Research Explorer

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Researcher

Eddy Simoen

Publications & Research Data

Awards & Distinctions

116 Results

2026

Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Abderrahim TahiatBogdan CretuAnabela VelosoEddy Simoen

A1 Journal Article in SOLID-STATE ELECTRONICS

2025

Exploration and insights into vertical nanowire/sheet FETs for ultimate scaled circuits/systems

Anabela VelosoBjorn VermeerschAbderrahim TahiatPhilippe MatagneAdrian ChasinBarry O'SullivanRuben AsanovskiBogdan CretuEddy SimoenRoger Loo et al.

Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

A. TahiatB. CretuA. VelosoEddy Simoen

A1 Journal Article in SOLID-STATE ELECTRONICS

Novel Y-function methodology parameter estimation from weak to strong inversion operation

A. TahiatB. CretuA. VelosoEddy Simoen

A1 Journal Article in SOLID-STATE ELECTRONICS

2024

DLTS assessment of grown-in defects in hetero-epitaxial gate stacks for stacked silicon nanosheet channels

Eddy SimoenSamira KhelifiHenk VrielinckA. AkulaRoger Loo

Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Bogdan CretuAbderrahim TahiatAnabela VelosoEddy Simoen

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

2023

3D backside integration of FinFETs : is there an impact on LF noise?

Eddy SimoenAnne JourdainCor ClaeysAnabela Veloso

A1 Journal Article in SOLID-STATE ELECTRONICS

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Eddy SimoenAnabela VelosoPhilippe MatagneCor Claeys

A1 Journal Article in SOLID-STATE ELECTRONICS

Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

A. TahiatB. CretuA. VelosoEddy Simoen

A1 Journal Article in SOLID-STATE ELECTRONICS

Lateral PIN photodiode with germanium and silicon layer on SOI wafers

Fábio A. SilvaRodrigo T. DoriaEddy SimoenM. G. C. Andrade

A2 Journal Article in JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS

Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs

Bogdan CretuAnabela VelosoEddy Simoen

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Hongyue WangEddy SimoenLei GeYuebo LiuChang LiuMingsheng XuYijun ShiZongqi CaiYan PengXiwei Wang et al.

A1 Journal Article in DIAMOND AND RELATED MATERIALS

2022

Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers

P.-C. (Brent) HsuEddy SimoenGeert EnemanClement MercklingYves MolsMarc Heyns

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs

Duan XieEddy SimoenHiroaki ArimuraElena CapogrecoJerome MitardNaoto Horiguchi

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications

Eddy SimoenCarlos H.S. CoelhoVanessa C.P. da SilvaJoão A. MartinoPaula Ghedini Der AgopianAlberto OliveiraBogdan CretuAnabela Veloso

A2 Journal Article in JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS

The low-frequency noise behavior of advanced logic and memory devices

Eddy SimoenRomain RitzenthalerHans MertensEugenio Dentoni LittaNaoto HoriguchiAdrian VaismanNouredine RassoulGouri Sankar KarCor Claeys

Tunnel-FET evolution and applications for analog circuits

Paula Ghedini Der AgopianJoao A. MartinoEddy SimoenRita RooyackersCor Claeys

A2 Journal Article in JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS

2021

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

A. VaisB. HsuO. SyshchykH. YuA. AlianY. MolsV Kodandarama, K.B. KunertN. WaldronEddy Simoen et al.

Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy

Hongyue WangPo-Chun (Brent) HsuMing ZhaoEddy SimoenStefan De GendtArturo Sibaja-HernandezJinyan Wang

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun HsuEddy SimoenHu LiangBrice De JaegerBenoit BakerootDirk WellekensStefaan Decoutere

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Frontiers in low-frequency noise research in advanced semiconductor devices

Eddy SimoenAnabela VelosoBarry O'SullivanKenichiro TakakuraCor Claeys

Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui WangTianhan XuEddy SimoenBogdan GovoreanuCor ClaeysYang Zhang

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets

Bogdan CretuAnabela VelosoEddy Simoen

2020

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P.-C. HsuEddy SimoenD. LinA. StesmansL. GouxR. DelhougneP. CarolanH. BenderG. S. Kar

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan CretuBeya NafaaEddy SimoenGeert HellingsDimitri LintenCor Claeys

Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

C. ClaeysP.-C. HsuY. MolsH. HanH. BenderF. SeidelP. CarolanC. MercklingA. AlianN. Waldron et al.

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Duan XieEddy SimoenHaifeng ChenHiroaki ArimuraNaoto Horiguchi

