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Researcher
Willy Laflere
Profile
Projects
Publications & Research Data
Activities
Awards & Distinctions
Patents
68
Results
1997
Influence of the growth conditions on the properties of CaS : Eu electroluminescent thin films
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1997
Influence of the growth conditions on the properties of CaS:Eu electroluminescent thin films.
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1997
1995
A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky contacts due to mechanical poilishing
J.L. Everaert
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1995
A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU/N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING.
JL EVERAERT
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1995
A detailed XPS study of the rare earth compounds EuS and EuF3
Rita Vercaemst
Dirk Poelman
Lucien Fiermans
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
1995
AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES.
Rita Vercaemst
Dirk Poelman
Roland Vanmeirhaeghe
Lucien Fiermans
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1995
An XPS study of the dopants’ valence states and the composition of CaS1−xSex:Eu and SrS1-xSex : Ce thin film electroluminescent devices
Rita Vercaemst
Dirk Poelman
Roland Vanmeirhaeghe
Lucien Fiermans
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1995
An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.
Roland Vanmeirhaeghe
Lieve Goubert
Lucien Fiermans
Willy Laflere
Felix Cardon
Peter De Dobbelaere
Peter Van Daele
A1
Journal Article
in
MICROSCOPY OF SEMICONDUCTING MATERIALS
1995
Hydrogen passivation caused by 'soft' sputter etch cleaning of Si
An Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1995
The influence of Se-coevaporation on the emission spectra of CaS:Eu and SrS:Ce thin film electroluminescent devices
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1995
THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1995
1994
Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.
Michel Depas
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1994
Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation
Michel Depas
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1994
Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
1994
Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
1994
Thin film electroluminescence in SrS:Ce: the quest for blue light
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A4
Journal Article
in
BELVAC NEWS
1994
XPS study of TbF3 and TbOF centres in ZnS
J Van Den Bossche
Kristiaan Neyts
Patrick De Visschere
Dorina Corlatan
Herman Pauwels
Rita Vercaemst
Lucien Fiermans
Dirk Poelman
Roland Vanmeirhaeghe
Willy Laflere
et al.
A1
Journal Article
in
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
1994
1993
EFFECT OF MOISTURE ON PERFORMANCE OF SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
1993
Effect of moisture on performance of SrS:Ce thin film electroluminescent devices
Dirk Poelman
Rita Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
1993
On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/rho-Si contacts
An Vercaemst
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
Wilmert De Bosscher
R.J. Schreutelkamp
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1993
ON THE INFLUENCE OF SPUTTER ETCH CLEANING ON THE SILICIDATION, THE THERMAL-STABILITY AND THE ELECTRICAL CHARACTERISTICS OF TI/P-SI CONTACTS.
AS VERCAEMST
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
W DEBOSSCHER
RJ SCHREUTELKAMP
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1993
On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts
Ronald Van De Walle
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
1993
Tunnel oxides grown by rapid thermal oxidation
Michel Depas
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
MICROELECTRONIC ENGINEERING
1993
1992
A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes
Michel Depas
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1992
On the role of defects in some compound semiconductor (GaAs, InP, CdTe) Schottky Barriers
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
C1
Conference
1992
Spectral shifts in thin film electroluminescent devices : an interference effect
Dirk Poelman
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1992
The influence of Se co-evaporation on the electroluminescent properties of SrS : Ce thin films
Dirk Poelman
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1992
THE INFLUENCE OF SE COEVAPORATION ON THE ELECTROLUMINESCENT PROPERTIES OF SRSCE THIN-FILMS.
