Research Explorer

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Researcher

Willy Laflere

Publications & Research Data

Awards & Distinctions

55 Results

1997

Influence of the growth conditions on the properties of CaS : Eu electroluminescent thin films

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

1995

A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky contacts due to mechanical polishing

J.L. EveraertRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A detailed XPS study of the rare earth compounds EuS and EuF3

Rita VercaemstDirk PoelmanLucien FiermansRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

An XPS study of the dopants’ valence states and the composition of CaS1−xSex:Eu and SrS1-xSex:Ce thin film electroluminescent devices

Rita VercaemstDirk PoelmanRoland VanmeirhaegheLucien FiermansWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.

Roland VanmeirhaegheLieve GoubertLucien FiermansWilly LaflereFelix CardonPeter De DobbelaerePeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS

Hydrogen passivation caused by 'soft' sputter etch cleaning of Si

An VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

The influence of Se-coevaporation on the emission spectra of CaS:Eu and SrS:Ce thin film electroluminescent devices

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

1994

Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Thin film electroluminescence in SrS:Ce: the quest for blue light

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A4 Journal Article in BELVAC NEWS

XPS study of TbF3 and TbOF centres in ZnS

J Van Den BosscheKristiaan NeytsPatrick De VisschereDorina CorlatanHerman PauwelsRita VercaemstLucien FiermansDirk PoelmanRoland VanmeirhaegheWilly Laflere et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

1993

Effect of moisture on performance of SrS:Ce thin film electroluminescent devices

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

An VercaemstRoland VanmeirhaegheWilly LaflereFelix CardonWilmert De BosscherR.J. Schreutelkamp

A1 Journal Article in SOLID-STATE ELECTRONICS

On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n‐GaAs contacts

Ronald Van De WalleRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Tunnel oxides grown by rapid thermal oxidation

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in MICROELECTRONIC ENGINEERING

Valency States of rare earth dopants in thin film electroluminescent devices

Rita VercaemstDirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

1992

A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the role of defects in some compound semiconductor (GaAs, InP, CdTe) Schottky Barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

Spectral shifts in thin film electroluminescent devices : an interference effect

Dirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

The influence of Se co-evaporation on the electroluminescent properties of SrS:Ce thin films

Dirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

1991

A study of sputter-induced defects in magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP

Ernest KabushemeyeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

An investigation on the influence of Si surface pre-treatment on the frequency dependence of the impedence of Co/n-Si Schottky barriers

A.L. De LaereRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n‐CdTe contacts

Roland VanmeirhaegheRonald Van De WalleWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen

Wilmert De BosscherRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

1990

Characterisation of CoSi2/- and TiSi2/n-GaAs Schottky barriers

J.L. EveraertRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers

L.M.O. Van Den BergheRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation

A De LaereRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the thermal stability of CoSi2/- and TiSi2/III-V compound (GaAs, InP) Schottky barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

1989

On the influence of a thin thermal oxide layer on MIS-type GaP Schottky diode behaviour

Ernest KabushemeyeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1988

A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi₂/Si Schottky barriers

Wilmert De BosscherRoland VanmeirhaegheA De LaereWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers

Roland VanmeirhaegheLMO Van den BergheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

1987

Large barrier tunnel metal-insulator-semiconductor structures

Peter HanselaerRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the influence of the thin interfacial oxide layer on the electrical and photovoltaic properties of Au/oxide/p-Inp diodes

Y.P. SongRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the temperature dependence of the Mott-Schottky characteristics of high-barrier TI-p-Si metal-insulator-semiconductor diodes

D.U. LootensPeter HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers

DA VandenbrouckeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Study of the electrical and interfacial properties of TiSi2/Si Schottky diodes

Wilmert De BosscherRoland VanmeirhaegheWilly LaflereFelix Cardon

Bookchapter in Le vide, les couches minces

1986

Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers

LMO Van den BergheRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

YP SongRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures

Peter HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The influence of silicide formation on the barrier height of Ti/SI MIS Schottky barriers

Walt De BosscherRoland VanmeirhaeghePeter HanselaerL. CaenepeelWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1985

Characteristics of the RuO₂-n-GaAs Schottky barrier

DA VandenbrouckeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1984

Comment on the paper entitled 'Characterization of the interface states at Al-GaAs Schottky barriers with a thin interface layer'

Roland VanmeirhaegheWilly Laflere

A1 Journal Article in SOLID-STATE ELECTRONICS

Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1983

On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the dielectric properties of semiconducting materials as obtained from impedance measurements on Schottky barriers

Filip FransenMarc MadouWilly LaflereFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1982

An experimental study of Ti-pSi MIS type Schottky barriers

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electron trapping in the oxide layer of MIS-type Al-, Au-, Ag- and Sn-n type GaAs Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

1981

Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layer

Roland VanmeirhaegheWilly LaflereYu-Min LiFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1980

Investigation of the C-V behaviour of GaAs-metal and GaAs electrolyte contacts under forward bias

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1978

On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Study of the Schottky barrier at the N- and P-type indium phosphide electrode/electrolyte interface

A.-M. Van WezemaelWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

1976

On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1974

On the differential capacitance of the n- and p-type gallium arsenide electrode

Willy LaflereFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Hydrogen passivation caused by 'soft' sputter etch cleaning of Si. Materials Research Society, Sympos. Proceedings, 1994, nr. 337, pp. 657-662, 4 figg.

AS VERCAEMSTRoland L Van MeirhaegheWilly LaflereFelix Cardon