Research Explorer

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Researcher

Srinivasan Ashwyn Srinivasan

29 Results

2021

56 Gb/s NRZ O-band hybrid BiCMOS-Silicon photonics receiver using Ge/si avalanche photodiode

Srinivasan Ashwyn SrinivasanJoris LambrechtDavide GuermandiSebastien LardenoisMathias BercianoPhilippe AbsilJohan BauwelinckXin YinMarianna PantouvakiJoris Van Campenhout

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

2020

Highly sensitive 56 Gbps NRZ O-band BiCMOS-silicon photonics receiver using a Ge/Si avalanche photodiode

Srinivasan Ashwyn SrinivasanJoris LambrechtM. BercianoS. LardenoisP. AbsilJohan BauwelinckXin YinM. PantouvakiJ. Van Campenhout

2019

104 Gbaud OOK and PAM-4 transmission over 1km of SMF using a silicon photonics transmitter with quarter-rate electronics

Jochem VerbistMads LillieholmJoris Van KerrebrouckSrinivasan Ashwyn SrinivasanPeter De HeynJoris Van CampenhoutMichael GaliliLeif K. OxenloweXin YinJohan Bauwelinck et al.

4:1 silicon photonic serializer for data center interconnects demonstrating 104 Gbaud OOK and PAM4 transmission

Jochem VerbistMichael VanhoeckeMads LillieholmSrinivasan Ashwyn SrinivasanPeter De HeynJoris Van CampenhoutMichael GaliliLeif K. OxenloweXin YinJohan Bauwelinck et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

70 Gb/s low-power DC-coupled NRZ differential electro-absorption modulator driver in 55 nm SiGe BiCMOS

Hannes RamonJoris LambrechtJochem VerbistMichael VanhoeckeSrinivasan Ashwyn SrinivasanPeter De HeynJoris Van CampenhoutPeter OssieurXin YinJohan Bauwelinck

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

Real-time and DSP-free 128 Gb/s PAM-4 link using a binary driven silicon photonic transmitter

Jochem VerbistJoris LambrechtMichiel VerplaetseSrinivasan Ashwyn SrinivasanPeter De HeynTimothy De KeulenaerRamses PiercoArno VynckeJoris Van CampenhoutXin Yin et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

2018

70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS

Hannes RamonJoris LambrechtJochem VerbistMichael VanhoeckeSrinivasan Ashwyn SrinivasanPeter De HeynJoris Van CampenhoutPeter OssieurXin YinJohan Bauwelinck

Advanced Germanium devices for optical interconnects

Srinivasan Ashwyn SrinivasanDries Van ThourhoutJoris Van Campenhout

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Srinivasan Ashwyn SrinivasanC. PorretM. PantouvakiY. ShimuraPieter GeiregatR. LooJ. Van CampenhoutDries Van Thourhout

A1 Journal Article in APPLIED PHYSICS LETTERS

DAC-less and DSP-free 112 Gb/s PAM-4 transmitter using two parallel electroabsorption modulators

Jochem VerbistJoris LambrechtMichiel VerplaetseJoris Van KerrebrouckSrinivasan Ashwyn SrinivasanPeter De HeynTimothy De KeulenaerXin YinGuy TorfsJoris Van Campenhout et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers

Srinivasan Ashwyn SrinivasanC PorretE VissersPieter GeiregatDries Van ThourhoutR LooM PantouvakiJ Van Campenhout

Real-time 100 Gb/s NRZ and EDB transmission with a GeSi electroabsorption modulator for short-reach optical interconnects

Jochem VerbistMichiel VerplaetseSrinivasan Ashwyn SrinivasanJoris Van KerrebrouckP. De HeynP. AbsilT. De KeulenaerR. PiercoA. VynckeGuy Torfs et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

2017

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Srinivasan Ashwyn SrinivasanC. PorretM. PantouvakiY. ShimuraPieter GeiregatR. LooJ. Van CampenhoutDries Van Thourhout

DAC-less and DSP-free PAM-4 transmitter at 112 Gb/s with two parallel GeSi electro-absorption modulators

Jochem VerbistJoris LambrechtMichiel VerplaetseJoris Van KerrebrouckSrinivasan Ashwyn SrinivasanP. De HeynTimothy De KeulenaerXin YinJ. Van CampenhoutGünther Roelkens et al.

