Research Explorer

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Eddy Simoen

67 Resultaten

2021

Frontiers in Low-Frequency Noise Research in Advanced Semiconductor Devices

Eddy SimoenAnabela VelosoBarry O'SullivanKenichiro TakakuraCor Claeys

Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui WangTianhan XuEddy SimoenBogdan GovoreanuCor ClaeysYang Zhang

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

2020

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P.-C. HsuEddy SimoenD. LinA. StesmansL. GouxR. DelhougneP. CarolanH. BenderG. S. Kar

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan CretuBeya NafaaEddy SimoenGeert HellingsDimitri LintenCor Claeys

Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

C. ClaeysP.-C. HsuY. MolsH. HanH. BenderF. SeidelP. CarolanC. MercklingA. AlianN. WaldronG. EnemanN. CollaertM. HeynsEddy Simoen

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Duan XieEddy SimoenHaifeng ChenHiroaki ArimuraNaoto Horiguchi

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue WangPo-Chun HsuMing ZhaoEddy SimoenArturo Sibaja-HernandezJinyan Wang

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Trap identification on n-channel GAA NW FETs

A. BordinB. CretuR. CarinEddy SimoenG. HellingsD. LintenC. Claeys

2019

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P-C HsuEddy SimoenD LinA StesmansL GouxR DelhougneGS Kar

Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

Weihang ZhangEddy SimoenMing ZhaoJincheng Zhang

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Eddy SimoenPo-Chun (Brent) HsuA AlianS El KazziC Wang

A1 Artikel in een tijdschrift in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Device performance as a metrology tool to detect metals in silicon

Cor ClaeysEddy Simoen

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electrical activity of extended defects in III-V semiconductors

Eddy SimoenP-C HsuYves MolsBernardette KunertRobert LangerClement MercklingAliReza AlianNiamh WaldronGeert EnemanNadine CollaertMarc HeynsCor Claeys

Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

Liang HePan ZhaoJiahao LiuYahui SuHua ChenXiaofei JiaHiroaki ArimuraJerome MitardLiesbet WittersNaoto HoriguchiNadine CollaertCor ClaeysEddy Simoen

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong WangMing ZhaoWei LiEddy Simoen

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

C ClaeysR RitzenthalerT SchramH ArimuraN HoriguchiEddy Simoen

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) HsuHan HanEddy SimoenClement MercklingGeert EnemanYves MolsNadine CollaertMarc Heyns

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

PC (Brent) HsuEddy SimoenG EnemanC MercklingA AlianR LangerN CollaertM Heyns

2018

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Po-Chun (Brent) HsuEddy SimoenClement MercklingGeert EnemanYves MolsAliReza AlianRobert LangerNadine CollaertMarc Heyns

A1 Artikel in een tijdschrift in JOURNAL OF APPLIED PHYSICS

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

M AouassaHenk VrielinckEddy Simoen

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Detailed structural and electrical characterization of plated crystalline silicon solar cells

C DangR LabieEddy SimoenJ Poortmans

A1 Artikel in een tijdschrift in SOLAR ENERGY MATERIALS AND SOLAR CELLS

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Eddy SimoenHariharsudan Sivaramakrishnan RadhakrishnanMD Gius UddinIvan GordonJef PoortmansChong WangWei Li

A1 Artikel in een tijdschrift in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Dry passivation process for silicon heterojunction solar cells using hydrogen plasma treatment followed by in situ a-Si:H deposition

Menglei XuChong WangTwan BeardaEddy SimoenHariharsudan Sivaramakrishnan RadhakrishnanIvan GordonWei LiJozef SzlufcikJef Poortmans

A1 Artikel in een tijdschrift in IEEE JOURNAL OF PHOTOVOLTAICS

Electrical properties of extended defects in strain relaxed GeSn

Somya GuptaEddy SimoenRoger LooYosuke ShimuraClement PorretFederica GencarelliKristof ParedisHugo BenderJohan LauwaertHenk VrielinckMarc Heyns

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Electrically active defects in plated crystalline silicon n⁺p solar cells : a DLTS perspective

Eddy SimoenChi DangRiet LabieJef Poortmans

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

S GuptaEddy SimoenR LooQ SmetsAS VerhulstJohan LauwaertHenk VrielinckM Heyns

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors : physical interpretation of transport phenomena

B NafaaB CretuN IsmailO TouayarR CarinEddy SimoenA Veloso

A1 Artikel in een tijdschrift in SOLID-STATE ELECTRONICS

On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications

Sathish kumar DhayalanJiri KujalaJonatan SlotteGeoffrey PourtoisEddy SimoenErik RosseelAndriy HikavyyYosuke ShimuraRoger LooWilfried Vandervorst

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

On the low-frequency noise of high-kappa gate stacks : what did we learn?