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue WangPo-Chun HsuMing ZhaoEddy SimoenArturo Sibaja-HernandezJinyan Wang

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Trap identification on n-channel GAA NW FETs

A. BordinB. CretuR. CarinEddy SimoenG. HellingsD. LintenC. Claeys

2019

A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P-C HsuEddy SimoenD LinA StesmansL GouxR DelhougneGS Kar

Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates

Weihang ZhangEddy SimoenMing ZhaoJincheng Zhang

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Eddy SimoenPo-Chun (Brent) HsuA AlianS El KazziC Wang

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Device performance as a metrology tool to detect metals in silicon

Cor ClaeysEddy Simoen

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electrical activity of extended defects in III-V semiconductors

Eddy SimoenP-C HsuYves MolsBernardette KunertRobert LangerClement MercklingAliReza AlianNiamh WaldronGeert EnemanNadine Collaert et al.

Electron traps at sidewalls of vertical n(+)-GaAs/n(-)-InGaP/p(+)-GaAs diodes detected with deep-level transient spectroscopy

Hao YuPo-Chun (Brent) HsuAbhitosh VaisEddy SimoenNiamh WaldronNadine Collaert

Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior

Liang HePan ZhaoJiahao LiuYahui SuHua ChenXiaofei JiaHiroaki ArimuraJerome MitardLiesbet WittersNaoto Horiguchi et al.

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong WangMing ZhaoWei LiEddy Simoen

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks

C ClaeysR RitzenthalerT SchramH ArimuraN HoriguchiEddy Simoen

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) HsuHan HanEddy SimoenClement MercklingGeert EnemanYves MolsNadine CollaertMarc Heyns

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

PC (Brent) HsuEddy SimoenG EnemanC MercklingA AlianR LangerN CollaertM Heyns

2018

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

Po-Chun (Brent) HsuEddy SimoenClement MercklingGeert EnemanYves MolsAliReza AlianRobert LangerNadine CollaertMarc Heyns

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

M AouassaHenk VrielinckEddy Simoen

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Detailed structural and electrical characterization of plated crystalline silicon solar cells

C DangR LabieEddy SimoenJ Poortmans

A1 Journal Article in SOLAR ENERGY MATERIALS AND SOLAR CELLS

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Eddy SimoenHariharsudan Sivaramakrishnan RadhakrishnanMD Gius UddinIvan GordonJef PoortmansChong WangWei Li

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Dry passivation process for silicon heterojunction solar cells using hydrogen plasma treatment followed by in situ a-Si:H deposition

Menglei XuChong WangTwan BeardaEddy SimoenHariharsudan Sivaramakrishnan RadhakrishnanIvan GordonWei LiJozef SzlufcikJef Poortmans

A1 Journal Article in IEEE JOURNAL OF PHOTOVOLTAICS

Electrical properties of extended defects in strain relaxed GeSn

Somya GuptaEddy SimoenRoger LooYosuke ShimuraClement PorretFederica GencarelliKristof ParedisHugo BenderJohan LauwaertHenk Vrielinck et al.

A1 Journal Article in APPLIED PHYSICS LETTERS

Electrically active defects in plated crystalline silicon n⁺p solar cells : a DLTS perspective

Eddy SimoenChi DangRiet LabieJef Poortmans

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

S GuptaEddy SimoenR LooQ SmetsAS VerhulstJohan LauwaertHenk VrielinckM Heyns

A1 Journal Article in APPLIED PHYSICS LETTERS

Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors : physical interpretation of transport phenomena

B NafaaB CretuN IsmailO TouayarR CarinEddy SimoenA Veloso

A1 Journal Article in SOLID-STATE ELECTRONICS

On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications

Sathish kumar DhayalanJiri KujalaJonatan SlotteGeoffrey PourtoisEddy SimoenErik RosseelAndriy HikavyyYosuke ShimuraRoger LooWilfried Vandervorst

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

On the low-frequency noise of high-kappa gate stacks : what did we learn?

Eddy SimoenRomain RitzenthalerTom SchramHiroaki ArimuraNaoto HoriguchiCor Claeys

2017

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Eddy SimoenSuseendran JayachandranAnnelies DelabieMatty CaymaxMarc Heyns

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

Eddy SimoenSK DhayalanA HikavyyR LooE RosseelHenk VrielinckJohan Lauwaert

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots

Mansour AouassaHenk VrielinckEddy Simoen

Deep level investigation of InGaAs on InP layer

Chong WangEddy SimoenAlian AliRezaSonja SionckeNadine CollaertCor ClaeysWei Li

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors

Chong WangEddy SimoenMing ZhaoWei Li

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells

Chi DangRiet LabieEddy SimoenLoic TousRichard RussellFilip DuerinckxRobert MertensJef Poortmans

Study of electron traps associated with oxygen superlattices in n‐type silicon

Eddy SimoenSuseendran JayachandranAnnelies DelabieMatty CaymaxMarc Heyns

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

E GaubasT CeponisD DobrovolskasT MalinauskasD MeskauskaiteS MiasojedovasJ MickeviciusJ PavlovV RumbauskasEddy Simoen et al.

