Research Explorer

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Researcher

Paul Clauws

Awards & Distinctions

144 Results

2016

Jan Vanhellemont : 35 years of materials research in microelectronics

Gudrun KissingerEddy SimoenCor ClaeysPaul ClauwsPiotr ŚpiewakKoji SueokaDeren Yang

2015

Electronic properties of manganese impurities in germanium

Johan LauwaertSiegfried SegersFilip MoensKarl OpsomerPaul ClauwsFreddy CallensEddy SimoenHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

2014

Deep-level transient spectroscopy study of quenched-in defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Kristallen verhelderd

Mn related defect levels in germanium

Johan LauwaertFilip MoensSiegfried SegersKarl OpsomerEddy SimoenJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

2013

Temperature independent slow hole emission from transition metal centers in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Tunnel emission from Co and Cr-related levels in p-type Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

2012

A temperature independent emission component in the capacitance transients of deep-level defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenFreddy CallensJan VanhellemontHenk Vrielinck

Electronic properties of iron and cobalt impurity centres in germanium

Johan LauwaertJan VanhellemontE SimoenHenk VrielinckPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

2011

DLTS and FTIR study of quenching induced defects in germanium

Siegfried SegersJohan LauwaertHenk VrielinckPaul ClauwsFreddy CallensEddy SimoenJan Vanhellemont

Field-enhanced electron capture by iron impurities in germanium

Johan LauwaertSiegfried SegersEddy SimoenDiederik DeplaJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

2010

Defect creation and passivation by hydrogen plasma in silicon and germanium

Johan LauwaertEddy SimoenFreddy CallensHenk VrielinckPaul Clauws

Majority carrier capture rates for transition metal impurities in germanium

Johan LauwaertPaul Clauws

A1 Journal Article in THIN SOLID FILMS

2009

Decay mechanism of the nu(3) 865 cm(-1) vibration of oxygen in crystalline germanium

Gordon DaviesKK KohliPaul ClauwsNQ Vinh

A1 Journal Article in PHYSICAL REVIEW B

Electronic properties of titanium and chromium impurity centers in germanium

Johan LauwaertJochen Van GheluweJan VanhellemontEddy SimoenPaul Clauws

A1 Journal Article in Journal of Applied Physics

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Jan VanhellemontJohan LauwaertA WiteckaP SpiewakI RomandicPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys

KK KohliNQ VinhPaul ClauwsG Davies

A1 Journal Article in PHYSICA B-CONDENSED MATTER

What do we know about hydrogen-induced thermal donors in silicon?

E SimoenYL HuangY MaJohan LauwaertPaul ClauwsJM RafiA UlyashinC Claeys

A1 Journal Article in Journal of the Electrochemical Society

2008

An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data

Johan LauwaertJochen Van GheluwePaul Clauws

A1 Journal Article in REVIEW OF SCIENTIFIC INSTRUMENTS

Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium

Johan LauwaertJens Van GheluwePaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electronic Properties of Transition Metal related Defects in Germanium

Paul ClauwsJohan Lauwaert

Gallium interstitial in irradiated germanium : deep level transient spectroscopy

V KolkovskyMC PetersenA MesliJochen Van GheluwePaul ClauwsAN Larsen

A1 Journal Article in PHYSICAL REVIEW B

Metal in-diffusion during Fe and co-germanidation of germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

2007

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

YL HUANGE SIMOENC CLAEYSJM RAFIPaul Clauws

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond

Andriy HikavyyPaul ClauwsKarel VanbesienPatrick De VisschereOA WILLIAMSM DAENENK HAENENJE BUTLERT FEYGELSON

A1 Journal Article in DIAMOND AND RELATED MATERIALS

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

E GAUBASJan VanhellemontE SIMOENI ROMANDICW GEENSPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Deep level transient spectroscopy of transition metal impurities in germanium

Paul ClauwsJochen Van GheluweJohan LauwaertE SIMOENJan VanhellemontM MEURISAntoon Theuwis

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Electrical passivation by hydrogen of substitutional cobalt in monocrystalline germanium

Johan LauwaertJochen Van GheluwePaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium.

