doctoraat Hongtao Chen
Advanced Ge on Si Optolelectronic Devices for Chip-Scale Optical Interconnects
The goal of this Ph.D. is to develop a novel Ge-based APD that can operate at CMOS compatible voltages (2v or less). Advanced TCAD modeling will be used to engineer the internal electrical field in the Ge device to optimize the internal gain. Particular attention will be paid to minimize both amplification noise and dark current, while achieving the highest possible (primary) responsivity and device bandwith.