Research Explorer

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Researcher

Stefaan Forment

Awards & Distinctions

13 Results

2007

Lifetime and leakage current considerations in metal-doped germanium

E SIMOENC CLAEYSS SIONCKEJ VAN STEENBERGENM MEURISStefaan FormentJan VanhellemontPaul ClauwsAntoon Theuwis

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

2006

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMERE SIMOENC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A deep-level transient spectroscopy study of transition metals in n-type germanium

Stefaan FormentJan VanhellemontPaul ClauwsJ VAN STEENBERGENS SIONCKEM MEURISE SIMOENAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Point-defect generation in Ni-,Pd-, and Pt-germanided Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

M BIBERO GULLUStefaan FormentRoland VanmeirhaegheA TURUT

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

2005

Een fundamentele studie van inhomogeniteiten en dipooleffecten bij metaal/halfgeleidercontacten

Stefaan FormentRoland Vanmeirhaeghe

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Wouter LeroyKarl OPSOMERStefaan FormentRoland Vanmeirhaeghe

A1 Journal Article in SOLID-STATE ELECTRONICS

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

GP RURoland VanmeirhaegheStefaan FormentYL JIANGXP QUSY ZHUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

2004

Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts

SY ZHURoland VanmeirhaegheStefaan FormentGP RUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes

Stefaan FormentM BIBERRoland VanmeirhaegheWouter LeroyA TURUT

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Schottky barrier characteristics of ternary silicide Co1-xNixSi2 on n-Si(100) contacts formed by solid phase reaction of multilayer

SY ZHURoland VanmeirhaegheStefaan FormentGP RUXP QUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

2001

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).

Stefaan FormentRoland VanmeirhaegheAn De VriezeKatrien StrubbeWalter Gomes

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY