Research Explorer

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Researcher

Felix Cardon

Publications & Research Data

Awards & Distinctions

200 Results

2002

A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.

SY ZHUXP QUGP RUBZ LIChristophe DetavernierRoland VanmeirhaegheFelix Cardon

A2 Journal Article in CHINESE JOURNAL OF SEMICONDUCTORS

Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts

SY ZhuGP RuXP QuBZ LiRoland VanmeirhaegheChristophe DetavernierFelix Cardon

A1 Journal Article in CHINESE PHYSICS

Silicide formation for Ni and Pd bilayers on Si (100) substrates

Christophe DetavernierRoland VanmeirhaegheFelix Cardon

Sillicide formation for Ni and Pd bilayers on Si(100) substrates

XP QUChristophe DetavernierRoland VanmeirhaegheFelix Cardon

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

GP RuBZ LiGB JiangXP QuJing LiuRoland VanmeirhaegheFelix Cardon

A1 Journal Article in MATERIALS CHARACTERIZATION

2001

CoSi2 formation through SiO2

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEX

A1 Journal Article in THIN SOLID FILMS

CoSi2 nucleation in the presence of Ge.

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEX

A1 Journal Article in THIN SOLID FILMS

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.

SY ZHUChristophe DetavernierRoland VanmeirhaegheFelix CardonAnja BlondeelPaul ClauwsGP RUBZ LI

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Formation of epitaxial CoSi2 by a Cr or Mo interlayer : comparison with a Ti interlayer

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MaexH BenderB BrijsW Vandervorst

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Optical and structural characterisation of post deposition annealed electroluminescent blue emitting thin film phosphors

Davy WautersFelix CardonRoland Vanmeirhaeghe

Orientation-dependent stress build-up during the formation of epitaxial CoSi2

A SteegenChristophe DetavernierAlbert LauwersK MaexRoland VanmeirhaegheFelix Cardon

A1 Journal Article in MICROELECTRONIC ENGINEERING

Studie van de invloed van technologisch belangrijke productieprocesstappen op de elektrische eigenschappen van p-InP en n-InxGa1-xAs met behulp van schottkybarrières

Lieve GoubertFelix CardonRoland Vanmeirhaeghe

2000

A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy

SY ZhuChristophe DetavernierRoland VanmeirhaegheXP QuGP RuFelix CardonBZ Li

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A photoluminescence study of CaS: Pb thin films.

Jorg VersluysDirk PoelmanDavy WautersRoland VanmeirhaegheFelix Cardon

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Shiyang ZhuXin-Ping QuRoland VanmeirhaegheChristophe DetavernierGuo-Ping RuFelix CardonBing-Zong Li

A1 Journal Article in SOLID-STATE ELECTRONICS

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

SY ZhuRoland VanmeirhaegheChristophe DetavernierFelix CardonGP RuXP QuBZ Li

A1 Journal Article in SOLID-STATE ELECTRONICS

CoSi2 formation in the Ti/Co/SiO2/Si system

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEXH BENDERSY ZHU

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Determination of capture cross sections and trap depths of dominant centres in AgCl microcrystals doped with [Ru(CN)(6)](4-) complexes.

Jian HuaFreddy CallensFelix CardonD. Vandenbroucke

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction

SY ZhuChristophe DetavernierRoland VanmeirhaegheFelix CardonGP RuXP QuBZ Li

A1 Journal Article in SOLID-STATE ELECTRONICS

Emission color of Cu and Ag doped ACTFEL devices: a microscopic study.

Davy WautersDirk PoelmanR VANMEIRHAEGHEFelix Cardon

Influence of mixing entropy on the nucleation of CoSi2

Christophe DetavernierRoland VanmeirhaegheFelix CardonK Maex

A1 Journal Article in PHYSICAL REVIEW B

Influence of Ti on CoSi2 nucleation.

