Research Explorer

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Benoit Bakeroot

Prijzen & Erkenningen

130 Resultaten

2024

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

S. KumarK. GeensA. VohraD. WellekensD. CinguE. FabrisT. CosnierH. HahnBenoit BakerootN. Posthuma et al.

U Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

1200 V p-GaN HEMTs on engineered polycrystalline AlN Substrates

Sujit KumarKaren GeensAnurag VohraDirk WellekensHerwig HahnBenoit BakerootNiels PosthumaStefaan Decoutere

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

M. MillesimoC. FiegnaBenoit BakerootM. BorgaN. PosthumaS. DecoutereE. SangiorgiA. N. Tallarico

U Artikel in een tijdschrift in 2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024

Electrical Stability of MOS Structures With AlON and Al<sub>2</sub>O<sub>3</sub> Dielectrics Deposited on n-and p-Type GaN

Walter Gonçalez FilhoMatteo BorgaKaren GeensMd Arif KhanDeepthi CinguUrmimala ChatterjeeStefaan DecoutereWerner KnaepenSeda KizirPanagiota Arnou et al.

U Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering

Matteo BorgaNiels PosthumaAnurag VohraBenoit BakerootStefaan Decoutere

U Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba AlaeiMatteo BorgaElena FabrisStefaan DecoutereJohan LauwaertBenoit Bakeroot

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN power devices on 200 mm engineered substrates

Benoit BakerootKaren GeensSujit KumarHerbert De PauwMatteo BorgaAnurag VohraUrmimala ChatterjeeStefaan Decoutere

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Walter Gonçalez FilhoMatteo BorgaKaren GeensMd Arif KhanDeepthi CinguUrmimala ChatterjeeAnurag VohraStefaan DecoutereBenoit Bakeroot

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba AlaeiMatteo BorgaElena FabrisStefaan DecoutereJohan LauwaertBenoit Bakeroot

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Monolithic 650-V dual-gate p-GaN bidirectional switch

Giulio BaratellaU. ChatterjeeO. SyshchykM. BorgaE. FabrisT. CosnierBenoit BakerootS. Decoutere

U Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

A. N. TallaricoM. MillesimoM. BorgaBenoit BakerootN. PosthumaT. CosnierS. DecoutereE. SangiorgiC. Fiegna

U Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Route toward commercially manufacturable vertical GaN devices

Karen GeensM. BorgaM. A. KhanW. Goncalez FilhoA. VohraS. BanerjeeK. J. LeeU. ChatterjeeD. CinguBenoit Bakeroot et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

C. BasceriV. OdnoblyudovC. KurthM. YamadaS. KonishiM. KawaharaC.-C. LiaoS. ShenJ. ChiuK. Geens et al.

Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates

Zequan ChenPeng HuangIndraneel SanyallMatthew D. SmithMichael J. UrenAnurag VohraBenoit BakerootMartin Kuball

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Zequan ChenMichael J. UrenPeng HuangIndraneel SanyalMatthew D. SmithAnurag VohraSujit KumarStefaan DecoutereBenoit BakerootMartin Kuball

U Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode

Wei-Syuan LinBenoit BakerootZhen-Hong HuangTing-Chun LoMatteo BorgaDirk WellekensNiels PosthumaStefaan DecoutereTian-Li Wu

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

2023

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel TrojmanEliana AcurioBrice De JaegerNiels PosthumaStefaan DecoutereBenoit Bakeroot

A1 Artikel in een tijdschrift in SOLID-STATE ELECTRONICS

Correlating structural and electrical characteristics of threading dislocations in GaN-on-Si heterostructures and p-n diodes by multiple microscopy techniques

Albert MinjKaren GeensHu LiangHan HanCeline NoelBenoit BakerootKristof ParedisMing ZhaoThomas HantschelStefaan Decoutere

A1 Artikel in een tijdschrift in PHYSICAL REVIEW APPLIED

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Walter Gonçalez FilhoMatteo BorgaKaren GeensDeepthi CinguUrmimala ChatterjeeSourish BanerjeeAnurag VohraHan HanAlbert MinjHerwig Hahn et al.

