The high end ICPECVD system SI 500 D provides exceptional performance for plasma based deposition processes. High quality dielectric and Si films are deposited using high density PECVD generated with the PTSA ICP plasma source. The planar triple spiral antenna (PTSA) ensures excellent properties of the deposited films, such as low etching rates, low stress and low interface state density at very low deposition temperatures (≤ 100 °C).