Research Explorer

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Researcher

Roger Loo

Publications & Research Data

Awards & Distinctions

65 Results

2026

Concatenated continuous driving of silicon qubit by amplitude and phase modulation

Takuma KunoTakeru UtsugiAndrew J. RamsayNormann MertigNoriyuki LeeItaru YanagiToshiyuki MineNobuhiro KusunoHideo ArimotoSofie Beyne et al.

A1 Journal Article in PHYSICAL REVIEW B

2025

110 GHz GeSi electroabsorption modulator on a 300mm SiPh platform enabling high-density 400G/lane IM/DD links

Cédric BruynsteenZohauddin AhmadLeandro Da SilvaMinkyu KimConor CoughlanDharmander MalikMathias BercianoGuy LepageRoger LooHakim Kobbi et al.

300 mm production compatible fabrication of quantum computing devices

Stefan KubicekS. BeyneS. SharmaS. MassarC. GodfrinB. RaesA. LoendersJ. JussotY. HermansY. Li et al.

300mm All silicon gate-stack for Si/SiGe spin qubit

Clément GodfrinArne LoendersYosuke ShimuraRoger LooBart RaesGulzat JulielSugandha SharmaStefan KubicekSofie BeyneMassimo Mongillo et al.

300mm fabrication of silicon quantum dot spin qubits using 0.33NA EUV lithography

S. BeyneS. KubicekC. GodfrinB. RaesT. Van CaekenbergheJ. De BackerY. HermansF. TreskaS. KaushikY. Jiang et al.

320 Gb/s unamplified transmission using 100 GHz Ge PD and TFLN MZM on a foundry-compatible SiPh platform co-packaged with traveling-wave drivers and TIAs

Jakob DeclercqShengpu NiuMargot NielsJoris Van KerrebrouckMaximilien BilletM. BercianoJoris LambrechtBart MoeneclaeyTom VanackereEwoud Vissers et al.

3D-DRAM Si/SiGe superlattices : inspection strategies and evaluation

Matteo BeggiatoRoger LooSun WeiAlain MoussaGerhard BastKaoru FukayaDorin CerbuNachiketa JanardanKonstantin ChirkoHan Han et al.

64 Gb/s O-band GeSi quantum-confined stark effect electro-absorption modulators integrated in a 300mm silicon photonics platform

Ahmed KandeelGaspard HiblotClement PorretSrinivasan Ashwyn SrinivasanYosuke ShimuraRoger LooMathias BercianoChih-Kuo Neil TsengDharmander MalikAlexey Milenin et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

70 GHz, 2 A/W, waveguide-coupled germanium-in-silicon avalanche photodiode

Amir Khaled Abdelhamid Mohamed ShahinConor CoughlanMathias BercianoDidit YudistiraShuchi KaushikRoger LooHakim KobbiPatrick CarolanMarta AgatiDries Van Thourhout et al.

A novel beam-tilt technique in transmission electron microscopy (TEM) : application for semiconductor use cases

Chu-Ping YuChen LiChunhua (Emma) TangDominique DelilleAidan Arthur TaylorPaola FaviaOlivier RichardRoger Loo

Analysis of the Sc silicide formation mechanisms by medium-energy ion scattering

André VantommeRadek HolenakKevin VomscheeEleni NtemouTuan TranBert PolleflietClement PorretRoger LooClement MercklingDaniel Primetzhofer

Beyond 100 GHz, high responsivity, waveguide-coupled deeply recessed germanium on silicon photodiode

Amir Khaled Abdelhamid Mohamed ShahinMathias BercianoConor CoughlanDidit YudistiraShuchi KaushikRoger LooHakim KobbiMinkyu KimPatrick CarolanMarta Agati et al.

Crystallographic defects in orthorhombic ScSi / Si(001) contacts

Bert PolleflietClement PorretOlivier RichardJean-Luc EveraertRoger LooChristophe DetavernierAndré VantommeClement Merckling

Defect-centric modeling of capacitance-voltage characteristics of SiGe/Si/SiGe heterostructures at cryogenic temperatures

B. VeryserF. StampflJ.M. Gonzalez-MedinaC. GodfrinB. RaesK. De GreveRoger LooY. ShimuraL. PanarellaA. Grill et al.

Design of a high-speed waveguide Ge/Si SACM avalanche photodiode

Amir Khaled Abdelhamid Mohamed ShahinMathias BercianoConor CoughlanDidit YudistiraRoger LooAhmed KandeelPeter VerheyenHakim KobbiMaumita ChakrabartiDries Van Thourhout et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

Effect of traps in Si/SiGe NPN selectors for cross-point memory array architecture

Sandipta RoyTaras RavsherBhuvaneshwari Yengula Venkata RamanaLoris Angelo LabbateAndrea FantiniRoger LooNathali A. Franchina VergelPraveen DaraClément PorretNico Jossart et al.

