Thermal Atomic Layer Deposition (ALD) system for depositing uniform, pinhole-free thin films (2–100 nm) of oxides, nitrides, sulfides, and metals. Utilizes sequential precursor exposure with nitrogen purging. Equipped with a heated chamber, 4 precursor lines, ozone generator, and vacuum pump. Supports up to 10 × 8-inch wafers. Commonly used with AlOx and HfOx precursors to create bidirectional barrier layers for hermetic encapsulation of implantable electronic micro-devices.