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Onderzoeker
Arno Stockman
Profiel
Projecten
Publicaties
Activiteiten
Prijzen & Erkenningen
16
Resultaten
2021
Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
Arno Stockman
Eleonora Canato
Matteo Meneghini
Gaudenzio Meneghesso
Peter Moens
Benoit Bakeroot
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
2021
2020
Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors
Arno Stockman
Benoit Bakeroot
Jan Doutreloigne
Proefschrift
2020
2019
A physical-statistical approach to AlGaN/GaN HEMT reliability
Peter Moens
Arno Stockman
P1
Conferentie
2019
Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3
Celine Vanhaverbeke
Maarten Cauwe
Arno Stockman
Maaike Op de Beeck
Herbert De Smet
A1
Artikel in een tijdschrift
in
THIN SOLID FILMS
2019
Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
P. Moens
A. Constant
Arno Stockman
J. Franchi
F. Allerstam
P1
Conferentie
2019
ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping
E. Canato
M. Meneghini
A. Nardo
F. Masin
A. Barbato
M. Barbato
Arno Stockman
A. Banerjee
P. Moens
E. Zanoni
et al.
A1
Artikel in een tijdschrift
in
MICROELECTRONICS RELIABILITY
2019
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
A. Tajalli
E. Canato
A. Nardo
M. Meneghini
Arno Stockman
Peter Moens
E. Zanoni
G. Meneghesso
P1
Conferentie
2019
Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
E. Canato
F. Masin
M. Borga
E. Zanoni
M. Meneghini
G. Meneghesso
Arno Stockman
A. Banerjee
P. Moens
P1
Conferentie
2019
The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
Arno Stockman
A. Tajalli
M. Meneghini
M. J. Uren
S. Mouhoubi
S. Gerardin
M. Bagatin
A. Paccagnella
G. Meneghesso
E. Zanoni
et al.
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Arno Stockman
Eleonora Canato
Matteo Meneghini
Gaudenzio Meneghesso
Peter Moens
Benoit Bakeroot
P1
Conferentie
2019
2018
Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
Benoit Bakeroot
Arno Stockman
Niels Posthuma
Steve Stoffels
Stefaan Decoutere
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
A. Tajalli
Arno Stockman
M. Meneghini
S. Mouhoubi
A. Banerjee
S. Gerardin
M. Bagatin
A. Paccagnella
E. Zanoni
M. Tack
et al.
P1
Conferentie
2018
Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors
Arno Stockman
Fabrizio Masin
Matteo Meneghini
Enrico Zanoni
Gaudenzio Meneghesso
Benoit Bakeroot
Peter Moens
A1
Artikel in een tijdschrift
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2018
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Arno Stockman
E. Canato
A. Tajalli
M. Meneghini
G. Meneghesso
E. Zanoni
P. Moens
Benoit Bakeroot
P1
Conferentie
2018
2017
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on
Arno Stockman
Michael Uren
Alaleh Tajalli
Matteo Meneghini
Benoit Bakeroot
Peter Moens
P1
Conferentie
2017
Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation
M. Meneghini
A. Tajalli
P. Moens
A. Baneree
Arno Stockman
M. Tack
S. Gerardin
M. Bagatin
A. Paccagnella
E. Zanoni
et al.
P1
Conferentie
2017