Research Explorer

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Researcher

Paul Clauws

Publications & Research Data

Awards & Distinctions

201 Results

2016

Jan Vanhellemont : 35 years of materials research in microelectronics

Gudrun KissingerEddy SimoenCor ClaeysPaul ClauwsPiotr ŚpiewakKoji SueokaDeren Yang

2015

Electronic properties of manganese impurities in germanium

Johan LauwaertSiegfried SegersFilip MoensKarl OpsomerPaul ClauwsFreddy CallensEddy SimoenHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

2014

Deep-level transient spectroscopy study of quenched-in defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Kristallen verhelderd

Mn related defect levels in germanium

Johan LauwaertFilip MoensSiegfried SegersKarl OpsomerEddy SimoenJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

2013

Temperature independent slow hole emission from transition metal centers in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

Tunnel emission from Co and Cr-related levels in p-type Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

2012

A temperature independent emission component in the capacitance transients of deep-level defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenFreddy CallensJan VanhellemontHenk Vrielinck

Electronic properties of iron and cobalt impurity centres in germanium

Johan LauwaertJan VanhellemontE SimoenHenk VrielinckPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

2011

DLTS and FTIR study of quenching induced defects in germanium

Siegfried SegersJohan LauwaertHenk VrielinckPaul ClauwsFreddy CallensEddy SimoenJan Vanhellemont

Field-enhanced electron capture by iron impurities in germanium

Johan LauwaertSiegfried SegersEddy SimoenDiederik DeplaJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

2010

Defect creation and passivation by hydrogen plasma in silicon and germanium

Johan LauwaertEddy SimoenFreddy CallensHenk VrielinckPaul Clauws

Majority carrier capture rates for transition metal impurities in germanium

Johan LauwaertPaul Clauws

A1 Journal Article in THIN SOLID FILMS

2009

Decay mechanism of the nu(3) 865 cm(-1) vibration of oxygen in crystalline germanium

Gordon DaviesKK KohliPaul ClauwsNQ Vinh

A1 Journal Article in PHYSICAL REVIEW B

Electronic properties of titanium and chromium impurity centers in germanium

Johan LauwaertJochen Van GheluweJan VanhellemontEddy SimoenPaul Clauws

A1 Journal Article in Journal of Applied Physics

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Jan VanhellemontJohan LauwaertA WiteckaP SpiewakI RomandicPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys

KK KohliNQ VinhPaul ClauwsG Davies

A1 Journal Article in PHYSICA B-CONDENSED MATTER

What do we know about hydrogen-induced thermal donors in silicon?

E SimoenYL HuangY MaJohan LauwaertPaul ClauwsJM RafiA UlyashinC Claeys

A1 Journal Article in Journal of the Electrochemical Society

2008

An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data

Johan LauwaertJochen Van GheluwePaul Clauws

A1 Journal Article in REVIEW OF SCIENTIFIC INSTRUMENTS

Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium

Johan LauwaertJens Van GheluwePaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electronic Properties of Transition Metal related Defects in Germanium

Paul ClauwsJohan Lauwaert

Gallium interstitial in irradiated germanium : deep level transient spectroscopy

V KolkovskyMC PetersenA MesliJochen Van GheluwePaul ClauwsAN Larsen

A1 Journal Article in PHYSICAL REVIEW B

Metal in-diffusion during Fe and co-germanidation of germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

2007

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

YL HUANGE SIMOENC CLAEYSJM RAFIPaul Clauws

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond

Andriy HikavyyPaul ClauwsKarel VanbesienPatrick De VisschereOA WILLIAMSM DAENENK HAENENJE BUTLERT FEYGELSON

A1 Journal Article in DIAMOND AND RELATED MATERIALS

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

E GAUBASJan VanhellemontE SIMOENI ROMANDICW GEENSPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Deep level transient spectroscopy of transition metal impurities in germanium

Paul ClauwsJochen Van GheluweJohan LauwaertE SIMOENJan VanhellemontM MEURISAntoon Theuwis

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Electrical passivation by hydrogen of substitutional cobalt in monocrystalline germanium

Johan LauwaertJochen Van GheluwePaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium.