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEXW VANDERVORSTB BRIJS

A1 Journal Article in APPLIED PHYSICS LETTERS

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

GP RuXP QuSY ZhuBZ LiChristophe DetavernierRoland VanmeirhaegheFelix CardonRA DonatonK Maex

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Nondestructive characterization of thin silicides using x-ray reflectivity

Christophe DetavernierRoger De GryseRoland VanmeirhaegheFelix CardonGP RuXP QuBZ LiRA DonatonK Maex

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Optical characterisation of SrS: Cu and SrS: Cu,Ag EL devices

Davy WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

Photoluminescence of SrS: Cu, Ag thin films: influence of substrate and annealing conditions.

Dirk PoelmanDavy WautersJorg VersluysRoland VanmeirhaegheFelix Cardon

Photoluminescence of SrS: Cu,Ag and SrS1-xSex: Cu,Ag thin films

Dirk PoelmanDavy WautersRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SOLID STATE COMMUNICATIONS

Photoluminescent, electroluminescent and structural properties of CaS: Cu and CaS: Cu, Ag thin films

Davy WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

Shallow electron traps induced by [Ru(CN)(6)](4-) in AgCl microcrystals : a computer simulation study of transient microwave photoconductivity

Jian HuaFreddy CallensFelix CardonHans De MeyerD Vandenbroucke

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Studie van de invloed van productieprocesstappen op de elektrische eigenschappen van metaal/n-GaAs en metaal/n-AlxGa1-x schottkycontacten

Greet VanalmeFelix CardonRoland Vanmeirhaeghe

The influence of Ti capping layers on CoSi2 formation

Christophe DetavernierRoland VanmeirhaegheFelix CardonR.A. DonatonK. Maex

A1 Journal Article in MICROELECTRONIC ENGINEERING

1999

A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments

Greet VanalmeLieve GoubertRoland VanmeirhaegheFelix CardonPeter Van Daele

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A BEEM study of PtSi Schottky contacts on ion-milled Si

GP RuChristophe DetavernierRA DonatonAnja BlondeelPaul ClauwsRoland VanmeirhaegheFelix CardonK MaexXP QuSY Zhu et al.

A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes

S ZhuRoland VanmeirhaegheChristophe DetavernierGP RuBZ LiFelix Cardon

A1 Journal Article in SOLID STATE COMMUNICATIONS

BEEM studies of the PtSi/Si(100) interface electronic structure

T VdovenkovaV StrikhaFelix CardonRoland VanmeirhaegheGreet Vanalme

A1 Journal Article in JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

CoSi2 formation in the presence of interfacial silicon oxide

Christophe DetavernierRoland VanmeirhaegheFelix CardonRA DonatonK Maex

A1 Journal Article in APPLIED PHYSICS LETTERS

Effects of rapid thermal annealing on electron beam evaporated SrS:Ce thin film electroluminescent devices made in H2S ambient

Davy WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Formation and characterization of SPE grown ultra-thin cobalt disilicide film

XP QuGP RuBZ LiChristophe DetavernierRoland VanmeirhaegheFelix Cardon

Intrinsic optical and structural properties of SrS thin films

Dirk PoelmanDavy WautersRoland VanmeirhaegheFelix Cardon

A1 Journal Article in THIN SOLID FILMS

Optical time resolved spectroscopy of SrS: Cu, Ag ACTFEL devices

Davy WautersDirk PoelmanR VANMEIRHAEGHEFelix Cardon

Optical time resolved spectroscopy of SrS:Cu,Ag ACTFEL devices

D. WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

Photoluminescence study of SrS: Cu, Ag and SrS1-xSex: Cu, Ag thin films

Dirk PoelmanDavy WautersR VANMEIRHAEGHEFelix Cardon

Photoluminescence study of SrS:Cu,Ag and SrS1_xSex :Cu,Ag thin films

Dirk PoelmanD. WautersRoland VanmeirhaegheFelix Cardon

The influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide

Christophe DetavernierR. A. DonationK. MaexS. JinH. BenderRoland VanmeirhaegheFelix Cardon

Thermally enhanced quantum efficiency in hydrogenated amorphous silicon p-i-n photodiodes studied by intensity-modulated photocurrent spectroscopy.

