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Onderzoeker
Benoit Bakeroot
Profiel
Projecten
Publicaties
Activiteiten
Prijzen & Erkenningen
115
Resultaten
2024
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Walter Gonçalez Filho
Matteo Borga
Karen Geens
Md Arif Khan
Deepthi Cingu
Urmimala Chatterjee
Anurag Vohra
Stefaan Decoutere
Benoit Bakeroot
U
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2024
Route toward commercially manufacturable vertical GaN devices
Karen Geens
M. Borga
M. A. Khan
W. Goncalez Filho
A. Vohra
S. Banerjee
K. J. Lee
U. Chatterjee
D. Cingu
Benoit Bakeroot
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2024
2023
A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
Lionel Trojman
Eliana Acurio
Brice De Jaeger
Niels Posthuma
Stefaan Decoutere
Benoit Bakeroot
U
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2023
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Albert Minj
Karen Geens
Hu Liang
Han Han
Celine Noel
Benoit Bakeroot
Kristof Paredis
Ming Zhao
Thomas Hantschel
Stefaan Decoutere
U
Artikel in een tijdschrift
in
PHYSICAL REVIEW APPLIED
2023
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Walter Gonçalez Filho
Matteo Borga
Karen Geens
Deepthi Cingu
Urmimala Chatterjee
Sourish Banerjee
Anurag Vohra
Han Han
Albert Minj
Herwig Hahn
et al.
U
Artikel in een tijdschrift
in
SCIENTIFIC REPORTS
2023
High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps
D. Favero
A. Cavaliere
C. De Santi
M. Borga
Walter Gonçalez Filho
K. Geens
Benoit Bakeroot
S. Decoutere
G. Meneghesso
E. Zanoni
et al.
P1
Conferentie
2023
Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress
M. Millesimo
M. Borga
L. Valentini
Benoit Bakeroot
N. Posthuma
A. Vohra
S. Decoutere
C. Fiegna
A. N. Tallarico
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2023
Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
Andrea Benato
Carlo De Santi
Matteo Borga
Benoit Bakeroot
Izabela Kuzma Filipek
Niels Posthuma
Stefaan Decoutere
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
U
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2023
Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform
Mojtaba Alaei
Herbert De Pauw
Urmimala Chatterjee
Stefaan Decoutere
Johan Lauwaert
Benoit Bakeroot
C1
Conferentie
2023
TCAD-based design and verification of the components of a 200 V GaN-IC platform
Pavan Vudumula
Thibault Cosnier
Olga Syshchyk
Benoit Bakeroot
Stefaan Decoutere
U
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2023
Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs
Shun-Wei Tang
Benoit Bakeroot
Zhen-Hong Huang
Szu-Chia Chen
Wei-Syuan Lin
Ting-Chun Lo
Matteo Borga
Dirk Wellekens
Niels Posthuma
Stefaan Decoutere
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2023
2022
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
N. Modolo
M. Fregolent
F. Masin
A. Benato
A. Bettini
M. Buffolo
C. De Santi
M. Borga
N. Posthuma
Benoit Bakeroot
et al.
U
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2022
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
N. Modolo
C. De Santi
Giulio Baratella
A. Bettini
M. Borga
N. Posthuma
Benoit Bakeroot
S. You
S. Decoutere
A. Bevilacqua
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2022
Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
Oroceo Gallardo
Sachidananda Dash
[missing] Thanh Nga Tran
Zhen-Hong Huang
Shun-Wei Tang
Dirk Wellekens
Benoit Bakeroot
Olga Syshchyk
Brice De Jaeger
Stefaan Decoutere
et al.
U
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2022
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Olga Syshchyk
Thibault Cosnier
Zheng-Hong Huang
Deepthi Cingu
Dirk Wellekens
Anurag Vohra
Karen Geens
Pavan Vudumula
Urmimala Chatterjee
Stefaan Decoutere
et al.