A1 Artikel in een tijdschrift in SCIENTIFIC REPORTS

High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

D. FaveroA. CavaliereC. De SantiM. BorgaWalter Gonçalez FilhoK. GeensBenoit BakerootS. DecoutereG. MeneghessoE. Zanoni et al.

Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress

M. MillesimoM. BorgaL. ValentiniBenoit BakerootN. PosthumaA. VohraS. DecoutereC. FiegnaA. N. Tallarico

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling of e-mode power GaN-HEMTs for low voltage/low Ron applications : implications on robustness

Andrea BenatoCarlo De SantiMatteo BorgaBenoit BakerootIzabela Kuzma FilipekNiels PosthumaStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Mojtaba AlaeiHerbert De PauwUrmimala ChatterjeeStefaan DecoutereJohan LauwaertBenoit Bakeroot

TCAD-based design and verification of the components of a 200 V GaN-IC platform

Pavan VudumulaThibault CosnierOlga SyshchykBenoit BakerootStefaan Decoutere

A1 Artikel in een tijdschrift in SOLID-STATE ELECTRONICS

Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs

Shun-Wei TangBenoit BakerootZhen-Hong HuangSzu-Chia ChenWei-Syuan LinTing-Chun LoMatteo BorgaDirk WellekensNiels PosthumaStefaan Decoutere et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

2022

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

N. ModoloM. FregolentF. MasinA. BenatoA. BettiniM. BuffoloC. De SantiM. BorgaN. PosthumaBenoit Bakeroot et al.

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. ModoloC. De SantiGiulio BaratellaA. BettiniM. BorgaN. PosthumaBenoit BakerootS. YouS. DecoutereA. Bevilacqua et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Oroceo GallardoSachidananda Dash[missing] Thanh Nga TranZhen-Hong HuangShun-Wei TangDirk WellekensBenoit BakerootOlga SyshchykBrice De JaegerStefaan Decoutere et al.

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates

Matteo BorgaWalter Gonçalez FilhoKaren GeensBenoit BakerootHu LiangStefaan Decoutere

Device optimization for 200V GaN-on-SOI platform for monolithicly integrated power circuits

Olga SyshchykThibault CosnierZheng-Hong HuangDeepthi CinguDirk WellekensAnurag VohraKaren GeensPavan VudumulaUrmimala ChatterjeeStefaan Decoutere et al.

Gate reliability of p-GaN power HEMTs under pulsed stress condition

M. MillesimoBenoit BakerootM. BorgaN. PosthumaS. DecoutereE. SangiorgiC. FiegnaA. N. Tallarico

High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability

Shun-Wei TangZhen-Hong HuangSzu-Chia ChenWei-Syuan LinBrice de JaegerDirk WellekensMatteo BorgaBenoit BakerootStefaan DecoutereTian-Li Wu

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D. FaveroC. De SantiK. MukherjeeM. BorgaK. GeensU. ChatterjeeBenoit BakerootS. DecoutereF. RampazzoG. Meneghesso et al.

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

Influence of drain and gate potential on gate failure in semi-vertical GaN-on-Si trench MOSFETs

D. FaveroC. De SantiK. MukherjeeK. GeensM. BorgaBenoit BakerootS. YouS. DecoutereG. MeneghessoE. Zanoni et al.

Study and characterization of GaN MOS capacitors : planar vs trench topographies

K. MukherjeeC. De SantiS. YouK. GeensM. BorgaS. DecoutereBenoit BakerootP. DiehleF. AltmannG. Meneghesso et al.

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

TCAD modeling of the dynamic VTH hysteresis under fast sweeping characterization in p-GaN gate HEMTs

