Semiconductor devices are the backbone of modern electronics, enabling everything from simple diodes to complex integrated circuits (ICs).

The journey from fundamental understanding of the devices to full IC design involves several critical steps. In this project, we aim to advance the design and understanding of semiconductor devices with a primary focus on Gallium Nitride (GaN) power devices. We will focus on three major steps: first, Technology Computer-Aided Design (TCAD) simulations play a crucial role in this process. TCAD tools allow for the detailed modeling of semiconductor devices, providing insights into their behavior under various conditions. Second, compact modeling is another essential aspect, bridging the gap between TCAD simulations and circuit design. The final step is the design of ICs employing those devices. We aim to push the boundaries of power devices, paving the way for more efficient, reliable and robust (power) electronic systems.