Johan LauwaertJérémie De BaerdemaekerCharles DauwePaul Clauws

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Lifetime and leakage current considerations in metal-doped germanium

E SIMOENC CLAEYSS SIONCKEJ VAN STEENBERGENM MEURISStefaan FormentJan VanhellemontPaul ClauwsAntoon Theuwis

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

On the impact of metal impurities on the carrier lifetime in n-type germanium

E GAUBASJan VanhellemontE SIMOENPaul ClauwsAntoon Theuwis

Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Study of thin film CuInS2-on-Cu-tape (CISCuT) solar cells using deep level transient spectroscopy (DLTS)

Jochen Van GheluwePaul Clauws

A1 Journal Article in THIN SOLID FILMS

2006

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon

Jan VanhellemontOlivier DE GRYSEPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMERE SIMOENC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A deep-level transient spectroscopy study of transition metals in n-type germanium

Stefaan FormentJan VanhellemontPaul ClauwsJ VAN STEENBERGENS SIONCKEM MEURISE SIMOENAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A photoluminescence and structural analysis of CuInS2-on-Cu-tape solar cells (CISCuT)

Jochen Van GheluweJorg VersluysDirk PoelmanJohan VerschraegenMarc BurgelmanPaul Clauws

A1 Journal Article in THIN SOLID FILMS

An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films

Andriy HikavyyPaul ClauwsJ MAESVV MOSHCHALKOVJE BUTLERT FEYGELSONOA WILLIAMSM DAENENK HAENEN

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

Olivier De GryseJan VanhellemontPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium

Johan LauwaertML DAVIDMF BEAUFORTE SIMOENDiederik DeplaPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

YL HUANGE SIMOENC CLAEYSJM RAFIPaul ClauwsR JOBWR FAHRNER

A1 Journal Article in APPLIED PHYSICS LETTERS

Infrared analysis of the precipitated oxide phase in silicon and germanium

O DE GRYSEPiet VanmeerbeekJan VanhellemontPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy

Andriy HikavyyPaul ClauwsW DEFERMEG BOGDANK HAENENM NESLADEK

A1 Journal Article in DIAMOND AND RELATED MATERIALS

Metals in germanium

Paul ClauwsE SIMOEN

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Point-defect generation in Ni-,Pd-, and Pt-germanided Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

P SPIEWAKKJ KURZYDLOWSKIJan VanhellemontPaul ClauwsP WABINSKIK MLYNARCZYKI ROMANDICAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Simulation of point defect diffusion in germanium

Johan LauwaertS HENSP SPIEWAKD WAUTERSDirk PoelmanI ROMANDICPaul ClauwsJan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2005

A PHOTOLUMINESCENCE AND STRUCTURAL ANALYSIS OF CuInS_2 – ON-Cu-TAPE SOLAR CELLS (CISCuT)

Jochen Van GheluweJorg VersluysDirk PoelmanJohan VerschraegenMarc BurgelmanPaul Clauws

Critical precipitate size revisited and implications for oxygen precipitation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

YL HUANGE SIMOENC CLAEYSR JOBY MAW DUNGENWR FAHRNERJorg VersluysPaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI

Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

S HENSJan VanhellemontDirk PoelmanPaul ClauwsI ROMANDICAntoon TheuwisF HOLSTEYNSJ VAN STEENBERGEN

A1 Journal Article in APPLIED PHYSICS LETTERS

Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

JM RAFIE SIMOENC CLAEYSYL HUANGAG ULYASHINR JOBJorg VersluysPaul ClauwsM LOZANOF CAMPABADAL

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

YL HUANGE SIMOENR JOBC CLAEYSW DUNGENY MAWR FAHRNERJorg VersluysPaul Clauws

PTIS investigation of hydrogenated CVD diamond films

Andriy HikavyyPaul ClauwsW DEFERMEG BOGDANK HAENENM NESLADEK

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Photoluminescence study of polycrystalline CdS/CdTe thin film solar cells

Jochen Van GheluweJorg VersluysDirk PoelmanPaul Clauws

A1 Journal Article in THIN SOLID FILMS

Precipitation and extended defect formation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon

Jan VanhellemontS HENSJohan LauwaertO DE GRYSEPiet VanmeerbeekDirk PoelmanP SPIEWAKI ROMANDICAntoon TheuwisPaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI

2004

Characterization of bulk microdefects in Ge single crystals

Dirk PoelmanO DE GRYSENico De RooOlivier JanssensPaul ClauwsW BRASIP DOLBNYAI ROMANDIC

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

Olivier DE GRYSEPaul ClauwsJan VanhellemontOI LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

DLTS studies of high-temperature electron irradiated Cz n-Si

V NEIMASHM KRAS'KOA KRAITCHINSKIIV VOYTOVYCHV TISHCHENKOE SIMOENJM RAFIC CLAEYSJorg VersluysOlivier De Gryse et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Extended defects in silicon: an old and new story

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

Grown-in lattice defects and diffusion in Czochralski-grown germanium

Jan VanhellemontO DE GRYSES HENSPiet VanmeerbeekDirk PoelmanPaul ClauwsE SIMOENC CLAEYSI ROMANDICAntoon Theuwis et al.

A1 Journal Article in DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII -

High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium

Piet VanmeerbeekPaul ClauwsHenk VrielinckB PajotLuc Van HoorebekeAN Larsen

A1 Journal Article in PHYSICAL REVIEW B

PHOTOLUMINESCENCE STUDY OF POLYCRYSTALLINE CdS/CdTe THIN FILM SOLAR CELLS

Jochen Van GheluweJorg VersluysDirk PoelmanPaul Clauws

2003

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De GryseJan VanhellemontPaul ClauwsO LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Analysis of oxygen thermal donor formation in n-type Cz silicon

JM RAFIE SIMOENC CLAEYSAG ULYASHINR JOBWR FAHRNERJorg VersluysPaul ClauwsM LOZANOF CAMPABADAL

Analysis of thermal donor formation in n-type CZ silicon

J RAFIE SIMOENC CLAEYSA ULYASHINR JOBW FAHRNERJorg VersluysPaul ClauwsM LOZANOF CAMPABADAL

Characterisation of bulk microdefects in Ge single crystals

Davy WautersDirk PoelmanIgor P DolbnyaWim BrasIgor RomandicPaul Clauws

Characterisation of deep defects in CdS/CdTe thin solar cells using Deep Level Transient Spectroscopy

Jorg VersluysPaul Clauws

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEONC CLAEYSR LOOOlivier De GrysePaul ClauwsR JOBAG ULYASHINW FAHRNER

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Characterization of deep defects in CdS/CdTe thin film solar cells using Deep Level Transient Spectroscopy

Jorg VersluysPaul Clauws

Chemical surface passivation of low resistivity p-type Ge wafers for solar cell applications

Dirk PoelmanPaul ClauwsB DEPUYDT

A1 Journal Article in SOLAR ENERGY MATERIALS AND SOLAR CELLS

DLTS and admittance measurements on CdS/CdTe solar cells

Jorg VersluysPaul ClauwsPeter NolletStefaan DegraveMarc Burgelman

A1 Journal Article in THIN SOLID FILMS

Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

E SIMOENJM RAFIC CLAEYSV NEIMASHA KRAITCHINSKIIM KRAS'KOV TISCHENKOV VOITOVYCHJorg VersluysPaul Clauws

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOENC CLAEYSR JOBAG ULYASHINWR FAHRNERG TONELLIOlivier De GrysePaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-resolution local vibrational mode spectroscopy of the negatively charged oxygen-vacancy complex in germanium

Piet VanmeerbeekPaul ClauwsB PAJOTAN LARSEN

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2002

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Olivier De GrysePaul ClauwsJan VanhellemontO LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.

E SIMOENC CLAEYSV PRIVITERAS COFFAM KOKKORISE KOSSIONIDESG FANOURAKISAN LARSENPaul Clauws

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

E SIMOENC CLAEYSR JOBAG ULYASHINWR FAHRNEROlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

On the nucleation of bulk stacking faults in CZ silicon

Jan VanhellemontOlivier De GrysePaul Clauws

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.

E SIMOENR LOOC CLAEYSOlivier De GrysePaul ClauwsJ VAN LANDUYTO LEBEDEV

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.