A1 Journal Article in IEEE TRANSACTIONS ON ELECTRON DEVICES

Eight-qubit operation of a 300 mm SiMOS foundry-fabricated device

Andreas NicklNard Dumoulin StuyckPaul SteinackerJesus D. CifuentesSantiago SerranoMengKe FengEnsar VahapogluFay E. HudsonKok Wai ChanStefan Kubicek et al.

Epitaxial growth of Si/SiGe and Ge/SiGe stacks using isotopically purified 28SiH4 and 73Ge-depleted GeH4 for spin qubit

Y. ShimuraRoger LooC. GodfrinS. KubicekD. WanK. De Greve

Epitaxial growth of strain relaxed SiGe layers with GeCl4

Yosuke ShimuraClement PorretDanny WanKristiaan De GreveRoger Loo

Epitaxial growth of up to 120x {Si0.8Ge0.2 / Si} bilayers in view of 3D DRAM applications

Roger LooM. BeggiatoY. ShimuraN. RassoulW. VanherleF. SeidelK. PaulussenJ. BogdanowiczA. MerkulovM. Ayyad et al.

Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications

Roger LooM. BeggiatoY. ShimuraN. RassoulW. VanherleF. SeidelK. PaulussenA. MerkulovM. AyyadI. Lee et al.

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger LooA. AkulaY. ShimuraC. PorretE. RosseelT. DursapA. Y. HikavyyM. BeggiatoJ. BogdanowiczA. Merkulov et al.

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Exploration and insights into vertical nanowire/sheet FETs for ultimate scaled circuits/systems

Anabela VelosoBjorn VermeerschAbderrahim TahiatPhilippe MatagneAdrian ChasinBarry O'SullivanRuben AsanovskiBogdan CretuEddy SimoenRoger Loo et al.

First systematic characterization of floating body effects in GAA nanosheet 3D DRAM access transistors

D. GarbinG. EnemanR. RitzenthalerN. RassoulP. EybenE. CangaD. MatsubayashiA. FantiniB. O’SullivanL. A. Labbate et al.

Ge epitaxy on Si (001) using halide-based chemical vapor deposition

Ambrishkumar J. DevaiyaOmar ConcepciónClement PorretDaniel McDermottAndreas T. TiedemannJinyoun ChoKristof DessinSanjay MathurDetlev GrützmacherDan Buca et al.

Growth and stability of Pt germanides on Ge and GeSn substrates

G. MagchielsDavy DeduytscheL. KotsediRoger LooC. B. MtshaliI. K. SegolaN. SpettelK. van StiphoutA. VohraChristophe Detavernier et al.

A1 Journal Article in ACTA MATERIALIA

High fidelity qubit control in a natural Si-MOS quantum dot using a 300 mm silicon on insulator wafer

Xander PeetroonsXunyao LuoTsung-Yeh YangNormann MertigSofie BeyneJulien JussotYosuke ShimuraClement GodfrinBart RaesRuoyu Li et al.

Hybrid quantum systems : coupling single-molecule magnet qudits with industrial silicon spin qubits

Daniel SchrollerDaniel SitterThomas KochViktor AdamNoah GlaeserClement GodfrinStefan KubicekJulien JussotRoger LooYosuke Shimura et al.

In situ p-type doping in epitaxial Si1-xGex for advanced MOSFET devices

Gianluca RengoAndré VantommeRoger Loo

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Thomas KochClement GodfrinViktor AdamJulian FerreroDaniel SchrollerNoah GlaeserStefan KubicekRuoyu LiRoger LooShana Massar et al.

A1 Journal Article in NPJ QUANTUM INFORMATION

Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity

Paul SteinackerNard Dumoulin StuyckWee Han LimTuomo TanttuMengKe FengSantiago SerranoAndreas NicklMarco CandidoJesus D. CifuentesEnsar Vahapoglu et al.

