Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures
S Croci
C Plossu
Stéphane Burignat
P Boivin
A1
Artikel in een tijdschrift
in
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2003
Quantitative study of charge trapping in SiO2 during bipolar Fowler-Nordheim injection
C Busseret
N Baboux
C Plossu
Stéphane Burignat
P Boivin
A1
Artikel in een tijdschrift
in
JOURNAL OF NON-CRYSTALLINE SOLIDS
2003
Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells
N Baboux
C Busseret
C Plossu
Stéphane Burignat
B Balland
P Boivin
A1
Artikel in een tijdschrift
in
JOURNAL OF NON-CRYSTALLINE SOLIDS
2003