Research Explorer

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Researcher

Benoit Bakeroot

92 Results

2022

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

A. N. TallaricoM. MillesimoBenoit BakerootM. BorgaN. PosthumaS. DecoutereE. SangiorgiC. Fiegna

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

2021

Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization

Kalparupa MukherjeeCarlo De SantiMatteo BorgaKaren GeensShuzhen YouBenoit BakerootStefaan DecouterePatrick DiehleSusanne HuebnerFrank AltmannMatteo BuffoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

A1 Journal Article in MATERIALS

Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun HsuEddy SimoenHu LiangBrice De JaegerBenoit BakerootDirk WellekensStefaan Decoutere

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. MillesimoC. FiegnaN. PosthumaM. BorgaBenoit BakerootS. DecoutereA. N. Tallarico

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

A. MinjM. ZhaoBenoit BakerootK. Paredis

A1 Journal Article in APPLIED PHYSICS LETTERS

Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs

M. MillesimoN. PosthumaBenoit BakerootM. BorgaS. DecoutereA. N. Tallarico

A1 Journal Article in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics

Xiangdong LiNiels PosthumaBenoit BakerootHu LiangShuzhen YouZhicheng WuMing ZhaoGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON POWER ELECTRONICS

ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana AcurioLionel TrojmanBrice de JaegerBenoit BakerootStefaan Decoutere

Reliability of p-GaN gate HEMTs in reverse conduction

Deepthi CinguXiangdong LiBenoit BakerootNooshin AmirifarKaren GeensKristof J. P. JacobsMing ZhaoShuzhen YouGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

Arno StockmanEleonora CanatoMatteo MeneghiniGaudenzio MeneghessoPeter MoensBenoit Bakeroot

A1 Journal Article in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo GallardoBrice De JaegerSachidananda DashShun-Wei TangThanh Nga TranDirk WellekensBenoit BakerootStefaan DecoutereTian-Li Wu

Surface-potential-based compact modeling of p-GaN gate HEMTs

Jie WangZhanfei ChenShuzhen YouBenoit BakerootJun LiuStefaan Decoutere

A1 Journal Article in MICROMACHINES

Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs

Kalparupa MukherjeeCarlo De SantiMatteo BuffoloMatteo BorgaShuzhen YouKaren GeensBenoit BakerootStefaan DecoutereAndrea GerosaGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

A1 Journal Article in MICROMACHINES

2020

Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors

Kalparupa MukherjeeCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniShuzhen YouKaren GeensMatteo BorgaBenoit BakerootStefaan Decoutere

Design of highly efficient monolithically integrated capacitive charge pumps for low-power applications

Hui PengJan DoutreloigneBenoit BakerootDries Dellaert

Exploration of gate trench module for vertical GaN devices

M. RuzzarinK. GeensM. BorgaH. LiangS. YouBenoit BakerootS. DecoutereC. De SantiA. NevianiM. MeneghiniG. MeneghessoE. Zanoni

A1 Journal Article in MICROELECTRONICS RELIABILITY

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong LiKaren GeensDirk WellekensMing ZhaoAlessandro MagnaniNooshin AmirifarBenoit BakerootShuzhen YouDirk FahleHerwig HahnMichael HeukenVlad OdnoblyudovOzgur AktasCem BasceriDenis MarconGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip WachMichael J. UrenBenoit BakerootMing ZhaoStefaan DecoutereMartin Kuball

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Matteo BorgaKalparupa MukherjeeCarlo De SantiSteve StoffelsKaren GeensShuzhen YouBenoit BakerootStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

A1 Journal Article in APPLIED PHYSICS EXPRESS

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Matteo BorgaCarlo De SantiS. StoffelsBenoit BakerootXiangdong LiM. ZhaoM. Van HoveS. DecoutereGaudenzio MeneghessoMatteo MeneghiniEnrico Zanoni

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong LiBenoit BakerootZhicheng WuNooshin AmirifarShuzhen YouNiels PosthumaMing ZhaoHu LiangGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors

