Project

Advanced Ge on Si Optolelectronic Devices for Chip-Scale Optical Interconnects

Duration
01 October 2012 → 30 September 2016
Funding
Regional and community funding: various
Research disciplines
  • Natural sciences
    • Photonics, optoelectronics and optical communications
Keywords
APD silicon photonics
 
Project description

doctoraat Hongtao Chen



Advanced Ge on Si Optolelectronic Devices for Chip-Scale Optical Interconnects



IMEC



The goal of this Ph.D. is to develop a novel Ge-based APD that can operate at CMOS compatible voltages (2v or less). Advanced TCAD modeling will be used to engineer the internal electrical field in the Ge device to optimize the internal gain. Particular attention will be paid to minimize both amplification noise and dark current, while achieving the highest possible (primary) responsivity and device bandwith.