D VANMAEKELBERGHJ VAN DE LAGEMAATREI SCHROPPFelix Cardon

A1 Journal Article in PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES

Transient photoconductivity study of shallow electron traps in [Ru(CN)(6)](4-) doped AgCl microcrystals : effects of doping concentration and position

Jian HuaFreddy CallensFelix CardonD Vandenbroucke

A1 Journal Article in IMAGING SCIENCE JOURNAL

1998

A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers.

Roland VanmeirhaegheGreet VanalmeLieve GoubertFelix CardonPeter Van Daele

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

GP RUJ LIUXP QUBZ LIChristophe DetavernierRoland VanmeirhaegheFelix Cardon

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Christophe DetavernierRoland VanmeirhaegheR DonatonK MaexFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Non-destructive characterization of thin silicides using X-ray reflectivity

Christophe DetavernierR DEGRYSERoland VanmeirhaegheFelix CardonGP RUBZ LI

1997

A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching

Greet VanalmeRoland VanmeirhaegheFelix CardonPeter Van Daele

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.

Roland VanmeirhaegheGM VANALMELieve GoubertFelix CardonPeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS

A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.

Lieve GoubertRoland VanmeirhaeghePaul ClauwsFelix CardonPeter Van Daele

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Influence of the growth conditions on the properties of CaS : Eu electroluminescent thin films

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

Possibilities and limitations of blue electroluminescence in CaS:Pb2+ thin films

Dirk PoelmanRoland VanmeirhaegheBA VermeerschFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1996

Electrochemical reduction vs, vapour deposition for n-GaAs/Cu Schottky-barrier formation : a comparative study

Philippe VereeckenGreet VanalmeRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS

Quantitative prediction of acceptor concentration reduction in boron doped silicon due to electron irradiation

JL EveraertFrans VerhaegenRoland VanmeirhaegheJozef UyttenhoveFelix Cardon

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

1995

A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky contacts due to mechanical polishing

J.L. EveraertRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A detailed XPS study of the rare earth compounds EuS and EuF3

Rita VercaemstDirk PoelmanLucien FiermansRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

A method for evaluating the frequency characteristics of ac thin film electroluminescent devices

Wang Zong-XinFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

An XPS study of the dopants’ valence states and the composition of CaS1−xSex:Eu and SrS1-xSex:Ce thin film electroluminescent devices

Rita VercaemstDirk PoelmanRoland VanmeirhaegheLucien FiermansWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.

Roland VanmeirhaegheLieve GoubertLucien FiermansWilly LaflereFelix CardonPeter De DobbelaerePeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS

Electrical transport in (100)CoSi2/Si contacts

Albert LauwersKK Kyllesbech LarsenM Van HoveRonald VerbeeckK MaexM Van RossumAn VercaemstRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Hydrogen passivation caused by 'soft' sputter etch cleaning of Si

An VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Occurrence of multiple dielectric‐loss curves for silver halide emulsions : difficulties of interpretation

Freddy CallensD VandenbrouckeLeen SoensFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Studie van de elektrische eigenschappen van Si/SiO2 strukturen met een ultradunne oxydelaag

Michel DepasFelix Cardon

Studie van rode elektroluminescentie op basis van europium gedoteerde CaS dunne filmen

Rita VercaemstFelix Cardon

The influence of Se-coevaporation on the emission spectra of CaS:Eu and SrS:Ce thin film electroluminescent devices

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

Transient microwave photoconductivity and computer simulation study of lr3+- and Rh3+-doped AgCI microcrystals

Marinus Van Den EedenFreddy CallensFelix CardonD. VandenbrouckeR. De Keyzer

A1 Journal Article in JOURNAL OF IMAGING SCIENCE AND TECHNOLOGY

1994

Computer simulation of transient microwave photoconductivity in silver halide microcrystals

Marinus Van Den EedenFreddy CallensA. De RooseFelix CardonR. De KeyzerD. Vandenbroucke

A1 Journal Article in JOURNAL OF IMAGING SCIENCE AND TECHNOLOGY

Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Elektroluminescentie in dunne-filmstructuren op basis van SrS, gedoteerd met Ce

Dirk PoelmanFelix Cardon

Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Thin film electroluminescence in SrS:Ce: the quest for blue light

