Fibre-optics can be seen as the cornerstone of modern-day society, owing to its ability to almost instantly connect people and services globally. Silicon photonics is a strong driving force for the continued growth of this technology, allowing for the simultaneous integration of optical and electrical components on one Si platform and, hence, profiting from the mature fabrication knowhow of the Si-based microelectronic industry. While the majority of wavelengths used today are located in the telecom window (0.8 – 1.6 µm), increasing the wavelength regime to the short-wavelength infrared (SWIR) (1.5 – 3 µm) would pave the way for several novel advancements in sensing and diagnostics. As the absorption lines of many (bio)molecules are enhanced in this region, the combination of the SWIR with the economic viability of Silicon photonics would enable a new generation of highly sensitive, cost-effective detectors. The monolithic integration of light sources on Si, offering clear advantages in device scaling and production cost over heterogenous integration methods, still remains an obstacle to be overcome. Here, the use of Nano-ridge engineering is proposed, which is an innovative monolithic deposition approach allowing for the integration of III-V devices on Si substrates. By leveraging the SWIR optical emission of GaSb and its III-V alloys, optically pumped Nano-ridges lasers consisting of epitaxially grown GaSb-based alloys will be demonstrated, serving as proof-of-concept.