Worldwide efforts are underway to realize the first useful quantum computers. Prominent technologies in the pursuit of this major goal are the neutral atom and ion-based quantum computing platforms. In the quest for useful, programmable, large-scale quantum computers, researchers are continuously increasing the number of atoms used in their machines, with current system sizes reaching 10s to 100s of atoms. Optical modulators delivering nanosecond to millisecond laser pulses to the atoms form a key part of these quantum machines. Current systems rely on bulk optical modulators for atom control, but this approach becomes prohibitively complex and expensive when scaling to 100s of quantum channels and beyond. On-chip integration offers a solution. Many relevant atomic transitions lie in the blue wavelength range. Silicon nitride photonic integrated circuits have low propagation loss in this wavelength range, but lack the high-speed modulation capability. We propose to integrate III-nitride heterostructure devices with silicon nitride photonic circuits to solve this issue. We will make use of the quantum-confined Stark effect in III-nitride quantum wells to achieve high-speed modulation with high efficiency. The III-nitride devices will be integrated with silicon nitride photonic circuits by means of transfer printing, a high-throughput, scalable fabrication technique. We will fabricate arrays of modulators and interface them with atoms to demonstrate quantum control.