"Go-no go milestone: Evaluation of reached potential ALO process
developed on Si wafers and HPGe substrates. The Oit and Qox of
the passivation layer should be in the recommended range
(determined in WP1) in a controllable and reproducible way within
the given constraints and detectors with ALO passivation should
reach a minimum specification to ensure that the ALO process did
not deteriorate the HPGe device".