Research Explorer

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Researcher

Karl Opsomer

Publications & Research Data

Awards & Distinctions

14 Results

2021

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Meiyi WuJean-Francois de MarneffeKarl OpsomerChristophe DetavernierAnnelies DelabiePhilipp NaujokOezge CanerAndy GoodyearMike CookeQais Saadeh et al.

A2 Journal Article in MICRO AND NANO ENGINEERING

2016

Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

Wouter DevulderKarl OpsomerMatthias MinjauwJohan MeersschautMalgorzata JurczakLudovic GouxChristophe Detavernier

A1 Journal Article in RSC ADVANCES

2015

Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells

Wouter DevulderKarl OpsomerJohan MeersschautDavy DeduytscheMalgorzata JurczakLudovic GouxChristophe Detavernier

A1 Journal Article in ACS COMBINATORIAL SCIENCE

Electronic properties of manganese impurities in germanium

Johan LauwaertSiegfried SegersFilip MoensKarl OpsomerPaul ClauwsFreddy CallensEddy SimoenHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying

Wouter DevulderKarl OpsomerGeert RampelbergBob De SchutterKilian Devloo-CasierMalgorzata JurczakLudovic GouxChristophe Detavernier

A1 Journal Article in JOURNAL OF MATERIALS CHEMISTRY C

Influence of alloying the copper supply layer on the retention of CBRAM

Wouter DevulderKarl OpsomerMalgorzata JurczakLudovic GouxChristophe Detavernier

2014

Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

Wouter DevulderKarl OpsomerAlexis FranquetJohan MeersschautAttilio BelmonteRobert MullerBob De SchutterSven Van ElshochtMalgorzata JurczakLudovic Goux et al.

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Mn related defect levels in germanium

Johan LauwaertFilip MoensSiegfried SegersKarl OpsomerEddy SimoenJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

2013

Conductive-AFM tomography for 3D filament observation in resistive switching devices

U CelanoL GouxA BelmonteA SchulzeKarl OpsomerChristophe DetavernierO RichardH BenderM JurczakW Vandervorst

Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells

Wouter DevulderKarl OpsomerFelix SeidelAttilio BelmonteRobert MullerBob De SchutterHugo BenderWilfried VandervorstSven Van ElshochtMalgorzata Jurczak et al.

A1 Journal Article in ACS APPLIED MATERIALS & INTERFACES

Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

L GouxW KimKarl OpsomerA BelmonteG KarF De StefanoVV Afanas'evU CelanoM HoussaWouter Devulder et al.

Thermal-stability optimization of Al₂O₃/Cu-Te based conductive-bridging random access memory systems

L GouxKarl OpsomerA FranquetG KarN JossartO RichardDJ WoutersR MüllerChristophe DetavernierM Jurczak et al.

A1 Journal Article in THIN SOLID FILMS

2011

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

L GouxKarl OpsomerR DegraeveR MullerChristophe DetavernierDJ WoutersM JurczakL AltimimeJA Kittl

A1 Journal Article in APPLIED PHYSICS LETTERS

2010

Non-linear dielectric constant increase with Ti composition in high-k ALD-HfTiOx films after O2 crystallization annealing

K TomidaM PopoviciKarl OpsomerN MenouWC WangA DelabieJ SwertsJ SteenbergenB KaczerSV Elshocht et al.