Johan LauwaertJérémie De BaerdemaekerCharles DauwePaul Clauws

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Lifetime and leakage current considerations in metal-doped germanium

E SIMOENC CLAEYSS SIONCKEJ VAN STEENBERGENM MEURISStefaan FormentJan VanhellemontPaul ClauwsAntoon Theuwis

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

On the impact of metal impurities on the carrier lifetime in n-type germanium

E GAUBASJan VanhellemontE SIMOENPaul ClauwsAntoon Theuwis

Point-defect generation in ni-, pd-, and pt-germanide Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Study of thin film CuInS2-on-Cu-tape (CISCuT) solar cells using deep level transient spectroscopy (DLTS)

Jochen Van GheluwePaul Clauws

A1 Journal Article in THIN SOLID FILMS

2006

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon

Jan VanhellemontOlivier DE GRYSEPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K OPSOMERE SIMOENC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A deep-level transient spectroscopy study of transition metals in n-type germanium

Stefaan FormentJan VanhellemontPaul ClauwsJ VAN STEENBERGENS SIONCKEM MEURISE SIMOENAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A photoluminescence and structural analysis of CuInS2-on-Cu-tape solar cells (CISCuT)

Jochen Van GheluweJorg VersluysDirk PoelmanJohan VerschraegenMarc BurgelmanPaul Clauws

A1 Journal Article in THIN SOLID FILMS

An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films

Andriy HikavyyPaul ClauwsJ MAESVV MOSHCHALKOVJE BUTLERT FEYGELSONOA WILLIAMSM DAENENK HAENEN

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

E SIMOENK OPSOMERC CLAEYSK MAEXChristophe DetavernierRoland VanmeirhaeghePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

Olivier De GryseJan VanhellemontPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium

Johan LauwaertML DAVIDMF BEAUFORTE SIMOENDiederik DeplaPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

YL HUANGE SIMOENC CLAEYSJM RAFIPaul ClauwsR JOBWR FAHRNER

A1 Journal Article in APPLIED PHYSICS LETTERS

Infrared analysis of the precipitated oxide phase in silicon and germanium

O DE GRYSEPiet VanmeerbeekJan VanhellemontPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy

Andriy HikavyyPaul ClauwsW DEFERMEG BOGDANK HAENENM NESLADEK

A1 Journal Article in DIAMOND AND RELATED MATERIALS

Metals in germanium

Paul ClauwsE SIMOEN

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Point-defect generation in Ni-,Pd-, and Pt-germanided Schottky barriers on n-type germanium

Eddy R SimoenKarl OpsomerCL ClaeysKaren MaexChristophe DetavernierRoland VanmeirhaegheStefaan FormentPaul Clauws

Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

P SPIEWAKKJ KURZYDLOWSKIJan VanhellemontPaul ClauwsP WABINSKIK MLYNARCZYKI ROMANDICAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Simulation of point defect diffusion in germanium

Johan LauwaertS HENSP SPIEWAKD WAUTERSDirk PoelmanI ROMANDICPaul ClauwsJan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2005

A PHOTOLUMINESCENCE AND STRUCTURAL ANALYSIS OF CuInS_2 – ON-Cu-TAPE SOLAR CELLS (CISCuT)

Jochen Van GheluweJorg VersluysDirk PoelmanJohan VerschraegenMarc BurgelmanPaul Clauws

Critical precipitate size revisited and implications for oxygen precipitation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon

YL HUANGE SIMOENC CLAEYSR JOBY MAW DUNGENWR FAHRNERJorg VersluysPaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI

Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

S HENSJan VanhellemontDirk PoelmanPaul ClauwsI ROMANDICAntoon TheuwisF HOLSTEYNSJ VAN STEENBERGEN