Arno StockmanBenoit BakerootJan Doutreloigne

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. TallaricoN. E. PosthumaBenoit BakerootS. DecoutereE. SangiorgiC. Fiegna

A1 Journal Article in MICROELECTRONICS RELIABILITY

Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie WangZhanfei ChenShuzhen YouWenyong ZhouBenoit BakerootJun LiuLingling SunStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa MukherjeeCarlo De SantiMatteo BorgaShuzhen YouKaren GeensBenoit BakerootStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini

A1 Journal Article in MATERIALS

Using RESURF technique for edge termination of semi-vertical GaN devices

Benoit BakerootK. GeensM. BorgaH. LiangS. YouS. Decoutere

2019

Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Xiangdong LiMing ZhaoBenoit BakerootKaren GeensWeiming GuoShuzhen YouSteve StoffelsVesa-Pekka LempinenJaakko SormunenGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. LiN; AmirifarK. GeensM. ZhaoW. GuoH. LiangS. YouN. PosthumaB. De JaegerS. StoffelsBenoit BakerootD. WellekensB. VanhoveT. CosnierR. LangerD. MarconG. GroesenekenS. Decoutere

Gate reliability of p-GaN HEMT with gate metal retraction

A. N. TallaricoS. StoffelsN. PosthumaBenoit BakerootS. DecoutereE. SangiorgiC. Fiegna

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Eliana AcurioFelice CrupiNicolo RonchiBrice De JaegerBenoit BakerootStefaan DecoutereLionel Trojman

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability

S. StoffelsN. PosthumaS. DecoutereBenoit BakerootA. N. TallaricoEnrico SangiorgiClaudio FiegnaJ. ZhengX. MaM. BorgaElena FabrisM. MeneghiniE. ZanoniG. MeneghessoJ. PriesolA. Satka

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno StockmanA. TajalliM. MeneghiniM. J. UrenS. MouhoubiS. GerardinM. BagatinA. PaccagnellaG. MeneghessoE. ZanoniP. MoensBenoit Bakeroot

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Arno StockmanEleonora CanatoMatteo MeneghiniGaudenzio MeneghessoPeter MoensBenoit Bakeroot

Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate

Benoit BakerootSteve StoffelsNiels PosthumaDirk WellekensStefaan Decoutere

2018

Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Benoit BakerootArno StockmanNiels PosthumaSteve StoffelsStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

A. TajalliArno StockmanM. MeneghiniS. MouhoubiA. BanerjeeS. GerardinM. BagatinA. PaccagnellaE. ZanoniM. TackBenoit BakerootP. MoensG. Meneghesso

Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

Arno StockmanFabrizio MasinMatteo MeneghiniEnrico ZanoniGaudenzio MeneghessoBenoit BakerootPeter Moens

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates

Xiangdong LiMarleen Van HoveMing ZhaoBenoit BakerootShuzhen YouGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Arno StockmanE. CanatoA. TajalliM. MeneghiniG. MeneghessoE. ZanoniP. MoensBenoit Bakeroot

Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination

Eliana AcurioFelice CrupiNicolo RonchiBrice De JaegerBenoit BakerootStefaan DecoutereLionel Trojman

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown

Ben RackauskasMichael J. UrenSteve StoffelsMing ZhaoBenoit BakerootStefaan DecoutereMartin Kuball

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes

Benoit Bakeroot

2017

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Tian-Li WuBenoit BakerootHu LiangNiels PosthumaShuzhen YouNicolo RonchiSteve StoffelsDenis MarconStefaan Decoutere

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

N. RonchiBenoit BakerootS. YouJ. HuS. StoffelsT.-L. WuB. De JaegerS. Decoutere

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on

Arno StockmanMichael UrenAlaleh TajalliMatteo MeneghiniBenoit BakerootPeter Moens

2016

Device breakdown optimization of Al2O3/GaN MISFETs

X. KangD. WellekensM. Van HoveB. De JaegerN. RonchiT. -L. WuS. YouBenoit BakerootJ. HuD. MarconS. StoffelsS. Decoutere

Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Jie HuSteve StoffelsSilvia LenciNicolo RonchiBrice De JaegerShuzen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