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A4 Journal Article in BELVAC NEWS

XPS study of TbF3 and TbOF centres in ZnS

J Van Den BosscheKristiaan NeytsPatrick De VisschereDorina CorlatanHerman PauwelsRita VercaemstLucien FiermansDirk PoelmanRoland VanmeirhaegheWilly Laflere et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

1993

Determination of the concentration of interstitial silver ions in silver halide emulsion grains by means of dielectric-loss measurements : difficulties of interpretation

Freddy CallensD VandenbrouckeLeen SoensMarinus Van Den EedenFelix Cardon

A1 Journal Article in JOURNAL OF PHOTOGRAPHIC SCIENCE

Effect of moisture on performance of SrS:Ce thin film electroluminescent devices

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

An VercaemstRoland VanmeirhaegheWilly LaflereFelix CardonWilmert De BosscherR.J. Schreutelkamp

A1 Journal Article in SOLID-STATE ELECTRONICS

On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts

Ronald Van De WalleRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Recombination in semiconductor electrodes : investigation by the electrical and optoelectrical impedance method

Daniel VanmaekelberghAR De WitFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Tunnel oxides grown by rapid thermal oxidation

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in MICROELECTRONIC ENGINEERING

Valency States of rare earth dopants in thin film electroluminescent devices

Rita VercaemstDirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

1992

A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the role of defects in some compound semiconductor (GaAs, InP, CdTe) Schottky Barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

RECOMBINATION IN SEMICONDUCTOR ELECTRODES - INVESTIGATION BY THE ELECTRICAL-IMPEDANCE METHOD.

D VANMAEKELBERGHFelix Cardon

A1 Journal Article in ELECTROCHIMICA ACTA

Spectral shifts in thin film electroluminescent devices : an interference effect

Dirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

The influence of Se co-evaporation on the electroluminescent properties of SrS:Ce thin films

Dirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

1991

A study of sputter-induced defects in magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP

Ernest KabushemeyeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

An investigation on the influence of Si surface pre-treatment on the frequency dependence of the impedence of Co/n-Si Schottky barriers

A.L. De LaereRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n‐CdTe contacts

Roland VanmeirhaegheRonald Van De WalleWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen

Wilmert De BosscherRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Étude du comportement électrique et photovoltaique du contact Schottky fait sur le phosphure de gallium

Ernest KabushemeyeFelix Cardon

1990

An impedance study of electrochemically induced surface states at the p-GaP/electrolyte interface

H.H. GoossensWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Characterisation of CoSi2/- and TiSi2/n-GaAs Schottky barriers

J.L. EveraertRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers

L.M.O. Van Den BergheRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation

A De LaereRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the thermal stability of CoSi2/- and TiSi2/III-V compound (GaAs, InP) Schottky barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

1989

A comparative study of anodic charge-transfer kinetics at dark p-type GaAs and at illuminated n-type GaAs electrodes in aqueous and in mixed aqueous-methanolic solutions

S. LingierW.P. GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electron paramagnetic resonance of thermal donors in germanium

Felix CardonPaul ClauwsPaul MatthysEtienne BoesmanJoost Vennik

A1 Journal Article in PHYSICAL REVIEW B

On the influence of a thin thermal oxide layer on MIS-type GaP Schottky diode behaviour

Ernest KabushemeyeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1988

A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi₂/Si Schottky barriers

Wilmert De BosscherRoland VanmeirhaegheA De LaereWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers

Roland VanmeirhaegheLMO Van den BergheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Electrical and photovoltaic properties of metal/p-InP Schottky barriers

Yiping SongFelix Cardon

On the impedance associated with electron-hole recombination in the space charge layer of an illuminated semiconductor/electrolyte interface

Daniel VanmaekelberghFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The growth of thin oxide layers on GaAs in methanol

Hilde BarbeRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Transient fotogeleiding in zilverhalogenide mikrokristallen

Guy VekemanFelix Cardon

Transient photoconductivity of silver bromide emulsion grains doped with iridium ions