Eddy SimoenRomain RitzenthalerTom SchramHiroaki ArimuraNaoto HoriguchiCor Claeys

2017

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Eddy SimoenSuseendran JayachandranAnnelies DelabieMatty CaymaxMarc Heyns

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

Eddy SimoenSK DhayalanA HikavyyR LooE RosseelHenk VrielinckJohan Lauwaert

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Mansour AouassaHenk VrielinckEddy Simoen

Deep level investigation of InGaAs on InP layer

Chong WangEddy SimoenAlian AliRezaSonja SionckeNadine CollaertCor ClaeysWei Li

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors

Chong WangEddy SimoenMing ZhaoWei Li

A1 Artikel in een tijdschrift in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells

Chi DangRiet LabieEddy SimoenLoic TousRichard RussellFilip DuerinckxRobert MertensJef Poortmans

Study of electron traps associated with oxygen superlattices in n‐type silicon

Eddy SimoenSuseendran JayachandranAnnelies DelabieMatty CaymaxMarc Heyns

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

E GaubasT CeponisD DobrovolskasT MalinauskasD MeskauskaiteS MiasojedovasJ MickeviciusJ PavlovV RumbauskasEddy SimoenM Zhao

A1 Artikel in een tijdschrift in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

2016

Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

E GaubasEddy SimoenJan Vanhellemont

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Eddy SimoenS JayachandranA DelabieM CaymaxM Heyns

Deep levels in W-doped Czochralski silicon

Eddy SimoenKoichiro SagaHenk VrielinckJohan Lauwaert

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Deep levels in silicon-oxygen superlattices

Eddy SimoenS JayachandranA DelabieM CaymaxM Heyns

A1 Artikel in een tijdschrift in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Defect engineering for shallow n-type junctions in germanium : facts and fiction

Eddy SimoenMarc SchaekersJinbiao LiuJun LuoChao ZhaoKathy BarlaNadine Collaert

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn

Somya GuptaEddy SimoenRoger LooOreste MadiaDennis LinClement MercklingYosuke ShimuraThierry ConardJohan LauwaertHenk VrielinckMarc Heyns

A1 Artikel in een tijdschrift in ACS APPLIED MATERIALS & INTERFACES

Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors

Eddy SimoenValentina FerroBarry O'Sullivan

Jan Vanhellemont : 35 years of materials research in microelectronics

Gudrun KissingerEddy SimoenCor ClaeysPaul ClauwsPiotr ŚpiewakKoji SueokaDeren Yang

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Eddy SimoenBogdan CretuWen FangMarc AoulaicheJean-Marc RoutoureRegis CarinJun LuoChao ZhaoCor Claeys

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Akira UedonoMing ZhaoEddy Simoen

A1 Artikel in een tijdschrift in JOURNAL OF APPLIED PHYSICS

Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Suseendran JayachandranEddy SimoenKoen MartensJohan MeersschautHugo BenderMatty CaymaxWilfried VandervorstMarc HeynsAnnelies Delabie

A1 Artikel in een tijdschrift in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Study of electrically active defects in epitaxial layers on silicon

Eddy SimoenSK DhayalanS JayachandranS GuptaF GencarelliA HikavyyR LooE RosseelA DelabieM CaymaxR LangerK BarlaHenk VrielinckJohan Lauwaert

Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy

Eddy SimoenSathish Kumar DhayalanAndriy Yakovitch HikavyyRoger LooErik RosseelHenk VrielinckJohan Lauwaert

2015

Analytical techniques for electrically active defect detection

Eddy SimoenJohan LauwaertHenk Vrielinck

A1 Artikel in een tijdschrift in Semiconductors and Semimetals

Distinction between silicon and oxide traps using single-trap spectroscopy

Wen FangEddy SimoenMarc AoulaicheJun LuoChao ZhaoCor Claeys

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electronic properties of manganese impurities in germanium

Johan LauwaertSiegfried SegersFilip MoensKarl OpsomerPaul ClauwsFreddy CallensEddy SimoenHenk Vrielinck

A1 Artikel in een tijdschrift in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Random telegraph noise: the key to single defect studies in nano-devices

Eddy SimoenW FangM AoulaicheJ LuoC ZhaoC Claeys

A1 Artikel in een tijdschrift in THIN SOLID FILMS

Random telegraph noise: the key to single defect studies in nano-devices

Eddy SimoenW FangJ LuoC ZhaoC Claeys

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich BühlerGeert EnemanPaola FaviaLiesbeth Johanna WittersBenjamin VincentAndriy HikavyyRoger LooHugo BenderNadine CollaertEddy SimoenJoão Antonio MartinoCor Claeys

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

Eddy SimoenBogdan CretuWen FangMarc AoulaicheJean-Marc RoutoureRegis CarinSara dos SantosJun LuoChao ZhaoJoao Antonio MartinoCor Claeys

2014

Deep levels in W-doped Czochralski silicon

Eddy SimoenKoichiro SagaJohan LauwaertHenk Vrielinck

Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications

Eddy SimoenV FerroBJ O'Sullivan

A1 Artikel in een tijdschrift in JOURNAL OF APPLIED PHYSICS

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

Adrian ChasinEddy SimoenAjay BhoolokamManoj NagJan GenoeGeorges GielenPaul Heremans

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Deep-level transient spectroscopy study of quenched-in defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Defect assessment and leakage control in Ge junctions

Mireia Bargallo-GonzalezEddy SimoenGeert EnemanB De JaegerG WangR LooCor Claeys

A1 Artikel in een tijdschrift in MICROELECTRONIC ENGINEERING

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Artikel in een tijdschrift in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Mn related defect levels in germanium

Johan LauwaertFilip MoensSiegfried SegersKarl OpsomerEddy SimoenJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

Jonatan SlotteFilip TuomistoJiri KujalaAndreas M HolmNatalie SegercranzSimo KilpeläinenKatja KuitinenEddy SimoenFederica GencarelliR LooYosuke Shimura

2012

On the diffusion and activation of n-type dopants in Ge

Jan VanhellemontEddy Simoen

A1 Artikel in een tijdschrift in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

2007

Defect analysis in semiconductor materials based on p-n junction diode characteristics

Eddy SimoenCor ClaeysJan Vanhellemont

Hoofdstuk in een boek in Defects and diffusion semiconductors : an annual retrospective IX