Research Explorer

Your browser does not support JavaScript or JavaScript is not enabled. Without JavaScript some functions of this webapplication may be disabled or cause error messages. To enable JavaScript, please consult the manual of your browser or contact your system administrator.

Researcher

Olivier De Gryse

Publications & Research Data

Awards & Distinctions

19 Results

2006

Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

Olivier De GryseJan VanhellemontPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

2005

Critical precipitate size revisited and implications for oxygen precipitation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Precipitation and extended defect formation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

2004

DLTS studies of high-temperature electron irradiated Cz n-Si

V NEIMASHM KRAS'KOA KRAITCHINSKIIV VOYTOVYCHV TISHCHENKOE SIMOENJM RAFIC CLAEYSJorg VersluysOlivier De Gryse et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Extended defects in silicon: an old and new story

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

2003

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De GryseJan VanhellemontPaul ClauwsO LebedevJ Van LanduytEddy SimoenC Claeys

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEONC CLAEYSR LOOOlivier De GrysePaul ClauwsR JOBAG ULYASHINW FAHRNER

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOENC CLAEYSR JOBAG ULYASHINWR FAHRNERG TONELLIOlivier De GrysePaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2002

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Olivier De GrysePaul ClauwsJan VanhellemontO LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

Eddy SimoenC ClaeysR JobAG UlyashinWR FahrnerOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

On the nucleation of bulk stacking faults in CZ silicon

Jan VanhellemontOlivier De GrysePaul Clauws

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

Eddy SimoenR LooC ClaeysOlivier De GrysePaul ClauwsJ Van LanduytO Lebedev

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

Eddy SimoenC ClaeysR JobAG UlyashinWR FahrnerG TonelliOlivier De GrysePaul Clauws

2001

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

Olivier De GrysePaul ClauwsO LebedevJ Van LanduytJ VanhellemontC ClaeysEddy Simoen

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2000

Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon

Olivier De GrysePaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1999

Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers

Olivier De GrysePaul ClauwsL. RossouJ. Van LanduytJ. Vanhellemont

A1 Journal Article in MICROELECTRONIC ENGINEERING

Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon

Olivier De GrysePaul ClauwsL RossouJ Van LanduytJan Vanhellemont

A1 Journal Article in REVIEW OF SCIENTIFIC INSTRUMENTS

1998

Accurate infrared absorption measurement of interstitial and precipitated oxygen in heavily doped silicon

Olivier De GrysePaul ClauwsL ROSSOUJ VAN LANDUYTJan VanhellemontWilly Mondelaers