Research Explorer

Your browser does not support JavaScript or JavaScript is not enabled. Without JavaScript some functions of this webapplication may be disabled or cause error messages. To enable JavaScript, please consult the manual of your browser or contact your system administrator.

Researcher

Qi Xie

Publications & Research Data

Awards & Distinctions

25 Results

2012

Band alignment in Ge/GeOx/HfO₂/TiO₂ heterojunctions as measured by hard X-ray photoelectron spectroscopy

AK RumaizJC WoicikC WeilandQi XieDP SiddonsGH JaffariChristophe Detavernier

A1 Journal Article in APPLIED PHYSICS LETTERS

Fermi level depinning failure for Al/GeO₂/Ge contacts

Hao YuQi XieYu-Long JiangDavy DeduytscheChristophe Detavernier

A1 Journal Article in ECS SOLID STATE LETTERS

Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors

Qi XieShaoren DengMarc SchaekersDennis LinMatty CaymaxAnnelies DelabieXin-Ping QuYu-Long JiangDavy DeduytscheChristophe Detavernier

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics

Shao-Feng DingQi XieFei ChenHai-Sheng LuShaoren DengDavy DeduytscheChristophe DetavernierXin-Ping Qu

A1 Journal Article in ECS SOLID STATE LETTERS

Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition

Geert RampelbergMarc SchaekersKoen MartensQi XieDavy DeduytscheBob De SchutterNicolas BlascoJorge KittlChristophe Detavernier

TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi

Yu-Long JiangQi XieXin-Ping QuDavid W ZhangDavy DeduytscheChristophe Detavernier

A1 Journal Article in ELECTROCHEMICAL AND SOLID STATE LETTERS

2011

ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

Thomas WaechtlerShao-Feng DingLutz HofmannRobert MothesQi XieSteffen OswaldChristophe DetavernierStefan E SchulzXin-Ping QuHeinrich Lang et al.

A1 Journal Article in MICROELECTRONIC ENGINEERING

Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure

Xiao-Rong WangYu-Long JiangQi XieChristophe DetavernierGuo-Ping RuXin-Ping QuBing-Zong Li

A1 Journal Article in MICROELECTRONIC ENGINEERING

Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor

Quan-Li LiQi XieYu-Long JiangGuo-Ping RuXin-Ping QuBing-Zong LiDavid W ZhangDavy DeduytscheChristophe Detavernier

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma

Qi XieDavy DeduytscheMarc SchaekersMatty CaymaxAnnelies DelabieXin-Ping QuChristophe Detavernier

A1 Journal Article in ELECTROCHEMICAL AND SOLID STATE LETTERS

Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact

Yu-Long JiangQi XieXin-Ping QuGuo-Ping RuDavid W ZhangDavy DeduytscheChristophe Detavernier

A1 Journal Article in ELECTROCHEMICAL AND SOLID STATE LETTERS

High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing

Qi XieShaoRen DengMarc SchaekersDennis LinMatty CaymaxAnnelies DelabieYuLong JiangXinPing QuDavy DeduytscheChristophe Detavernier

A1 Journal Article in IEEE ELECTRON DEVICE LETTERS

Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics

Shao-Feng DingQi XieFei ChenHai-Sheng LuShao-Ren DengChristophe DetavernierGuo-Ping RuYu-Long JiangXin-Ping Qu

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert RampelbergMarc SchaekersKoen MartensQi XieDavy DeduytscheBob De SchutterNicolas BlascoJorge KittlChristophe Detavernier

A1 Journal Article in APPLIED PHYSICS LETTERS

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Geert RampelbergMarc SchaekersKoen MartensQi XieDavy DeduytscheBob De SchutterNicolas BlascoJorge KittlChristophe Detavernier

TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

Qi XieDavy DeduytscheJan MusschootRoland VanmeirhaegheChristophe DetavernierShao-Feng DingXin-Ping Qu

A1 Journal Article in MICROELECTRONIC ENGINEERING

The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru

Shao-Feng DingQi XieSteve MüellerThomas WaechtlerHai-Sheng LuStefan E SchulzChristophe DetavernierXin-Ping QuThomas Gessner

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Qi XieJan MusschootMarc SchaekersMatty CaymaxAnnelies DelabieDennis LinXin-Ping QuYu-Long JiangSven Van den BergheChristophe Detavernier

A1 Journal Article in ELECTROCHEMICAL AND SOLID STATE LETTERS

2010

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Qi XieDavy DeduytscheMarc SchaekersMatty CaymaxAnnelies DelabieXiin-Ping QuChristophe Detavernier

A1 Journal Article in APPLIED PHYSICS LETTERS

Texture of atomic layer deposited ruthenium

Jan MusschootQi XieDavy DeduytscheKoen De KeyserDelphine LongrieJohan HaemersSven Van den BergheRoland Van MeirhaegheJan D'HaenChristophe Detavernier

A1 Journal Article in MICROELECTRONIC ENGINEERING

The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films

Qi XieYu-Long JiangKoen De KeyserChristophe DetavernierDavy DeduytscheGuo-Ping RuXin-Ping QuKN Tu

A1 Journal Article in MICROELECTRONIC ENGINEERING

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

Tao ChenShu-Yi LiuQi XieChristophe DetavernierRoland VanmeirhaegheXin-Ping Qu

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi XieJan MusschootMarc SchaekersMatty CaymaxAnnelies DelabieXin-Ping QuYy-Long JiangSven Van den BergheJunHu LiuChristophe Detavernier

A1 Journal Article in APPLIED PHYSICS LETTERS

2009

Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Qi XieYL JiangJan MusschootDavy DeduytscheChristophe DetavernierRoland VanmeirhaegheS Van den BergheGP RuBZ LiXP Qu

A1 Journal Article in THIN SOLID FILMS

2006

Tungsten carbides as a diffusion barrier for Cu metallization

Qi XieYu-long JiangChristophe DetavernierRoland VanmeirhaegheXin-ping Qu