J HuS StoffelsS LenciSZ YouBenoit BakerootN RonchiR VenegasG GroesenekenS Decoutere

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

Nicolo RonchiBenoit BakerootShuzhen YouJie HuSteve StoffelsStefaan Decoutere

Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J HuS StoffelsS LenciBenoit BakerootB De JaegerM Van HoveN RonchiR VenegasH LiangM ZhaoG GroesenekenS Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Tian-Li WuJacopo FrancoDenis MarconBrice De JaegerBenoit BakerootXuanwu KangSteve StoffelsMarleen Van HoveGuido GroesenekenStefaan Decoutere

Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

Jie HuSteve StoffelsSilvia LenciBrice De JaegerNicolo RonchiAndrea Natale TallaricoDirk WellekensShuzhen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

TL WuJ FrancoD MarconB De JaegerBenoit BakerootS StoffelsM Van HoveG GroesenekenS Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

2015

A 16 channel high-voltage driver with 14 bit resolution for driving piezoelectric actuators

Ramses PiercoGuy TorfsJochen VerbruggheBenoit BakerootJohan Bauwelinck

A1 Journal Article in IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Tian-Li WuDenis MarconNicolo RonchiBenoit BakerootShuzhen YouSteve StoffelsMarleen Van HoveDavide BisiMatteo MeneghiniGuido Groeseneken

A1 Journal Article in SOLID-STATE ELECTRONICS

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Tian-Li WuDenis MarconBenoit BakerootBrice De JaegerHC LinJacopo FrancoSteve StoffelsMarleen Van HoveRobin RoelofsGuido GroesenekenStefaan Decoutere

A1 Journal Article in APPLIED PHYSICS LETTERS

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Jie HuSteve StoffelsSilvia LenciBenoit BakerootR VenegasG GroesenekenS Decoutere

A1 Journal Article in APPLIED PHYSICS LETTERS

Forward bias gate breakdown mechanism in enhancement-mode p-GaN Gate AlGaN/GaN high-electron mobility transistors

Tian-Li WuDenis MarconShuzhen YouNiels PosthumaBenoit BakerootSteve StoffelsMarleen Van HoveGuido GroesenekenStefaan Decoutere

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

Investigation of constant voltage off-state stress on au-free AlGaN/GaN Schottky Barrier diodes

Jie HuSteve StoffelsSilvia LenciTian-Li WuNicolo RonchiShuzhen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

TL WuD MarconB De JaegerM Van HoveBenoit BakerootS StoffelsG GroesenekenS Decoutere

2014

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Benoit BakerootS YouT-L WuJ HuM Van HoveB De JaegerK GeensS StoffelsS Decoutere

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Jie HuSteve StoffelsSilvia LenciNicolo RonchiRafael VenegasShuzhen YouBenoit BakerootGuido GroesenekenStefaan Decoutere

A1 Journal Article in MICROELECTRONICS RELIABILITY

TCAD methodology for simulation of GaN-HEMT power devices

Stephan StraussAxel ErlebachTommaso CilentoMarcon DenisSteve StoffelsBenoit Bakeroot

2013

Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination

Lenci SilviaBrice De JaegerLaureen CarbonellJie HuGeert MannaertDirk WellekensShuzhen YouBenoit BakerootStefaan Decoutere

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

2012

Monolithic integration of an active clamping H-bridge for isolated forward DC-DC converters

Jan DoutreloigneAnn MontéBenoit BakerootJindrich Windels

Monolithic integration of the synchronous rectifier in isolated forward DC-DC converters

Jan DoutreloigneBenoit BakerootAnn MontéJindrich Windels

2011

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

P SrivastavaH OprinsM Van HoveJ DasPE MalinowskiBenoit BakerootD MarconD VisalliX KangS LenciK GeensJ ViaeneK ChengM LeysI De WolfS DecoutereRP MertensG Borghs

