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Onderzoeker
Eddy Simoen
Profiel
Projecten
Publicaties
Activiteiten
Prijzen & Erkenningen
82
Resultaten
2023
3D backside integration of FinFETs : is there an impact on LF noise?
Eddy Simoen
Anne Jourdain
Cor Claeys
Anabela Veloso
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2023
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
Eddy Simoen
Anabela Veloso
Philippe Matagne
Cor Claeys
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2023
Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs
Bogdan Cretu
Anabela Veloso
Eddy Simoen
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2023
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
Hongyue Wang
Eddy Simoen
Lei Ge
Yuebo Liu
Chang Liu
Mingsheng Xu
Yijun Shi
Zongqi Cai
Yan Peng
Xiwei Wang
et al.
A1
Artikel in een tijdschrift
in
DIAMOND AND RELATED MATERIALS
2023
2022
Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers
P.-C. (Brent) Hsu
Eddy Simoen
Geert Eneman
Clement Merckling
Yves Mols
Marc Heyns
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2022
NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs
Duan Xie
Eddy Simoen
Hiroaki Arimura
Elena Capogreco
Jerome Mitard
Naoto Horiguchi
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2022
Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications
Eddy Simoen
Carlos H.S. Coelho
Vanessa C.P. da Silva
João A. Martino
Paula Ghedini Der Agopian
Alberto Oliveira
Bogdan Cretu
Anabela Veloso
A2
Artikel in een tijdschrift
in
JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS
2022
The low-frequency noise behavior of advanced logic and memory devices
Eddy Simoen
Romain Ritzenthaler
Hans Mertens
Eugenio Dentoni Litta
Naoto Horiguchi
Adrian Vaisman
Nouredine Rassoul
Gouri Sankar Kar
Cor Claeys
C1
Conferentie
2022
Tunnel-FET evolution and applications for analog circuits
Paula Ghedini Der Agopian
Joao A. Martino
Eddy Simoen
Rita Rooyackers
Cor Claeys
A2
Artikel in een tijdschrift
in
JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS
2022
2021
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
A. Vais
B. Hsu
O. Syshchyk
H. Yu
A. Alian
Y. Mols
V Kodandarama, K.
B. Kunert
N. Waldron
Eddy Simoen
et al.
P1
Conferentie
2021
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Hongyue Wang
Po-Chun (Brent) Hsu
Ming Zhao
Eddy Simoen
Stefan De Gendt
Arturo Sibaja-Hernandez
Jinyan Wang
A1
Artikel in een tijdschrift
in
JOURNAL OF APPLIED PHYSICS
2021
Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
Po-Chun Hsu
Eddy Simoen
Hu Liang
Brice De Jaeger
Benoit Bakeroot
Dirk Wellekens
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2021
Frontiers in low-frequency noise research in advanced semiconductor devices
Eddy Simoen
Anabela Veloso
Barry O'Sullivan
Kenichiro Takakura
Cor Claeys
C1
Conferentie
2021
Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks
Danghui Wang
Tianhan Xu
Eddy Simoen
Bogdan Govoreanu
Cor Claeys
Yang Zhang
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021
Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets
Bogdan Cretu
Anabela Veloso
Eddy Simoen
P1
Conferentie
2021
2020
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
P.-C. Hsu
Eddy Simoen
D. Lin
A. Stesmans
L. Goux
R. Delhougne
P. Carolan
H. Bender
G. S. Kar
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2020
Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities
Bogdan Cretu
Beya Nafaa
Eddy Simoen
Geert Hellings
Dimitri Linten
Cor Claeys
C1
Conferentie
2020
Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers
C. Claeys
P.-C. Hsu
Y. Mols
H. Han
H. Bender
F. Seidel
P. Carolan
C. Merckling
A. Alian
N. Waldron
et al.
