Research Explorer

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Researcher

Walter Gomes

Publications & Research Data

Awards & Distinctions

124 Results

2006

Defect luminescence at n-GaN electrodes : a comparative study between n-GaN grown on sapphire substrates and on Si substrates

Inge HuygensWalter GomesKatrien Strubbe

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2005

On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces

Katrien StrubbeWalter GomesInge Huygens

Photocurrent multiplication at n-GaN electrodes in formic acid solutions

Inge HuygensWalter GomesKatrien Strubbe

A1 Journal Article in ELECTROCHIMICA ACTA

2003

Subbandgap photoluminescence and electroluminescence at n-GaN electrodes in aqueous solutions

Inge HuygensWalter GomesAntoon TheuwisKatrien Strubbe

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2002

A (photo-)electrochemical study on n-GaN in aqueous solutions

Inge HuygensAntoon TheuwisWalter GomesKatrien Strubbe

A photoelectrochemical study of InxGa1-xN films

Antoon TheuwisKatrien StrubbeLiesbet DepestelWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl- ions.

Inge HuygensAntoon TheuwisWalter GomesKatrien Strubbe

A1 Journal Article in PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Photoluminescence and electroluminescence as tools to investigate recombination processes at n-GaN electrodes in contact with aqueous electrolyte solutions

Katrien StrubbeInge HuygensAntoon TheuwisWalter Gomes

2001

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).

Stefaan FormentRoland VanmeirhaegheAn De VriezeKatrien StrubbeWalter Gomes

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A photoelectrochemical study of InxGa1-xN films

Antoon TheuwisKatrien StrubbeWalter Gomes

Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers : influence of surface composition upon the barrier height

An De VriezeKatrien StrubbeWalter GomesS FORMENTRoland Vanmeirhaeghe

A1 Journal Article in PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Wet etching of III-V semiconductors

Bookchapter in Handbook of advanced electronic and photonic materials

Wet etching of III-V semiconductors

A1 Journal Article in Semiconductors and Semimetals

2000

Electrochemistry and photoetching of n-GaN

Inge HuygensKatrien StrubbeWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

On the electrochemical impedance of blocking semiconductor vertical bar electrolyte contacts

Zeger HensWalter Gomes

A1 Journal Article in ACH-MODELS IN CHEMISTRY

Photoanodic dissolution of n-InP : an electrochemical impedance study

Zeger HensWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICAL CHEMISTRY B

1999

Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions

Antoon TheuwisWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed

Katrien StrubbePhilippe VereeckenWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte, part 1 : analytical description of the frequency dispersion

Zeger HensWalter Gomes

A1 Journal Article in PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte, part 2 : experimental study of the factors influencing the frequency dispersion

Zeger HensWalter Gomes

A1 Journal Article in PHYSICAL CHEMISTRY CHEMICAL PHYSICS

The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example

Zeger HensWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICAL CHEMISTRY B

1998

Elektrochemische reductie van koperionen aan galliumarsenide-éénkristallen en eigenschappen van de gevormde GaAs/Cu-fasegrenzen

Philippe VereeckenWalter Gomes

The electrochemical behavior of p-type (100) GaAs in copper sulfate solution : influence of surface conditions

PM VEREECKENKatrien StrubbeWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

The electrochemical impedance of reversible semiconductor electrodes : the n-InP/methylviologen electrode as an example

Zeger HensWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

1997

A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP

Antoon TheuwisWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

An improved procedure for the processing of chronoamperometric data : application to the electrodeposition of Cu upon (100) n-GaAs

PM VEREECKENKatrien StrubbeWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Electrochemical impedance spectroscopy at semiconductor electrodes : the recombination resistance revisited

Zeger HensWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

On the diffusion impedance at semiconductor electrodes

Zeger HensWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICAL CHEMISTRY B

1996

Chemical and electrochemical interaction of acidic H2O2 solutions with (100) InP

Antoon TheuwisIE VERMEIRWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Electrochemical behaviour of (1 0 0) GaAs in copper(II)-containing solutions

PM VEREECKENFernand Vanden KerchoveWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

Electrochemical reduction vs, vapour deposition for n-GaAs/Cu Schottky-barrier formation : a comparative study

Philippe VereeckenGreet VanalmeRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS

Impedance spectroscopy at semiconductor electrodes : review and recent developments

Walter GomesD VANMAEKELBERGH

A1 Journal Article in ELECTROCHIMICA ACTA

Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface

Philippe VerpoortInge VermeirWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

The etching of InP by acidic iodine solutions : a kinetic and electrochemical study

Inge VermeirWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1995

Etching profiles at InP mask edges : some fundamental aspects

Inge VermeirWalter GomesPeter Van Daele

Fundamental-study on th selective etching of Alo.25Gao.75As versus GaAs in acidic iodine solutions.

