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Researcher
Qi Xie
Profile
Projects
Publications
Activities
Awards & Distinctions
24
Results
2012
Band alignment in Ge/GeOx/HfO₂/TiO₂ heterojunctions as measured by hard X-ray photoelectron spectroscopy
AK Rumaiz
JC Woicik
C Weiland
Qi Xie
DP Siddons
GH Jaffari
Christophe Detavernier
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2012
Fermi level depinning failure for Al/GeO₂/Ge contacts
Hao Yu
Qi Xie
Yu-Long Jiang
Davy Deduytsche
Christophe Detavernier
A1
Journal Article
in
ECS SOLID STATE LETTERS
2012
Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors
Qi Xie
Shaoren Deng
Marc Schaekers
Dennis Lin
Matty Caymax
Annelies Delabie
Xin-Ping Qu
Yu-Long Jiang
Davy Deduytsche
Christophe Detavernier
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2012
Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics
Shao-Feng Ding
Qi Xie
Fei Chen
Hai-Sheng Lu
Shaoren Deng
Davy Deduytsche
Christophe Detavernier
Xin-Ping Qu
A1
Journal Article
in
ECS SOLID STATE LETTERS
2012
Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition
Geert Rampelberg
Marc Schaekers
Koen Martens
Qi Xie
Davy Deduytsche
Bob De Schutter
Nicolas Blasco
Jorge Kittl
Christophe Detavernier
C3
Conference
2012
TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi
Yu-Long Jiang
Qi Xie
Xin-Ping Qu
David W Zhang
Davy Deduytsche
Christophe Detavernier
A1
Journal Article
in
ELECTROCHEMICAL AND SOLID STATE LETTERS
2012
2011
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems
Thomas Waechtler
Shao-Feng Ding
Lutz Hofmann
Robert Mothes
Qi Xie
Steffen Oswald
Christophe Detavernier
Stefan E Schulz
Xin-Ping Qu
Heinrich Lang
et al.
A1
Journal Article
in
MICROELECTRONIC ENGINEERING
2011
Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure
Xiao-Rong Wang
Yu-Long Jiang
Qi Xie
Christophe Detavernier
Guo-Ping Ru
Xin-Ping Qu
Bing-Zong Li
A1
Journal Article
in
MICROELECTRONIC ENGINEERING
2011
Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor
Quan-Li Li
Qi Xie
Yu-Long Jiang
Guo-Ping Ru
Xin-Ping Qu
Bing-Zong Li
David W Zhang
Davy Deduytsche
Christophe Detavernier
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2011
Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact
Yu-Long Jiang
Qi Xie
Xin-Ping Qu
Guo-Ping Ru
David W Zhang
Davy Deduytsche
Christophe Detavernier
A1
Journal Article
in
ELECTROCHEMICAL AND SOLID STATE LETTERS
2011
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma
Qi Xie
Davy Deduytsche
Marc Schaekers
Matty Caymax
Annelies Delabie
Xin-Ping Qu
Christophe Detavernier
A1
Journal Article
in
ELECTROCHEMICAL AND SOLID STATE LETTERS
2011
High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing
Qi Xie
ShaoRen Deng
Marc Schaekers
Dennis Lin
Matty Caymax
Annelies Delabie
YuLong Jiang
XinPing Qu
Davy Deduytsche
Christophe Detavernier
A1
Journal Article
in
IEEE ELECTRON DEVICE LETTERS
2011
Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics
Shao-Feng Ding
Qi Xie
Fei Chen
Hai-Sheng Lu
Shao-Ren Deng
Christophe Detavernier
Guo-Ping Ru
Yu-Long Jiang
Xin-Ping Qu
P1
Conference
2011
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
Geert Rampelberg
Marc Schaekers
Koen Martens
Qi Xie
Davy Deduytsche
Bob De Schutter
Nicolas Blasco
Jorge Kittl
Christophe Detavernier
C3
Conference
2011
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
Geert Rampelberg
Marc Schaekers
Koen Martens
Qi Xie
Davy Deduytsche
Bob De Schutter
Nicolas Blasco
Jorge Kittl
Christophe Detavernier
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2011
TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition
Qi Xie
Davy Deduytsche
Jan Musschoot
Roland Vanmeirhaeghe
Christophe Detavernier
Shao-Feng Ding
Xin-Ping Qu
A1
Journal Article
in
MICROELECTRONIC ENGINEERING
2011
The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru
Shao-Feng Ding
Qi Xie
Steve Müeller
Thomas Waechtler
Hai-Sheng Lu
Stefan E Schulz
Christophe Detavernier
Xin-Ping Qu
Thomas Gessner
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2011
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
Qi Xie
Jan Musschoot
Marc Schaekers
Matty Caymax
Annelies Delabie
Dennis Lin
Xin-Ping Qu
Yu-Long Jiang
Sven Van den Berghe
Christophe Detavernier
A1
Journal Article
in
ELECTROCHEMICAL AND SOLID STATE LETTERS
2011
2010
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Qi Xie
Davy Deduytsche
Marc Schaekers
Matty Caymax
Annelies Delabie
Xiin-Ping Qu
Christophe Detavernier
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2010
Texture of atomic layer deposited ruthenium
Jan Musschoot
Qi Xie
Davy Deduytsche
Koen De Keyser
Delphine Longrie
Johan Haemers
Sven Van den Berghe
Roland Van Meirhaeghe
Jan D'Haen
Christophe Detavernier
A1
Journal Article
in
MICROELECTRONIC ENGINEERING
2010
The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films
Qi Xie
Yu-Long Jiang
Koen De Keyser
Christophe Detavernier
Davy Deduytsche
Guo-Ping Ru
Xin-Ping Qu
KN Tu
A1
Journal Article
in
MICROELECTRONIC ENGINEERING
2010
The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction
Tao Chen
Shu-Yi Liu
Qi Xie
Christophe Detavernier
Roland Vanmeirhaeghe
Xin-Ping Qu
A1
Journal Article
in
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
2010
Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
Qi Xie
Jan Musschoot
Marc Schaekers
Matty Caymax
Annelies Delabie
Xin-Ping Qu
Yy-Long Jiang
Sven Van den Berghe
JunHu Liu
Christophe Detavernier
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2010
2009
Ru thin film grown on TaN by plasma enhanced atomic layer deposition
Qi Xie
YL Jiang
Jan Musschoot
Davy Deduytsche
Christophe Detavernier
Roland Vanmeirhaeghe
S Van den Berghe
GP Ru
BZ Li
XP Qu
A1
Journal Article
in
THIN SOLID FILMS
2009