A. N. TallaricoM. MillesimoBenoit BakerootM. BorgaN. PosthumaS. DecoutereE. SangiorgiC. Fiegna

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. MillesimoM. BorgaBenoit BakerootN. PosthumaS. DecoutereE. SangiorgiC. FiegnaA. N. Tallarico

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

2021

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

T. CosnierO. SyshchykB. De JaegerK. GeensD. CinguElena FabrisM. BorgaA. VohraM. ZhaoBenoit Bakeroot et al.

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa MukherjeeCarlo De SantiMatteo BorgaKaren GeensShuzhen YouBenoit BakerootStefaan DecouterePatrick DiehleSusanne HuebnerFrank Altmann et al.

A1 Artikel in een tijdschrift in MATERIALS

Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun HsuEddy SimoenHu LiangBrice De JaegerBenoit BakerootDirk WellekensStefaan Decoutere

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. MillesimoC. FiegnaN. PosthumaM. BorgaBenoit BakerootS. DecoutereA. N. Tallarico

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

A. MinjM. ZhaoBenoit BakerootK. Paredis

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. MillesimoN. PosthumaBenoit BakerootM. BorgaS. DecoutereA. N. Tallarico

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong LiNiels PosthumaBenoit BakerootHu LiangShuzhen YouZhicheng WuMing ZhaoGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON POWER ELECTRONICS

ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana AcurioLionel TrojmanBrice de JaegerBenoit BakerootStefaan Decoutere

Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi CinguXiangdong LiBenoit BakerootNooshin AmirifarKaren GeensKristof J. P. JacobsMing ZhaoShuzhen YouGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

Arno StockmanEleonora CanatoMatteo MeneghiniGaudenzio MeneghessoPeter MoensBenoit Bakeroot

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo GallardoBrice De JaegerSachidananda DashShun-Wei TangThanh Nga TranDirk WellekensBenoit BakerootStefaan DecoutereTian-Li Wu

Surface-potential-based compact modeling of p-GaN gate HEMTs

Jie WangZhanfei ChenShuzhen YouBenoit BakerootJun LiuStefaan Decoutere

A1 Artikel in een tijdschrift in MICROMACHINES

Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Kalparupa MukherjeeCarlo De SantiMatteo BuffoloMatteo BorgaShuzhen YouKaren GeensBenoit BakerootStefaan DecoutereAndrea GerosaGaudenzio Meneghesso et al.

A1 Artikel in een tijdschrift in MICROMACHINES

2020

Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Kalparupa MukherjeeCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniShuzhen YouKaren GeensMatteo BorgaBenoit BakerootStefaan Decoutere

Design of highly efficient monolithically integrated capacitive charge pumps for low-power applications

Hui PengJan DoutreloigneBenoit BakerootDries Dellaert

Exploration of gate trench module for vertical GaN devices

M. RuzzarinK. GeensM. BorgaH. LiangS. YouBenoit BakerootS. DecoutereC. De SantiA. NevianiM. Meneghini et al.

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong LiKaren GeensDirk WellekensMing ZhaoAlessandro MagnaniNooshin AmirifarBenoit BakerootShuzhen YouDirk FahleHerwig Hahn et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip WachMichael J. UrenBenoit BakerootMing ZhaoStefaan DecoutereMartin Kuball

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Matteo BorgaKalparupa MukherjeeCarlo De SantiSteve StoffelsKaren GeensShuzhen YouBenoit BakerootStefaan DecoutereGaudenzio MeneghessoEnrico Zanoni et al.

