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Researcher
Srinivasan Ashwyn Srinivasan
Profile
Projects
Publications
Activities
Awards & Distinctions
28
Results
2021
56 Gb/s NRZ O-band hybrid BiCMOS-Silicon photonics receiver using Ge/si avalanche photodiode
Srinivasan Ashwyn Srinivasan
Joris Lambrecht
Davide Guermandi
Sebastien Lardenois
Mathias Berciano
Philippe Absil
Johan Bauwelinck
Xin Yin
Marianna Pantouvaki
Joris Van Campenhout
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2021
2020
Highly sensitive 56 Gbps NRZ O-band BiCMOS-silicon photonics receiver using a Ge/Si avalanche photodiode
Srinivasan Ashwyn Srinivasan
Joris Lambrecht
M. Berciano
S. Lardenois
P. Absil
Johan Bauwelinck
Xin Yin
M. Pantouvaki
J. Van Campenhout
P1
Conference
2020
2019
4:1 silicon photonic serializer for data center interconnects demonstrating 104 Gbaud OOK and PAM4 transmission
Jochem Verbist
Michael Vanhoecke
Mads Lillieholm
Srinivasan Ashwyn Srinivasan
Peter De Heyn
Joris Van Campenhout
Michael Galili
Leif K. Oxenlowe
Xin Yin
Johan Bauwelinck
et al.
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2019
70 Gb/s low-power DC-coupled NRZ differential electro-absorption modulator driver in 55 nm SiGe BiCMOS
Hannes Ramon
Joris Lambrecht
Jochem Verbist
Michael Vanhoecke
Srinivasan Ashwyn Srinivasan
Peter De Heyn
Joris Van Campenhout
Peter Ossieur
Xin Yin
Johan Bauwelinck
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2019
Real-time and DSP-free 128 Gb/s PAM-4 link using a binary driven silicon photonic transmitter
Jochem Verbist
Joris Lambrecht
Michiel Verplaetse
Srinivasan Ashwyn Srinivasan
Peter De Heyn
Timothy De Keulenaer
Ramses Pierco
Arno Vyncke
Joris Van Campenhout
Xin Yin
et al.
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2019
2018
70 Gb/s 0.87 pJ/bit GeSi EAM driver in 55 nm SiGe BiCMOS
Hannes Ramon
Joris Lambrecht
Jochem Verbist
Michael Vanhoecke
Srinivasan Ashwyn Srinivasan
Peter De Heyn
Joris Van Campenhout
Peter Ossieur
Xin Yin
Johan Bauwelinck
C1
Conference
2018
Advanced Germanium devices for optical interconnects
Srinivasan Ashwyn Srinivasan
Dries Van Thourhout
Joris Van Campenhout
Dissertation
2018
Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si
Srinivasan Ashwyn Srinivasan
C. Porret
M. Pantouvaki
Y. Shimura
Pieter Geiregat
R. Loo
J. Van Campenhout
Dries Van Thourhout
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2018
DAC-less and DSP-free 112 Gb/s PAM-4 transmitter using two parallel electroabsorption modulators
Jochem Verbist
Joris Lambrecht
Michiel Verplaetse
Joris Van Kerrebrouck
Srinivasan Ashwyn Srinivasan
Peter De Heyn
Timothy De Keulenaer
Xin Yin
Guy Torfs
Joris Van Campenhout
et al.
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2018
High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers
Srinivasan Ashwyn Srinivasan
C Porret
E Vissers
Pieter Geiregat
Dries Van Thourhout
R Loo
M Pantouvaki
J Van Campenhout
C1
Conference
2018
Real-time 100 Gb/s NRZ and EDB transmission with a GeSi electroabsorption modulator for short-reach optical interconnects
Jochem Verbist
Michiel Verplaetse
Srinivasan Ashwyn Srinivasan
Joris Van Kerrebrouck
P. De Heyn
P. Absil
T. De Keulenaer
R. Pierco
A. Vyncke
Guy Torfs
et al.
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2018
2017
Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application
Srinivasan Ashwyn Srinivasan
C. Porret
M. Pantouvaki
Y. Shimura
Pieter Geiregat
R. Loo
J. Van Campenhout
Dries Van Thourhout
P1
Conference
2017
DAC-less and DSP-free PAM-4 transmitter at 112 Gb/s with two parallel GeSi electro-absorption modulators
Jochem Verbist
Joris Lambrecht
Michiel Verplaetse
Joris Van Kerrebrouck
Srinivasan Ashwyn Srinivasan
P. De Heyn
Timothy De Keulenaer
Xin Yin
J. Van Campenhout
Günther Roelkens
et al.