A1 Journal Article in APPLIED PHYSICS LETTERS

Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon

JM RAFIE SIMOENC CLAEYSYL HUANGAG ULYASHINR JOBJorg VersluysPaul ClauwsM LOZANOF CAMPABADAL

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon

YL HUANGE SIMOENR JOBC CLAEYSW DUNGENY MAWR FAHRNERJorg VersluysPaul Clauws

Photoluminescence study of polycrystalline CdS/CdTe thin film solar cells

Jochen Van GheluweJorg VersluysDirk PoelmanPaul Clauws

A1 Journal Article in THIN SOLID FILMS

Precipitation and extended defect formation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

PTIS investigation of hydrogenated CVD diamond films

Andriy HikavyyPaul ClauwsW DEFERMEG BOGDANK HAENENM NESLADEK

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon

Jan VanhellemontS HENSJohan LauwaertO DE GRYSEPiet VanmeerbeekDirk PoelmanP SPIEWAKI ROMANDICAntoon TheuwisPaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI

2004

Characterization of bulk microdefects in Ge single crystals

Dirk PoelmanO DE GRYSENico De RooOlivier JanssensPaul ClauwsW BRASIP DOLBNYAI ROMANDIC

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

Olivier DE GRYSEPaul ClauwsJan VanhellemontOI LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

DLTS studies of high-temperature electron irradiated Cz n-Si

V NEIMASHM KRAS'KOA KRAITCHINSKIIV VOYTOVYCHV TISHCHENKOE SIMOENJM RAFIC CLAEYSJorg VersluysOlivier De Gryse et al.

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Extended defects in silicon: an old and new story

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

Grown-in lattice defects and diffusion in Czochralski-grown germanium

Jan VanhellemontO DE GRYSES HENSPiet VanmeerbeekDirk PoelmanPaul ClauwsE SIMOENC CLAEYSI ROMANDICAntoon Theuwis et al.

A1 Journal Article in DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII -

High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium

Piet VanmeerbeekPaul ClauwsHenk VrielinckB PajotLuc Van HoorebekeAN Larsen

A1 Journal Article in PHYSICAL REVIEW B

PHOTOLUMINESCENCE STUDY OF POLYCRYSTALLINE CdS/CdTe THIN FILM SOLAR CELLS

Jochen Van GheluweJorg VersluysDirk PoelmanPaul Clauws

2003

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De GryseJan VanhellemontPaul ClauwsO LebedevJ Van LanduytEddy SimoenC Claeys

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Analysis of oxygen thermal donor formation in n-type Cz silicon

JM RAFIE SIMOENC CLAEYSAG ULYASHINR JOBWR FAHRNERJorg VersluysPaul ClauwsM LOZANOF CAMPABADAL

Analysis of thermal donor formation in n-type CZ silicon

J RAFIE SIMOENC CLAEYSA ULYASHINR JOBW FAHRNERJorg VersluysPaul ClauwsM LOZANOF CAMPABADAL

Characterisation of bulk microdefects in Ge single crystals

Davy WautersDirk PoelmanIgor P DolbnyaWim BrasIgor RomandicPaul Clauws

Characterisation of deep defects in CdS/CdTe thin solar cells using Deep Level Transient Spectroscopy

Jorg VersluysPaul Clauws

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEONC CLAEYSR LOOOlivier De GrysePaul ClauwsR JOBAG ULYASHINW FAHRNER

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Characterization of deep defects in CdS/CdTe thin film solar cells using Deep Level Transient Spectroscopy

Jorg VersluysPaul Clauws

Chemical surface passivation of low resistivity p-type Ge wafers for solar cell applications

Dirk PoelmanPaul ClauwsB DEPUYDT

A1 Journal Article in SOLAR ENERGY MATERIALS AND SOLAR CELLS

Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

E SIMOENJM RAFIC CLAEYSV NEIMASHA KRAITCHINSKIIM KRAS'KOV TISCHENKOV VOITOVYCHJorg VersluysPaul Clauws

A1 Journal Article in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS

Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

E SIMOENC CLAEYSR JOBAG ULYASHINWR FAHRNERG TONELLIOlivier De GrysePaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