A1 Artikel in een tijdschrift in APPLIED PHYSICS EXPRESS

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Matteo BorgaCarlo De SantiS. StoffelsBenoit BakerootXiangdong LiM. ZhaoM. Van HoveS. DecoutereGaudenzio MeneghessoMatteo Meneghini et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong LiBenoit BakerootZhicheng WuNooshin AmirifarShuzhen YouNiels PosthumaMing ZhaoHu LiangGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors

Arno StockmanBenoit BakerootJan Doutreloigne

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. TallaricoN. E. PosthumaBenoit BakerootS. DecoutereE. SangiorgiC. Fiegna

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie WangZhanfei ChenShuzhen YouWenyong ZhouBenoit BakerootJun LiuLingling SunStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa MukherjeeCarlo De SantiMatteo BorgaShuzhen YouKaren GeensBenoit BakerootStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

A1 Artikel in een tijdschrift in MATERIALS

Using RESURF technique for edge termination of semi-vertical GaN devices

Benoit BakerootK. GeensM. BorgaH. LiangS. YouS. Decoutere

2019

Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Xiangdong LiMing ZhaoBenoit BakerootKaren GeensWeiming GuoShuzhen YouSteve StoffelsVesa-Pekka LempinenJaakko SormunenGuido Groeseneken et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. LiN; AmirifarK. GeensM. ZhaoW. GuoH. LiangS. YouN. PosthumaB. De JaegerS. Stoffels et al.

Gate reliability of p-GaN HEMT with gate metal retraction

A. N. TallaricoS. StoffelsN. PosthumaBenoit BakerootS. DecoutereE. SangiorgiC. Fiegna

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Eliana AcurioFelice CrupiNicolo RonchiBrice De JaegerBenoit BakerootStefaan DecoutereLionel Trojman

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

S. StoffelsN. PosthumaS. DecoutereBenoit BakerootA. N. TallaricoEnrico SangiorgiClaudio FiegnaJ. ZhengX. MaM. Borga et al.

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno StockmanA. TajalliM. MeneghiniM. J. UrenS. MouhoubiS. GerardinM. BagatinA. PaccagnellaG. MeneghessoE. Zanoni et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Arno StockmanEleonora CanatoMatteo MeneghiniGaudenzio MeneghessoPeter MoensBenoit Bakeroot

Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

Benoit BakerootSteve StoffelsNiels PosthumaDirk WellekensStefaan Decoutere

2018

Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Benoit BakerootArno StockmanNiels PosthumaSteve StoffelsStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

A. TajalliArno StockmanM. MeneghiniS. MouhoubiA. BanerjeeS. GerardinM. BagatinA. PaccagnellaE. ZanoniM. Tack et al.

Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

Arno StockmanFabrizio MasinMatteo MeneghiniEnrico ZanoniGaudenzio MeneghessoBenoit BakerootPeter Moens

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates

Xiangdong LiMarleen Van HoveMing ZhaoBenoit BakerootShuzhen YouGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Arno StockmanE. CanatoA. TajalliM. MeneghiniG. MeneghessoE. ZanoniP. MoensBenoit Bakeroot

Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Eliana AcurioFelice CrupiNicolo RonchiBrice De JaegerBenoit BakerootStefaan DecoutereLionel Trojman

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben RackauskasMichael J. UrenSteve StoffelsMing ZhaoBenoit BakerootStefaan DecoutereMartin Kuball

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes

Benoit Bakeroot

2017

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li WuBenoit BakerootHu LiangNiels PosthumaShuzhen YouNicolo RonchiSteve StoffelsDenis MarconStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

N. RonchiBenoit BakerootS. YouJ. HuS. StoffelsT.-L. WuB. De JaegerS. Decoutere

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on

Arno StockmanMichael UrenAlaleh TajalliMatteo MeneghiniBenoit BakerootPeter Moens

Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests

Jie HuSteve StoffelsMing ZhaoAndrea Natale TallaricoIsabella RossettoMatteo MeneghiniXuanwu KangBenoit BakerootDenis MarconBen Kaczer et al.