Guy VekemanY.B. PengWenefride Van der VorstFelix Cardon

A1 Journal Article in JOURNAL OF IMAGING SCIENCE

1987

A comparison of anodic charge-transfer kinetics between dark p-type and illuminated n-type GaP/Fe(CN)4-1 6 interfaces

Daniel VanmaekelberghLu Shou YunWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

A quantitative analysis of photoinduced capacitance peaks in the impedance of the n-GaAs electrode

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Large barrier tunnel metal-insulator-semiconductor structures

Peter HanselaerRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the influence of the thin interfacial oxide layer on the electrical and photovoltaic properties of Au/oxide/p-Inp diodes

Y.P. SongRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the temperature dependence of the Mott-Schottky characteristics of high-barrier TI-p-Si metal-insulator-semiconductor diodes

D.U. LootensPeter HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Photoconductivity at 77 K of an OsCl2-6-doped AgBr emulsion

Y.B. PengGuy VekemanWenefride Van der VorstFelix Cardon

A1 Journal Article in JOURNAL OF IMAGING SCIENCE

Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers

DA VandenbrouckeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Study of the electrical and interfacial properties of TiSi2/Si Schottky diodes

Wilmert De BosscherRoland VanmeirhaegheWilly LaflereFelix Cardon

Bookchapter in Le vide, les couches minces

The participation of surface decomposition intermediates in charge transfer processes at dark p-type GaP/electrolyte interfaces

Lu Shou YunDaniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

1986

Calculation of the electrical impedance associated with the surface recombination of free carriers at an illuminated semiconductor/electrolyte interface

Daniel VanmaekelberghFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers

LMO Van den BergheRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

YP SongRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Studie van de elektrische eigenschappen van Si MIS Schottky-Barriere structuren

Peter HanselaerFelix Cardon

Studies on the n-GaAs photoanode in aqueous electrolytes : 3. Recombination resistance

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures

Peter HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The influence of silicide formation on the barrier height of Ti/SI MIS Schottky barriers

Walt De BosscherRoland VanmeirhaeghePeter HanselaerL. CaenepeelWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1985

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Characteristics of the RuO₂-n-GaAs Schottky barrier

DA VandenbrouckeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of osmium doping on the photoconductivity of a silver bromide emulsion

Y.B. PengGuy VekemanFelix CardonWenefride Van der Vorst

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effects of anodic polarization upon electrochemically grown oxide films on p-Si, studied by ellipsometric and capacitance measurements

J.J. MercierFilip FransenFelix CardonMarc MadouWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Studies on the n-GaAs photoanode in aqueous electrolytes : 1. Behaviour of the photocurrent in the presence of a stabilizing agent

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Studies on the n-GaAs photoanode in aqueous electrolytes : 2. Differential capacitance behaviour

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

1984

Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1983

Elucidation of the current-doubling mechanism at the ZnO anode by interpretation of photo-electrochemical noise data

Felix CardonWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the dielectric properties of semiconducting materials as obtained from impedance measurements on Schottky barriers

Filip FransenMarc MadouWilly LaflereFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Relationship between stabilization and photocurrent at n-type semiconductor electrodes on the basis of a model including surface recombination through decomposition intermediates

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I

Role of decomposition-induced and other surface states in the photoelectrochemical kinetics of n-GaP/Fe2+

Daniel VanmaekelberghWilfried RigoleWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I

The photoelectrochemical etching of TiO2 single crystals

A. PraetFernand Vanden KerckhoveWalter GomesFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

1982

An experimental study of Ti-pSi MIS type Schottky barriers

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Anodic oxidation of p-type silicon in methanol as compared to glycol

Marc MadouWalter GomesFilip FransenFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Discussion of 'Equivalent circuit analysis of the impedance response of semiconductor/electrolyte/counterelectrode cells' [J. F. McCann and S. P. S. Badwal (pp. 551–559, Vol. 129, No. 3)]

Walter GomesFelix Cardon

Electron energy levels in semiconductor electrochemistry

Walter GomesFelix Cardon

A1 Journal Article in PROGRESS IN SURFACE SCIENCE

Electron trapping in the oxide layer of MIS-type Al-, Au-, Ag- and Sn-n type GaAs Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Investigation on photoelectrochemical cells based upon silicon/methanol interfaces. Part 1 : n-type Si