DLTS and admittance measurements on CdS/CdTe solar cells

Jorg VersluysPaul ClauwsPeter NolletStefaan DegraveMarc Burgelman

A1 Journal Article in THIN SOLID FILMS

High-resolution local vibrational mode spectroscopy of the negatively charged oxygen-vacancy complex in germanium

Piet VanmeerbeekPaul ClauwsB PajotAN Larsen

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2002

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Olivier De GrysePaul ClauwsJan VanhellemontO LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

Eddy SimoenC ClaeysV PriviteraS CoffaM KokkorisE KossionidesG FanourakisAN LarsenPaul Clauws

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

Eddy SimoenC ClaeysR JobAG UlyashinWR FahrnerOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

On the nucleation of bulk stacking faults in CZ silicon

Jan VanhellemontOlivier De GrysePaul Clauws

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

Eddy SimoenR LooC ClaeysOlivier De GrysePaul ClauwsJ Van LanduytO Lebedev

A1 Journal Article in JOURNAL OF PHYSICS-CONDENSED MATTER

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

O De GrysePaul ClauwsJ Van LanduytO LebedevC ClaeysE SimoenJan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

Eddy SimoenC ClaeysR JobAG UlyashinWR FahrnerG TonelliOlivier De GrysePaul Clauws

2001

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

Olivier De GrysePaul ClauwsO LebedevJ Van LanduytJ VanhellemontC ClaeysEddy Simoen

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Defect analysis of n-type silicon strained layers

Eddy SimoenR LooP RousselM CaymaxH BenderC ClaeysHJ HerzogAnja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Developments for radiation hard silicon detectors by defect engineering : results by the CERN RD48 (ROSE) Collaboration

G LindströmM AhmedS AlbergoP AllportD AndersonL AndricekMM AngaranoV AugelliN BacchettaP Bartalini et al.

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.

SY ZHUChristophe DetavernierRoland VanmeirhaegheFelix CardonAnja BlondeelPaul ClauwsGP RUBZ LI

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Enhanced oxygen dimer and thermal donor formation in irradiated germanium studied by local vibrational mode spectroscopy

Piet VanmeerbeekPaul ClauwsWilly Mondelaers

A1 Journal Article in PHYSICA B-CONDENSED MATTER

High energy proton radiation induced defects in tin-doped n-type silicon

Eddy SimoenC ClaeysV PriviteraS CoffaA LarsenPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation

Anja BlondeelPaul ClauwsB Depuydt

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Local vibrational mode spectroscopy of dimer and other oxygen-related defects in irradiated and thermally annealed germanium

Piet VanmeerbeekPaul Clauws

A1 Journal Article in PHYSICAL REVIEW B

Radiation hard silicon detectors : developments by the RD48 (ROSE) collaboration

G LindströmM AhmedS AlbergoP AllportD AndersonL AndricekMM AngaranoV AugelliN BacchettaP Bartalini et al.

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Tin doping of silicon for controlling oxygen precipitation and radiation hardness

C ClaeysEddy SimoenVB NeimashA KraitchinskiiM Kras’koO PuzenkoAnja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2000

Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon

Eddy SimoenC ClaeysVB NeimashA KraitchinskiiN KraskoO PuzenkoAnja BlondeelPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Developments for radiation hard silicon detectors by defect engineering - Results by the CERN RD48 (ROSE) collaboration

G LINDSTROMM AHMEDS ALBERGOP ALLPORTD ANDERSONL ANDRICEKMM ANGARANOV AUGELLIN BACCHETTAP BARTALINI et al.

O isotope effects and vibration-rotation lines of interstitial oxygen in germanium

B PajotPaul ClauwsJL LindströmE Artacho

A1 Journal Article in PHYSICAL REVIEW B

Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon

Olivier De GrysePaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Quantitative optical variants of deep level transient spectroscopy : application to high purity germanium

Anja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Tin doping effects in silicon

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIM KRAS'KOO PUZENKOAnja BlondeelPaul Clauws

Tin-related deep levels in proton-irradiated n-type silicon.

