"Go-no go milestone: Evaluation of reached potential ALO process

developed on Si wafers and HPGe substrates. The Oit and Qox of

the passivation layer should be in the recommended range

(determined in WP1) in a controllable and reproducible way within

the given constraints and detectors with ALO passivation should

reach a minimum specification to ensure that the ALO process did

not deteriorate the HPGe device".