Philip BrondeelMarc MadouWalter GomesFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

Investigation on photoelectrochemical cells based upon silicon/methanol interfaces. Part 2 : p-type Si

Marc MadouPhilip BrondeelWalter GomesPeter HanselaerFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Study of stabilization and surface recombination on n-GaP photoelectrodes : mechanisms and interrelation

D. VanmaeckelbergWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1981

Competing photoelectrochemical reactions on semiconductor electrodes

Walter GomesF. Van OvermeireD. VanmaeckelbergGuido Vanden KerckhoveFelix Cardon

Bookchapter in Photoeffects at Semiconductor-Electrolyte Interfaces

Exploratory investigation on the semiconductor properties of Li-doped CoO by electrochemical measurements

G. Van SteertegemWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layer

Roland VanmeirhaegheWilly LaflereYu-Min LiFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1980

Competing photoelectrochemical reactions on semiconductor electrodes

F. Van OvermeireWalter GomesFernand Vanden KerckhoveFelix Cardon

Effects of thin oxide layers on the characteristics of GaAs MIS solar cells

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Experimentele studie van GaAs/metaal en GaAs/Elektrolyt Schottky-barrières onder belichting

Roland L. VanmeirhaegheWilly DekeyserFelix Cardon

Investigation of the C-V behaviour of GaAs-metal and GaAs electrolyte contacts under forward bias

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Investigation on the kinetics of electroreduction processes at dark TiO2 and SrTiO3 single crystal semiconductor electrodes

J. VandermolenWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Light-intensity dependence in the kinetics of normal-GaP photoelectrode stabilization

F. Van OvermeireFernand Vanden KerckhoveWalter GomesFelix Cardon

A1 Journal Article in BULLETIN DES SOCIETES CHIMIQUES BELGES

On the kinetics of semiconductor-electrode stabilization

Felix CardonWalter GomesFernand Vanden KerckhoveDaniel VanmaekelberghFrank Van Overmeire

A1 Journal Article in FARADAY DISCUSSIONS

1979

Electrochemical and photoelectrochemical properties of the semiconducting SrTiO3 single crystal electrode

Fernand Vanden KerckhoveJ. VandermolenWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the influence of the surface pretreatment on the photocurrent-voltage characteristics and the spectral response of the n-GaAs-electrolyte interface

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Photocurrent oscillations at the n-GaAs/electrolyte interface

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

1978

A comparative study of electrochemical and photoelectrochemical reactions at semiconducting oxidized Ti and TiO2 single crystal electrodes in view of energy conversion applications

E.C. DutoitFelix CardonFernand Vanden KerckhoveWalter Gomes

A1 Journal Article in JOURNAL OF APPLIED ELECTROCHEMISTRY

Cyclic-voltammetric study of n- and p-type GaP electrodes

M.J. MadouFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot

Felix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Some electrochemical processes at the n- and p-InP electrodes

A VervaetWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Study of the Schottky barrier at the N- and P-type indium phosphide electrode/electrolyte interface

A.-M. Van WezemaelWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

1977

Anodic processes at the n- and p-type GaP electrodes

M.J. MadouFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Impedance measurements at the N- and P-type GaP single crystal electrode

M.J. MadouFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1976

Electrochemical properties of the semiconducting TiO2 (rutile) single crystal electrode

E.C. DutoitFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electrochemical reactions involving holes at the illuminated TiO2 (rutile) single crystal electrode

E.C. DutoitFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheE.C. DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1975

Investigation on the frequency-dependence of the impedance of the nearly ideally polarizable semiconductor electrodes CdSe, CdS and TiO2

E.C. DutoitRoland VanmeirhaegheFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheEC DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

On the interpretation of Mott-Schottky plots determined at semiconductor/electrolyte systems

Roger De GryseWalter GomesFelix CardonJoost Vennik

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Temperature dependence of the conductivity of ZnO(Li), influenced by oxygen chemisorption, desorption and photolysis