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIN KRASKOO PUZENKOAnja BlondeelPaul Clauws

1999

A BEEM study of PtSi Schottky contacts on ion-milled Si

GP RuChristophe DetavernierRA DonatonAnja BlondeelPaul ClauwsRoland VanmeirhaegheFelix CardonK MaexXP QuSY Zhu et al.

Accurate infrared absorption measurement of interstitial and 1 precipitated oxygen in p silicon wafers

Olivier De GrysePaul ClauwsL. RossouJ. Van LanduytJ. Vanhellemont

A1 Journal Article in MICROELECTRONIC ENGINEERING

Accurate infrared absorption measurement of interstitial and precipitated oxygen in p(+) silicon wafers.

O DE GRYSEPaul ClauwsL ROSSOUJ VAN LANDUYTJ VANHELLEMONT

A1 Journal Article in MICROELECTRONIC ENGINEERING

Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon

Olivier De GrysePaul ClauwsL RossouJ Van LanduytJan Vanhellemont

A1 Journal Article in REVIEW OF SCIENTIFIC INSTRUMENTS

Deep defects in n-type high-purity germanium : quantification of optical variants of deep level transient spectroscopy

Anja BlondeelPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Infrared vibrational mode absorption from thermal donors in germanium

Paul ClauwsPiet Vanmeerbeek

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium

Anja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Quantitative spectroscopic determination of defects in germanium

Paul ClauwsAnja Blondeel

1998

Accurate infrared absorption measurement of interstitial and precipitated oxygen in heavily doped silicon

Olivier De GrysePaul ClauwsL ROSSOUJ VAN LANDUYTJan VanhellemontWilly Mondelaers

Low temperature anneal of electron irradiation induced defects in p type silicon.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VAN BAVELG LANGOUCHEPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND TECHNOLOGY

1997

A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.

Lieve GoubertRoland VanmeirhaeghePaul ClauwsFelix CardonPeter Van Daele

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy.

O DE GRYSEPaul ClauwsJ VANHELLEMONTC CLAEYS

A1 Journal Article in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3

Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge.

D WAUTERSPaul Clauws

A1 Journal Article in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3

Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium

Anja BlondeelPaul ClauwsD Vyncke

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Study of recombination properties of neutron transmutation doped silicon wafers.

E GAUBASJ VANHELLEMONTE SIMOENPaul ClauwsHW KRANERG VILKELISAP SMILGA

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1996

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VANBAVELG LANGOUCHEA STESMANSPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Oxygen related defects in germanium

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

1995

IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE.

H OHYAMAJ VANHELLEMONTY TAKAMIK HAYAMAH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND TECHNOLOGY

LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VANBAVELG LANGOUCHEPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C.

MA TRAUWAERTJ VANHELLEMONTHE MAESAM VANBAVELG LANGOUCHEA STESMANSPaul Clauws

A1 Journal Article in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4

1994

GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.

J VANHELLEMONTA KANIAVAE SIMOENMA TRAUWAERTC CLAEYSB JOHLANDERR HARBOESORENSENL ADAMSPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEX EPITAXIAL DEVICES.

H OHYAMAJ VANHELLEMONTY TAKAMIK HAYAMAH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION.

H OHYAMAJ VANHELLEMONTH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES.

H OHYAMAJ VANHELLEMONTH SUNAGAJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.

J VANHELLEMONTE SIMOENC CLAEYSA KANIAVAE GAUBASG BOSMANB JOHLANDERL ADAMSPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

1993

FAST DEGRADATION OF BORON-DOPED STRAINED SI(1-X)GEX LAYERS BY 1-MEV ELECTRON-IRRADIATION.