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2020
Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
Duan Xie
Eddy Simoen
Haifeng Chen
Hiroaki Arimura
Naoto Horiguchi
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
Hongyue Wang
Po-Chun Hsu
Ming Zhao
Eddy Simoen
Arturo Sibaja-Hernandez
Jinyan Wang
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020
Trap identification on n-channel GAA NW FETs
A. Bordin
B. Cretu
R. Carin
Eddy Simoen
G. Hellings
D. Linten
C. Claeys
C1
Conferentie
2020
2019
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
P-C Hsu
Eddy Simoen
D Lin
A Stesmans
L Goux
R Delhougne
GS Kar
C1
Conferentie
2019
Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
Weihang Zhang
Eddy Simoen
Ming Zhao
Jincheng Zhang
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
Eddy Simoen
Po-Chun (Brent) Hsu
A Alian
S El Kazzi
C Wang
A1
Artikel in een tijdschrift
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2019
Device performance as a metrology tool to detect metals in silicon
Cor Claeys
Eddy Simoen
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2019
Electrical activity of extended defects in III-V semiconductors
Eddy Simoen
P-C Hsu
Yves Mols
Bernardette Kunert
Robert Langer
Clement Merckling
AliReza Alian
Niamh Waldron
Geert Eneman
Nadine Collaert
et al.
C1
Conferentie
2019
Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
Liang He
Pan Zhao
Jiahao Liu
Yahui Su
Hua Chen
Xiaofei Jia
Hiroaki Arimura
Jerome Mitard
Liesbet Witters
Naoto Horiguchi
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors
Chong Wang
Ming Zhao
Wei Li
Eddy Simoen
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2019
Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks
C Claeys
R Ritzenthaler
T Schram
H Arimura
N Horiguchi
Eddy Simoen
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2019
Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging
Po-Chun (Brent) Hsu
Han Han
Eddy Simoen
Clement Merckling
Geert Eneman
Yves Mols
Nadine Collaert
Marc Heyns
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2019
Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction
PC (Brent) Hsu
Eddy Simoen
G Eneman
C Merckling
A Alian
R Langer
N Collaert
M Heyns
P1
Conferentie
2019
2018
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Po-Chun (Brent) Hsu
Eddy Simoen
Clement Merckling
Geert Eneman
Yves Mols
AliReza Alian
Robert Langer
Nadine Collaert
Marc Heyns
A1
Artikel in een tijdschrift
in
JOURNAL OF APPLIED PHYSICS
2018
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
M Aouassa
Henk Vrielinck
Eddy Simoen
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2018
Detailed structural and electrical characterization of plated crystalline silicon solar cells
C Dang
R Labie
Eddy Simoen
J Poortmans
A1
Artikel in een tijdschrift
in
SOLAR ENERGY MATERIALS AND SOLAR CELLS
2018
Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime
Eddy Simoen
Hariharsudan Sivaramakrishnan Radhakrishnan
MD Gius Uddin
Ivan Gordon
Jef Poortmans
Chong Wang
Wei Li
A1
Artikel in een tijdschrift
in
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2018
Dry passivation process for silicon heterojunction solar cells using hydrogen plasma treatment followed by in situ a-Si:H deposition
Menglei Xu
Chong Wang
Twan Bearda
Eddy Simoen
Hariharsudan Sivaramakrishnan Radhakrishnan
Ivan Gordon
Wei Li
Jozef Szlufcik
Jef Poortmans
A1
Artikel in een tijdschrift
in
IEEE JOURNAL OF PHOTOVOLTAICS
2018
Electrical properties of extended defects in strain relaxed GeSn
Somya Gupta
Eddy Simoen
Roger Loo
Yosuke Shimura
Clement Porret
Federica Gencarelli
Kristof Paredis
Hugo Bender
Johan Lauwaert
Henk Vrielinck
et al.
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2018
Electrically active defects in plated crystalline silicon n⁺p solar cells : a DLTS perspective
Eddy Simoen
Chi Dang
Riet Labie
Jef Poortmans
P1
Conferentie
2018
Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
S Gupta
Eddy Simoen
R Loo
Q Smets
AS Verhulst
Johan Lauwaert
Henk Vrielinck
M Heyns
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2018
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors : physical interpretation of transport phenomena
B Nafaa
B Cretu
N Ismail
O Touayar
R Carin
Eddy Simoen
A Veloso
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2018
On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications
Sathish kumar Dhayalan
Jiri Kujala
Jonatan Slotte
Geoffrey Pourtois
Eddy Simoen
Erik Rosseel
Andriy Hikavyy
Yosuke Shimura
Roger Loo
Wilfried Vandervorst
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2018
On the low-frequency noise of high-kappa gate stacks : what did we learn?
