Research Explorer

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Researcher

Roger Loo

Awards & Distinctions

33 Results

2025

3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation

M. BeggiatoRoger LooW. SunA. MoussaG. BastK. FukayaD. CerbuN. JanardanK. ChirkoT. Sipőcz et al.

3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation

Matteo BeggiatoRoger LooSun WeiAlain MoussaGerhard BastKaoru FukayaDorin CerbuNachiketa JanardanKonstantin ChirkoHan Han et al.

64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Ahmed KandeelGaspard HiblotClement PorretSrinivasan Ashwyn SrinivasanYosuke ShimuraRoger LooMathias BercianoChih-Kuo Neil TsengDharmander MalikAlexey Milenin et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Bert PolleflietClement PorretOlivier RichardJean-Luc EveraertRoger LooChristophe DetavernierAndré VantommeClement Merckling

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger LooA. AkulaY. ShimuraC. PorretE. RosseelT. DursapA. Y. HikavyyM. BeggiatoJ. BogdanowiczA. Merkulov et al.

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

In situ p-type doping in epitaxial Si1-xGex for advanced MOSFET devices

Gianluca RengoAndré VantommeRoger Loo

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Thomas KochClement GodfrinViktor AdamJulian FerreroDaniel SchrollerNoah GlaeserStefan KubicekRuoyu LiRoger LooShana Massar et al.

A1 Journal Article in NPJ QUANTUM INFORMATION

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

Janusz BogdanowiczAndrea MingardiVincent BrissonneauRoger LooYosuke ShimuraAnjani AkulaPallavi P. GowdaDaisy ZhouNaoto HoriguchiSerge Biesemans et al.

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

J. BogdanowiczA. MingardiV. BrissonneauRoger LooY. ShimuraA. AkulaP. P. GowdaD. ZhouN. HoriguchiS. Biesemans et al.

Precise optical characterization of SiGe thin films for next generation transistor metrology

Samira NaghdiRichard CiesielskiRoger LooJanusz BogdanowiczVictor Soltwisch

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

I. FattalJ. Van DammeB. RaesC. GodfrinG. JalielK. ChenT. Van CaekenbergheA. LoendersS. KubicekS. Massar et al.

SiGe:B Source/Drain epitaxy for advanced device applications

T. DursapC. PorretE. RosseelA. AkulaA. PondiniH. MertensJ. GangulyR. SarkarN. HoriguchiR. Langer et al.

Source/drain and silicides for nanosheet device applications

Clement PorretThomas DursapBert PolleflietAlex MerkulovRoger Loo

2024

Complementary Field-Effect Transistors (CFET): Metrology Challenges and Solutions

J. BogdanowiczA.-L. CharleyM. SaibM. BeggiatoG. LorussoV. BrissonneauE. DupuyRoger LooY. ShimuraA. Akula et al.

Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke ShimuraClement GodfrinAndriy HikavyyRoy LiJuan AguileraGeorgios KatsarosPaola FaviaHan HanDanny WanKristiaan De Greve et al.

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert PolleflietClement PorretJean-Luc EveraertKiroubanand SankaranXiaoyu PiaoErik RosseelThierry ConardAndrea ImpagnatielloYosuke ShimuraNaoto Horiguchi et al.

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

DLTS assessment of grown-in defects in hetero-epitaxial gate stacks for stacked silicon nanosheet channels

Eddy SimoenSamira KhelifiHenk VrielinckA. AkulaRoger Loo

Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications

Matteo BeggiatoDorin CerbuRoger LooWei SunAlain MoussaGerhard BastKaoru FukayaChristophe BeralAnne-Laure CharleyNachiketa Janardan et al.

Effects of strain on diborane dissociative adsorption and boron incorporation on Si0.5Ge0.5(001)-2×1 surfaces

Gianluca RengoGeoffrey PourtoisClement PorretRoger LooAndré Vantomme

A1 Journal Article in JOURNAL OF PHYSICAL CHEMISTRY C

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger LooAnjani AkulaYosuke ShimuraClement PorretErik RosseelThomas DursapAndriy Yakovitch HikavyyMatteo BeggiatoJanusz BogdanowiczAlex Merkulov et al.

A2 Journal Article in ECS TRANSACTIONS

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger LooClement PorretErik RosseelAnjani AkulaYosuke ShimuraThomas DursapAndriy HikavyyHans MertensNaoto HoriguchiRobert Langer

Extreme silicon thinning for back side power delivery network : Si thinning stopping on scaled SiGe etch stop layer

Farid SebaaiRoger LooAnne JourdainEric BeyneHikaru KawarazakiTeppei NakanoEfrain Altamirano Sanchez

A1 Journal Article in MICROELECTRONIC ENGINEERING

Ge-on-insulator fabrication based on Ge-on-nothing technology

Keisuke YamamotoDong WangRoger LooClément PorretJinyoun ChoKristof DesseinValérie Depauw

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Thomas KochClement GodfrinViktor AdamJulian FerreroDaniel SchrollerNoah GlaeserStefan KubicekRuoyu LiRoger LooShana Massar et al.

Interface sharpness in stacked thin film structures : a comparison of soft X-ray reflectometry and transmission electron microscopy

Richard CiesielskiJanusz BogdanowiczRoger LooYosuke ShimuraAntonio ManiChristoph MitterbauerMichael KolbeVictor Soltwisch

A1 Journal Article in JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Yuta FujimotoAndriy HikavyyClement PorretErik RosseelGianluca RengoRoger Loo

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Overview of engineered germanium substrate development for affordable large-volume multijunction solar cells

Jinyoun ChoValérie DepauwAlexandre ChapototWaldemar SchreiberTadeáš HanušNicolas PaupyValentin DanielGuillaume CourtoisBouraoui IlahiAbderraouf Boucherif et al.

A1 Journal Article in IEEE JOURNAL OF PHOTOVOLTAICS

Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures

Richard CiesielskiRoger LooYosuke ShimuraJanusz BogdanowiczAntonio ManiChristoph MitterbauerVinh-Binh TruongMichael KolbeVictor Soltwisch

Source/drain epitaxy for nanosheet-based CFET devices

Erik RosseelClement PorretThomas DursapRoger LooHans MertensJishnu GangulyRitam SarkarCamila CavalcanteOlivier RichardJef Geypen et al.

A2 Journal Article in ECS TRANSACTIONS

Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks

Bert PolleflietClement PorretChristophe DetavernierJean-Luc EveraertKiroubanand SankaranErik RosseelRoger LooAndré VantommeClement Merckling

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Yuji YamamotoWei-Chen WenMarkus Andreas SchubertAgnieszka Anna Corley-WiciakSho SugawaYuta ItoRyo YokogawaHan HanRoger LooAtsushi Ogura et al.

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

2023

Epitaxial SiGe/Si multi-stacks for complementary FET devices

Roger LooAnjani AkulaClement PorretDong WangKeisuke YamamotoTamás SipőczÁrpád KerekesAlex MerkulovMustafa AyyadHan Han et al.

Lateral selective epitaxial SiGe growth for locally dislocation-free virtual substrate fabrication

Yuji YamamotoWei-Chen WenMarkus Andreas SchubertAgnieszka Anna Corley-WiciakSho SugawaYuta ItoRyo YokogawaHan HanRoger LooAtsushi Ogura et al.