O De GrysePaul ClauwsJ Van LanduytO LebedevC ClaeysE SimoenJan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

E SIMOENC CLAEYSR JOBAG ULYASHINWR FAHRNERG TONELLIOlivier De GrysePaul Clauws

2001

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM.

Olivier De GrysePaul ClauwsO LEBEDEVJ VAN LANDUYTJ VANHELLEMONTC CLAEYSE SIMOEN

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Defect analysis of n-type silicon strained layers.

E SIMOENR LOOP ROUSSELM CAYMAXH BENDERC CLAEYSHJ HERZOGAnja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.

SY ZHUChristophe DetavernierRoland VanmeirhaegheFelix CardonAnja BlondeelPaul ClauwsGP RUBZ LI

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Enhanced oxygen dimer and thermal donor formation in irradiated germanium studied by local vibrational mode spectroscopy.

Piet VanmeerbeekPaul ClauwsW MONDELAERS

A1 Journal Article in PHYSICA B-CONDENSED MATTER

High energy proton radiation induced defects in tin doped n-type silicon.

E SIMOENC CLAEYSV PRIVITERAS COFAA LARSENPaul Clauws

A2 Journal Article in PHYSICA B-CONDENSED MATTER

Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation.

Anja BlondeelPaul ClauwsB DEPUYDT

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Local vibrational mode spectroscopy of dimer and other oxygen-related defects in irradiated and thermally annealed germanium

Piet VanmeerbeekPaul Clauws

A1 Journal Article in PHYSICAL REVIEW B

Tin doping of silicon for controlling oxygen precipitation and radiation hardness.

C CLAEYSE SIMOENVB NEIMASHA KRAITCHINSKIIM KRAS'KOO PUZENKOAnja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2000

Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIN KRASKOO PUZENKOAnja BlondeelPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Developments for radiation hard silicon detectors by defect engineering - Results by the CERN RD48 (ROSE) collaboration

G LINDSTROMM AHMEDS ALBERGOP ALLPORTD ANDERSONL ANDRICEKMM ANGARANOV AUGELLIN BACCHETTAP BARTALINI et al.

O isotope effects and vibration-rotation lines of interstitial oxygen in germanium

B PajotPaul ClauwsJL LindströmE Artacho

A1 Journal Article in PHYSICAL REVIEW B

Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon.

Olivier De GrysePaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium.

Anja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Tin doping effects in silicon

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIM KRAS'KOO PUZENKOAnja BlondeelPaul Clauws

Tin-related deep levels in proton-irradiated n-type silicon.

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIN KRASKOO PUZENKOAnja BlondeelPaul Clauws

1999

A BEEM study of PtSi Schottky contacts on ion-milled Si

GP RUChristophe DetavernierRA DONATONAnja BlondeelPaul ClauwsRoland VanmeirhaegheFelix CardonK MAEXXP QUSY ZHU et al.

Accurate infrared absorption measurement of interstitial and precipitated oxygen in p(+) silicon wafers.

O DE GRYSEPaul ClauwsL ROSSOUJ VAN LANDUYTJ VANHELLEMONT

A1 Journal Article in MICROELECTRONIC ENGINEERING

Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon.

O DE GRYSEPaul ClauwsL ROSSOUJ VAN LANDUYTJ VANHELLEMONT

A1 Journal Article in REVIEW OF SCIENTIFIC INSTRUMENTS

Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopy.

Anja BlondeelPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Infrared vibrational mode absorption from thermal donors in germanium.

Paul ClauwsP VANMEERBEEK

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium.

Anja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Quantitative spectroscopic determination of defects in germanium

Paul ClauwsAnja Blondeel

1998

Accurate infrared absorption measurement of interstitial and precipitated oxygen in heavily doped silicon

Olivier De GrysePaul ClauwsL ROSSOUJ VAN LANDUYTJan VanhellemontWilly Mondelaers

Low temperature anneal of electron irradiation induced defects in p type silicon.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VAN BAVELG LANGOUCHEPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND TECHNOLOGY

1997

A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.