J VANHELLEMONTMA TRAUWAERTJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Fast degradation of boron-doped strained Si(1-x)Gex layers by d=MeV electron irradiation

J. VanhellemontM.-A. TrauwaertJ. PoortmansM. CaymaxPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

1992

1 MeV electron irradiation induced degradation of boron-doped strained Si-x Gex layers

J. VanhellemontM.-A. TrauwaertJ. PoortmansM. CaymaxPaul Clauws

A1 Journal Article in THIN SOLID FILMS

1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.

J VANHELLEMONTMA TRAUWAERTJ POORTMANSM CAYMAXPaul Clauws

A1 Journal Article in THIN SOLID FILMS

Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

Eddy SimoenK De BackkerC ClaeysPaul Clauws

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

DLTS of nickel impurities in germanium

Guy HuylebroeckPaul ClauwsEddy SimoenJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Fabrication of SOI layers on high resistivity silicon substrates

C CLAEYSPaul ClauwsB DIERICKXH MAESE SIMOENJ VAN HELLEMONTG WILLEMSD WOUTERS

Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes

MA TrauwaertJan VanhellemontEddy SimoenC ClaeysB JohlanderL AdamsPaul Clauws

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

The spin hamiltonian of thermal donors in germanium

D ISRAELFreddy CallensPaul ClauwsPaul Matthys

The spin Hamiltonian of thermal donors in germanium

D IsraëlFreddy CallensPaul ClauwsPaul Matthys

A1 Journal Article in SOLID STATE COMMUNICATIONS

1991

Bistability of thermal donors in germanium : assignment of far-infrared and electron-paramagnetic-resonance spectra

Paul ClauwsFreddy CallensFiliep MaesJoost VennikEtienne Boesman

A1 Journal Article in PHYSICAL REVIEW B

Bistability of thermal donors in germanium investigated by fare-IR spectroscopy

Paul ClauwsJoost Vennik

Calculation of FeB pairing in p-Si at room temperature for low B-concentrations

Els RotsaertPaul ClauwsEddy SimoenJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

DLTS of high-resistivity Si

Eddy SimoenCor ClaeysGuy HuylebroeckPaul Clauws

Influence of S1CI4 reactive ion etching on the electrical characteristics of GaAs.

D LOOTENSPaul ClauwsPeter Van DaelePiet Demeester

Low temperature annealing of damage induced by SiCL* reactive ion etching.

D LOOTENSPaul ClauwsPeter Van DaelePiet Demeester

Observation of surface phonons on the (001) and (100) surfaces of anatase minerals

Guy DurinckHilde PoelmanPaul ClauwsLucien FiermansJoost VennikG Dalmai

A1 Journal Article in SOLID STATE COMMUNICATIONS

Spectroscopische methodes voor de bepaling van defecten in halfgeleiders : identificatie en studie van de fysische eigenschappen van thermische donors in zuurstofrijk germanium

Study of electrical damage in GaAs induced by SiCl4 reactive ion etching

Daniella LootensPeter Van DaelePiet DemeesterPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Study of electrical damage in GaAs induced by SiCU reactive ion etching.

D LOOTENSPeter Van DaelePiet DemeesterPaul Clauws

A2 Journal Article in Journal Appl. Phys.

1990

Metastable thermal donor states in germanium : identification by electron paramagnetic resonance

H.H.P.Th. BekmanT. GregorkiewiczL.F.A. HidayatC.A.J. AmmerlaanPaul Clauws

A1 Journal Article in PHYSICAL REVIEW B

On the determination of the defect parameters of repulsive centers by deep level transient spectroscopy

Guy HuylebroeckPaul ClauwsJoost Vennik

A1 Journal Article in SOLID-STATE ELECTRONICS

Positron annihilation studies of defects in helium-irradiated silicon

Motoko KweteDanny SegersMaurice DorikensLiliane VanpraetPaul ClauwsD. Geshef

A1 Journal Article in PHYSICS LETTERS A

Positron annihilation study of defects created in silicon irradiated with electrons of high energy

Motoko KweteDanny SegersMaurice DorikensLiliane VanpraetPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

1989

Absorption cross sections in the far-IR spectrum of elemental shallow donors and acceptors in germanium