U
Artikel in een tijdschrift
in
ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
2022
Gate reliability of p-GaN power HEMTs under pulsed stress condition
M. Millesimo
Benoit Bakeroot
M. Borga
N. Posthuma
S. Decoutere
E. Sangiorgi
C. Fiegna
A. N. Tallarico
U
Conferentie
2022
High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability
Shun-Wei Tang
Zhen-Hong Huang
Szu-Chia Chen
Wei-Syuan Lin
Brice de Jaeger
Dirk Wellekens
Matteo Borga
Benoit Bakeroot
Stefaan Decoutere
Tian-Li Wu
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2022
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
D. Favero
C. De Santi
K. Mukherjee
M. Borga
K. Geens
U. Chatterjee
Benoit Bakeroot
S. Decoutere
F. Rampazzo
G. Meneghesso
et al.
U
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2022
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
D. Favero
C. De Santi
K. Mukherjee
K. Geens
M. Borga
Benoit Bakeroot
S. You
S. Decoutere
G. Meneghesso
E. Zanoni
et al.
U
Artikel in een tijdschrift
in
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
2022
Study and characterization of GaN MOS capacitors : planar vs trench topographies
K. Mukherjee
C. De Santi
S. You
K. Geens
M. Borga
S. Decoutere
Benoit Bakeroot
P. Diehle
F. Altmann
G. Meneghesso
et al.
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2022
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
A. N. Tallarico
M. Millesimo
Benoit Bakeroot
M. Borga
N. Posthuma
S. Decoutere
E. Sangiorgi
C. Fiegna
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2022
The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs
M. Millesimo
M. Borga
Benoit Bakeroot
N. Posthuma
S. Decoutere
E. Sangiorgi
C. Fiegna
A. N. Tallarico
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2022
2021
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
T. Cosnier
O. Syshchyk
B. De Jaeger
K. Geens
D. Cingu
Elena Fabris
M. Borga
A. Vohra
M. Zhao
Benoit Bakeroot
et al.
P1
Conferentie
2021
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization
Kalparupa Mukherjee
Carlo De Santi
Matteo Borga
Karen Geens
Shuzhen You
Benoit Bakeroot
Stefaan Decoutere
Patrick Diehle
Susanne Huebner
Frank Altmann
et al.
A1
Artikel in een tijdschrift
in
MATERIALS
2021
Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
Po-Chun Hsu
Eddy Simoen
Hu Liang
Brice De Jaeger
Benoit Bakeroot
Dirk Wellekens
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2021
High-temperature time-dependent gate breakdown of p-GaN HEMTs
M. Millesimo
C. Fiegna
N. Posthuma
M. Borga
Benoit Bakeroot
S. Decoutere
A. N. Tallarico
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells
A. Minj
M. Zhao
Benoit Bakeroot
K. Paredis
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2021
Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs
M. Millesimo
N. Posthuma
Benoit Bakeroot
M. Borga
S. Decoutere
A. N. Tallarico
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
2021
Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
Xiangdong Li
Niels Posthuma
Benoit Bakeroot
Hu Liang
Shuzhen You
Zhicheng Wu
Ming Zhao
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON POWER ELECTRONICS
2021
ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric
Eliana Acurio
Lionel Trojman
Brice de Jaeger
Benoit Bakeroot
Stefaan Decoutere
P1
Conferentie
2021
Reliability of p-GaN gate HEMTs in reverse conduction
Deepthi Cingu
Xiangdong Li
Benoit Bakeroot
Nooshin Amirifar
Karen Geens
Kristof J. P. Jacobs
Ming Zhao
Shuzhen You
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021
Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
Arno Stockman
Eleonora Canato
Matteo Meneghini
Gaudenzio Meneghesso
Peter Moens
Benoit Bakeroot
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
2021
Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
Jethro Oroceo Gallardo
Brice De Jaeger
Sachidananda Dash
Shun-Wei Tang
Thanh Nga Tran
Dirk Wellekens
Benoit Bakeroot
Stefaan Decoutere
Tian-Li Wu
P1
Conferentie
2021
Surface-potential-based compact modeling of p-GaN gate HEMTs
Jie Wang
Zhanfei Chen
Shuzhen You
Benoit Bakeroot
Jun Liu
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
MICROMACHINES
2021
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs
Kalparupa Mukherjee
Carlo De Santi
Matteo Buffolo
Matteo Borga
Shuzhen You
Karen Geens
Benoit Bakeroot
Stefaan Decoutere
Andrea Gerosa
Gaudenzio Meneghesso
et al.