2008

A high-voltage switching ADSL line-driver, with an n-type output stage

Jodie BuyleVincent De GezelleBenoit BakerootJan Doutreloigne

A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers

Jodie BuyleVincent De GezelleBenoit BakerootJan Doutreloigne

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Benoit BakerootJan DoutreloignePiet VanmeerbeekPeter Moens

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated driver with optical compensation for improved uniformity of emissive displays

Stefaan MaeyaertBenoit BakerootJan DoutreloigneAnn MontéPieter BauwensAndré Van Calster

2007

A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling

Yogesh Singh ChauhanFrançois KrummenacherRenaud GillonBenoit BakerootMichel DeclercqAdrian Mihai Ionescu

A new lateral-IGBT structure with a wider safe operating area

Benoit BakerootJan DoutreloigneP VANMEERBEEKP MOENS

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

An EKV-based high voltage MOSFET model with improved mobility and drift model

Y CHAUHANR GILLONBenoit BakerootF KRUMMENACHERM DECLERCQA IONESCU

A1 Journal Article in Solid-State Electronics

An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies

Benoit BakerootJan DoutreloigneP. VanmeerbeekP. Moens

Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

YS CHAUHANF KRUMMENACHERR GILLONBenoit BakerootMJ DECLERCQAM IONESCU

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

2006

A 75 V lateral IGBT for junction-isolated smart power technologies

Benoit BakerootJan DoutreloigneP Moens

Analysis and modeling of lateral non-uniform doping in high-voltage MOSFETs

Yooesh Singh ChauhanFrancois KrummenacherCostin AnghelRenuad GillonBenoit BakerootMichel DeclercqAdrian Mihai Lonescu

New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement

C ANGHELBenoit BakerootYS CHAUHANR GILLONC MAIERP MOENSJan DoutreloigneAM IONESCU

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

YS CHAUHANC ANGHELF KRUMMENACHERC MAIERR GILLONBenoit BakerootB DESOETES FREREAB DESORMEAUXA SHARMAM DECLERCQAM IONESCU

A1 Journal Article in SOLID-STATE ELECTRONICS

Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation

Benoit BakerootJan DoutreloigneP MOENS

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

2005

A new LIGBT structure to suppress substrate currents in a junction isolated technology

Benoit BakerootJan DoutreloigneP MOENS

A1 Journal Article in SOLID-STATE ELECTRONICS

2004

A new substrate current free nLIGBT for junction isolated technologies

Benoit BakerootJan DoutreloignePeter Moens

2003

Electrical characterisation of high voltage MOSFETs using MESDRIFT

C ANGHELN HEFYENEMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONAM IONESCU

Electrical characterization of high voltage MOSFETs using MESDRIFT

C ANGHELN HEFYENEMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONA IONESCU

2002

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET

N HefyeneE VestielBenoit BakerootC AnghelS FrereA IonescuR Gillon

Cost effective implementation of a 90 V RESURF P-type Drain extended MOS in a 0.35 um based smart power technology.

Benoit BakerootMiguel VermandelJan DoutreloignePeter MoensD BOLOGNESI

Future trends in intelligent interface technologies for 42 V battery automotive applications.

Peter MoensD BOLOGNESIL DELOBELD VILLANUEVAK REYNDERSA LOWEG VAN HERZEELEM TACKBenoit Bakeroot

2001

An Experimental Approach for Bias-Dependent Drain Series Resistances Evaluation in Asymmetric HV MOSFETs

N HEFYENEC ANGHELA IONESCUMiguel VermandelBenoit BakerootJan DoutreloigneS FRERER GILLON

Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage

C ANGHELN HEFYENEA IONESCUMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONS FREREC MAIERY MOURIER

Physical modelling strategy for (quasi-) saturation effects in lateral DMOS transistor based on the concept of intrinsic drain voltage

C ANGHELN HEFYENEAM IONESCUMiguel VermandelBenoit BakerootJan DoutreloigneR GILLONS FREREC MAIERY MOURIER

Using Adaptive Resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors.

Benoit BakerootPeter MoensMiguel VermandelJan Doutreloigne