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

2016

Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

E GaubasEddy SimoenJan Vanhellemont

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon

Eddy SimoenS JayachandranA DelabieM CaymaxM Heyns

Deep levels in silicon-oxygen superlattices

Eddy SimoenS JayachandranA DelabieM CaymaxM Heyns

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Deep levels in W-doped Czochralski silicon

Eddy SimoenKoichiro SagaHenk VrielinckJohan Lauwaert

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Defect engineering for shallow n-type junctions in germanium : facts and fiction

Eddy SimoenMarc SchaekersJinbiao LiuJun LuoChao ZhaoKathy BarlaNadine Collaert

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn

Somya GuptaEddy SimoenRoger LooOreste MadiaDennis LinClement MercklingYosuke ShimuraThierry ConardJohan LauwaertHenk Vrielinck et al.

A1 Journal Article in ACS APPLIED MATERIALS & INTERFACES

Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors

Eddy SimoenValentina FerroBarry O'Sullivan

Jan Vanhellemont : 35 years of materials research in microelectronics

Gudrun KissingerEddy SimoenCor ClaeysPaul ClauwsPiotr ŚpiewakKoji SueokaDeren Yang

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Eddy SimoenBogdan CretuWen FangMarc AoulaicheJean-Marc RoutoureRegis CarinJun LuoChao ZhaoCor Claeys

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Akira UedonoMing ZhaoEddy Simoen

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties

Suseendran JayachandranEddy SimoenKoen MartensJohan MeersschautHugo BenderMatty CaymaxWilfried VandervorstMarc HeynsAnnelies Delabie

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Study of electrically active defects in epitaxial layers on silicon

Eddy SimoenSK DhayalanS JayachandranS GuptaF GencarelliA HikavyyR LooE RosseelA DelabieM Caymax et al.

Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy

Eddy SimoenSathish Kumar DhayalanAndriy Yakovitch HikavyyRoger LooErik RosseelHenk VrielinckJohan Lauwaert

2015

Analytical techniques for electrically active defect detection

Eddy SimoenJohan LauwaertHenk Vrielinck

A1 Journal Article in Semiconductors and Semimetals

Distinction between silicon and oxide traps using single-trap spectroscopy

Wen FangEddy SimoenMarc AoulaicheJun LuoChao ZhaoCor Claeys

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electronic properties of manganese impurities in germanium

Johan LauwaertSiegfried SegersFilip MoensKarl OpsomerPaul ClauwsFreddy CallensEddy SimoenHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Impact of the gate material on the deep levels in a-Si:H/c-Si metal-insulator-semiconductor capacitors

Eddy SimoenValentina FerroBarry O’Sullivan

Low frequency noise spectroscopy of bulk and border traps in nanoscale devices

Eddy SimoenBogdan CretuWen FangMarc AoulaicheJean-Marc RoutoureRegis CarinJun LuoChao ZhaoCor Claeys

Random telegraph noise: the key to single defect studies in nano-devices

Eddy SimoenW FangM AoulaicheJ LuoC ZhaoC Claeys

A1 Journal Article in THIN SOLID FILMS

Random telegraph noise: the key to single defect studies in nano-devices

Eddy SimoenW FangJ LuoC ZhaoC Claeys

TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Rudolf Theoderich BühlerGeert EnemanPaola FaviaLiesbeth Johanna WittersBenjamin VincentAndriy HikavyyRoger LooHugo BenderNadine CollaertEddy Simoen et al.

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs

Eddy SimoenBogdan CretuWen FangMarc AoulaicheJean-Marc RoutoureRegis CarinSara dos SantosJun LuoChao ZhaoJoao Antonio Martino et al.