Els RotsaertPaul ClauwsJoost VennikL Van Goethem

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

DLTS of silver in germanium : evidence for an amphoteric impurity

Guy HuylebroeckPaul ClauwsEddy SimoenEls RotsaertJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DLTS of the third acceptor level of substitutional copper in germanium

Paul ClauwsGuy HuylebroeckEddy SimoenPeter VermaerckeF. De SmetJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electron paramagnetic resonance of thermal donors in germanium

Felix CardonPaul ClauwsPaul MatthysEtienne BoesmanJoost Vennik

A1 Journal Article in PHYSICAL REVIEW B

Metastable thermal donor states in germanium identified by far-IR spectroscopy

Paul ClauwsJoost Vennik

Bookchapter in Materials Science Forum Vols. 38-41

Temperature characteristics of positron trapping at defects in electron-irradiated silicon

Motoko KweteDanny SegersMaurice DorikensLiliane VanpraetPaul ClauwsIgnace Lemahieu

A1 Journal Article in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

1988

Oscillator strengths of shallow impurity spectra in germanium and silicon

Paul ClauwsJan BroeckxEls RotsaertJoost Vennik

A1 Journal Article in PHYSICAL REVIEW B

Simulation of far-IR absorption and PTI-spectra of shallow impurities in compensated germanium

Els RotsaertPaul ClauwsJoost Vennik

1987

Absorption strengths in the far-IR spectrum of shallow donors and acceptors in germanium

Els RotsaertPaul ClauwsJoost VennikL. Van Goethem

A1 Journal Article in PHYSICA B & C

DLTS of gold impurities in germanium

Eddy SimoenPaul ClauwsGuy HuylebroeckJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High resolution local mode spectroscopy of oxygen in germanium

Bernard PajotPaul Clauws

1986

Correlation between deep-level parameters and energy resolution of p-type high purity Ge γ-detectors

Eddy SimoenPaul ClauwsGuy HuylebroeckJoost VennikL. Van GoethemM. Van SandeL. De LaetH.J. Guislain

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Effective-mass states for prolate an oblate ellipsoid bands

Jan BroeckxPaul ClauwsJoost Vennik

A1 Journal Article in JOURNAL OF PHYSICS C-SOLID STATE PHYSICS

Far-IR spectroscopy of oxygen donors in germanium

Paul ClauwsJoost Vennik

A2 Journal Article in MATERIALS SCIENCE FORUM

Signature and capture cross section of copper-related hole traps in p-type high-purity germanium

Eddy SimoenPaul ClauwsMarcel LamonJoost Vennik

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1985

DLTS of grown-in dislocations in p- and n-type high-purity germanium

Eddy SimoenPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Excitation spectrum of D0 and D+ states of double donors in oxygen doped germanium

Paul ClauwsJoost Vennik

Lattice vibrations of V2O5 : calculation of normal vibrations in a Urey-Bradley force field

Paul ClauwsJan BroeckxJoost Vennik

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

The determination of deep level concentrations in high resistivity semiconductors by DLTS, with special reference to germanium

Eddy SimoenPaul ClauwsJoost Vennik

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

1984

Spectroscopic observation of double donors in oxygen-doped germanium

Paul ClauwsJoost Vennik

A1 Journal Article in PHYSICAL REVIEW B

1983

New methods for the characterization of electrically active defects in semiconductors : PTIS and DLTS

Paul ClauwsJan BroeckxEddy SimoenM. LamonGuy HuylebroeckJoost Vennik

A2 Journal Article in PHYSICALIA MAGAZINE

1982

Correlation between DLTS-measurements and the performance of high purity germanium detectors

Eddy SimoenPaul ClauwsJan BroeckxJoost VennikM. Van SandeL. De Laet

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

DLTS and FTIS of new donors in oxygen-doped germanium

Paul ClauwsJan BroeckxEddy SimoenJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Far-infrared photoconductivity spectra of quenched-in acceptors in germanium : chemical effects on the SA1 acceptors