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

2016

Device breakdown optimization of Al2O3/GaN MISFETs

X. KangD. WellekensM. Van HoveB. De JaegerN. RonchiT. -L. WuS. YouBenoit BakerootJ. HuD. Marcon et al.

Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Jie HuSteve StoffelsSilvia LenciNicolo RonchiBrice De JaegerShuzen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

J HuS StoffelsS LenciSZ YouBenoit BakerootN RonchiR VenegasG GroesenekenS Decoutere

A1 Artikel in een tijdschrift in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

Nicolo RonchiBenoit BakerootShuzhen YouJie HuSteve StoffelsStefaan Decoutere

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J HuS StoffelsS LenciBenoit BakerootB De JaegerM Van HoveN RonchiR VenegasH LiangM Zhao et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li WuJacopo FrancoDenis MarconBrice De JaegerBenoit BakerootXuanwu KangSteve StoffelsMarleen Van HoveGuido GroesenekenStefaan Decoutere

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Jie HuSteve StoffelsSilvia LenciBrice De JaegerNicolo RonchiAndrea Natale TallaricoDirk WellekensShuzhen YouBenoit BakerootGuido Groeseneken et al.

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL WuJ FrancoD MarconB De JaegerBenoit BakerootS StoffelsM Van HoveG GroesenekenS Decoutere

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

2015

A 16 channel high-voltage driver with 14 bit resolution for driving piezoelectric actuators

Ramses PiercoGuy TorfsJochen VerbruggheBenoit BakerootJohan Bauwelinck

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Tian-Li WuDenis MarconNicolo RonchiBenoit BakerootShuzhen YouSteve StoffelsMarleen Van HoveDavide BisiMatteo MeneghiniGuido Groeseneken

A1 Artikel in een tijdschrift in SOLID-STATE ELECTRONICS

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian-Li WuDenis MarconBenoit BakerootBrice De JaegerHC LinJacopo FrancoSteve StoffelsMarleen Van HoveRobin RoelofsGuido Groeseneken et al.

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Jie HuSteve StoffelsSilvia LenciBenoit BakerootR VenegasG GroesenekenS Decoutere

A1 Artikel in een tijdschrift in APPLIED PHYSICS LETTERS

Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Tian-Li WuDenis MarconShuzhen YouNiels PosthumaBenoit BakerootSteve StoffelsMarleen Van HoveGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes

Jie HuSteve StoffelsSilvia LenciTian-Li WuNicolo RonchiShuzhen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in JAPANESE JOURNAL OF APPLIED PHYSICS

Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

TL WuD MarconB De JaegerM Van HoveBenoit BakerootS StoffelsG GroesenekenS Decoutere

2014

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Benoit BakerootS YouT-L WuJ HuM Van HoveB De JaegerK GeensS StoffelsS Decoutere

A1 Artikel in een tijdschrift in JOURNAL OF APPLIED PHYSICS

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Jie HuSteve StoffelsSilvia LenciNicolo RonchiRafael VenegasShuzhen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

A1 Artikel in een tijdschrift in MICROELECTRONICS RELIABILITY

TCAD methodology for simulation of GaN-HEMT power devices

Stephan StraussAxel ErlebachTommaso CilentoMarcon DenisSteve StoffelsBenoit Bakeroot

2013

Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination

Lenci SilviaBrice De JaegerLaureen CarbonellJie HuGeert MannaertDirk WellekensShuzhen YouBenoit BakerootStefaan Decoutere

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

2012

Monolithic integration of an active clamping H-bridge for isolated forward DC-DC converters

Jan DoutreloigneAnn MontéBenoit BakerootJindrich Windels

Monolithic integration of the synchronous rectifier in isolated forward DC-DC converters

Jan DoutreloigneBenoit BakerootAnn MontéJindrich Windels

2011

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

P SrivastavaH OprinsM Van HoveJ DasPE MalinowskiBenoit BakerootD MarconD VisalliX KangS Lenci et al.

