Research Explorer

Your browser does not support JavaScript or JavaScript is not enabled. Without JavaScript some functions of this webapplication may be disabled or cause error messages. To enable JavaScript, please consult the manual of your browser or contact your system administrator.

Researcher

Roland Vanmeirhaeghe

Awards & Distinctions

194 Results

2014

Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements

Filip GeenenWerner KnaepenKoen De KeyserK OpsomerRoland VanmeirhaegheJ Jordan-SweetC LavoieChristophe Detavernier

A1 Journal Article in THIN SOLID FILMS

2011

TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

Qi XieDavy DeduytscheJan MusschootRoland VanmeirhaegheChristophe DetavernierShao-Feng DingXin-Ping Qu

A1 Journal Article in MICROELECTRONIC ENGINEERING

Texture of thin silicide and germanide films

Koen De KeyserChristophe DetavernierRoland Vanmeirhaeghe

2010

Characterization of solid state reactions and crystallization in thin films using in situ X-ray diffraction

Werner KnaepenChristophe DetavernierRoland Vanmeirhaeghe

Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition

Jolien DendoovenDavy DeduytscheJan MusschootRoland VanmeirhaegheChristophe Detavernier

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

Werner KnaepenJ DemeulemeesterDavy DeduytscheJL Jordan-SweetA VantommeRoland VanmeirhaegheChristophe DetavernierC Lavoie

A1 Journal Article in MICROELECTRONIC ENGINEERING

In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

Tao ChenShu-Yi LiuQi XieChristophe DetavernierRoland VanmeirhaegheXin-Ping Qu

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

In situ study of the formation of silicide phases in amorphous Co-Si mixed layers

Charlotte Van BockstaelKoen De KeyserJelle DemeulemeesterAndré VantommeRoland VanmeirhaegheChristophe DetavernierJean Jordan-SweetChristian Lavoie

A1 Journal Article in MICROELECTRONIC ENGINEERING

In situ x-ray diffraction study of Ni-Yb interlayer and alloy systems on Si(100)

Werner KnaepenJ DemeulemeesterJ Jordan-SweetA VantommeChristophe DetavernierRoland VanmeirhaegheC Lavoie

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Koen De KeyserCharlotte Van BockstaelRoland VanmeirhaegheChristophe DetavernierE VerleysenH BenderW VandervorstJ Jordan-SweetC Lavoie

A1 Journal Article in APPLIED PHYSICS LETTERS

Texture of cobalt germanides on Ge(100) and Ge(111) and its influence on the formation temperature

Koen De KeyserRoland VanmeirhaegheChristophe DetavernierJ Jordan-SweetC Lavoie

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

Tao ChenShu-Yi LiuQi XieChristophe DetavernierRoland VanmeirhaegheXin-Ping Qu

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

2009

Comparison of thermal and plasma enhanced ALD/CVD of vanadium pentoxide

Jan MusschootDavy DeduytscheHilde PoelmanJohan HaemersRoland VanmeirhaegheSven Van den BergheChristophe Detavernier

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

In situ study of the formation of silicide phases in amorphous Ni-Si mixed layers

Charlotte Van BockstaelChristophe DetavernierRoland VanmeirhaegheJean Jordan-SweetChristian Lavoie

A1 Journal Article in Journal of Applied Physics

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

Werner KnaepenS GaudetChristophe DetavernierRoland VanmeirhaegheJ SweetC Lavoie

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Modeling the conformality of atomic layer deposition: the effect of sticking probability

Jolien DendoovenJan MusschootDavy DeduytscheRoland VanmeirhaegheChristophe Detavernier

Modeling the conformality of atomic layer deposition: the effect of sticking probability

Jolien DendoovenDavy DeduytscheJan MusschootRoland VanmeirhaegheChristophe Detavernier

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Qi XieYL JiangJan MusschootDavy DeduytscheChristophe DetavernierRoland VanmeirhaegheS Van den BergheGP RuBZ LiXP Qu