Jan BroeckxY. KamiuraPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

1981

A PTIS study of quenched-in acceptors in germanium

Y. KamiuraJan BroeckxPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Far-infrared photoconductivity spectra of quenched-in acceptors in germanium : absorption and photo-thermal ionization lines of two new shallow acceptors

Jan BroeckxY. KamiuraPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

1980

Electronic structure of the 'fast donor' in high-purity germanium

Jan BroeckxPaul ClauwsJoost Vennik

A1 Journal Article in JOURNAL OF PHYSICS C-SOLID STATE PHYSICS

Infrared vibration spectra of semiconducting V6O13

W.P. Van HovePaul ClauwsJoost Vennik

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optical properties of V6O13 single crystals in the metallic and the semiconducting phase

W. Van HovePaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Single crystal V2O5 and lower oxides : a survey of their electronic, optical, structural, and surface properties

Lucien FiermansPaul ClauwsWalter LambrechtLuc VandenbrouckeJoost Vennik

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

The energy band structure of V2O5 : II. Analysis of the theoretical results and comparison with experimental data

Walter LambrechtBahram Djafari-RouhaniM. LannooPaul ClauwsLucien FiermansJoost Vennik

A1 Journal Article in JOURNAL OF PHYSICS C-SOLID STATE PHYSICS

1979

A PTIS study of shallow defects in high-purity germanium

Paul ClauwsK. Van den SteenJan BroeckxW.P. Schoenmaekers

Carrier trapping in high-purity germanium

W.K.H. SchoenmaekersPaul ClauwsK. Van den SteenJan BroeckxR. Henck

A1 Journal Article in IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Zeeman effect in the excitation spectra of shallow acceptors in germanium : experimental

Jan BroeckxPaul ClauwsK. Van den SteenJoost Vennik

A1 Journal Article in JOURNAL OF PHYSICS C-SOLID STATE PHYSICS

1978

A coherent model for deep-level photoluminescence of Cu contaminated N-type GaAs single crystals

H. J. GuislainLuc De WolfPaul Clauws

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

A new method for calculating the Zeeman split acceptor levels in cubic semiconductors

Jan BroeckxPaul Clauws

A1 Journal Article in SOLID STATE COMMUNICATIONS

Defect structures in V2O5 and its lower oxides

Lucien FiermansPaul ClauwsWilly Dekeyser

A1 Journal Article in CANADIAN MINERALOGIST

EPR spectrum of the oxygen vacancy in single crystals V2O5

Marc VanhaelstPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

The far I.R. photoconductivity spectrum of the Zeeman-splitting of the Al acceptor levels in Ge(B/[001] and B/[110])

Jan BroeckxPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

1977

Stoichiometry of melt-grown N-type GaAs revealed by photoluminescence measurements

H.J. GuislainL. De WolfPaul Clauws

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

The fir-absorption of V2O5 single crystals doped with monovalent interstitial impurities : Li, Na, Cu

Jan BroeckxPaul ClauwsJoost Vennik

A1 Journal Article in SOLID STATE COMMUNICATIONS

Zeeman effect in the excitation spectra of acceptors in Ge studied by photothermal ionization spectroscopy

Paul ClauwsJan Broeckx

A2 Journal Article in IZVESTIYA AKADEMII NAUK SSSR

1975

Optical absorption of defects in V2O5 single crystals : V2O5 doped with Ti, Mo and Cu

Paul ClauwsJoost Vennik

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

1974

Optical absorption of defects in V2O5 single crystals : as-grown and reduced V2O5

Paul ClauwsJoost Vennik

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

1973

Thermal and low energy electron bombardment induced oxygen loss of V2O5 single crystals : transition into V6O13

M.N. ColpaertPaul ClauwsLucien FiermansJoost Vennik

A1 Journal Article in SURFACE SCIENCE

Spectroscopische identificatie en studie van de fysische eigenschappen van thermische donors in zuurstofrijk germanium. Proefschrift Aggregatie Hoger Onderwijs, R.U.G., Gent, 1991, (317 p.).