Eddy Simoen
Romain Ritzenthaler
Tom Schram
Hiroaki Arimura
Naoto Horiguchi
Cor Claeys
P1
Conferentie
2018
2017
A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice
Eddy Simoen
Suseendran Jayachandran
Annelies Delabie
Matty Caymax
Marc Heyns
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
2017
Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy
Eddy Simoen
SK Dhayalan
A Hikavyy
R Loo
E Rosseel
Henk Vrielinck
Johan Lauwaert
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2017
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
Mansour Aouassa
Henk Vrielinck
Eddy Simoen
P1
Conferentie
2017
Deep level investigation of InGaAs on InP layer
Chong Wang
Eddy Simoen
Alian AliReza
Sonja Sioncke
Nadine Collaert
Cor Claeys
Wei Li
P1
Conferentie
2017
Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors
Chong Wang
Eddy Simoen
Ming Zhao
Wei Li
A1
Artikel in een tijdschrift
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2017
Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells
Chi Dang
Riet Labie
Eddy Simoen
Loic Tous
Richard Russell
Filip Duerinckx
Robert Mertens
Jef Poortmans
P1
Conferentie
2017
Study of electron traps associated with oxygen superlattices in n‐type silicon
Eddy Simoen
Suseendran Jayachandran
Annelies Delabie
Matty Caymax
Marc Heyns
C1
Conferentie
2017
Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
E Gaubas
T Ceponis
D Dobrovolskas
T Malinauskas
D Meskauskaite
S Miasojedovas
J Mickevicius
J Pavlov
V Rumbauskas
Eddy Simoen
et al.
A1
Artikel in een tijdschrift
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2017
2016
Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
E Gaubas
Eddy Simoen
Jan Vanhellemont
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2016
Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon
Eddy Simoen
S Jayachandran
A Delabie
M Caymax
M Heyns
P1
Conferentie
2016
Deep levels in W-doped Czochralski silicon
Eddy Simoen
Koichiro Saga
Henk Vrielinck
Johan Lauwaert
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2016
Deep levels in silicon-oxygen superlattices
Eddy Simoen
S Jayachandran
A Delabie
M Caymax
M Heyns
A1
Artikel in een tijdschrift
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2016
Defect engineering for shallow n-type junctions in germanium : facts and fiction
Eddy Simoen
Marc Schaekers
Jinbiao Liu
Jun Luo
Chao Zhao
Kathy Barla
Nadine Collaert
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2016
Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn
Somya Gupta
Eddy Simoen
Roger Loo
Oreste Madia
Dennis Lin
Clement Merckling
Yosuke Shimura
Thierry Conard
Johan Lauwaert
Henk Vrielinck
et al.
A1
Artikel in een tijdschrift
in
ACS APPLIED MATERIALS & INTERFACES
2016
Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors
Eddy Simoen
Valentina Ferro
Barry O'Sullivan
C1
Conferentie
2016
Jan Vanhellemont : 35 years of materials research in microelectronics
Gudrun Kissinger
Eddy Simoen
Cor Claeys
Paul Clauws
Piotr Śpiewak
Koji Sueoka
Deren Yang
Biografie
2016
Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
Eddy Simoen
Bogdan Cretu
Wen Fang
Marc Aoulaiche
Jean-Marc Routoure
Regis Carin
Jun Luo
Chao Zhao
Cor Claeys
C1
Conferentie
2016
Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam
Akira Uedono
Ming Zhao
Eddy Simoen
A1
Artikel in een tijdschrift
in
JOURNAL OF APPLIED PHYSICS
2016
Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties
Suseendran Jayachandran
Eddy Simoen
Koen Martens
Johan Meersschaut
Hugo Bender
Matty Caymax
Wilfried Vandervorst
Marc Heyns
Annelies Delabie
A1
Artikel in een tijdschrift
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2016
Study of electrically active defects in epitaxial layers on silicon
Eddy Simoen
SK Dhayalan
S Jayachandran
S Gupta
F Gencarelli
A Hikavyy
R Loo
E Rosseel
A Delabie
M Caymax
et al.