A1 Journal Article in THIN SOLID FILMS

The texture of thin NiSi films and its effect on agglomeration

Koen De KeyserChristophe DetavernierRoland VanmeirhaegheJean Jordan-SweetChristian Lavoie

2008

Conformality of thermal and plasma enhanced ALD

Jolien DendoovenJan MusschootDavy DeduytscheRoland VanmeirhaegheChristophe Detavernier

Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts

O GULLUM BIBERRoland VanmeirhaegheA TURUT

A1 Journal Article in THIN SOLID FILMS

Epitaxial formation of a metastable hexagonal nickel-silicide

Koen De KeyserCharlotte Van BockstaelChristophe DetavernierRoland VanmeirhaegheJ JORDAN-SWEETC LAVOIE

A1 Journal Article in ELECTROCHEMICAL AND SOLID STATE LETTERS

Formation and stability of NiSi in the presence of Co and Fe alloying elements

Davy DeduytscheChristophe DetavernierRoland VanmeirhaegheJean Jordan-SweetChristian Lavoie

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition

Q XIEJan MusschootDavy DeduytscheRoland VanmeirhaegheChristophe DetavernierS VAN DEN BERGHEYL JIANGGP RUBZ LIXP QU

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

Werner KnaepenChristophe DetavernierRoland VanmeirhaegheJJ SWEETC LAVOIE

A1 Journal Article in THIN SOLID FILMS

Metal in-diffusion during Fe and co-germanidation of germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

Physical and optical properties of ZnO thin films grown by DC sputtering deposition

T ChenSY LiuChristophe DetavernierRoland VanmeirhaegheXP Qu

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Yttrium silicide formation and its contact properties on Si(100)

W HUANGGP RUChristophe DetavernierRoland VanmeirhaegheYL JIANGXP QUBZ LI

A1 Journal Article in MICROELECTRONIC ENGINEERING

2007

Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Q XIEYL JIANGChristophe DetavernierDavy DeduytscheRoland VanmeirhaegheGP RUBZ LIXP QU

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Characterization of the texture of silicide films using electron backscattered diffraction

Koen De KeyserChristophe DetavernierRoland Vanmeirhaeghe

A1 Journal Article in APPLIED PHYSICS LETTERS

Effect of Pt addition on the stress of NiSi film formed on Si(100).

GP RUChristophe DetavernierRoland VanmeirhaegheLI BING-ZONG

A2 Journal Article in CHINESE JOURNAL OF SEMICONDUCTORS

Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements

Davy DeduytscheChristophe DetavernierRoland VanmeirhaegheJL JORDAN-SWEETC LAVOIE

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Fundamentals of intrinsic stress during silicide formation

A ÖzcelikCharlotte Van BockstaelChristophe DetavernierRoland Vanmeirhaeghe

Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer

YL JIANGQ XIEChristophe DetavernierGP RUXP QUBZ LIPK CHURoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

K OPSOMERDavy DeduytscheChristophe DetavernierRoland VanmeirhaegheA LAUWERSK MAEXC LAVOIE

A1 Journal Article in APPLIED PHYSICS LETTERS

Oxidation suppression in ytterbium silicidation by Ti/TiN bicapping layer

YL JianQ XieChristophe DetavernierRoland VanmeirhaegheGP RuXP QuBZ LiAP HuangPK Chu

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors

Wouter LeroyChristophe DetavernierRoland VanmeirhaegheC LAVOIE

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

2006

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMERE SIMOENC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A fundamental study of advanced metal/semiconductor contacts

Wouter LeroyRoland VanmeirhaegheChristophe Detavernier

An in situ study of the stability of thin Ni-silicide layers

Davy DeduytscheRoland VanmeirhaegheChristophe Detavernier

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

In-situ X-ray diffraction measurements for monitoring carbide and silicide phase formation

Wouter LeroyDavy DeduytscheChristophe DetavernierRoland VanmeirhaegheDirk PoelmanC LAVOIE

