The primary goal of this research project is to improve the understanding of the electrochemical nucleation and growth processes necessary for successful electrodeposition of copper onto diffusion barrier layers (TiN or TaN, for example). The mechanism of nucleation and growth of copper from different plating solutions is studied using electrocemical techniques such as cuclic voltammetry; chronoamperometry, and rotating disc electrode techniques. Deposited films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), and other appropriate surface characterization techniques. Using the results from these experiments we will optimize procedures for electrodeposition of continuous, high quality copper films on different substrates.