A1 Journal Article in NATURE

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

Janusz BogdanowiczAndrea MingardiVincent BrissonneauRoger LooYosuke ShimuraAnjani AkulaPallavi P. GowdaDaisy ZhouNaoto HoriguchiSerge Biesemans et al.

Inline X-ray metrology for complementary field-effect transistors (CFET)

J. BogdanowiczA. MingardiV. BrissonneauRoger LooY. ShimuraA. AkulaP. P. GowdaD. ZhouN. HoriguchiS. Biesemans et al.

JST / ASPIRE project versatile quantum engineering of group-IV alloy materials for semiconductor heterogeneous integrated devices : Imec’s involvement

Roger LooY. ShimuraH. KuwazuruK. YamamotoD. WangC. PorretT. DursapA. AkulaD. SchippersO. Nakatsuka et al.

Low temperature SiGe:B source/drain epitaxy for CFET applications

Thomas DursapClement PorretAlex MerkulovPaola FaviaRobert LangerMin-Soo KimNaoto HoriguchiRoger Loo

Low temperature SiGe:B source/drain epitaxy for CFET applications

T. DursapC. PorretA. MerkulovP. FaviaR. LangerM.-S. KimN. HiroguchiRoger Loo

Precise optical characterization of SiGe thin films for next generation transistor metrology

Samira NaghdiRichard CiesielskiRoger LooJanusz BogdanowiczVictor SoltwischFrank Scholze

Precise optical characterization of SiGe thin films for next generation transistor metrology

Samira NaghdiRichard CiesielskiRoger LooJanusz BogdanowiczVictor Soltwisch

Process insights into 3D-DRAM with vertical bit line and scalable GAA transistor

N. RassoulL. A. LabbateG. EnemanA. FantiniR. RitzenthalerJ. Loyo PradoRoger LooWouter DevulderE. DupuyT. Peissker et al.

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

I. FattalJ. Van DammeB. RaesC. GodfrinG. JalielK. ChenT. Van CaekenbergheA. LoendersS. KubicekS. Massar et al.

Rapid autotuning of a SiGe quantum dot into the single-electron regime with machine learning and RF-reflectometry FPGA-based measurements

Marc-Antoine RouxJoffrey RivardVictor YonAlexis MorelDominic LeclercClaude RohrbacherEl Bachir NdiayeFelice Francesco TafuriBrendan BonoStefan Kubicek et al.

SiGe:B Source/Drain epitaxy for advanced device applications

T. DursapC. PorretE. RosseelA. AkulaA. PondiniH. MertensJ. GangulyR. SarkarN. HoriguchiR. Langer et al.

Source/drain and silicides for nanosheet device applications

Clement PorretThomas DursapBert PolleflietAlex MerkulovRoger Loo

Source/drain epitaxy and contact silicides for CFET applications

Clement PorretThomas DursapAnjani AkulaErik RosseelBert PolleflietJean-Luc EveraertKiroubanand SankaranAlex MerkulovOlivier RichardPaola Favia et al.

Source/drain epitaxy and contacts for CFET applications

Clement PorretThomas DursapAnjani AkulaErik RosseelBert PolleflietJean-Luc EveraertKiroubanand SankaranAlex MerkulovKeisuke YamamotoPaola Favia et al.

2024

Complementary Field-Effect Transistors (CFET) : metrology challenges and solutions

J. BogdanowiczA.-L. CharleyM. SaibM. BeggiatoG. LorussoV. BrissonneauE. DupuyRoger LooY. ShimuraA. Akula et al.

Compressively strained epitaxial Ge layers for quantum computing applications

Yosuke ShimuraClement GodfrinAndriy HikavyyRoy LiJuan AguileraGeorgios KatsarosPaola FaviaHan HanDanny WanKristiaan De Greve et al.

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Crystallinity and composition of Sc1-x(-y)Si x(P y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Bert PolleflietClement PorretJean-Luc EveraertKiroubanand SankaranXiaoyu PiaoErik RosseelThierry ConardAndrea ImpagnatielloYosuke ShimuraNaoto Horiguchi et al.

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications

Matteo BeggiatoDorin CerbuRoger LooWei SunAlain MoussaGerhard BastKaoru FukayaChristophe BeralAnne-Laure CharleyNachiketa Janardan et al.