In-situ X-ray diffraction measurements for monitoring carbide and silicide phase formation

Wouter LeroyDavy DeduytscheChristophe DetavernierRoland VanmeirhaegheDirk PoelmanC LAVOIE

Linear growth of Ni2Si thin film on n+/p junction at low temperature

YL JIANGGP RUXP QUBZ LIChristophe DetavernierRoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF MATERIALS RESEARCH

Point-defect generation in Ni-,Pd-, and Pt-germanided Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors

Wouter LeroyChristophe DetavernierRoland VanmeirhaegheAJ KELLOCKC LAVOIE

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

M BIBERO GULLUStefaan FormentRoland VanmeirhaegheA TURUT

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Tungsten carbides as a diffusion barrier for Cu metallization

Christophe DetavernierRoland Vanmeirhaeghe

2005

An X-ray photoelectron spectroscopy study of BaAl2S4 thin films

Philippe SmetJo Van HaeckeRoland VanmeirhaegheDirk Poelman

A1 Journal Article in JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Crystallographic and luminescent properties of orthorhombic BaAl2S4: Eu powder and thin films

Philippe SmetJo Van HaeckeRoland VanmeirhaegheDirk Poelman

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Een fundamentele studie van inhomogeniteiten en dipooleffecten bij metaal/halfgeleidercontacten

Stefaan FormentRoland Vanmeirhaeghe

Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation

YL JIANGGP RUW HUANGXP QUBZ LIA AGARWALG CAIJ POATEChristophe DetavernierRoland Vanmeirhaeghe

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

Davy DeduytscheChristophe DetavernierRoland VanmeirhaegheC LAVOIE

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Study of BaAl₂S₄:Eu and SrS : Ag as blue emitting materials for thin film electroluminescence

Philippe SmetDirk PoelmanRoland Vanmeirhaeghe

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Wouter LeroyKarl OPSOMERStefaan FormentRoland Vanmeirhaeghe

A1 Journal Article in SOLID-STATE ELECTRONICS

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

GP RURoland VanmeirhaegheStefaan FormentYL JIANGXP QUSY ZHUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

2004

Blue electroluminescence from multilayered BaS: Eu/Al2S3 thin films

Philippe SmetDirk PoelmanRoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

CoSi2 formation in the presence of Ti, Ta or W

Christophe DetavernierC LAVOIERoland Vanmeirhaeghe

A1 Journal Article in THIN SOLID FILMS

Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts

SY ZHURoland VanmeirhaegheStefaan FormentGP RUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes

Stefaan FormentM BIBERRoland VanmeirhaegheWouter LeroyA TURUT

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

Christophe DetavernierRoland VanmeirhaegheW VANDERVORSTK MAEX

A1 Journal Article in MICROELECTRONIC ENGINEERING

Low-temperature formation of CoSi2 in the presence of Au

Christophe DetavernierC LAVOIEFM D'HEURLEH BENDERRoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Luminescence and morphology of multi-layered europium-doped barium thioaluminate thin films

Philippe SmetJo Van HaeckeDirk PoelmanRoland Vanmeirhaeghe

Schottky barrier characteristics of ternary silicide Co1-xNixSi2 on n-Si(100) contacts formed by solid phase reaction of multilayer

SY ZHURoland VanmeirhaegheStefaan FormentGP RUXP QUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction

XP QUYL JIANGGP RUF LUBZ LIChristophe DetavernierRoland Vanmeirhaeghe

A1 Journal Article in THIN SOLID FILMS

2003

Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems

Christophe DetavernierXP QURoland VanmeirhaegheBZ LIK MAEX

A1 Journal Article in JOURNAL OF MATERIALS RESEARCH

Photoluminescence of electron beam evaporated CaS: Bi thin films

Philippe SmetJochen Van GheluweDirk PoelmanRoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF LUMINESCENCE

Room temperature grain growth in sputtered Cu films

Davy DeduytscheChristophe DetavernierJérémie De BaerdemaekerRoland VanmeirhaegheCharles Dauwe

