Research Explorer

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Researcher

Mark D'Hondt

Awards & Distinctions

33 Results

2001

5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates.

Prasanta ModakMark D'HondtIngrid MoermanPeter Van DaeleP MIJLEMANSPiet Demeester

A1 Journal Article in ELECTRONICS LETTERS

High-efficiency 650 nm thin-film light-emitting diodes.

C ROOMANR WINDISCHMark D'HondtPrasanta ModakIngrid MoermanP MIJLEMANSB DUTTAG BORGHSRoger VounckxMaarten Kuijk et al.

High-efficiency thin-film light-emitting diodes at 650 nm.

C ROOMANR WINDISCHMark D'HondtB DUTTAPrasanta ModakP MIJLEMANSG BORGHSRoger VounckxIngrid MoermanMaarten Kuijk et al.

A1 Journal Article in ELECTRONICS LETTERS

InAlGaP materials and red emitting LEDs on GaAs and Ge substrates

Prasanta ModakMark D'HondtIngrid MoermanPeter Van DaeleP MIJLEMANSPiet Demeester

MOVPE based Zn diffusion into InP and InAsP/InP hetero structures.

Koen VanhollebekeMark D'HondtIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).

Koen VanhollebekeMark D'HondtIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

2000

(Al)GaInP multiquantum well LEDs on GaAs and Ge.

Prasanta ModakMark D'HondtP MIJLEMANSIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

4mW micro cavity LED at 650nm on germanium substrates.

Mark D'HondtPrasanta ModakDanaë DelbekeIngrid MoermanPeter Van DaeleRoel BaetsPiet DemeesterPaul Mijlemans

AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.

Prasanta ModakMark D'HondtDanaë DelbekeIngrid MoermanRoel BaetsPeter Van DaelePiet DemeesterP MIJLEMANS

A1 Journal Article in IEEE PHOTONICS TECHNOLOGY LETTERS

Development of InAlGaP-materials on Ge-substrates for red light emitters, using a safe MOVPE-process

Prasanta ModakMark D'HondtIngrid Moerman

High efficiency InAlGaP microcavity LEDs on Ge-substrates

Prasanta ModakMark D'HondtDanaë DelbekeIngrid MoermanPeter Van DaeleRoel BaetsPiet DemeesterP MIJLEMANS

InAlGaP microcavity LEDs on Ge-substrates

Prasanta ModakMark D'HondtDanaë DelbekeP MijlemansIngrid MoermanRoel BaetsPeter Van DaelePiet Demeester

1999

(Al)GaInP multiquantum well LEDs on Ge and GaAs.

Prasanta ModakMark D'HondtIngrid MoermanPeter Van DaelePiet DemeesterKoen VanhollebekeP MIJLEMANS

High quality AlGaInP layers on GaAs and Ge grown by MOVPE.

Prasanta ModakJoff DerluynMark D'HondtP MIJLEMANSIngrid MoermanPiet Demeester

1998

Dark current optimisation for MOVPE grown 2.51 mu m wavelength InGaAs photodetectors.

Mark D'HondtIngrid MoermanPiet Demeester

A1 Journal Article in ELECTRONICS LETTERS

Dark current optimisation of 2.5 µm wavelength, 2% mismatched InGaAs photodetectors on InP

Mark D'HondtIngrid MoermanPiet Demeester

Germanium - The all-purpose substrate of the future?

Mark D'HondtP MIJLEMANSIngrid MoermanPiet Demeester

A2 Journal Article in Compound Semiconductor Summer II

Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes.

Mark D'HondtJoff DerluynIngrid MoermanSteven VerstuyftPeter Van DaelePiet DemeesterP MIJLEMANS

High quality InGaAs/AlGaAs lasers grown on Ge substrates.

Mark D'HondtZong-Qiang YuBart DepreterCarl SysIngrid MoermanPiet DemeesterP MIJLEMANS

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

High quality InGaAs/AlGaAs lasers grown on Ge substrates.

Mark D'HondtZong-Qiang YuBart DepreterCarl SysIngrid MoermanPiet DemeesterP MIJLEMANS

Ontwikkeling van MOVPE-gebaseerde InGaAs/InP fotodetectoren en laserdioden voor golflengten > 1.65µm

Mark D'HondtPiet DemeesterIngrid Moerman

1997

Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.

Mark D'HondtIngrid MoermanPiet Demeester

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Influence of buffer layer and processing on the dark current of 2.5 mu m-wavelength 2%-mismatched InGaAs photodetectors.

Mark D'HondtIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in IEE PROCEEDINGS-OPTOELECTRONICS

Low dark current, mismatched InO.82GaO.18As/InAsyPl-y photodetectors for 2.5um wavelength, grown on InP by MOVPE.

Mark D'HondtIngrid MoermanPeter Van DaelePiet Demeester

Study and development of extended wavelength InGaAs detectors

Ingrid MoermanMark D'Hondt

1996

Characterisation of 2 mismatched InGaAs layers, grown on different buffer- layers and at different growth temperatures

Mark D'HondtIngrid MoermanPiet Demeester

Dark current reduction for 2.5 µm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature

Mark D'HondtIngrid MoermanPiet Demeester

1995

InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique

Ingrid MoermanW VanderbauwhedeMark D'HondtPeter Van DaelePiet Demeester

Monolithic integration of a mode size converter with a laser diode using MOVPE shadow masked growth

Ingrid MoermanMark D'HondtPeter Van DaelePiet DemeesterW Hunziker

1994

III-V SEMICONDUCTOR WAVE-GUIDING DEVICES USING ADIABATIC TAPERS.

Ingrid MoermanGerrit VermeireMark D'HondtW VANDERBAUWHEDEJohan BlondelleGeert CoudenysPeter Van DaelePiet Demeester

A1 Journal Article in MICROELECTRONICS JOURNAL

Monolithic integration of a spot size transformer with a planar buried heterostructure in GaAsP/InP-laser using the shadow masked growth technique.

Ingrid MoermanMark D'HondtW VANDERBAUWHEDEGeert CoudenysJan HaesPeter De DobbelaereRoel BaetsPeter Van DaelePiet Demeester

A1 Journal Article in IEEE PHOTONICS TECHNOLOGY LETTERS

Vertically tapered InGaAsP/InP waveguides and lasers resulting in low-loss fibre-chip coupling.

Ingrid MoermanMark D'HondtW VANDERBAUWHEDEJan HaesLuc VanwassenhovePeter De DobbelaereRoel BaetsPeter Van DaelePiet Demeester

1993

Epitaxial lift-off of GaAs LEDs to coated silicon.

Mark D'HondtCatherine BrysIvan PollentierPeter De DobbelaereSteven VerstuyftPeter Van DaelePiet Demeester