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Researcher
Walter Gomes
Profile
Projects
Publications
Activities
Awards & Distinctions
64
Results
2006
Defect luminescence at n-GaN electrodes : a comparative study between n-GaN grown on sapphire substrates and on Si substrates
Inge Huygens
Walter Gomes
Katrien Strubbe
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2006
2005
On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces
Katrien Strubbe
Walter Gomes
Inge Huygens
C1
Conference
2005
Photocurrent multiplication at n-GaN electrodes in formic acid solutions
Inge Huygens
Walter Gomes
Katrien Strubbe
A1
Journal Article
in
ELECTROCHIMICA ACTA
2005
2003
Subbandgap photoluminescence and electroluminescence at n-GaN electrodes in aqueous solutions
Inge Huygens
Walter Gomes
Antoon Theuwis
Katrien Strubbe
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2003
2002
A (photo-)electrochemical study on n-GaN in aqueous solutions
Inge Huygens
Antoon Theuwis
Walter Gomes
Katrien Strubbe
P1
Conference
2002
A photoelectrochemical study of InxGa1-xN films
Antoon Theuwis
Katrien Strubbe
Liesbet Depestel
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2002
Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl- ions.
Inge Huygens
Antoon Theuwis
Walter Gomes
Katrien Strubbe
A1
Journal Article
in
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
2002
Photoluminescence and electroluminescence as tools to investigate recombination processes at n-GaN electrodes in contact with aqueous electrolyte solutions
Katrien Strubbe
Inge Huygens
Antoon Theuwis
Walter Gomes
C1
Conference
2002
2001
A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).
Stefaan Forment
Roland Vanmeirhaeghe
An De Vrieze
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2001
A photoelectrochemical study of InxGa1-xN films
Antoon Theuwis
Katrien Strubbe
Walter Gomes
C1
Conference
2001
Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers : influence of surface composition upon the barrier height
An De Vrieze
Katrien Strubbe
Walter Gomes
S FORMENT
Roland Vanmeirhaeghe
A1
Journal Article
in
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
2001
Wet etching of III-V semiconductors
Walter Gomes
Bookchapter
in
Handbook of advanced electronic and photonic materials
2001
Wet etching of III-V semiconductors
Walter Gomes
A1
Journal Article
in
Semiconductors and Semimetals
2001
2000
Electrochemistry and photoetching of n-GaN
Inge Huygens
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2000
On the electrochemical impedance of blocking semiconductor vertical bar electrolyte contacts
Zeger Hens
Walter Gomes
A1
Journal Article
in
ACH-MODELS IN CHEMISTRY
2000
Photoanodic dissolution of n-InP : an electrochemical impedance study
Zeger Hens
Walter Gomes
A1
Journal Article
in
JOURNAL OF PHYSICAL CHEMISTRY B
2000
1999
Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions
Antoon Theuwis
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1999
Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed
Katrien Strubbe
Philippe Vereecken
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1999
On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte, part 1 : analytical description of the frequency dispersion
Zeger Hens
Walter Gomes
A1
Journal Article
in
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
1999
On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte, part 2 : experimental study of the factors influencing the frequency dispersion
Zeger Hens
Walter Gomes
A1
Journal Article
in
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
1999
The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example
Zeger Hens
Walter Gomes
A1
Journal Article
in
JOURNAL OF PHYSICAL CHEMISTRY B
1999
1998
Elektrochemische reductie van koperionen aan galliumarsenide-éénkristallen en eigenschappen van de gevormde GaAs/Cu-fasegrenzen
Philippe Vereecken
Walter Gomes
Dissertation
1998
The electrochemical behavior of p-type (100) GaAs in copper sulfate solution : influence of surface conditions
PM VEREECKEN
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1998
The electrochemical impedance of reversible semiconductor electrodes : the n-InP/methylviologen electrode as an example
Zeger Hens
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1998
1997
A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP
Antoon Theuwis
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1997
An improved procedure for the processing of chronoamperometric data : application to the electrodeposition of Cu upon (100) n-GaAs
PM VEREECKEN
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1997
Electrochemical impedance spectroscopy at semiconductor electrodes : the recombination resistance revisited
Zeger Hens
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1997
On the diffusion impedance at semiconductor electrodes
Zeger Hens
Walter Gomes
A1
Journal Article
in
JOURNAL OF PHYSICAL CHEMISTRY B
1997
1996
Chemical and electrochemical interaction of acidic H2O2 solutions with (100) InP
Antoon Theuwis
IE VERMEIR
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1996
Electrochemical behaviour of (1 0 0) GaAs in copper(II)-containing solutions
PM VEREECKEN
Fernand Vanden Kerchove
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1996
Electrochemical reduction vs, vapour deposition for n-GaAs/Cu Schottky-barrier formation : a comparative study
Philippe Vereecken
GM VANALME
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS
1996
Impedance spectroscopy at semiconductor electrodes : review and recent developments
Walter Gomes
D VANMAEKELBERGH
A1
Journal Article
in
ELECTROCHIMICA ACTA
1996
Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface
Philippe Verpoort
Inge Vermeir
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1996
The etching of InP by acidic iodine solutions : a kinetic and electrochemical study
Inge Vermeir
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1996
1995
Etching profiles at InP mask edges : some fundamental aspects
Inge Vermeir
Walter Gomes
Peter Van Daele
C3
Conference
1995
Fundamental-study on th selective etching of Alo.25Gao.75As versus GaAs in acidic iodine solutions.