Room temperature grain growth in sputtered Cu films

Davy DeduytscheChristophe DetavernierJ DEBAERDEMAEKERRoland VanmeirhaegheCharles DauweTS KUAN

Room-temperature grain growth in sputter-deposited Cu films

Christophe DetavernierDavy DeduytscheRoland VanmeirhaegheJérémie De BaerdemaekerCharles Dauwe

A1 Journal Article in APPLIED PHYSICS LETTERS

2002

A BEEM study on the effects of the annealing temperature on barrier height inhomogeneity of CoSi2/Si contact formed in Co-Ti-Si systems.

SY ZHUXP QUGP RUBZ LIChristophe DetavernierRoland VanmeirhaegheFelix Cardon

A2 Journal Article in CHINESE JOURNAL OF SEMICONDUCTORS

CoSi/sub 2/ formation using a Ti capping layer-the influence of processing conditions on CoSi/sub 2/ nucleation

Christophe DetavernierRoland VanmeirhaegheK. MAEX

CoSi2 formation in the presence of carbon.

Christophe DetavernierRoland VanmeirhaegheH BENDERO RICHARDB BRIJSK MAEX

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

CoSi2 formation using a Ti capping layer-Influence of processing conditions on CoSi2 nucleation

Christophe DetavernierRoland VanmeirhaegheK MAEX

Double threshold behaviour of I-V characteristics of CoSi2/Si Schottky contacts.

SY ZHUGP RUXP QUBZ LIRoland VanmeirhaegheChristophe DetavernierFelix Cardon

A1 Journal Article in CHINESE PHYSICS

Silicide formation for Ni and Pd bilayers on Si (100) substrates

Christophe DetavernierRoland VanmeirhaegheFelix Cardon

Sillicide formation for Ni and Pd bilayers on Si(100) substrates

XP QUChristophe DetavernierRoland VanmeirhaegheFelix Cardon

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction.

GP RUBZ LIGB JIANGXP QUJun LiuRoland VanmeirhaegheFelix Cardon

A1 Journal Article in MATERIALS CHARACTERIZATION

The influence of Ti and TiN on the thermal stability of CoSi/sub 2 /

Christophe DetavernierRoland VanmeirhaegheK. MAEX

The influence of Ti and TiN on the thermal stability of cobaltdisilicide

Christophe DetavernierGP RURoland VanmeirhaegheK MAEX

2001

A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).

Stefaan FormentRoland VanmeirhaegheAn De VriezeKatrien StrubbeWalter Gomes

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

CoSi2 formation through SiO2

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEX

A1 Journal Article in THIN SOLID FILMS

CoSi2 nucleation in the presence of Ge.

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEX

A1 Journal Article in THIN SOLID FILMS

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.

SY ZHUChristophe DetavernierRoland VanmeirhaegheFelix CardonAnja BlondeelPaul ClauwsGP RUBZ LI

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers : influence of surface composition upon the barrier height

An De VriezeKatrien StrubbeWalter GomesS FORMENTRoland Vanmeirhaeghe

A1 Journal Article in PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer.

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEXH BENDERB BRIJSW VANDERVORST

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Fundamental study of nucleation and epitaxial growth of CoSi2

Christophe DetavernierRoland Vanmeirhaeghe

Influence of sintering on photoluminiscent emission of SrS: Cu,Ag powders and e-beam evaporated phosphor layers.

Philippe SmetDavy WautersDirk PoelmanRoland Vanmeirhaeghe

A1 Journal Article in SOLID STATE COMMUNICATIONS

Microoptical characterization of electroluminescent SrS: Cu,Ag thin films by photo- and cathodoluminescence observations.

