Research Explorer

Your browser does not support JavaScript or JavaScript is not enabled. Without JavaScript some functions of this webapplication may be disabled or cause error messages. To enable JavaScript, please consult the manual of your browser or contact your system administrator.

Project

Characterisation of Carrier Dynamics in GaAs-InGaAs Nanoridge Lasers Grown on Silicon

Outputs and Outcomes

Code

01SC1219

Duration

01 September 2019 → 31 August 2023

Funding

Regional and community funding: Special Research Fund

Promotor

Dries Van Thourhout

Fellow

Zhongtao Ouyang

Research disciplines

Natural sciences
- Applied mathematics in specific fields not elsewhere classified

Keywords

Heterogeneous integration photonics lasers

Project description

Using the ART-technique we recently demonstrated the possibility to realize lasers from III-V semiconductors grown on standard silicon substrates. To evaluate and further optimize the intrinsic quality of these materials, this project will study the influence of growth and design parameters on the
carried dynamics of the free carriers in the III-V material.

English

Dutch

English

Cookie settings

In addition to functional cookies which are necessary for the website to function, Ghent University uses non-functional cookies such as statistical cookies and social media cookies. These non-functional cookies can also be placed by third parties, for example to measure the use of the site or to share content on social media. Certain media are only available if you accept the cookies. You can set and modify your cookie preferences yourself. Find out what cookies we use and why in the Cookie Statement.

Analytics

AnalyticsWe'll collect information about your visit to our site. It helps us understand how the site is used – what's working, what might be broken and what we should improve.

Powered by