Research Explorer

Your browser does not support JavaScript or JavaScript is not enabled. Without JavaScript some functions of this webapplication may be disabled or cause error messages. To enable JavaScript, please consult the manual of your browser or contact your system administrator.

Researcher

Arno Stockman

Awards & Distinctions

16 Results

2021

Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs

Arno StockmanEleonora CanatoMatteo MeneghiniGaudenzio MeneghessoPeter MoensBenoit Bakeroot

A1 Journal Article in IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

2020

Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors

Arno StockmanBenoit BakerootJan Doutreloigne

2019

A physical-statistical approach to AlGaN/GaN HEMT reliability

Peter MoensArno Stockman

Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3

Celine VanhaverbekeMaarten CauweArno StockmanMaaike Op de BeeckHerbert De Smet

A1 Journal Article in THIN SOLID FILMS

Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

P. MoensA. ConstantArno StockmanJ. FranchiF. Allerstam

ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping

E. CanatoM. MeneghiniA. NardoF. MasinA. BarbatoM. BarbatoArno StockmanA. BanerjeeP. MoensE. Zanoni et al.

A1 Journal Article in MICROELECTRONICS RELIABILITY

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

A. TajalliE. CanatoA. NardoM. MeneghiniArno StockmanPeter MoensE. ZanoniG. Meneghesso

Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

E. CanatoF. MasinM. BorgaE. ZanoniM. MeneghiniG. MeneghessoArno StockmanA. BanerjeeP. Moens

The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors

Arno StockmanA. TajalliM. MeneghiniM. J. UrenS. MouhoubiS. GerardinM. BagatinA. PaccagnellaG. MeneghessoE. Zanoni et al.

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

Arno StockmanEleonora CanatoMatteo MeneghiniGaudenzio MeneghessoPeter MoensBenoit Bakeroot

2018

Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors

Benoit BakerootArno StockmanNiels PosthumaSteve StoffelsStefaan Decoutere

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

A. TajalliArno StockmanM. MeneghiniS. MouhoubiA. BanerjeeS. GerardinM. BagatinA. PaccagnellaE. ZanoniM. Tack et al.

Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors

Arno StockmanFabrizio MasinMatteo MeneghiniEnrico ZanoniGaudenzio MeneghessoBenoit BakerootPeter Moens

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Arno StockmanE. CanatoA. TajalliM. MeneghiniG. MeneghessoE. ZanoniP. MoensBenoit Bakeroot

2017

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on

Arno StockmanMichael UrenAlaleh TajalliMatteo MeneghiniBenoit BakerootPeter Moens

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

M. MeneghiniA. TajalliP. MoensA. BanereeArno StockmanM. TackS. GerardinM. BagatinA. PaccagnellaE. Zanoni et al.