Dirk PoelmanDavy WautersJorg VersluysRoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Nucleation of COSi2 and MnSi1.7 in the Co/Mn/Si ternary system

Christophe DetavernierRoland VanmeirhaegheX QUG RUS ZHUB LI

Nucleation of CoSi/sub 2/ and MnSi/sub 1.7/ in the Co/Mn/Si ternary system

Christophe DetavernierRoland VanmeirhaegheZHU SHI-YANGLI BING-ZONG

Optical and structural characterisation of post deposition annealed electroluminescent blue emitting thin film phosphors

Davy WautersFelix CardonRoland Vanmeirhaeghe

Orientation-dependent stress build-up during the formation of epitaxial CoSi2.

A STEEGENChristophe DetavernierAlbert LauwersK MAEXRoland VanmeirhaegheFelix Cardon

A1 Journal Article in MICROELECTRONIC ENGINEERING

Photoluminescent and structural properties of CaS: Pb electron beam deposited thin films.

Jorg VersluysDirk PoelmanDavy WautersRoland Vanmeirhaeghe

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

Studie van de invloed van technologisch belangrijke productieprocesstappen op de elektrische eigenschappen van p-InP en n-InxGa1-xAs met behulp van schottkybarrières

Lieve GoubertFelix CardonRoland Vanmeirhaeghe

The dependence of the etching property of CoSi2 films in diluted HF solutions on the formation conditions.

SY ZHUGP RUChristophe DetavernierRoland VanmeirhaegheE CARDONBZ LI

A1 Journal Article in APPLIED SURFACE SCIENCE

The effect of Pd addition on silicide formation for Ni/Pd bilayers on silicon

XP QUChristophe DetavernierRoland VanmeirhaegheGP RUBZ LI

2000

A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy.

SY ZHUChristophe DetavernierRoland VanmeirhaegheXP QUGP RUFelix CardonBZ LI

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A photoluminescence study of CaS: Pb thin films.

Jorg VersluysDirk PoelmanDavy WautersRoland VanmeirhaegheFelix Cardon

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Shiyang ZhuXin-Ping QuRoland VanmeirhaegheChristophe DetavernierGuo-Ping RuFelix CardonBing-Zong Li

A1 Journal Article in SOLID-STATE ELECTRONICS

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111).

SY ZHURoland VanmeirhaegheChristophe DetavernierFelix CardonGP RUXP QUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

CoSi2 formation in the Ti/Co/SiO2/Si system

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEXH BENDERSY ZHU

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction.

SY ZHUChristophe DetavernierRoland VanmeirhaegheFelix CardonGP RUXP QUBZ LI

A1 Journal Article in SOLID-STATE ELECTRONICS

Influence of Ti on CoSi2 nucleation.

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEXW VANDERVORSTB BRIJS

A1 Journal Article in APPLIED PHYSICS LETTERS

Influence of mixing entropy on the nucleation of CoSi2

Christophe DetavernierRoland VanmeirhaegheFelix CardonK Maex

A1 Journal Article in PHYSICAL REVIEW B

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy.

GP RUXP QUSY ZHUBZ LIChristophe DetavernierRoland VanmeirhaegheFelix CardonRA DONATONK MAEX

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Nondestructive characterization of thin silicides using x-ray reflectivity.

Christophe DetavernierRoger De GryseRoland VanmeirhaegheFelix CardonGP RUXP QUBZ LIRA DONATONK MAEX

A1 Journal Article in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS

Optical characterisation of SrS: Cu and SrS: Cu,Ag EL devices.

Davy WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

Photoluminescence of SrS: Cu, Ag thin films: influence of substrate and annealing conditions.

Dirk PoelmanDavy WautersJorg VersluysRoland VanmeirhaegheFelix Cardon

Photoluminescence of SrS: Cu,Ag and SrS1-xSex: Cu,Ag thin films.

Dirk PoelmanDavy WautersRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SOLID STATE COMMUNICATIONS

Photoluminescent, electroluminescent and structural properties of CaS: Cu and CaS: Cu, Ag thin films.