Philippe VerpoortInge VermeirWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Mechanismen van chemische en (foto-)elektrochemische reacties aan III-V halfgeleideroppervlakken

Katrien StrubbeWalter Gomes

Some fundamental-aspects of profile etching at INP surfaces

Inge VermeirWalter GomesPeter Van Daele

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1994

ON THE ETCHING OF INP IN ALKALINE K3FE(CN)6 SOLUTIONS

IE VERMEIRWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

1993

An electrochemical investigation on the need for using methanol as a solvent in semiconductor etching

Katrien StrubbeWalter Gomes

BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS : A FUNDAMENTAL-STUDY ON GAP, 1 : ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP

Katrien StrubbeWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS : A FUNDAMENTAL-STUDY ON GAP, 2 : INTERACTION BETWEEN CHEMICAL AND ANODIC ETCHING OF P-TYPE GAP

Katrien StrubbeWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

THE ANODIC-DISSOLUTION OF INP STUDIED BY THE OPTOELECTRICAL IMPEDANCE METHOD, 2 : INTERACTION BETWEEN ANODIC AND CHEMICAL ETCHING OF INP IN IODIC ACID-SOLUTIONS

IE VERMEIRWalter GomesBH ERNED VANMAEKELBERGH

A1 Journal Article in ELECTROCHIMICA ACTA

THE EFFECT OF HIGH LICL CONCENTRATIONS UPON THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE N-GAAS/FE2+ ELECTRODE

Katrien StrubbeWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

1992

(PHOTO)ELECTROCHEMISTRY : A SUITABLE TOOL FOR INVESTIGATING WET ETCHING PROCESSES ON III-V SEMICONDUCTORS

HH GOOSSENSWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

ELECTROCHEMICAL AND ETCHING BEHAVIOR OF INP SINGLE-CRYSTALS IN IODIC ACID-SOLUTIONS

IE VERMEIRHH GOOSSENSFernand Vanden KerchoveWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

THE ROLE OF WATER ACTIVITY IN THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE GAP/FE2+ ELECTRODE

Katrien StrubbeHH GOOSSENSWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

1990

An impedance study of electrochemically induced surface states at the p-GaP/electrolyte interface

H.H. GoossensWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Studie van (foto-)anodische reacties aan de galliumarsenide-elektrode in waterig, organisch en gemengd milieu

Stefaan LingierWalter Gomes

1989

Studie van de invloed van structuurdefecten op het (foto)-elektrochemisch gedrag van mono- en polykristallijn silicium

Geert VercruysseWalter GomesWilfried Rigole

1987

A comparison of anodic charge-transfer kinetics between dark p-type and illuminated n-type GaP/Fe(CN)4-1 6 interfaces

Daniel VanmaekelberghLu Shou YunWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

A quantitative analysis of photoinduced capacitance peaks in the impedance of the n-GaAs electrode

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

The participation of surface decomposition intermediates in charge transfer processes at dark p-type GaP/electrolyte interfaces

Lu Shou YunDaniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

1986

Studies on the n-GaAs photoanode in aqueous electrolytes : 3. Recombination resistance

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

1985

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Effects of anodic polarization upon electrochemically grown oxide films on p-Si, studied by ellipsometric and capacitance measurements

J.J. MercierFilip FransenFelix CardonMarc MadouWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Studie van het elektrochemisch en fotoëlektrochemisch gedrag van n- en p-type silicium-éénkristallen in methanol

Philip BrondeelWalter Gomes

Studies on the n-GaAs photoanode in aqueous electrolytes : 1. Behaviour of the photocurrent in the presence of a stabilizing agent

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Studies on the n-GaAs photoanode in aqueous electrolytes : 2. Differential capacitance behaviour

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

1984

Onderzoek naar het mechanisme van fotoëlektrochemische reacties aan n-type-halfgeleiderelektroden

Daniël VanmaekelberghWalter Gomes

1983

Elucidation of the current-doubling mechanism at the ZnO anode by interpretation of photo-electrochemical noise data

