Research Explorer

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Researcher

Roger Loo

Awards & Distinctions

18 Results

2024

64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Ahmed KandeelGaspard HiblotClement PorretSrinivasan Ashwyn SrinivasanYosuke ShimuraRoger LooMathias BercianoChih-Kuo Neil TsengDharmander MalikAlexey Milenin et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke ShimuraClement GodfrinAndriy HikavyyRoy LiJuan AguileraGeorgios KatsarosPaola FaviaHan HanDanny WanKristiaan De Greve et al.

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert PolleflietClement PorretJean-Luc EveraertKiroubanand SankaranXiaoyu PiaoErik RosseelThierry ConardAndrea ImpagnatielloYosuke ShimuraNaoto Horiguchi et al.

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications

Matteo BeggiatoDorin CerbuRoger LooWei SunAlain MoussaGerhard BastKaoru FukayaChristophe BeralAnne-Laure CharleyNachiketa Janardan et al.

Effects of strain on diborane dissociative adsorption and boron incorporation on Si0.5Ge0.5(001)-2×1 surfaces

Gianluca RengoGeoffrey PourtoisClement PorretRoger LooAndré Vantomme

A1 Journal Article in JOURNAL OF PHYSICAL CHEMISTRY C

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger LooAnjani AkulaYosuke ShimuraClement PorretErik RosseelThomas DursapAndriy Yakovitch HikavyyMatteo BeggiatoJanusz BogdanowiczAlex Merkulov et al.

A2 Journal Article in ECS TRANSACTIONS

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger LooClement PorretErik RosseelAnjani AkulaYosuke ShimuraThomas DursapAndriy HikavyyHans MertensNaoto HoriguchiRobert Langer

Extreme silicon thinning for back side power delivery network : Si thinning stopping on scaled SiGe etch stop layer

Farid SebaaiRoger LooAnne JourdainEric BeyneHikaru KawarazakiTeppei NakanoEfrain Altamirano Sanchez

A1 Journal Article in MICROELECTRONIC ENGINEERING

Ge-on-insulator fabrication based on Ge-on-nothing technology

Keisuke YamamotoDong WangRoger LooClément PorretJinyoun ChoKristof DesseinValérie Depauw

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Thomas KochClement GodfrinViktor AdamJulian FerreroDaniel SchrollerNoah GlaeserStefan KubicekRuoyu LiRoger LooShana Massar et al.

Interface sharpness in stacked thin film structures : a comparison of soft X-ray reflectometry and transmission electron microscopy

Richard CiesielskiJanusz BogdanowiczRoger LooYosuke ShimuraAntonio ManiChristoph MitterbauerMichael KolbeVictor Soltwisch

A1 Journal Article in JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Yuta FujimotoAndriy HikavyyClement PorretErik RosseelGianluca RengoRoger Loo

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Overview of engineered germanium substrate development for affordable large-volume multijunction solar cells

Jinyoun ChoValérie DepauwAlexandre ChapototWaldemar SchreiberTadeáš HanušNicolas PaupyValentin DanielGuillaume CourtoisBouraoui IlahiAbderraouf Boucherif et al.

A1 Journal Article in IEEE JOURNAL OF PHOTOVOLTAICS

Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures

Richard CiesielskiRoger LooYosuke ShimuraJanusz BogdanowiczAntonio ManiChristoph MitterbauerVinh-Binh TruongMichael KolbeVictor Soltwisch

Source/drain epitaxy for nanosheet-based CFET devices

Erik RosseelClement PorretThomas DursapRoger LooHans MertensJishnu GangulyRitam SarkarCamila CavalcanteOlivier RichardJef Geypen et al.

A2 Journal Article in ECS TRANSACTIONS

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Yuji YamamotoWei-Chen WenMarkus Andreas SchubertAgnieszka Anna Corley-WiciakSho SugawaYuta ItoRyo YokogawaHan HanRoger LooAtsushi Ogura et al.

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

2023

Epitaxial SiGe/Si multi-stacks for complementary FET devices

Roger LooAnjani AkulaClement PorretDong WangKeisuke YamamotoTamás SipőczÁrpád KerekesAlex MerkulovMustafa AyyadHan Han et al.

Lateral selective epitaxial SiGe growth for locally dislocation-free virtual substrate fabrication

Yuji YamamotoWei-Chen WenMarkus Andreas SchubertAgnieszka Anna Corley-WiciakSho SugawaYuta ItoRyo YokogawaHan HanRoger LooAtsushi Ogura et al.