A1
Artikel in een tijdschrift
in
MICROMACHINES
2021
2020
Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors
Kalparupa Mukherjee
Carlo De Santi
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
Shuzhen You
Karen Geens
Matteo Borga
Benoit Bakeroot
Stefaan Decoutere
P1
Conferentie
2020
Design of highly efficient monolithically integrated capacitive charge pumps for low-power applications
Hui Peng
Jan Doutreloigne
Benoit Bakeroot
Dries Dellaert
Proefschrift
2020
Exploration of gate trench module for vertical GaN devices
M. Ruzzarin
K. Geens
M. Borga
H. Liang
S. You
Benoit Bakeroot
S. Decoutere
C. De Santi
A. Neviani
M. Meneghini
et al.
A1
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2020
Integration of 650 V GaN power ICs on 200 mm engineered substrates
Xiangdong Li
Karen Geens
Dirk Wellekens
Ming Zhao
Alessandro Magnani
Nooshin Amirifar
Benoit Bakeroot
Shuzhen You
Dirk Fahle
Herwig Hahn
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
2020
Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors
Filip Wach
Michael J. Uren
Benoit Bakeroot
Ming Zhao
Stefaan Decoutere
Martin Kuball
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2020
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Matteo Borga
Kalparupa Mukherjee
Carlo De Santi
Steve Stoffels
Karen Geens
Shuzhen You
Benoit Bakeroot
Stefaan Decoutere
Gaudenzio Meneghesso
Enrico Zanoni
et al.
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS EXPRESS
2020
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
Matteo Borga
Carlo De Santi
S. Stoffels
Benoit Bakeroot
Xiangdong Li
M. Zhao
M. Van Hove
S. Decoutere
Gaudenzio Meneghesso
Matteo Meneghini
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization
Xiangdong Li
Benoit Bakeroot
Zhicheng Wu
Nooshin Amirifar
Shuzhen You
Niels Posthuma
Ming Zhao
Hu Liang
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2020
Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors
Arno Stockman
Benoit Bakeroot
Jan Doutreloigne
Proefschrift
2020
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
A. N. Tallarico
N. E. Posthuma
Benoit Bakeroot
S. Decoutere
E. Sangiorgi
C. Fiegna
A1
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2020
Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs
Jie Wang
Zhanfei Chen
Shuzhen You
Wenyong Zhou
Benoit Bakeroot
Jun Liu
Lingling Sun
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability
Kalparupa Mukherjee
Carlo De Santi
Matteo Borga
Shuzhen You
Karen Geens
Benoit Bakeroot
Stefaan Decoutere
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
A1
Artikel in een tijdschrift
in
MATERIALS
2020
Using RESURF technique for edge termination of semi-vertical GaN devices
Benoit Bakeroot
K. Geens
M. Borga
H. Liang
S. You
S. Decoutere
P1
Conferentie
2020
2019
Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
Xiangdong Li
Ming Zhao
Benoit Bakeroot
Karen Geens
Weiming Guo
Shuzhen You
Steve Stoffels
Vesa-Pekka Lempinen
Jaakko Sormunen
Guido Groeseneken
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion
X. Li
N; Amirifar
K. Geens
M. Zhao
W. Guo
H. Liang
S. You
N. Posthuma
B. De Jaeger
S. Stoffels
et al.
P1
Conferentie
2019
Gate reliability of p-GaN HEMT with gate metal retraction
A. N. Tallarico
S. Stoffels
N. Posthuma
Benoit Bakeroot
S. Decoutere
E. Sangiorgi
C. Fiegna
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
Eliana Acurio
Felice Crupi
Nicolo Ronchi
Brice De Jaeger
Benoit Bakeroot
Stefaan Decoutere
Lionel Trojman
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
S. Stoffels
N. Posthuma
S. Decoutere
Benoit Bakeroot
A. N. Tallarico
Enrico Sangiorgi
Claudio Fiegna
J. Zheng
X. Ma
M. Borga
et al.
