Recently, solution processable and low-cost semiconductors in the form of inorganic colloidal quantum dots (QDs) have revolutionized short wave infrared (SWIR, (1.5-2.5 µm) opto-electronic technology, in particular photo-detectors. However, these implementations often use EU-restricted materials like lead, cadmium, or mercury, hindering large-scale deployment and cast doubt on the long-term feasibility of SWIR tech relying on QDs. In contrast, non-restricted semiconductors such as InAs and InSb QDs show huge promise, with tunable band gaps across the entire SWIR spectrum. Yet, research on InAs and InSb QDs with SWIR transitions lags behind today due to a lack of well-controlled synthesis methods, including size increase and shelling procedures, and a limited understanding of their charge carrier dynamics dictating ao. electrical transport. This project aims to unlock the potential of InAs and InSb QDs for practical SWIR photodetectors by resolving the fundamental scientific roadblocks at the level of materials chemistry and photo-physics. The first objective is to develop a synthesis method to obtain monodisperse InAs and InSb QDs with absorption edges in the SWIR spectrum. The second objective is to improve surface passivation and explore their connection to charge carrier dynamics and (short-range) transport using ultrafast spectroscopy. These fundamental results lay the foundation for realizing practical non-restricted SWIR QD-photodetectors in the near future.