Research Explorer

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Researcher

Koen Vanhollebeke

Awards & Distinctions

15 Results

2001

MOVPE based Zn diffusion into InP and InAsP/InP hetero structures.

Koen VanhollebekeMark D'HondtIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices

Koen VanhollebekeJ NicaIngrid MoermanPeter Van Daele

Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).

Koen VanhollebekeMark D'HondtIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

2000

Compliant substrate technology: Integration of mismatched materials for opto-electronic applications.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS

Development of compliant substrates for the realization of advanced opto-electronic devices

Koen VanhollebekeIngrid Moerman

Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

A1 Journal Article in JOURNAL OF ELECTRONIC MATERIALS

MOVPE based Zn diffusion into InP and InAsP/InGaAs heterostructures.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

1999

(Al)GaInP multiquantum well LEDs on Ge and GaAs.

Prasanta ModakMark D'HondtIngrid MoermanPeter Van DaelePiet DemeesterKoen VanhollebekeP MIJLEMANS

Growth of InGaAs lattice-mismatched layers on GaAs and InP compliant substratesPresented at the Ninth Biennial Workshop on Organometallic Vapor Phase Epitaxy, 23-27 May 1999, Ponte Vedra Beach, Florida, USA, pp. 11.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

InGaAs layers grown by OMVPE on compliant substrates for extended wavelength detectors.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

InGaAs layers grown by OMVPE on compliant substrates for extended wavelength detectors.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

Lattice-mismatched InGaAs layers grown by MOVPE on GaAs and InP compliant substrates.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

Lattice-mismatched InGaAs layers grown on GaAs and InP compliant substrates.

Koen VanhollebekeIngrid MoermanPeter Van DaelePiet Demeester

A2 Journal Article in Presented at the 41st Electronic Materials Conference (EMC 99), Published in Journal of Electronic Materials (Vol. 28, Nr. 7, July 1999), 30 June - 2 July 1999, Santa Barbara, California, USA

1998

Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.

Koen VanhollebekeL CONSIDINEIngrid MoermanPiet DemeesterEJ THRUSHJA CRAWLEY

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH