Research Explorer

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Researcher

Wim Van Der Stricht

Awards & Distinctions

32 Results

2001

The dependence of the optical energies on InGaN composition.

KP O'DONNELLRW MARTINC TRAGER-COWANME WHITEK ESONAC DEATCHERPG MIDDLETONKoen JacobsWim Van Der StrichtC MERLET et al.

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

2000

Elastic strain in InGaN and AlGaN layers

MF WuSD YaoA VantommeS HoggG LangoucheWim Van Der StrichtKoen JacobsIngrid MoermanJ LiGY Zhang

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

1999

Confocal microscopy and spectroscopy of InGaN epilayers on sapphire.

KP O'DONNELLMJ TOBINSC BAYLISSWim Van Der Stricht

A1 Journal Article in JOURNAL OF MICROSCOPY-OXFORD

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.

N DUXBURYP DAWSONU BANGERTEJ THRUSHWim Van Der StrichtKoen JacobsIngrid Moerman

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.

MF WUA VANTOMMESM HOGGG LANGOUCHEWim Van Der StrichtKoen JacobsIngrid Moerman

A1 Journal Article in APPLIED PHYSICS LETTERS

Exciton localization and the Stokes' shift in InGaN epilayers.

RW MARTINPG MIDDLETONKP O'DONNELLWim Van Der Stricht

A1 Journal Article in APPLIED PHYSICS LETTERS

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD.

JJ HARRISKJ LEEI HARRISONLB FLANNERYD KORAKAKIST CHENGCT FOXONZahia BougriouaIngrid MoermanWim Van Der Stricht et al.

Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.

JJ HARRISKJ LEEI HARRISONLB FLANNERYD KORAKAKISTS CHENGCT FOXONZahia BougriouaIngrid MoermanWim Van Der Stricht et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Intrinsic infrared luminescence from InGaN epilayers.

KP O'DONNELLRW MARTINS PEREIRAA BANGURAME WHITEWim Van Der StrichtKoen Jacobs

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Intrinsic infrared luminescence from InGaN layers.

KP O'DONNELLRW MARTINS PEREIRAA BANGURAME WHITEWim Van Der StrichtKoen Jacobs

Lateral epitaxial overgrowth for GaN-based LEDs

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterEJ THRUSH

OMVPE-based epitaxial lateral overgrowth for GaN LEDs.

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterJ DE NAEYERSteven VerstuyftPeter Van Daele

Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.

KP O'DONNELLME WHITES PEREIRAMF WUA VANTOMMEWim Van Der StrichtKoen Jacobs

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.

KP O'DONNELLME WHITES PEREIRAMF WUA VANTOMMEWim Van Der StrichtKoen Jacobs

Probing nitride thin films in 3-dimensions using a variable energy electron beam

C Trager-CowanJF TreguerS GrimsonI OsborneM BarisonziPG MiddletonSK Manson-SmithA MohammedKP O'DonnellWim Van Der Stricht et al.

The optical and structural properties of InGaN epilayers with very high indium content.

SC BAYLISSPiet DemeesterI FLETCHERRW MARTINPG MIDDLETONIngrid MoermanKP O'DONNELLA SAPELKINC TRAGER-COWANWim Van Der Stricht et al.

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Violet-blue InGaN/GaN MQW light emitting diodes on epitaxially laterally overgrown GaN.

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterSteven VerstuyftJ DE NAEYERPeter Van Daele

1998

Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy.

P RUTERANAG NOUETWim Van Der StrichtIngrid MoermanL CONSIDINE

A1 Journal Article in APPLIED PHYSICS LETTERS

Epitaxial lateral overgrowth of GaN by OMVPE.

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterSteven VerstuyftK CAEKEBEKEPeter Van DaeleL CONSIDINEEJ THRUSH

InGaN/GaN MQW blue light emitting diodes grown by OMVPE.

Wim Van Der StrichtKoen JacobsK CAEKEBEKESteven VerstuyftIngrid MoermanPeter Van DaelePiet DemeesterL CONSIDINEEJ TRUSH

Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.

C TRAGER-COWANPG MIDDLETONA MOHAMMEDKP O'DONNELLWim Van Der StrichtIngrid MoermanPiet Demeester

1997

Getter stabilized zeolite materials for specialty GAS purification

G VERGANIM SUCCIEJ THRUSHJA CRAWLEYWim Van Der StrichtP TORRESU KROLL

High Indium content InGaN films and quantum wells

Wim Van Der StrichtKoen JacobsIngrid MoermanPiet DemeesterL CONSIDINEEJ THRUSHJA CRAWLEYP RUTERANA

MOVPE growth and characterization of high quality InGaN films

Wim Van Der StrichtIngrid MoermanPiet DemeesterEJ THRUSHJA CRAWLEY

MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells

Wim Van Der StrichtIngrid MoermanPiet DemeesterEJ THRUSHJA CRAWLEY

MOVPE growth optimization of high quality InGaN films

Wim Van Der StrichtIngrid MoermanPiet DemeesterL CONSIDINEEJ THRUSHJA CRAWLEY

A2 Journal Article in Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France

Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

Wim Van Der StrichtIngrid MoermanPiet DemeesterJA CrawleyEJ Thrush

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

1996

Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices

Wim Van Der StrichtIngrid MoermanPiet DemeesterJA CRAWLEYEJ THRUSH

Study of GaN films by metalorganic chemical vapour deposition

Wim Van Der StrichtIngrid MoermanPiet DemeesterJA CRAWLEYEJ THRUSH

1995

The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

Wim Van Der StrichtIngrid MoermanPiet DemeesterJA CrawleyEJ ThrushPG MiddletonC Trager CowanKP O'Donnell

Accelerated aging of InGaN/GaN LED by electrical stressing

Koen JacobsJan CheynsWim Van Der StrichtIngrid MoermanI HARRISON

Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD

N DUXBURYP DAWSONU BANGERTEJ THRUSHWim Van Der StrichtKoen JacobsIngrid Moerman