P1
Conferentie
2019
The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
Arno Stockman
A. Tajalli
M. Meneghini
M. J. Uren
S. Mouhoubi
S. Gerardin
M. Bagatin
A. Paccagnella
G. Meneghesso
E. Zanoni
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Arno Stockman
Eleonora Canato
Matteo Meneghini
Gaudenzio Meneghesso
Peter Moens
Benoit Bakeroot
P1
Conferentie
2019
Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
Benoit Bakeroot
Steve Stoffels
Niels Posthuma
Dirk Wellekens
Stefaan Decoutere
P1
Conferentie
2019
2018
Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
Benoit Bakeroot
Arno Stockman
Niels Posthuma
Steve Stoffels
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
A. Tajalli
Arno Stockman
M. Meneghini
S. Mouhoubi
A. Banerjee
S. Gerardin
M. Bagatin
A. Paccagnella
E. Zanoni
M. Tack
et al.
P1
Conferentie
2018
Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors
Arno Stockman
Fabrizio Masin
Matteo Meneghini
Enrico Zanoni
Gaudenzio Meneghesso
Benoit Bakeroot
Peter Moens
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates
Xiangdong Li
Marleen Van Hove
Ming Zhao
Benoit Bakeroot
Shuzhen You
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Arno Stockman
E. Canato
A. Tajalli
M. Meneghini
G. Meneghesso
E. Zanoni
P. Moens
Benoit Bakeroot
P1
Conferentie
2018
Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
Eliana Acurio
Felice Crupi
Nicolo Ronchi
Brice De Jaeger
Benoit Bakeroot
Stefaan Decoutere
Lionel Trojman
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown
Ben Rackauskas
Michael J. Uren
Steve Stoffels
Ming Zhao
Benoit Bakeroot
Stefaan Decoutere
Martin Kuball
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2018
The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes
Benoit Bakeroot
C1
Conferentie
2018
2017
Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Tian-Li Wu
Benoit Bakeroot
Hu Liang
Niels Posthuma
Shuzhen You
Nicolo Ronchi
Steve Stoffels
Denis Marcon
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2017
Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
N. Ronchi
Benoit Bakeroot
S. You
J. Hu
S. Stoffels
T.-L. Wu
B. De Jaeger
S. Decoutere
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2017
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on
Arno Stockman
Michael Uren
Alaleh Tajalli
Matteo Meneghini
Benoit Bakeroot
Peter Moens
P1
Conferentie
2017
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
Jie Hu
Steve Stoffels
Ming Zhao
Andrea Natale Tallarico
Isabella Rossetto
Matteo Meneghini
Xuanwu Kang
Benoit Bakeroot
Denis Marcon
Ben Kaczer
et al.
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2017
2016
Device breakdown optimization of Al2O3/GaN MISFETs
X. Kang
D. Wellekens
M. Van Hove
B. De Jaeger
N. Ronchi
T. -L. Wu
S. You
Benoit Bakeroot
J. Hu
D. Marcon
et al.
P1
Conferentie
2016
Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
Jie Hu
Steve Stoffels
Silvia Lenci
Nicolo Ronchi
Brice De Jaeger
Shuzen You
Benoit Bakeroot
Guido Groeseneken
Stefaan Decoutere
P1
Conferentie
2016
Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
J Hu
S Stoffels
S Lenci
SZ You
Benoit Bakeroot
N Ronchi
R Venegas
G Groeseneken
S Decoutere
A1
Artikel in een tijdschrift
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2016
Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
Nicolo Ronchi
Benoit Bakeroot
Shuzhen You
Jie Hu
Steve Stoffels
Stefaan Decoutere
P1
Conferentie
2016
Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate
J Hu
S Stoffels
S Lenci
Benoit Bakeroot
B De Jaeger
M Van Hove
N Ronchi
R Venegas
H Liang
M Zhao
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2016
Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
Tian-Li Wu
Jacopo Franco
Denis Marcon
Brice De Jaeger
Benoit Bakeroot
Xuanwu Kang
Steve Stoffels
Marleen Van Hove
Guido Groeseneken
Stefaan Decoutere
P1
Conferentie
2016
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Jie Hu
Steve Stoffels
Silvia Lenci
Brice De Jaeger
Nicolo Ronchi
Andrea Natale Tallarico
Dirk Wellekens
Shuzhen You
Benoit Bakeroot
Guido Groeseneken
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2016
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
TL Wu
J Franco
D Marcon
B De Jaeger
Benoit Bakeroot
S Stoffels
M Van Hove
G Groeseneken
S Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2016
2015
A 16 channel high-voltage driver with 14 bit resolution for driving piezoelectric actuators
Ramses Pierco
Guy Torfs
Jochen Verbrugghe
Benoit Bakeroot
Johan Bauwelinck
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
2015
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Tian-Li Wu
Denis Marcon
Nicolo Ronchi
Benoit Bakeroot
Shuzhen You
Steve Stoffels
Marleen Van Hove
Davide Bisi
Matteo Meneghini
Guido Groeseneken
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2015
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
Tian-Li Wu
Denis Marcon
Benoit Bakeroot
Brice De Jaeger
HC Lin
Jacopo Franco
Steve Stoffels
Marleen Van Hove
Robin Roelofs
Guido Groeseneken
et al.
