Project

Fundamental study of atomic layer deposition for contact- and interconnect applications in nanoelectronics.

Duration
01 January 2009 → 31 October 2011
Funding
Regional and community funding: Special Research Fund
Research disciplines
  • Natural sciences
    • Condensed matter physics and nanophysics
Keywords
Atomic Layer Deposition (ALD) silicide diffusion barrier coating
 
Project description

Atomic layer deposition (ALD) is a self-limited film growth technique, where the growing film is alternatingly exposed to pulses of precursos gases. The most important advantages of ALD concern the conformal growth and the excellent control of layer thickness, stoechiometry and uniformity. During this project, we will investigate ALD processes for the growth of diffusion barriers and contacting materials for application in nanoelectronics.