Lieve GoubertRoland VanmeirhaeghePaul ClauwsFelix CardonPeter Van Daele

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy.

O DE GRYSEPaul ClauwsJ VANHELLEMONTC CLAEYS

A1 Journal Article in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3

Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge.

D WAUTERSPaul Clauws

A1 Journal Article in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3

Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium.

Anja BlondeelPaul ClauwsD VYNCKE

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Study of recombination properties of neutron transmutation doped silicon wafers.

E GAUBASJ VANHELLEMONTE SIMOENPaul ClauwsHW KRANERG VILKELISAP SMILGA

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1996

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VANBAVELG LANGOUCHEA STESMANSPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Oxygen related defects in germanium.

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

1995

IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.

H OHYAMAJ VANHELLEMONTY TAKAMIK HAYAMAH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND TECHNOLOGY

LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VANBAVELG LANGOUCHEPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VANBAVELG LANGOUCHEA STESMANSPaul Clauws

A1 Journal Article in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4

1994

GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.

J VANHELLEMONTA KANIAVAE SIMOENMA TRAUWAERTC CLAEYSB JOHLANDERR HARBOESORENSENL ADAMSPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.

H OHYAMAJ VANHELLEMONTY TAKAMIK HAYAMAH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.

H OHYAMAJ VANHELLEMONTH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.

H OHYAMAJ VANHELLEMONTH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.

J VANHELLEMONTE SIMOENC CLAEYSA KANIAVAE GAUBASG BOSMANB JOHLANDERL ADAMSPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

1993

FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

J VANHELLEMONTMA TRAUWAERTJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

1992

1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.

J VANHELLEMONTMA TRAUWAERTJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in THIN SOLID FILMS

DLTS of nickel impurities in germanium.

G HUYLEBROECKPaul ClauwsE SIMOENJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon.

E SIMOENK DEBACKKERC CLAEYSPaul Clauws

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

Fabrication of SOI layers on high resistivity silicon substrates

C CLAEYSPaul ClauwsB DIERICKXH MAESE SIMOENJ VAN HELLEMONTG WILLEMSD WOUTERS

STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.

MA TRAUWAERTJ VANHELLEMONTE SIMOENC CLAEYSB JOHLANDERL ADAMSPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

THE SPIN HAMILTONIAN OF THERMAL DONORS IN GERMANIUM.

D ISRAELFreddy CallensPaul ClauwsPaul Matthys

A1 Journal Article in SOLID STATE COMMUNICATIONS

The spin hamiltonian of thermal donors in germanium

D ISRAELFreddy CallensPaul ClauwsPaul Matthys

1991

Bistability of thermal donors in germanium: assignment of far-infrared and electron-paramagnetic-resonance spectra

Paul ClauwsFreddy CallensFiliep MaesJ VENNIKEtienne Boesman

A2 Journal Article in Phys. Rev. B, 44, pp. 3665-3672, 4 figg

DLTS of high-resistivity Si

E SIMOENC CLAEYSG HUYLEBROECKPaul Clauws

Influence of S1CI4 reactive ion etching on the electrical characteristics of GaAs.

D LOOTENSPaul ClauwsPeter Van DaelePiet Demeester

Low temperature annealing of damage induced by SiCL* reactive ion etching.

D LOOTENSPaul ClauwsPeter Van DaelePiet Demeester

OBSERVATION OF SURFACE PHONONS ON THE (001) AND (100) SURFACES OF ANATASE MINERALS

G DURINCKHilde PoelmanPaul ClauwsL FIERMANSJoost VennikG DALMAI

A1 Journal Article in SOLID STATE COMMUNICATIONS

Study of electrical damage in GaAs induced by SiCU reactive ion etching.

D LOOTENSPeter Van DaelePiet DemeesterPaul Clauws

A2 Journal Article in Journal Appl. Phys.

Study of electrical damage in GaAs induced by SiCl4 reactive ion etching

Daniella LootensPeter Van DaelePiet DemeesterPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Spectroscopische identificatie en studie van de fysische eigenschappen van thermische donors in zuurstofrijk germanium. Proefschrift Aggregatie Hoger Onderwijs, R.U.G., Gent, 1991, (317 p.).