Research Explorer

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Researcher

Lieve Goubert

Awards & Distinctions

6 Results

2001

Studie van de invloed van technologisch belangrijke productieprocesstappen op de elektrische eigenschappen van p-InP en n-InxGa1-xAs met behulp van schottkybarrières

Lieve GoubertFelix CardonRoland Vanmeirhaeghe

1999

A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments.

Greet VanalmeLieve GoubertRoland VanmeirhaegheFelix CardonPeter Van Daele

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1998

A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers.

Roland VanmeirhaegheGreet VanalmeLieve GoubertFelix CardonPeter Van Daele

1997

A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.

Roland VanmeirhaegheGM VANALMELieve GoubertFelix CardonPeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS

A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.

Lieve GoubertRoland VanmeirhaeghePaul ClauwsFelix CardonPeter Van Daele

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1995

An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.

Roland VanmeirhaegheLieve GoubertLucien FiermansWilly LaflereFelix CardonPeter De DobbelaerePeter Van Daele

A1 Journal Article in MICROSCOPY OF SEMICONDUCTING MATERIALS