Research Explorer

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Researcher

Ruijun Wang

31 Results

2019

14 - III–V/Si mid-IR photonic integrated circuits

Fabio PavanelloRuijun WangGünther Roelkens

Bookchapter in Mid-infrared optoelectronics : materials, devices, and applications

27 dB gain III–V-on-silicon semiconductor optical amplifier with > 17 dBm output power

Kasper Van GasseRuijun WangGünther Roelkens

A1 Journal Article in OPTICS EXPRESS

High-power III-V-on-silicon semiconductor optical amplifier (>50 mW) for integrated mode-locked lasers

Kasper Van GasseRuijun WangGünther Roelkens

Mid-IR devices and sub-systems based on SOI technology

Fabio PavanelloAnton VasilievRuijun WangMuhammad MuneebAditya MalikRoel BaetsGünther Roelkens

Widely tunable III–V/silicon lasers for spectroscopy in the short-wave infrared

Ruijun WangBahawal HaqAditya MalikAnton VasilievJoris Van CampenhoutRoel BaetsGünther Roelkens

A1 Journal Article in IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

2018

III-V-on-silicon photonic integrated circuits for spectroscopic sensing in the mid-infrared

Günther RoelkensRuijun WangAnton VasilievSanja RadosavljevicFabio PavanelloAditya MalikMuhammad MuneebRoel Baets

III-V/Si photonic integrated circuits for the mid-infrared

Günther RoelkensRuijun WangAnton VasilievSanja RadosavljevicXiaoning JiaNuria Teigell BeneitezBahawal HaqFabio PavanelloMuhammad MuneebRoel Baets

III-V/silicon photonic integrated circuits for spectroscopic sensing in the 2 mu m wavelength range (invited paper)

Ruijun WangMuhammad MuneebAnton VasilievAditya MalikRoel BaetsGünther Roelkens

Widely tunable 23 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

Ruijun WangAnton VasilievRoel BaetsGünther Roelkens

A1 Journal Article in PHOTONICS RESEARCH

Widely tunable III-V-on-silicon Vernier lasers operating in the 2.3 um wavelength range

Ruijun WangRoel BaetsGünther Roelkens

2017

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Ruijun WangRoel BaetsGünther Roelkens

A1 Journal Article in OPTICA

DFB laser array in the 2.3 um wavelength range on a silicon photonic integrated circuit

Ruijun WangRoel BaetsGünther Roelkens

GaSb SLDs and gain-chips for sensing applications in the 2-2.5 micron wavelength range

Ruijun WangGünther Roelkens

Heterogeneously integrated InP-based type-II DFB laser array on silicon

Ruijun WangRoel BaetsGünther Roelkens

III-V/silicon photonic integrated circuits for spectroscopic sensing in the 2-2.5 um wavelength range

Ruijun WangGünther Roelkens

III–V-on-silicon photonic integrated circuits for spectroscopic sensing in the 2–4 μm wavelength range

Ruijun WangAnton VasilievMuhammad MuneebAditya MalikRoel BaetsGünther Roelkens

A1 Journal Article in SENSORS

Novel light source integration approaches for silicon photonics

Zhechao WangAmin AbbasiUtsav Deepak DaveAndreas De GrooteSulakshna KumariYuting ShiBin TianKasper Van GasseJochem VerbistRuijun WangWeiqiang XieJing ZhangYunpeng ZhuJohan BauwelinckXin YinZeger HensBart KuykenRoel BaetsGeert MorthierDries Van ThourhoutGünther Roelkens

A1 Journal Article in LASER & PHOTONICS REVIEWS

Widely tunable 2.3 um InP-based type-II DFB laser array heterogeneously integrated in silicon for sensing

Ruijun WangRoel BaetsGünther Roelkens

2016

2.3 mu m range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit

Ruijun WangMuhammad MuneebRoel BaetsGünther Roelkens

A1 Journal Article in OPTICS EXPRESS

Compact GaSb/silicon-on-insulator 2.0x mu m widely tunable external cavity lasers

Ruijun WangAditya MalikGünther Roelkens

A1 Journal Article in OPTICS EXPRESS

Heterogeneous integration of InP-based type-II active devices on silicon for 2 um wavelength range on-chip spectroscopy

Ruijun WangMuhammad MuneebAditya MalikRoel BaetsGünther Roelkens

Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Ruijun WangAditya MalikAnton VasilievRoel BaetsGünther Roelkens

A1 Journal Article in APPLIED PHYSICS LETTERS

III-V-on-silicon 2-mu m-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

Ruijun WangMuhammad MuneebAditya MalikRoel BaetsGünther Roelkens

A1 Journal Article in OPTICS EXPRESS

SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI

Ruijun WangMuhammad MuneebRoel BaetsGünther Roelkens

2015

2 mu m wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Ruijun WangMuhammad MuneebRoel BaetsGünther Roelkens

A1 Journal Article in OPTICS EXPRESS

Design and fabrication of type-II InP-based lasers and photodetectors integrarted on SOI waveguide

Ruijun WangMuhammad MuneebRoel BaetsGünther Roelkens

III-V-on-silicon photonic devices for optical communication and sensing

Günther RoelkensAmin AbbasiPaolo CardileUtsav Deepak DaveAndreas De GrooteYannick De KoninckSören DhooreAlban GassenqNannicha HattasanSulakshna KumariShahram KeyvaniniaBart KuykenLianyan LiPauline MechetMuhammad MuneebDorian SanchezThijs SpuesensAnanth SubramanianMartijn TassaertKasper Van GasseJochem VerbistRuijun WangZhechao WangJing ZhangXin YinJohan BauwelinckGeert MorthierRoel BaetsDries Van Thourhout

A2 Journal Article in PHOTONICS

Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications

Sulakshna KumariRuijun WangNicolas Le ThomasGünther RoelkensRoel Baets

2014

Long-wavelength silicon photonic integrated circuits

Günther RoelkensUtsav Deepak DaveAlban GassenqNannicha HattasanChen HuBart KuykenFrançois LeoAditya MalikMuhammad MuneebEva RyckeboerDorian SanchezSarah UvinRuijun WangZeger HensRoel Baets

Silicon-based photonic integration beyond the telecommunication wavelength range

Günther RoelkensUtsav Deepak DaveAlban GassenqNannicha HattasanChen HuBart KuykenFrançois LeoMuhammad MuneebEva RyckeboerDorian SanchezSarah UvinRuijun WangZeger HensRoel Baets

A1 Journal Article in IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

2013

Design of a high contrast grating GaSb-based VCSEL integrated on silicon-on-insulator

Ruijun WangDorian SanchezGünther Roelkens