P1
Conference
2017
First real-time 100-Gb/s NRZ-OOK transmission over 2 km with a silicon photonic electro-absorption modulator
Jochem Verbist
Michiel Verplaetse
Srinivasan Ashwyn Srinivasan
Peter De Heyn
Timothy De Keulenaer
Ramses Pierco
Renato Vaernewyck
Arno Vyncke
Philippe Absil
Guy Torfs
et al.
P1
Conference
2017
First real-time 100-Gb/s NRZ-OOK transmission over 2 km with a silicon photonic electro-absorption modulator
Jochem Verbist
Michiel Verplaetse
Srinivasan Ashwyn Srinivasan
P. De Heyn
Timothy De Keulenaer
Ramses Pierco
Renato Vaernewyck
Arno Vyncke
P. Absil
Guy Torfs
et al.
C1
Conference
2017
Photoluminescence of phosphorus atomic layer doped Ge grown on Si
Yuji Yamamoto
Li-Wei Nien
Giovanni Capellini
Michele Virgilio
Ioan Costina
Markus Andreas Schubert
Winfried Seifert
Srinivasan Ashwyn Srinivasan
Roger Loo
Giordano Scappucci
et al.
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2017
Real-time 100 Gb/s NRZ-OOK transmission with a silicon photonics GeSi electro-absorption modulator
Jochem Verbist
Michiel Verplaetse
Srinivasan Ashwyn Srinivasan
P. De Heyn
Timothy De Keulenaer
Renato Vaernewyck
Ramses Pierco
Arno Vyncke
P. Verheyen
S. Balakrishnan
et al.
C3
Conference
2017
Reduction of optical bleaching in phosphorus doped ge layer on si
Srinivasan Ashwyn Srinivasan
C. Porret
M. Pantouvaki
Y. Shimura
Pieter Geiregat
R. Loo
J. Van Campenhout
Dries Van Thourhout
P1
Conference
2017
Reliable 50Gb/s silicon photonics platform for next-generation data center optical interconnects
P. Absil
K. Croes
A. Lesniewska
P. De Heyn
Y. Ban
B. Snyder
J. De Coster
F. Fodor
V. Simons
S. Balakrishnan
et al.
P1
Conference
2017
Ultra-dense 16x56Gb/s NRZ GeSi EAM-PD arrays coupled to multicore fiber for short-reach 896Gb/s optical links
P. De Heyn
V. I. Kopp
Srinivasan Ashwyn Srinivasan
P. Verheyen
J. Park
M. S. Wlodawski
J. Singer
D. Neugroschl
B. Snyder
S. Balakrishnan
et al.
P1
Conference
2017
2016
56 Gb/s Germanium waveguide electro-absorption modulator
Srinivasan Ashwyn Srinivasan
Marianna Pantouvaki
Shashank Gupta
Hongtao Chen
Peter Verheyen
Guy Lepage
Günther Roelkens
Krishna Saraswat
Dries Van Thourhout
Philippe Absil
et al.
A1
Journal Article
in
JOURNAL OF LIGHTWAVE TECHNOLOGY
2016
Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
Yosuke Shimura
Srinivasan Ashwyn Srinivasan
Roger Loo
A1
Journal Article
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2016
Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence
Yosuke Shimura
Srinivasan Ashwyn Srinivasan
Dries Van Thourhout
Rik Van Deun
Marianna Pantouvaki
Joris Van Campenhout
Roger Loo
A1
Journal Article
in
THIN SOLID FILMS
2016
Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy
Srinivasan Ashwyn Srinivasan
M Pantouvaki
P Verheyen
G Lepage
P Absil
J Van Campenhout
Dries Van Thourhout
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2016
High-speed germanium-based waveguide electro-absorption modulator
P. De Heyn
Srinivasan Ashwyn Srinivasan
P. Verheyen
R. Loo
I. De Wolf
S. Balakrishnan
G. Lepage
Dries Van Thourhout
M. Pantouvaki
P. Absil
et al.
P1
Conference
2016
2015
50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform
S Gupta
Srinivasan Ashwyn Srinivasan
M Pantouvaki
Hongtao Chen
P Verheyen
G Lepage
Dries Van Thourhout
Günther Roelkens
K Saraswat
P Absil
et al.
P1
Conference
2015
Carrier lifetime assessment in integrated Ge waveguide devices
Srinivasan Ashwyn Srinivasan
M Pantouvaki
P Verheyen
G Lepage
P Absil
J Van Campenhout
Dries Van Thourhout
P1
Conference
2015
Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications
Yosuke Shimura
Srinivasan Ashwyn Srinivasan
Dries Van Thourhout
Rik Van Deun
Marianna Pantouvaki
Joris Van Campenhout
Roger Loo
C1
Conference
2015