Research Explorer

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Researcher

Zahia Bougrioua

40 Results

2003

AlGaN/GaN HEMTS: material, processing, and characterization

F CALLET PALACIOSE MONROYJ GRAJALM VERDUZahia BougriouaIngrid Moerman

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures

Zahia BougriouaIngrid MoermanL NISTORB VAN DAELEE MONROYT PALACIOSF CALLEM LEROUX

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Evidence of an impurity band at an n-GaN/sapphire interface

C MavroidisJJ HarrisRB JackmanZahia BougriouaIngrid Moerman

A1 Journal Article in DIAMOND AND RELATED MATERIALS

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A JIMENEZZahia BougriouaJM TIRADOAF BRANAE CALLEJAE MUNOZIngrid Moerman

A1 Journal Article in APPLIED PHYSICS LETTERS

2002

Fabrication and performance of AlGaN/GaN HEMTS.

F CALLET PALACIOSE MONROYJ GRAJALJM TIRADOA JIMENEZR RANCHALE MUNOZM VERDUFJ SANCHEZ et al.

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F = 4 GHz.

N VELLASC GAQUIEREY GUHELM WERQUIND DUCATTEAUB BBOUDARTJC DE JAEGERZahia BougriouaM GERMAINMonique Leys et al.

Influence of process technology on DC-performance of GaN-based HFETs.

D MISTELET ROTTERZahia BougriouaM MARSOH ROLLH KLAUSINGF FEDLERO SEMCHINOVAJ ADERHOLDIngrid Moerman et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by Electron Beam Induced Current.

C GRAZZIM ALBRECHTHP STRUNKZahia BougriouaIngrid Moerman

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.

C MAVROIDISJJ HARRISRB JACKMANI HARRISONBJ ANSELLZahia BougriouaIngrid Moerman

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Relation between microstructure and 2DEG properties of AlGaN/GaN structures.

B VAN DAELEG VAN TENDELOOM GERMAINMonique LeysZahia BougriouaIngrid Moerman

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N.

E MONROYF CALLER RANCHALT PALACIOSM VERDUFJ SANCHEZMT MONTOJOM EICKHOFFF OMNESZahia Bougrioua et al.

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

2001

2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE.

Zahia BougriouaJL FARVACQUEIngrid MoermanF CAROSELLA

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

AlGaN/GaN-based MOSHFETs with different gate dielectrics and treatments

D MISTELET ROTTERKS ROVERS PAPROTTAZahia BougriouaF FEDLERH KLAUSINGOK SEMCHINOVAJ STEMMERJ ADERHOLD et al.

Chemical mapping of InGaN MQWs.

N SHARMAD TRICKERPaul ThomasZahia BougriouaKoen JacobsJ CHEYNSIngrid MoermanT THRUSHL CONSIDINEA BOYD et al.

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes.

E MONROYF CALLEJL PAUE MUNOZM VERDUFJ SANCHEZMT MONTOJOF OMNESZahia BougriouaIngrid Moerman et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202.

JL FARVACQUEZahia BougriouaIngrid Moerman

A1 Journal Article in PHYSICAL REVIEW B-CONDENSED MATTER

Heterostructure field effect transistor types with novel gate dielectrics.

D MISTELET ROTTERZahia BougriouaKS ROVERF FEDLERH KLAUSINGJ STEMMEROK SEMCHINOVAJ ADERHOLDJ GRAUL

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Material optimisation for AlGaN/GaN HFET applications.

Zahia BougriouaIngrid MoermanN SHARMARH WALLISJan CheynsKoen JacobsEJ THRUSHL CONSIDINER BEANLANDJL FARVACQUE et al.

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Microstructural aspects of the early stages of GaN growth by MOCVD

CS RamlollZahia BougriouaJS BarnardCJ HumphreysIngrid Moerman

A1 Journal Article in Institute of Physics Conference Series

Mobilité dans GaN en présence de parois de dislocations

JL FarvacqueZahia BougriouaIngrid Moerman

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures.

JJ HARRISKJ LEET WANGS SAKAIZahia BougriouaIngrid MoermanEJ THRUSHJB WEBBH TANGT MARTIN et al.

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reliability of Schottky contacts on AlGaN.

E MONROYF CALLET PALACIOSJ SANCHEZ-OSORIOM VERDUFJ SANCHEZMT MONTOJOF OMNESZahia BougriouaIngrid Moerman et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Reliability of Schottky contacts on AlGaN.

E MONROYF CALLET PALACIOSJ SANCHEZ-OSORIOM VERDUFJ SANCHEZMT MONTOJOF OMNESZahia BougriouaIngrid Moerman

Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers.

C MAVROIDISJJ HARRISK LEEI HARRISONBJ ANSELLZahia BougriouaIngrid Moerman

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

2000

Chemical mapping of V-defects in InGaN MQWs.

N SHARMADM TRICKERPJ THOMASCJ HUMPHREYSZahia BougriouaKoen JacobsJan CheynsIngrid Moerman

Development of GaN-materials for opto-electronic and electronic applications

Jan CheynsKoen JacobsZahia BougriouaIngrid Moerman

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.

A STAFFORDS IRVINEZahia BougriouaKoen JacobsIngrid MoermanEJ THRUSHL CONSIDINE

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.

A STAFFORDS IRVINEZahia BougriouaKoen JacobsIngrid MoermanEJ THRUSHL CONSIDINE

Some considerations on the growth of highly resistive GaN layers.

Zahia BougriouaKoen JacobsJan CheynsIngrid Moerman

Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls.

JL FARVACAQUEZahia BougriouaIngrid Moerman

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

1999

Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy.

B HAMILTONK FERHAHJ DAVIDSONP DAWSONE WHITTAKERTS CHENGCT FOXONZahia Bougrioua

Influence of growth temperature on electrical characteristics of Silicon doped GaN grown by LP-MOVPE.

Zahia BougriouaIngrid MoermanPiet DemeesterEJ THRUSHJL GUYAUXJC GARCIA

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD.

JJ HARRISKJ LEEI HARRISONLB FLANNERYD KORAKAKIST CHENGCT FOXONZahia BougriouaIngrid MoermanWim Van Der Stricht et al.

Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.

JJ HARRISKJ LEEI HARRISONLB FLANNERYD KORAKAKISTS CHENGCT FOXONZahia BougriouaIngrid MoermanWim Van Der Stricht et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Microscale luminescence from ELOG specimens on (0001) sapphire.

A AMOKRANES DASSONNEVILLEB SIEBERK JACOBSZahia BougriouaIngrid Moerman

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS

Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE.

Zahia BougriouaJL FARVACQUEIngrid MoermanPiet DemeesterJJ HARRISK LEEG VAN TENDELOOO LEBEDEVEJ THRUSH

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE.

JL FARVACQUEZahia BougriouaIngrid MoermanG VAN TENDELOOO LEBEDEV

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE.

Zahia BougriouaJL FARVACQUEIngrid MoermanPiet DemeesterJJ HARRISK LEEG VAN TENDELOOO LEBEDEVEJ THRUSH

Electrical characteristics of n-type GaN grown by LP-MOVPEPresented at the First Arab Congress on Materials Science (ACMS-1), 25-27 October 1999, Sidi Bel Abbès, Algeria, p. 16.

Zahia BougriouaJL FARVACQUEIngrid MoermanEJ THRUSH

Investigation into the transport properties of MBE grown GaN

BJ ANSELLI HARRISONCT FOXONTS CHENGJJ HARRISC MAVROIDISZahia BougriouaIngrid Moerman