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2015
Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
Jie Hu
Steve Stoffels
Silvia Lenci
Benoit Bakeroot
R Venegas
G Groeseneken
S Decoutere
A1
Artikel in een tijdschrift
in
APPLIED PHYSICS LETTERS
2015
Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors
Tian-Li Wu
Denis Marcon
Shuzhen You
Niels Posthuma
Benoit Bakeroot
Steve Stoffels
Marleen Van Hove
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2015
Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes
Jie Hu
Steve Stoffels
Silvia Lenci
Tian-Li Wu
Nicolo Ronchi
Shuzhen You
Benoit Bakeroot
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
JAPANESE JOURNAL OF APPLIED PHYSICS
2015
Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs
TL Wu
D Marcon
B De Jaeger
M Van Hove
Benoit Bakeroot
S Stoffels
G Groeseneken
S Decoutere
P1
Conferentie
2015
2014
On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
Benoit Bakeroot
S You
T-L Wu
J Hu
M Van Hove
B De Jaeger
K Geens
S Stoffels
S Decoutere
A1
Artikel in een tijdschrift
in
JOURNAL OF APPLIED PHYSICS
2014
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
Jie Hu
Steve Stoffels
Silvia Lenci
Nicolo Ronchi
Rafael Venegas
Shuzhen You
Benoit Bakeroot
Guido Groeseneken
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2014
TCAD methodology for simulation of GaN-HEMT power devices
Stephan Strauss
Axel Erlebach
Tommaso Cilento
Marcon Denis
Steve Stoffels
Benoit Bakeroot
P1
Conferentie
2014
2013
Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination
Lenci Silvia
Brice De Jaeger
Laureen Carbonell
Jie Hu
Geert Mannaert
Dirk Wellekens
Shuzhen You
Benoit Bakeroot
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2013
2012
Monolithic integration of an active clamping H-bridge for isolated forward DC-DC converters
Jan Doutreloigne
Ann Monté
Benoit Bakeroot
Jindrich Windels
C1
Conferentie
2012
Monolithic integration of the synchronous rectifier in isolated forward DC-DC converters
Jan Doutreloigne
Benoit Bakeroot
Ann Monté
Jindrich Windels
C1
Conferentie
2012
2011
Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
P Srivastava
H Oprins
M Van Hove
J Das
PE Malinowski
Benoit Bakeroot
D Marcon
D Visalli
X Kang
S Lenci
et al.
