ICP-CVD system for the deposition of high-quality dielectric layers at low temperature

01 April 2021 → 31 March 2023
Regional and community funding: Industrial Research Fund
Research disciplines
  • Natural sciences
    • Photonics, optoelectronics and optical communications
  • Engineering and technology
    • Nanofabrication, growth and self assembly
    • Nanomanufacturing
Micro- and nanofabrication photonic integrated circuits plasma processing
Project description

The aim of the project is to acquire an ICP-CVD (Inductively Coupled Plasma Chemical Vapor Deposition) for the deposition of dielectric layers such silicion dioxide or silicon nitride. Using this tool, we will then realize both ultra-low loss waveguides and micro-lasers based on hybrid stacks of colloidal quantum dots and dielectric cladding layers. The fact that the ICP-CVD technology allows to deposit these layers at much lower temperatures compared to classic deposition technologies is essential given the sensitivity of the quantum dots with respect to environmental influences. Ultra-low loss waveguides, enabled by high-quality SiO2 cladding layers deposited using the ICP-CVD technology, are an essential building block in realizing narrow-line width lasers and comb-lasers, desired for applications in metrology and spectroscopy.