First real-time 100-Gb/s NRZ-OOK transmission over 2 km with a silicon photonic electro-absorption modulator

Jochem VerbistMichiel VerplaetseSrinivasan Ashwyn SrinivasanPeter De HeynTimothy De KeulenaerRamses PiercoRenato VaernewyckArno VynckePhilippe AbsilGuy Torfs et al.

First real-time 100-Gb/s NRZ-OOK transmission over 2 km with a silicon photonic electro-absorption modulator

Jochem VerbistMichiel VerplaetseSrinivasan Ashwyn SrinivasanP. De HeynTimothy De KeulenaerRamses PiercoRenato VaernewyckArno VynckeP. AbsilGuy Torfs et al.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Yuji YamamotoLi-Wei NienGiovanni CapelliniMichele VirgilioIoan CostinaMarkus Andreas SchubertWinfried SeifertSrinivasan Ashwyn SrinivasanRoger LooGiordano Scappucci et al.

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Real-time 100 Gb/s NRZ-OOK transmission with a silicon photonics GeSi electro-absorption modulator

Jochem VerbistMichiel VerplaetseSrinivasan Ashwyn SrinivasanP. De HeynTimothy De KeulenaerRenato VaernewyckRamses PiercoArno VynckeP. VerheyenS. Balakrishnan et al.

Reduction of optical bleaching in phosphorus doped ge layer on si

Srinivasan Ashwyn SrinivasanC. PorretM. PantouvakiY. ShimuraPieter GeiregatR. LooJ. Van CampenhoutDries Van Thourhout

Reliable 50Gb/s silicon photonics platform for next-generation data center optical interconnects

P. AbsilK. CroesA. LesniewskaP. De HeynY. BanB. SnyderJ. De CosterF. FodorV. SimonsS. Balakrishnan et al.

Ultra-dense 16x56Gb/s NRZ GeSi EAM-PD arrays coupled to multicore fiber for short-reach 896Gb/s optical links

P. De HeynV. I. KoppSrinivasan Ashwyn SrinivasanP. VerheyenJ. ParkM. S. WlodawskiJ. SingerD. NeugroschlB. SnyderS. Balakrishnan et al.

2016

56 Gb/s Germanium waveguide electro-absorption modulator

Srinivasan Ashwyn SrinivasanMarianna PantouvakiShashank GuptaHongtao ChenPeter VerheyenGuy LepageGünther RoelkensKrishna SaraswatDries Van ThourhoutPhilippe Absil et al.

A1 Journal Article in JOURNAL OF LIGHTWAVE TECHNOLOGY

Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers

Yosuke ShimuraSrinivasan Ashwyn SrinivasanRoger Loo

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

Yosuke ShimuraSrinivasan Ashwyn SrinivasanDries Van ThourhoutRik Van DeunMarianna PantouvakiJoris Van CampenhoutRoger Loo

A1 Journal Article in THIN SOLID FILMS

Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

Srinivasan Ashwyn SrinivasanM PantouvakiP VerheyenG LepageP AbsilJ Van CampenhoutDries Van Thourhout

A1 Journal Article in APPLIED PHYSICS LETTERS

High-speed germanium-based waveguide electro-absorption modulator

P. De HeynSrinivasan Ashwyn SrinivasanP. VerheyenR. LooI. De WolfS. BalakrishnanG. LepageDries Van ThourhoutM. PantouvakiP. Absil et al.

2015

50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

S GuptaSrinivasan Ashwyn SrinivasanM PantouvakiHongtao ChenP VerheyenG LepageDries Van ThourhoutGünther RoelkensK SaraswatP Absil et al.

Carrier lifetime assessment in integrated Ge waveguide devices

Srinivasan Ashwyn SrinivasanM PantouvakiP VerheyenG LepageP AbsilJ Van CampenhoutDries Van Thourhout

Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications

Yosuke ShimuraSrinivasan Ashwyn SrinivasanDries Van ThourhoutRik Van DeunMarianna PantouvakiJoris Van CampenhoutRoger Loo