2014

Deep levels in W-doped Czochralski silicon

Eddy SimoenKoichiro SagaJohan LauwaertHenk Vrielinck

Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications

Eddy SimoenV FerroBJ O'Sullivan

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

Adrian ChasinEddy SimoenAjay BhoolokamManoj NagJan GenoeGeorges GielenPaul Heremans

A1 Journal Article in APPLIED PHYSICS LETTERS

Deep-level transient spectroscopy study of quenched-in defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Defect assessment and leakage control in Ge junctions

Mireia Bargallo-GonzalezEddy SimoenGeert EnemanB De JaegerG WangR LooCor Claeys

A1 Journal Article in MICROELECTRONIC ENGINEERING

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Mn related defect levels in germanium

Johan LauwaertFilip MoensSiegfried SegersKarl OpsomerEddy SimoenJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

Jonatan SlotteFilip TuomistoJiri KujalaAndreas M HolmNatalie SegercranzSimo KilpeläinenKatja KuitinenEddy SimoenFederica GencarelliR Loo et al.

2012

On the diffusion and activation of n-type dopants in Ge

Jan VanhellemontEddy Simoen

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

2007

Defect analysis in semiconductor materials based on p-n junction diode characteristics

Eddy SimoenCor ClaeysJan Vanhellemont

Bookchapter in Defects and diffusion semiconductors : an annual retrospective IX

2003

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De GryseJan VanhellemontPaul ClauwsO LebedevJ Van LanduytEddy SimoenC Claeys

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2002

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

Eddy SimoenC ClaeysV PriviteraS CoffaM KokkorisE KossionidesG FanourakisAN LarsenPaul Clauws

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

Eddy SimoenC ClaeysR JobAG UlyashinWR FahrnerOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

Eddy SimoenR LooC ClaeysOlivier De GrysePaul ClauwsJ Van LanduytO Lebedev

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

Eddy SimoenC ClaeysR JobAG UlyashinWR FahrnerG TonelliOlivier De GrysePaul Clauws

2001

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

Olivier De GrysePaul ClauwsO LebedevJ Van LanduytJ VanhellemontC ClaeysEddy Simoen

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Defect analysis of n-type silicon strained layers

Eddy SimoenR LooP RousselM CaymaxH BenderC ClaeysHJ HerzogAnja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

High energy proton radiation induced defects in tin-doped n-type silicon

Eddy SimoenC ClaeysV PriviteraS CoffaA LarsenPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Tin doping of silicon for controlling oxygen precipitation and radiation hardness

C ClaeysEddy SimoenVB NeimashA KraitchinskiiM Kras’koO PuzenkoAnja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2000

Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon

Eddy SimoenC ClaeysVB NeimashA KraitchinskiiN KraskoO PuzenkoAnja BlondeelPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

1992

Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

Eddy SimoenK De BackkerC ClaeysPaul Clauws

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

DLTS of nickel impurities in germanium

Guy HuylebroeckPaul ClauwsEddy SimoenJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes

MA TrauwaertJan VanhellemontEddy SimoenC ClaeysB JohlanderL AdamsPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

1991

Calculation of FeB pairing in p-Si at room temperature for low B-concentrations

Els RotsaertPaul ClauwsEddy SimoenJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

DLTS of high-resistivity Si

Eddy SimoenCor ClaeysGuy HuylebroeckPaul Clauws

1989

DLTS of silver in germanium : evidence for an amphoteric impurity

Guy HuylebroeckPaul ClauwsEddy SimoenEls RotsaertJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DLTS of the third acceptor level of substitutional copper in germanium

Paul ClauwsGuy HuylebroeckEddy SimoenPeter VermaerckeF. De SmetJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1987

DLTS of gold impurities in germanium

Eddy SimoenPaul ClauwsGuy HuylebroeckJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1986

Correlation between deep-level parameters and energy resolution of p-type high purity Ge γ-detectors

Eddy SimoenPaul ClauwsGuy HuylebroeckJoost VennikL. Van GoethemM. Van SandeL. De LaetH.J. Guislain

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Signature and capture cross section of copper-related hole traps in p-type high-purity germanium

Eddy SimoenPaul ClauwsMarcel LamonJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1985

DLTS of grown-in dislocations in p- and n-type high-purity germanium

Eddy SimoenPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium

Eddy SimoenPaul ClauwsJoost Vennik

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1983

New methods for the characterization of electrically active defects in semiconductors : PTIS and DLTS

Paul ClauwsJan BroeckxEddy SimoenM. LamonGuy HuylebroeckJoost Vennik

A2 Journal Article in PHYSICALIA MAGAZINE

1982

Correlation between DLTS-measurements and the performance of high purity germanium detectors

Eddy SimoenPaul ClauwsJan BroeckxJoost VennikM. Van SandeL. De Laet

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

DLTS and FTIS of new donors in oxygen-doped germanium

Paul ClauwsJan BroeckxEddy SimoenJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS