The project will focus on the optimisation of the design of heterogeneously integrated laser diodes on silicon or silicon nitride (DFB as well as DBR laser diodes) for data communication and sensing. The optimization will target a very high wall plug efficiency and the optimum designs will also be fabricated and characterised. Silicon and silicon nitride are themselves not suitable as material for the implementation of light sources and must be combined with III-V materials on the basis of Indium Phosphide or Gallium Arsenide. These III-V materials are,  because of differences in crystal structure, hard to grow on silicon(nitride) and require some sort of hybrid or heterogeneous integration (using bonding and printing techniques).

For the optimisation, the epitaxial layer structure of the III-V will be optimized first.