P1
Conferentie
2011
2008
A high-voltage switching ADSL line-driver, with an n-type output stage
Jodie Buyle
Vincent De Gezelle
Benoit Bakeroot
Jan Doutreloigne
P1
Conferentie
2008
A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers
Jodie Buyle
Vincent De Gezelle
Benoit Bakeroot
Jan Doutreloigne
C1
Conferentie
2008
Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies
Benoit Bakeroot
Jan Doutreloigne
Piet Vanmeerbeek
Peter Moens
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2008
Integrated driver with optical compensation for improved uniformity of emissive displays
Stefaan Maeyaert
Benoit Bakeroot
Jan Doutreloigne
Ann Monté
Pieter Bauwens
André Van Calster
C1
Conferentie
2008
2007
A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling
Yogesh Singh Chauhan
François Krummenacher
Renaud Gillon
Benoit Bakeroot
Michel Declercq
Adrian Mihai Ionescu
P1
Conferentie
2007
A new lateral-IGBT structure with a wider safe operating area
Benoit Bakeroot
Jan Doutreloigne
P VANMEERBEEK
P MOENS
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2007
An EKV-based high voltage MOSFET model with improved mobility and drift model
Y CHAUHAN
R GILLON
Benoit Bakeroot
F KRUMMENACHER
M DECLERCQ
A IONESCU
A1
Artikel in een tijdschrift
in
Solid-State Electronics
2007
An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies
Benoit Bakeroot
Jan Doutreloigne
P. Vanmeerbeek
P. Moens
P1
Conferentie
2007
Compact modeling of lateral nonuniform doping in high-voltage MOSFETs
YS CHAUHAN
F KRUMMENACHER
R GILLON
Benoit Bakeroot
MJ DECLERCQ
AM IONESCU
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2007
2006
A 75 V lateral IGBT for junction-isolated smart power technologies
Benoit Bakeroot
Jan Doutreloigne
P Moens
P1
Conferentie
2006
Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs
Yooesh Singh Chauhan
Francois Krummenacher
Costin Anghel
Renuad Gillon
Benoit Bakeroot
Michel Declercq
Adrian Mihai Lonescu
P1
Conferentie
2006
New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement
C ANGHEL
Benoit Bakeroot
YS CHAUHAN
R GILLON
C MAIER
P MOENS
Jan Doutreloigne
AM IONESCU
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2006
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects
YS CHAUHAN
C ANGHEL
F KRUMMENACHER
C MAIER
R GILLON
Benoit Bakeroot
B DESOETE
S FRERE
AB DESORMEAUX
A SHARMA
et al.
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2006
Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation
Benoit Bakeroot
Jan Doutreloigne
P MOENS
A1
Artikel in een tijdschrift
in
IEEE ELECTRON DEVICE LETTERS
2006
2005
A new LIGBT structure to suppress substrate currents in a junction isolated technology
Benoit Bakeroot
Jan Doutreloigne
P MOENS
A1
Artikel in een tijdschrift
in
SOLID-STATE ELECTRONICS
2005
2004
A new substrate current free nLIGBT for junction isolated technologies
Benoit Bakeroot
Jan Doutreloigne
Peter Moens
P1
Conferentie
2004
2003
Electrical characterisation of high voltage MOSFETs using MESDRIFT
C ANGHEL
N HEFYENE
Miguel Vermandel
Benoit Bakeroot
Jan Doutreloigne
R GILLON
AM IONESCU
P1
Conferentie
2003
Electrical characterization of high voltage MOSFETs using MESDRIFT
C ANGHEL
N HEFYENE
Miguel Vermandel
Benoit Bakeroot
Jan Doutreloigne
R GILLON
A IONESCU
C1
Conferentie
2003
2002
Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET
N Hefyene
E Vestiel
Benoit Bakeroot
C Anghel
S Frere
A Ionescu
R Gillon
P1
Conferentie
2002
Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.
Benoit Bakeroot
Miguel Vermandel
Jan Doutreloigne
Peter Moens
D BOLOGNESI
C1
Conferentie
2002
Future trends in intelligent interface technologies for 42 V battery automotive applications.
Peter Moens
D BOLOGNESI
L DELOBEL
D VILLANUEVA
K REYNDERS
A LOWE
G VAN HERZEELE
M TACK
Benoit Bakeroot
C1
Conferentie
2002
2001
An Experimental Approach for Bias-Dependent Drain Series Resistances Evaluation in Asymmetric HV MOSFETs
N HEFYENE
C ANGHEL
A IONESCU
Miguel Vermandel
Benoit Bakeroot
Jan Doutreloigne
S FRERE
R GILLON
C1
Conferentie
2001
Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage
C ANGHEL
N HEFYENE
A IONESCU
Miguel Vermandel
Benoit Bakeroot
Jan Doutreloigne
R GILLON
S FRERE
C MAIER
Y MOURIER
C1
Conferentie
2001
Physical modelling strategy for (quasi-) saturation effects in lateral DMOS transistor based on the concept of intrinsic drain voltage
C ANGHEL
N HEFYENE
AM IONESCU
Miguel Vermandel
Benoit Bakeroot
Jan Doutreloigne
R GILLON
S FRERE
C MAIER
Y MOURIER
P1
Conferentie
2001
Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.
Benoit Bakeroot
Peter Moens
Miguel Vermandel
Jan Doutreloigne
C1
Conferentie
2001