Felix CardonWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

On the dielectric properties of semiconducting materials as obtained from impedance measurements on Schottky barriers

Filip FransenMarc MadouWilly LaflereFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Relationship between stabilization and photocurrent at n-type semiconductor electrodes on the basis of a model including surface recombination through decomposition intermediates

Daniel VanmaekelberghWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I

Role of decomposition-induced and other surface states in the photoelectrochemical kinetics of n-GaP/Fe2+

Daniel VanmaekelberghWilfried RigoleWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I

The photoelectrochemical etching of TiO2 single crystals

A. PraetFernand Vanden KerckhoveWalter GomesFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

1982

Anodic oxidation of p-type silicon in methanol as compared to glycol

Marc MadouWalter GomesFilip FransenFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Discussion of 'Equivalent circuit analysis of the impedance response of semiconductor/electrolyte/counterelectrode cells' [J. F. McCann and S. P. S. Badwal (pp. 551–559, Vol. 129, No. 3)]

Walter GomesFelix Cardon

Electron energy levels in semiconductor electrochemistry

Walter GomesFelix Cardon

A1 Journal Article in PROGRESS IN SURFACE SCIENCE

Investigation on photoelectrochemical cells based upon silicon/methanol interfaces, part 1 : n-type Si

Philip BrondeelMarc MadouWalter GomesFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

Investigation on photoelectrochemical cells based upon silicon/methanol interfaces, part 2 : p-type Si

Marc MadouPhilip BrondeelWalter GomesP HanselaerFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

Investigation on photoelectrochemical cells based upon silicon/methanol interfaces. Part 1 : n-type Si

Philip BrondeelMarc MadouWalter Gomes

A1 Journal Article in SOLAR ENERGY MATERIALS

Investigation on photoelectrochemical cells based upon silicon/methanol interfaces. Part 2 : p-type Si

Marc MadouPhilip BrondeelWalter GomesPeter HanselaerFelix Cardon

A1 Journal Article in SOLAR ENERGY MATERIALS

Study of stabilization and surface recombination on n-GaP photoelectrodes : mechanisms and interrelation

D. VanmaeckelbergWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1981

Competing photoelectrochemical reactions on semiconductor electrodes

Walter GomesF. Van OvermeireD. VanmaeckelbergGuido Vanden KerckhoveFelix Cardon

Bookchapter in Photoeffects at Semiconductor-Electrolyte Interfaces

Exploratory investigation on the semiconductor properties of Li-doped CoO by electrochemical measurements

G. Van SteertegemWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1980

Competing photoelectrochemical reactions on semiconductor electrodes

F. Van OvermeireWalter GomesFernand Vanden KerckhoveFelix Cardon

Effects of thin oxide layers on the characteristics of GaAs MIS solar cells

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Investigation of the C-V behaviour of GaAs-metal and GaAs electrolyte contacts under forward bias

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Investigation of the C-V behaviour of GaAs-metal and GaAs-electrolyte contacts under forward bias

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Investigation on the kinetics of electroreduction processes at dark TiO2 and SrTiO3 single crystal semiconductor electrodes

J. VandermolenWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Light-intensity dependence in the kinetics of normal-GaP photoelectrode stabilization

F. Van OvermeireFernand Vanden KerckhoveWalter GomesFelix Cardon

A1 Journal Article in BULLETIN DES SOCIETES CHIMIQUES BELGES

On the kinetics of semiconductor-electrode stabilization

Felix CardonWalter GomesFernand Vanden KerckhoveDaniel VanmaekelberghFrank Van Overmeire

A1 Journal Article in FARADAY DISCUSSIONS

1979

Electrochemical and photoelectrochemical properties of the semiconducting SrTiO3 single crystal electrode

Fernand Vanden KerckhoveJ. VandermolenWalter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the influence of the surface pretreatment on the photocurrent-voltage characteristics and the spectral response of the n-GaAs-electrolyte interface

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Photocurrent oscillations at the n-GaAs/electrolyte interface

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

1978

A comparative study of electrochemical and photoelectrochemical reactions at semiconducting oxidized Ti and TiO2 single crystal electrodes in view of energy conversion applications

E.C. DutoitFelix CardonFernand Vanden KerckhoveWalter Gomes

A1 Journal Article in JOURNAL OF APPLIED ELECTROCHEMISTRY

Cyclic-voltammetric study of n- and p-type GaP electrodes

M.J. MadouFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot

Felix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Some electrochemical processes at the n- and p-InP electrodes