2008

A high-voltage switching ADSL line-driver, with an n-type output stage

Jodie BuyleVincent De GezelleBenoit BakerootJan Doutreloigne

A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers

Jodie BuyleVincent De GezelleBenoit BakerootJan Doutreloigne

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Benoit BakerootJan DoutreloignePiet VanmeerbeekPeter Moens

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated driver with optical compensation for improved uniformity of emissive displays

Stefaan MaeyaertBenoit BakerootJan DoutreloigneAnn MontéPieter BauwensAndré Van Calster

2007

A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling

Yogesh Singh ChauhanFrançois KrummenacherRenaud GillonBenoit BakerootMichel DeclercqAdrian Mihai Ionescu

A new lateral-IGBT structure with a wider safe operating area

Benoit BakerootJan DoutreloigneP VANMEERBEEKP MOENS

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

An EKV-based high voltage MOSFET model with improved mobility and drift model

Y CHAUHANR GILLONBenoit BakerootF KRUMMENACHERM DECLERCQA IONESCU

A1 Artikel in een tijdschrift in Solid-State Electronics

An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

Benoit BakerootJan DoutreloigneP. VanmeerbeekP. Moens

Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

YS CHAUHANF KRUMMENACHERR GILLONBenoit BakerootMJ DECLERCQAM IONESCU

A1 Artikel in een tijdschrift in IEEE TRANSACTIONS ON ELECTRON DEVICES

2006

A 75 V lateral IGBT for junction-isolated smart power technologies

Benoit BakerootJan DoutreloigneP Moens

Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs

Yooesh Singh ChauhanFrancois KrummenacherCostin AnghelRenuad GillonBenoit BakerootMichel DeclercqAdrian Mihai Lonescu

New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement

C ANGHELBenoit BakerootYS CHAUHANR GILLONC MAIERP MOENSJan DoutreloigneAM IONESCU

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

YS CHAUHANC ANGHELF KRUMMENACHERC MAIERR GILLONBenoit BakerootB DESOETES FREREAB DESORMEAUXA SHARMA et al.

A1 Artikel in een tijdschrift in SOLID-STATE ELECTRONICS

Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation

Benoit BakerootJan DoutreloigneP MOENS

A1 Artikel in een tijdschrift in IEEE ELECTRON DEVICE LETTERS

2005

A new LIGBT structure to suppress substrate currents in a junction isolated technology

Benoit BakerootJan DoutreloigneP MOENS

A1 Artikel in een tijdschrift in SOLID-STATE ELECTRONICS

2004

A new substrate current free nLIGBT for junction isolated technologies

Benoit BakerootJan DoutreloignePeter Moens

2003

Electrical characterisation of high voltage MOSFETs using MESDRIFT

C ANGHELN HEFYENEMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONAM IONESCU

Electrical characterization of high voltage MOSFETs using MESDRIFT

C ANGHELN HEFYENEMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONA IONESCU

2002

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N HefyeneE VestielBenoit BakerootC AnghelS FrereA IonescuR Gillon

Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.

Benoit BakerootMiguel VermandelJan DoutreloignePeter MoensD BOLOGNESI

Future trends in intelligent interface technologies for 42 V battery automotive applications.

Peter MoensD BOLOGNESIL DELOBELD VILLANUEVAK REYNDERSA LOWEG VAN HERZEELEM TACKBenoit Bakeroot

2001

An Experimental Approach for Bias-Dependent Drain Series Resistances Evaluation in Asymmetric HV MOSFETs

N HEFYENEC ANGHELA IONESCUMiguel VermandelBenoit BakerootJan DoutreloigneS FRERER GILLON

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C ANGHELN HEFYENEA IONESCUMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONS FREREC MAIERY MOURIER

Physical modelling strategy for (quasi-) saturation effects in lateral DMOS transistor based on the concept of intrinsic drain voltage

C ANGHELN HEFYENEAM IONESCUMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONS FREREC MAIERY MOURIER

Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.

Benoit BakerootPeter MoensMiguel VermandelJan Doutreloigne