Davy WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

Studie van de invloed van productieprocesstappen op de elektrische eigenschappen van metaal/n-GaAs en metaal/n-AlxGa1-x schottkycontacten

Greet VanalmeFelix CardonRoland Vanmeirhaeghe

The influence of Ti cappings layes on CoSi2 formation.

Christophe DetavernierRoland VanmeirhaegheFelix CardonRA DONATONK MAEX

A1 Journal Article in MICROELECTRONIC ENGINEERING

The influence of mixing entropy on the nucleationof CoSi2.

Christophe DetavernierRoland VanmeirhaegheFelix CardonK MAEX

A2 Journal Article in PHYSICAL REVIEW B

1999

A BEEM study of PtSi Schottky contacts on ion-milled Si

GP RUChristophe DetavernierRA DONATONAnja BlondeelPaul ClauwsRoland VanmeirhaegheFelix CardonK MAEXXP QUSY ZHU et al.

A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes.

S ZHURoland VanmeirhaegheChristophe DetavernierGP RUBZ LIFelix Cardon

A1 Journal Article in SOLID STATE COMMUNICATIONS

A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments.

Greet VanalmeLieve GoubertRoland VanmeirhaegheFelix CardonPeter Van Daele

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

BEEM studies of the PtSi/Si(100) interface electronic structure.

T VDOVENKOVAV STRIKHAFelix CardonRoland VanmeirhaegheGreet Vanalme

A1 Journal Article in JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

CoSi2 formation in the presence of interfacial silicon oxide.

Christophe DetavernierRoland VanmeirhaegheFelix CardonRA DONATONK MAEX

A1 Journal Article in APPLIED PHYSICS LETTERS

Effects of rapid thermal annealing on electron beam evaporated SrS: Ce thin film electroluminescent devices made in H2S ambient.

Davy WautersDirk PoelmanRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Formation and characterization of SPE grown ultra-thin cobalt disilicide film

XP QUGP RUBZ LIChristophe DetavernierRoland VanmeirhaegheFelix Cardon

Intrinsic optical and structural properties of SrS thin films.

Dirk PoelmanDavy WautersRoland VanmeirhaegheFelix Cardon

A1 Journal Article in THIN SOLID FILMS

The influence of Ti capping layers on CoSi/sub 2/ formation in the presence of interfacial oxide

Christophe DetavernierR.A. DONATONK. MAEXS. JINH. BENDERRoland VanmeirhaegheFelix Cardon

The influence of Ti capping layers on CoSi2 formation in tee presence of interfacial oxide

Christophe DetavernierR DONATONK MAEXS JINH BENDERRoland VanmeirhaegheFelix Cardon

1998

A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers.

Roland VanmeirhaegheGreet VanalmeLieve GoubertFelix CardonPeter Van Daele

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

GP RUJ LIUXP QUBZ LIChristophe DetavernierRoland VanmeirhaegheFelix Cardon

Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment.

Christophe DetavernierRoland VanmeirhaegheR DONATONK MAEXFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Non-destructive characterization of thin silicides using X-ray reflectivity

Christophe DetavernierR DEGRYSERoland VanmeirhaegheFelix CardonGP RUBZ LI

1997

A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching.

Greet VanalmeRoland VanmeirhaegheFelix CardonPeter Van Daele

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.

Roland VanmeirhaegheGM VANALMELieve GoubertFelix CardonPeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS

A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.

Lieve GoubertRoland VanmeirhaeghePaul ClauwsFelix CardonPeter Van Daele

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Influence of the growth conditions on the properties of CaS:Eu electroluminescent thin films.

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

Possibilities and limitations of blue electroluminescence in CaS:Pb2+ thin films.

Dirk PoelmanRoland VanmeirhaegheBA VERMEERSCHFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1996

Electrochemical reduction vs, vapour deposition for n-GaAs/Cu Schottky-barrier formation : a comparative study

Philippe VereeckenGM VANALMERoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS

Fundamental properties and nanoscale aspects of Schottky barriers

Roland Vanmeirhaeghe

Quantitative prediction of acceptor concentration reduction in boron doped silicon due to electron irradiation

JL EveraertFrans VerhaegenRoland VanmeirhaegheJozef UyttenhoveFelix Cardon

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

1995

A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU/N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING.