A VervaetWalter GomesFelix Cardon

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

1977

Anodic processes at the n- and p-type GaP electrodes

M.J. MadouFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Impedance measurements at the N- and P-type GaP single crystal electrode

M.J. MadouFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1976

Electrochemical properties of the semiconducting TiO2 (rutile) single crystal electrode

E.C. DutoitFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Electrochemical reactions involving holes at the illuminated TiO2 (rutile) single crystal electrode

E.C. DutoitFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheEC DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheE.C. DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1975

Investigation on frequency-dependence of impedance of nearly ideally polarizable semiconductor electrodes CDSE, CDS and TIO₂

EC DutoitRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheEC DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

On the interpretation of Mott-Schottky plots determined at semiconductor/electrolyte systems

Roger De GryseWalter GomesFelix CardonJoost Vennik

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1974

Electrochemical reactions at the illuminated CdSe anode

R.A.L. Vanden BergheWalter GomesFelix Cardon

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

Electron transfer involving tunneling from surface states at the dark anodic CdS/indifferent electrolyte interface

R.A.L. Vanden BergheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the differential capacitance of the n- and p-type gallium arsenide electrode

Willy LaflereFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1973

On the electrochemical behaviour of the hexacyanoferrate redox system at different semiconductor electrodes

Walter GomesFelix Cardon

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

Some aspects of the anodic behaviour of CdS single crystals in indifferent electrolyte solutions

R.A.L. Vanden BergheWalter GomesFelix Cardon

A2 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

1972

A comparative study of electron injection into ZnO, CdS single crystal anodes

R.A.L. Vanden BergheWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

On the mechanism of the electrochemical reduction of iodine at the cadmium sulfide electrode

Felix CardonWalter Gomes

A1 Journal Article in ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT

1971

Experiments on the zinc oxide/electrolyte interface during anodic oxidation reactions under pulsed illumination

Felix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

Study of dye sensitization effects at the ZnO anode by noise and pulsed light measurements

Walter GomesFelix Cardon

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

Study of noise associated with oxidation reactions at the illuminated single crystal zinc oxide anode

Walter GomesFelix Cardon

A1 Journal Article in JOURNAL OF SOLID STATE CHEMISTRY

1970

Electrochemical processes at the V2O5 surface under anodic bias

A1 Journal Article in SURFACE SCIENCE

Surface states at the single crystal zinc oxide/electrolyte interface : II. Noise measurements

Felix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE

Surface states at the single crystal zinc oxide/electrolyte interface : I. Impedance measurements

Walter GomesFelix Cardon

A4 Journal Article in BERICHTE DER BUNSENGESELLSCHAFT FÜR PHYSIKALISCHE CHEMIE

1969

Chemical reactions involving anodic processes on a single-crystal zinc oxide catalyst

Walter GomesT. FreundS.R. Morrison

A1 Journal Article in SURFACE SCIENCE

Electrochemical methods for investigating catalysis by semiconductors

T. FreundWalter Gomes

A1 Journal Article in CATALYSIS REVIEWS

1968

Chemical reactions involving holes at the zinc oxide single crystal anode

Walter GomesT. FreundS.R. Morrison

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

1967

Réactions partielles et complètes dans les cristaux de chlorure de potassium dopés

A2 Journal Article in COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES

1966

Reaction between hydrogen and potassium chloride crystals doped with nitrite and nitrate

A1 Journal Article in TRANSACTIONS OF THE FARADAY SOCIETY

Spectrophotometric determination of nitrite and nitrate in doped potassium chloride crystals

A1 Journal Article in ZEITSCHRIFT FUR ANALYTISCHE CHEMIE FRESENIUS

1965

La formation de OH- par réduction des halogénures alcalins dopés au nitrite

Walter GomesEtienne Boesman

A1 Journal Article in COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES

1963

De reaktie van zilvergedopeerde alkalihalogenide-kristallen met waterstof

A2 Journal Article in BULLETIN DE LA SOCIETE BELGE DE PHYSIQUE

1961

Definition of rate constant and activation energy in solid state reactions

A1 Journal Article in NATURE

Distribution of silver ions in melt-grown alkali halides

A1 Journal Article in JOURNAL OF CHEMICAL PHYSICS