Philippe Verpoort
Inge Vermeir
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1995
Mechanismen van chemische en (foto-)elektrochemische reacties aan III-V halfgeleideroppervlakken
Katrien Strubbe
Walter Gomes
Dissertation
1995
Some fundamental-aspects of profile etching at INP surfaces
Inge Vermeir
Walter Gomes
Peter Van Daele
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1995
1994
ON THE ETCHING OF INP IN ALKALINE K3FE(CN)6 SOLUTIONS
IE VERMEIR
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1994
1993
An electrochemical investigation on the need for using methanol as a solvent in semiconductor etching
Katrien Strubbe
Walter Gomes
C1
Conference
1993
BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS : A FUNDAMENTAL-STUDY ON GAP, 1 : ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1993
BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS : A FUNDAMENTAL-STUDY ON GAP, 2 : INTERACTION BETWEEN CHEMICAL AND ANODIC ETCHING OF P-TYPE GAP
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1993
THE ANODIC-DISSOLUTION OF INP STUDIED BY THE OPTOELECTRICAL IMPEDANCE METHOD, 2 : INTERACTION BETWEEN ANODIC AND CHEMICAL ETCHING OF INP IN IODIC ACID-SOLUTIONS
IE VERMEIR
Walter Gomes
BH ERNE
D VANMAEKELBERGH
A1
Journal Article
in
ELECTROCHIMICA ACTA
1993
THE EFFECT OF HIGH LICL CONCENTRATIONS UPON THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE N-GAAS/FE2+ ELECTRODE
Katrien Strubbe
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1993
1992
(PHOTO)ELECTROCHEMISTRY : A SUITABLE TOOL FOR INVESTIGATING WET ETCHING PROCESSES ON III-V SEMICONDUCTORS
HH GOOSSENS
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1992
ELECTROCHEMICAL AND ETCHING BEHAVIOR OF INP SINGLE-CRYSTALS IN IODIC ACID-SOLUTIONS
IE VERMEIR
HH GOOSSENS
Fernand Vanden Kerchove
Walter Gomes
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
1992
THE ROLE OF WATER ACTIVITY IN THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE GAP/FE2+ ELECTRODE
Katrien Strubbe
HH GOOSSENS
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1992
1990
Studie van (foto-)anodische reacties aan de galliumarsenide-elektrode in waterig, organisch en gemengd milieu
Stefaan Lingier
Walter Gomes
Dissertation
1990
1989
Studie van de invloed van structuurdefecten op het (foto)-elektrochemisch gedrag van mono- en polykristallijn silicium
Geert Vercruysse
Walter Gomes
Wilfried Rigole
Dissertation
1989
1985
A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1985
Studie van het elektrochemisch en fotoëlektrochemisch gedrag van n- en p-type silicium-éénkristallen in methanol
Philip Brondeel
Walter Gomes
Dissertation
1985
1984
Onderzoek naar het mechanisme van fotoëlektrochemische reacties aan n-type-halfgeleiderelektroden
Daniël Vanmaekelbergh
Walter Gomes
Dissertation
1984
1982
Investigation on photoelectrochemical cells based upon silicon/methanol interfaces, part 1 : n-type Si
Philip Brondeel
Marc Madou
Walter Gomes
Felix Cardon
A1
Journal Article
in
SOLAR ENERGY MATERIALS
1982
Investigation on photoelectrochemical cells based upon silicon/methanol interfaces, part 2 : p-type Si
Marc Madou
Philip Brondeel
Walter Gomes
P Hanselaer
Felix Cardon
A1
Journal Article
in
SOLAR ENERGY MATERIALS
1982
1980
Effects of thin oxide layers on the characteristics of GaAs MIS solar cells
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
1980
Investigation of the C-V behaviour of GaAs-metal and GaAs-electrolyte contacts under forward bias
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
1980
1979
Influence of the surface pretreatment on the photocurrent-voltage characteristics and the spectral response of the N-GaAs-electrolyte interface
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS
1979
Photocurrent oscillations at the n-GaAs/electrolyte interface
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1979
1978
On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal Schottky barriers
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
SURFACE SCIENCE
1978
Some Electrochemical Processes at the n- and p-InP Electrodes
Alfons Vervaet
Walter Gomes
Felix Cardon
A1
Journal Article
in
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
1978
1976
On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance
Roland Vanmeirhaeghe
EC Dutoit
Felix Cardon
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1976
On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes
Willy Laflere
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
SURFACE SCIENCE
1976
1975
Investigation on frequency-dependence of impedance of nearly ideally polarizable semiconductor electrodes CDSE, CDS and TIO₂
EC Dutoit
Roland Vanmeirhaeghe
Felix Cardon
Walter Gomes
A1
Journal Article
in
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS
1975
On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance
Roland Vanmeirhaeghe
EC Dutoit
Felix Cardon
Walter Gomes
A1
Journal Article
in
ELECTROCHIMICA ACTA
1975