DLTS assessment of grown-in defects in hetero-epitaxial gate stacks for stacked silicon nanosheet channels

Eddy SimoenSamira KhelifiHenk VrielinckA. AkulaRoger Loo

Effects of strain on diborane dissociative adsorption and boron incorporation on Si0.5Ge0.5(001)-2×1 surfaces

Gianluca RengoGeoffrey PourtoisClement PorretRoger LooAndré Vantomme

A1 Journal Article in JOURNAL OF PHYSICAL CHEMISTRY C

Epitaxial Si/SiGe multi-stacks : from stacked nano-sheet to fork-sheet and CFET devices

Roger LooAnjani AkulaYosuke ShimuraClement PorretErik RosseelThomas DursapAndriy Yakovitch HikavyyMatteo BeggiatoJanusz BogdanowiczAlex Merkulov et al.

A2 Journal Article in ECS TRANSACTIONS

Epitaxial SiGe/Si multi-stacks : stacked nano-sheet to fork-sheet and CFET devices

Roger LooClement PorretErik RosseelAnjani AkulaYosuke ShimuraThomas DursapAndriy HikavyyHans MertensNaoto HoriguchiRobert Langer

Extreme silicon thinning for back side power delivery network : Si thinning stopping on scaled SiGe etch stop layer

Farid SebaaiRoger LooAnne JourdainEric BeyneHikaru KawarazakiTeppei NakanoEfrain Altamirano Sanchez

A1 Journal Article in MICROELECTRONIC ENGINEERING

Ge-on-insulator fabrication based on Ge-on-nothing technology

Keisuke YamamotoDong WangRoger LooClément PorretJinyoun ChoKristof DesseinValérie Depauw

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium

Thomas KochClement GodfrinViktor AdamJulian FerreroDaniel SchrollerNoah GlaeserStefan KubicekRuoyu LiRoger LooShana Massar et al.

Interface sharpness in stacked thin film structures : a comparison of soft X-ray reflectometry and transmission electron microscopy

Richard CiesielskiJanusz BogdanowiczRoger LooYosuke ShimuraAntonio ManiChristoph MitterbauerMichael KolbeVictor Soltwisch

A1 Journal Article in JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

Yuta FujimotoAndriy HikavyyClement PorretErik RosseelGianluca RengoRoger Loo

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

Overview of engineered germanium substrate development for affordable large-volume multijunction solar cells

Jinyoun ChoValérie DepauwAlexandre ChapototWaldemar SchreiberTadeáš HanušNicolas PaupyValentin DanielGuillaume CourtoisBouraoui IlahiAbderraouf Boucherif et al.

A1 Journal Article in IEEE JOURNAL OF PHOTOVOLTAICS

Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures

Richard CiesielskiRoger LooYosuke ShimuraJanusz BogdanowiczAntonio ManiChristoph MitterbauerVinh-Binh TruongMichael KolbeVictor Soltwisch

Source/drain epitaxy for nanosheet-based CFET devices

Erik RosseelClement PorretThomas DursapRoger LooHans MertensJishnu GangulyRitam SarkarCamila CavalcanteOlivier RichardJef Geypen et al.

A2 Journal Article in ECS TRANSACTIONS

Texture of orthorhombic ScSi in annealed TiN / Sc / Si(:P)(001) contact stacks

Bert PolleflietClement PorretChristophe DetavernierJean-Luc EveraertKiroubanand SankaranErik RosseelRoger LooAndré VantommeClement Merckling

Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth

Yuji YamamotoWei-Chen WenMarkus Andreas SchubertAgnieszka Anna Corley-WiciakSho SugawaYuta ItoRyo YokogawaHan HanRoger LooAtsushi Ogura et al.

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS

2023

Epitaxial SiGe/Si multi-stacks for complementary FET devices

Roger LooAnjani AkulaClement PorretDong WangKeisuke YamamotoTamás SipőczÁrpád KerekesAlex MerkulovMustafa AyyadHan Han et al.

Lateral selective epitaxial SiGe growth for locally dislocation-free virtual substrate fabrication

Yuji YamamotoWei-Chen WenMarkus Andreas SchubertAgnieszka Anna Corley-WiciakSho SugawaYuta ItoRyo YokogawaHan HanRoger LooAtsushi Ogura et al.