Dirk Poelman
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF LUMINESCENCE
1992
1991
A study of sputter-induced defects in magnetron-sputtered CoSi 2 and TiSi2 Schottky barriers on n- and p-type GaP
Ernest Kabushemeye
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
1991
A STUDY OF SPUTTER-INDUCED DEFECTS IN MAGNETRON-SPUTTERED COSI2 AND TISI2 SCHOTTKY BARRIERS ON NORMAL-TYPE AND PARA-TYPE GAP
E KABUSHEMEYE
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
1991
An investigation on the influence of Si surface pre-treatment on the frequency dependence of the impedence of Co/n-Si Schottky barriers
A.L. De Laere
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1991
AN INVESTIGATION ON THE INFLUENCE OF SI SURFACE PRETREATMENT ON THE FREQUENCY-DEPENDENCE OF THE IMPEDANCE OF CO N-SI SCHOTTKY BARRIERS
AL DELAERE
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1991
On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n‐CdTe contacts
Roland Vanmeirhaeghe
Ronald Van De Walle
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
1991
Titanium silicide p-Si Schottky barriers formed by rapid thermal processing in nitrogen
W DE BOSSCHER
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A2
Journal Article
in
Soc. St. Electron, 34(8), pp. 827-834, 11 figg
1991
TITANIUM SILICIDE/P-SI SCHOTTKY BARRIERS FORMED BY RAPID THERMAL-PROCESSING IN NITROGEN
W DEBOSSCHER
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1991
Titanium silicide/rho-Si Schottky barriers formed by rapid thermal processing in nitrogen
Wilmert De Bosscher
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1991
1990
Characterisation of CoSi2/- and TiSi2/n-GaAs Schottky barriers
J.L. Everaert
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1990
On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers
L.M.O. Van Den Berghe
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1990
On the electrical properties, the interfacial reactivity and the thermal stability of CoSi₂/-, TiSi₂/-, Co/- and Ti/p-InP Schottky barriers
LMO Van den Berghe
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1990
On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation
A De Laere
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1990
On the thermal stability of CoSi2/- and TiSi2/III-V compound (GaAs, InP) Schottky barriers
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
C1
Conference
1990
1989
On the influence of a thin thermal oxide layer on MIS-type GaP Schottky diode behaviour
Ernest Kabushemeye
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1989
1988
A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi₂/Si Schottky barriers
Wilmert De Bosscher
Roland Vanmeirhaeghe
A De Laere
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1988
A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers
Roland Vanmeirhaeghe
LMO Van den Berghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1988
1987
Large barrier tunnel metal-insulator-semiconductor structures
Peter Hanselaer
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1987
On the influence of the thin interfacial oxide layer on the electrical and photovoltaic properties of Au/oxide/p-Inp diodes
Y.P. Song
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1987
On the temperature dependence of the Mott-Schottky characteristics of high-barrier TI-p-Si metal-insulator-semiconductor diodes
D.U. Lootens
Peter Hanselaer
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
1987
Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers
DA Vandenbroucke
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1987
Study of the electrical and interfacial properties of TiSi2/Si Schottky diodes
Wilmert De Bosscher
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
Bookchapter
in
Le vide, les couches minces
1987
1986
Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers
LMO Van den Berghe
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1986
On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
YP Song
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1986
The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures
Peter Hanselaer
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
A1
Journal Article
in
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
1986
The influence of silicide formation on the barrier height of Ti/SI MIS Schottky barriers
Walt De Bosscher
Roland Vanmeirhaeghe
Peter Hanselaer
L. Caenepeel
Willy Laflere
Felix Cardon
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1986
1985
Characteristics of the RuO₂-n-GaAs Schottky barrier
DA Vandenbroucke
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1985
1984
Comment on the paper entitled 'Characterization of the interface states at Al-GaAs Schottky barriers with a thin interface layer'
Roland Vanmeirhaeghe
Willy Laflere
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1984
Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes
PL Hanselaer
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
1984
1983
On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1983
On the dielectric properties of semiconducting materials as obtained from impedance measurements on Schottky barriers
Filip Fransen
Marc Madou
Willy Laflere
Felix Cardon
Walter Gomes
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1983
1982
An experimental study of Ti-pSi MIS type Schottky barriers
PL Hanselaer
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1982
Electron trapping in the oxide layer of MIS-type Al-, Au-, Ag- and Sn-n type GaAs Schottky barriers
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1982
Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments
Roland Vanmeirhaeghe
Willy Laflere
Felix Cardon
A1
Journal Article
in
SOLID-STATE ELECTRONICS
1982
1981
Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layer
Roland Vanmeirhaeghe
Willy Laflere
Yu-Min Li
Felix Cardon
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1981
1980
Investigation of the C-V behaviour of GaAs-metal and GaAs electrolyte contacts under forward bias
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1980
1978
On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal Schottky barriers
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
SURFACE SCIENCE
1978
Study of the Schottky barrier at the N- and P-type indium phosphide electrode/electrolyte interface
A.-M. Van Wezemael
Willy Laflere
Felix Cardon
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1978
1976
On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
SURFACE SCIENCE
1976
1974
On the differential capacitance of the n- and p-type gallium arsenide electrode
Willy Laflere
Felix Cardon
Walter Gomes
A1
Journal Article
in
SURFACE SCIENCE
1974
Hydrogen passivation caused by 'soft' sputter etch cleaning of Si. Materials Research Society, Sympos. Proceedings, 1994, nr. 337, pp. 657-662, 4 figg.
AS VERCAEMST
Roland L Van Meirhaeghe
Willy Laflere
Felix Cardon
C1
Conference