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Researcher
Mojtaba Alaei
Profile
Projects
Publications & Research Data
Activities
Awards & Distinctions
Patents
6
Results
2025
Compact modeling of gallium nitride power high-electron-mobility transistors
Mojtaba Alaei
Benoit Bakeroot
Johan Lauwaert
Dissertation
2025
Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs
Mojtaba Alaei
Herbert De Pauw
Elena Fabris
Stefaan Decoutere
Jan Doutreloigne
Johan Lauwaert
Benoit Bakeroot
A1
Journal Article
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2025
2024
Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping
Mojtaba Alaei
Matteo Borga
Elena Fabris
Stefaan Decoutere
Johan Lauwaert
Benoit Bakeroot
A1
Journal Article
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2024
Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile
Mojtaba Alaei
Matteo Borga
Elena Fabris
Stefaan Decoutere
Johan Lauwaert
Benoit Bakeroot
A1
Journal Article
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2024
2023
Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform
Mojtaba Alaei
Herbert De Pauw
Urmimala Chatterjee
Stefaan Decoutere
Johan Lauwaert
Benoit Bakeroot
C1
Conference
2023
2020
Modeling of short-channel effects in GaN HEMTs
Mojtaba Alaei
Majid Shalchian
Farzan Jazaeri
A1
Journal Article
in
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020