JL EVERAERTRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A DETAILED XPS STUDY OF THE RARE-EARTH COMPOUNDS EUS AND EUF3.

R VERCAEMSTDirk PoelmanLucien FiermansRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES.

Rita VercaemstDirk PoelmanRoland VanmeirhaegheLucien FiermansWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.

Roland VanmeirhaegheLieve GoubertLucien FiermansWilly LaflereFelix CardonPeter De DobbelaerePeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS

DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI/SIO2/SI STRUCTURES.

M DEPASB VERMEIREPW MERTENSRoland VanmeirhaegheMM HEYNS

A1 Journal Article in SOLID-STATE ELECTRONICS

Determination of tunnelling parameters in ultra-thin-oxide layer poly-Si/SiO2/Si structures

Michel DepasB VERMEIREPW MERTENSRoland VanmeirhaegheMM HEYNS

A2 Journal Article in SOLID-STATE ELECTRONICS

Electrical-transport in (100)CoSi2/Si contacts.

Albert LauwersKK LARSENM VANHOVERonald VerbeeckK MAEXM VANROSSUMAn VercaemstRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Hydrogen passivation caused by 'soft' sputter etch cleaning of Si.

AS VERCAEMSTRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

1994

Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Thin film electroluminescence in SrS:Ce: the quest for blue light

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A4 Journal Article in BELVAC NEWS

XPS study of TbF3 and TbOF centres in ZnS.

J Van Den BosscheKristiaan NeytsPatrick De VisschereDorina CorlatanHerman PauwelsRita VercaemstLucien FiermansDirk PoelmanRoland VanmeirhaegheWilly Laflere et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

1993

EFFECT OF MOISTURE ON PERFORMANCE OF SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.

Dirk PoelmanRita VercaemstRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

FORMATION OF ULTRATHIN COSI2 FILMS USING A 2-STEP LIMITED REACTION PROCESS.

RJ SCHREUTELKAMPW COPPYEW DEBOSSCHERRoland VanmeirhaegheL VANMEIRHAEGHEJ VANHELLEMONTB DEWEERDTAlbert LauwersK MAEX

A1 Journal Article in JOURNAL OF MATERIALS RESEARCH

ON THE INFLUENCE OF SPUTTER ETCH CLEANING ON THE SILICIDATION, THE THERMAL-STABILITY AND THE ELECTRICAL CHARACTERISTICS OF TI/P-SI CONTACTS.

AS VERCAEMSTRoland VanmeirhaegheWilly LaflereFelix CardonW DEBOSSCHERRJ SCHREUTELKAMP

A1 Journal Article in SOLID-STATE ELECTRONICS

ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL/N-GAAS CONTACTS.

R VANDEWALLERoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION.

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in MICROELECTRONIC ENGINEERING

1992

A QUANTITATIVE-ANALYSIS OF CAPACITANCE PEAKS IN THE IMPEDANCE OF AL/SIOX/P-SI TUNNEL-DIODES.

Michel DepasRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the role of defects in some compound semiconductor (GaAs, InP, CdTe) Schottky Barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

Spectral shifts in thin film electroluminescent devices: an interference effect.

Dirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

THE INFLUENCE OF SE COEVAPORATION ON THE ELECTROLUMINESCENT PROPERTIES OF SRSCE THIN-FILMS.

