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Researcher
Walter Gonçalez Filho
Profile
Projects
Publications
Activities
Awards & Distinctions
5
Results
2024
Electrical Stability of MOS Structures With AlON and Al<sub>2</sub>O<sub>3</sub> Dielectrics Deposited on n-and p-Type GaN
Walter Gonçalez Filho
Matteo Borga
Karen Geens
Md Arif Khan
Deepthi Cingu
Urmimala Chatterjee
Stefaan Decoutere
Werner Knaepen
Seda Kizir
Panagiota Arnou
et al.
U
Journal Article
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2024
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Walter Gonçalez Filho
Matteo Borga
Karen Geens
Md Arif Khan
Deepthi Cingu
Urmimala Chatterjee
Anurag Vohra
Stefaan Decoutere
Benoit Bakeroot
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2024
2023
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Walter Gonçalez Filho
Matteo Borga
Karen Geens
Deepthi Cingu
Urmimala Chatterjee
Sourish Banerjee
Anurag Vohra
Han Han
Albert Minj
Herwig Hahn
et al.
A1
Journal Article
in
SCIENTIFIC REPORTS
2023
High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps
D. Favero
A. Cavaliere
C. De Santi
M. Borga
Walter Gonçalez Filho
K. Geens
Benoit Bakeroot
S. Decoutere
G. Meneghesso
E. Zanoni
et al.
P1
Conference
2023
2022
Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates
Matteo Borga
Walter Gonçalez Filho
Karen Geens
Benoit Bakeroot
Hu Liang
Stefaan Decoutere
U
Conference
2022