P1
Conferentie
2016
Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy
Eddy Simoen
Sathish Kumar Dhayalan
Andriy Yakovitch Hikavyy
Roger Loo
Erik Rosseel
Henk Vrielinck
Johan Lauwaert
C1
Conferentie
2016
2015
Analytical techniques for electrically active defect detection
Eddy Simoen
Johan Lauwaert
Henk Vrielinck
A1
Artikel in een tijdschrift
in
Semiconductors and Semimetals
2015
Distinction between silicon and oxide traps using single-trap spectroscopy
Wen Fang
Eddy Simoen
Marc Aoulaiche
Jun Luo
Chao Zhao
Cor Claeys
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2015
Electronic properties of manganese impurities in germanium
Johan Lauwaert
Siegfried Segers
Filip Moens
Karl Opsomer
Paul Clauws
Freddy Callens
Eddy Simoen
Henk Vrielinck
A1
Artikel in een tijdschrift
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
2015
Impact of the gate material on the deep levels in a-Si:H/c-Si metal-insulator-semiconductor capacitors
Eddy Simoen
Valentina Ferro
Barry O’Sullivan
C1
Conferentie
2015
Low frequency noise spectroscopy of bulk and border traps in nanoscale devices
Eddy Simoen
Bogdan Cretu
Wen Fang
Marc Aoulaiche
Jean-Marc Routoure
Regis Carin
Jun Luo
Chao Zhao
Cor Claeys
C1
Conferentie
2015
Random telegraph noise: the key to single defect studies in nano-devices
Eddy Simoen
W Fang
J Luo
C Zhao
C Claeys
C3
Conferentie
2015
Random telegraph noise: the key to single defect studies in nano-devices
Eddy Simoen
W Fang
M Aoulaiche
J Luo
C Zhao
C Claeys
A1
Artikel in een tijdschrift
in
THIN SOLID FILMS
2015
TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
Rudolf Theoderich Bühler
Geert Eneman
Paola Favia
Liesbeth Johanna Witters
Benjamin Vincent
Andriy Hikavyy
Roger Loo
Hugo Bender
Nadine Collaert
Eddy Simoen
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2015
Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
Eddy Simoen
Bogdan Cretu
Wen Fang
Marc Aoulaiche
Jean-Marc Routoure
Regis Carin
Sara dos Santos
Jun Luo
Chao Zhao
Joao Antonio Martino
et al.
P1
Conferentie
2015
2014
Deep levels in W-doped Czochralski silicon
Eddy Simoen
Koichiro Saga
Johan Lauwaert
Henk Vrielinck
C1
Conferentie
2014
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
Eddy Simoen
V Ferro
BJ O'Sullivan
A1
Artikel in een tijdschrift
in
JOURNAL OF APPLIED PHYSICS
2014
Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
Adrian Chasin
Eddy Simoen
Ajay Bhoolokam
Manoj Nag
Jan Genoe
Georges Gielen
Paul Heremans
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2014
Deep-level transient spectroscopy study of quenched-in defects in germanium
Siegfried Segers
Johan Lauwaert
Paul Clauws
Freddy Callens
Jan Vanhellemont
Eddy Simoen
Henk Vrielinck
C3
Conferentie
2014
Defect assessment and leakage control in Ge junctions
Mireia Bargallo-Gonzalez
Eddy Simoen
Geert Eneman
B De Jaeger
G Wang
R Loo
Cor Claeys
A1
Artikel in een tijdschrift
in
MICROELECTRONIC ENGINEERING
2014
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge
Siegfried Segers
Johan Lauwaert
Paul Clauws
Eddy Simoen
Jan Vanhellemont
Freddy Callens
Henk Vrielinck
A1
Artikel in een tijdschrift
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2014
Mn related defect levels in germanium
Johan Lauwaert
Filip Moens
Siegfried Segers
Karl Opsomer
Eddy Simoen
Jan Vanhellemont
Paul Clauws
Freddy Callens
Henk Vrielinck
C3
Conferentie
2014
Positron annihilation spectroscopy on open-volume defects in group IV semiconductors
Jonatan Slotte
Filip Tuomisto
Jiri Kujala
Andreas M Holm
Natalie Segercranz
Simo Kilpeläinen
Katja Kuitinen
Eddy Simoen
Federica Gencarelli
R Loo
et al.
C1
Conferentie
2014
2012
On the diffusion and activation of n-type dopants in Ge
Jan Vanhellemont
Eddy Simoen
A1
Artikel in een tijdschrift
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2012
2007
Defect analysis in semiconductor materials based on p-n junction diode characteristics
Eddy Simoen
Cor Claeys
Jan Vanhellemont
Hoofdstuk in een boek
in
Defects and diffusion semiconductors : an annual retrospective IX
2007