Dirk PoelmanRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF LUMINESCENCE

1991

A STUDY OF SPUTTER-INDUCED DEFECTS IN MAGNETRON-SPUTTERED COSI2 AND TISI2 SCHOTTKY BARRIERS ON NORMAL-TYPE AND PARA-TYPE GAP

E KABUSHEMEYERoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

AN INVESTIGATION ON THE INFLUENCE OF SI SURFACE PRETREATMENT ON THE FREQUENCY-DEPENDENCE OF THE IMPEDANCE OF CO N-SI SCHOTTKY BARRIERS

AL DELAERERoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

ON THE RELATIONSHIP BETWEEN THE SURFACE-COMPOSITION OF THE SUBSTRATE AND THE SCHOTTKY-BARRIER HEIGHT IN AU/N-CDTE CONTACTS

Roland VanmeirhaegheR VANDEWALLEWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

On the relationship between the surface composition of the substrate and the Schottky-barrier height in Au/n-CdTe contacts

Roland VanmeirhaegheRonald Van De WalleWilly LaflereFelix Cardon

A2 Journal Article in Journal Appl. Phys., 70, nr. 4, pp. 2200-2203

TITANIUM SILICIDE/P-SI SCHOTTKY BARRIERS FORMED BY RAPID THERMAL-PROCESSING IN NITROGEN

W DEBOSSCHERRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Titanium silicide p-Si Schottky barriers formed by rapid thermal processing in nitrogen

W DE BOSSCHERRoland VanmeirhaegheWilly LaflereFelix Cardon

A2 Journal Article in Soc. St. Electron, 34(8), pp. 827-834, 11 figg

1990

On the electrical properties, the interfacial reactivity and the thermal stability of CoSi₂/-, TiSi₂/-, Co/- and Ti/p-InP Schottky barriers

LMO Van den BergheRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

1988

A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi₂/Si Schottky barriers

W De BosscherRoland VanmeirhaegheA De LaereWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers

Roland VanmeirhaegheLMO Van den BergheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

The growth of thin oxide layers on GaAs in methanol

Hilde BarbéRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1987

On the influence of the thin interfacial oxide layer on the electrical and photovoltaic properties of Au/oxide/p-InP diodes

Yiping SongRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers

DA VandenbrouckeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1986

Defects introduced in InP by mechanical polishing and studied by means of Au- and Al-p-InP Schottky barriers

LMO Van den BergheRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

YP SongRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

1985

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF ELECTROANALYTICAL CHEMISTRY

Characteristics of the RuO₂-n-GaAs Schottky barrier

DA VandenbrouckeRoland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1984

Comment on the paper entitled 'Characterization of the interface states at Al-GaAs Schottky barriers with a thin interface layer'

Roland VanmeirhaegheWilly Laflere

A1 Journal Article in SOLID-STATE ELECTRONICS

Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1983

On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

1982

An experimental study of Ti-pSi MIS type Schottky barriers

PL HanselaerWilly LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electron trapping in the oxide layer of MIS-type Al-, Au-, Ag- and Sn-n type GaAs Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments

Roland VanmeirhaegheWilly LaflereFelix Cardon

A1 Journal Article in SOLID-STATE ELECTRONICS

1981

Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layer

Roland VanmeirhaegheWilly LaflereYu-Min LiFelix Cardon

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1980

Effects of thin oxide layers on the characteristics of GaAs MIS solar cells

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Investigation of the C-V behaviour of GaAs-metal and GaAs-electrolyte contacts under forward bias

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1979

On the influence of the surface pretreatment on the photocurrent-voltage characteristics and the spectral response of the n-GaAs-electrolyte interface

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Photocurrent oscillations at the n-GaAs/electrolyte interface

Roland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

1978

On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal Schottky barriers

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1976

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheEC DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA

On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes

Willy LaflereRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in SURFACE SCIENCE

1975

Investigation on frequency-dependence of impedance of nearly ideally polarizable semiconductor electrodes CDSE, CDS and TIO₂

EC DutoitRoland VanmeirhaegheFelix CardonWalter Gomes

A1 Journal Article in BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS

On the application of the Kramers-Kronig relations to problems concerning the frequency dependence of electrode impedance

Roland VanmeirhaegheEC DutoitFelix CardonWalter Gomes

A1 Journal Article in ELECTROCHIMICA ACTA