Etienne ArijsFelix CardonWenefride Van der Vorst

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

1974

Electrochemical reactions at the illuminated CdSe anode

R.A.L. Vanden BergheWalter GomesFelix Cardon

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

Electron transfer involving tunneling from surface states at the dark anodic CdS/indifferent electrolyte interface

R.A.L. Vanden BergheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the differential capacitance of the n- and p-type gallium arsenide electrode

Willy LaflereFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1973

On the electrochemical behaviour of the hexacyanoferrate redox system at different semiconductor electrodes

Walter GomesFelix Cardon

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

On the electrochemical reactivity of the redox couple Fe(CN)63−/Fe(CN)64− at the single crystal zinc oxide electrode

R.A.L. Vanden BergheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Some aspects of the anodic behaviour of CdS single crystals in indifferent electrolyte solutions

R.A.L. Vanden BergheWalter GomesFelix Cardon

A2 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

The influence of surface donor states on the chemisorption kinetics of oxygen at the surface of ZnO single crystals : I. Theoretical model

Etienne ArijsFelix Cardon

A1 Journal Article in JOURNAL OF SOLID STATE CHEMISTRY

The influence of surface donor states on the chemisorption kinetics of oxygen at the surface of ZnO single crystals II : experimental results

Etienne ArijsFelix CardonWenefride Van der Vorst

A1 Journal Article in JOURNAL OF SOLID STATE CHEMISTRY

1972

Impedance- and noise-spectrum calculation for a semiconductor-electrolyte interface with electron transfer through surface states

A1 Journal Article in PHYSICA

On the mechanism of the electrochemical reduction of iodine at the cadmium sulfide electrode

Felix CardonWalter Gomes

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

1971

Calculation of the photoelectrochemical noise spectrum for a semiconductor-electrolyte system with current multiplication

A1 Journal Article in PHYSICA

Experiments on the zinc oxide/electrolyte interface during anodic oxidation reactions under pulsed illumination

Felix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Study of dye sensitization effects at the ZnO anode by noise and pulsed light measurements

Walter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

Study of noise associated with oxidation reactions at the illuminated single crystal zinc oxide anode

Walter GomesFelix Cardon

A1 Journal Article in JOURNAL OF SOLID STATE CHEMISTRY

1970

Surface states at the single crystal zinc oxide/electrolyte interface : II. Noise measurements

Felix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

Surface states at the single crystal zinc oxide/electrolyte interface : I. Impedance measurements

Walter GomesFelix Cardon

A4 Journal Article in BERICHTE DER BUNSENGESELLSCHAFT FÜR PHYSIKALISCHE CHEMIE

1969

The kinetics of oxygen adsorption on Li doped ZnO single crystals

Etienne ArijsFelix CardonWenefride Van der Vorst

A1 Journal Article in SURFACE SCIENCE

1968

Temperature dependence of photoconductivity in CdS-type photoconductors

A1 Journal Article in PHYSICA

1966

Theory of CdS-type superlinear photoconductivity due to simultaneous excitation from localized levels and the valence band

A1 Journal Article in PHYSICA STATUS SOLIDI

1965

Theory of CdS-type superlinear photoconductivity due to excitation from localized levels

A1 Journal Article in PHYSICA STATUS SOLIDI

1963

Impact ionization of centers in solids by electrons accelerated by an electric field

A1 Journal Article in PHYSICA STATUS SOLIDI

On the electrical properties of nearly stoichiometric rutile single criystals (TiO2)

A1 Journal Article in PHYSICA STATUS SOLIDI

1962

Relation between polarization phenomenon and space-charge-limited currents in rutile single crystals (TiO2)

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1961

Door ruimteladingen begrensde stromen in rutiel (TiO2)

A4 Journal Article in BULLETIN DE LA SOCIETE BELGE DE PHYSIQUE

Polarization and space-charge-limited curents in rutile (TiO2)

A2 Journal Article in PHYSICA

Hydrogen passivation caused by 'soft' sputter etch cleaning of Si. Materials Research Society, Sympos. Proceedings, 1994, nr. 337, pp. 657-662, 4 figg.

AS VERCAEMSTRoland L Van MeirhaegheWilly LaflereFelix Cardon