Research Explorer

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Researcher

Koen Jacobs

Awards & Distinctions

37 Results

2004

Formation of metallic In in InGaN/GaN multiquantum wells

B VAN DAELEG VAN TENDELOOKoen JacobsIngrid MoermanMR LEYS

A1 Journal Article in APPLIED PHYSICS LETTERS

2002

Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.

Wei ChenPJ MCNALLYKoen JacobsT TUOMIAN DANILEWSKYZR ZYTKIEWICZD LOWNEYJ KANATHARANAL KNUUTTILAJ RIIKONEN

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

2001

Chemical mapping of InGaN MQWs.

N SHARMAD TRICKERPaul ThomasZahia BougriouaKoen JacobsJ CHEYNSIngrid MoermanT THRUSHL CONSIDINEA BOYD et al.

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography.

PJ MCNALLYT TUOMID LOWNEYKoen JacobsAN DANILEWSKYR RANTAMAKIM O'HAREL CONSIDINE

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Investigation on p-contacts in Mg-doped GaN and the effect of various pre-treatments.

F KAROUTAR RUSCASSIEMCJCM KRAMERB JACOBSKoen JacobsIngrid Moerman

Material optimisation for AlGaN/GaN HFET applications.

Zahia BougriouaIngrid MoermanN SHARMARH WALLISJan CheynsKoen JacobsEJ THRUSHL CONSIDINER BEANLANDJL FARVACQUE et al.

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Suppression of rare-earth implantation-induced damage in GaN

A VantommeSM HoggMF WuB PipeleersM SwartS GoodmanD AuretK IakoubovskiiGJ AdriaenssensKoen Jacobs et al.

A1 Journal Article in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

The dependence of the optical energies on InGaN composition.

KP O'DONNELLRW MARTINC TRAGER-COWANME WHITEK ESONAC DEATCHERPG MIDDLETONKoen JacobsWim Van Der StrichtC MERLET et al.

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

White beam synchroton x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN.

Wei ChenPJ MCNALLYKoen JacobsT TUOMIAN DANILEWSKYD LOWNEYJ KANATHARANA

2000

Chemical mapping of V-defects in InGaN MQWs.

N SHARMADM TRICKERPJ THOMASCJ HUMPHREYSZahia BougriouaKoen JacobsJan CheynsIngrid Moerman

Elastic strain in InGaN and AlGaN layers

MF WuSD YaoA VantommeS HoggG LangoucheWim Van Der StrichtKoen JacobsIngrid MoermanJ LiGY Zhang

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.

A STAFFORDS IRVINEZahia BougriouaKoen JacobsIngrid MoermanEJ THRUSHL CONSIDINE

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.

A STAFFORDS IRVINEZahia BougriouaKoen JacobsIngrid MoermanEJ THRUSHL CONSIDINE

Some considerations on the growth of highly resistive GaN layers.

Zahia BougriouaKoen JacobsJan CheynsIngrid Moerman

1999

Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer.

C TRAGER-COWANI OSBORNEM BARISONZISK MANSON-SMITHKP O'DONNELLKoen JacobsIngrid MoermanPiet Demeester

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Characterisation of epitaxial laterally overgrown gallium nitride using transmission electron microscopy.

DM TRICKERKoen JacobsCJ HUMPHREYS

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.

N DUXBURYP DAWSONU BANGERTEJ THRUSHWim Van Der StrichtKoen JacobsIngrid Moerman

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.

MF WUA VANTOMMESM HOGGG LANGOUCHEWim Van Der StrichtKoen JacobsIngrid Moerman

A1 Journal Article in APPLIED PHYSICS LETTERS

GaN pendeo-epitaxy.

Koen JacobsJan CheynsIngrid MoermanPiet DemeesterEJ THRUSH

Intrinsic infrared luminescence from InGaN epilayers.

KP O'DONNELLRW MARTINS PEREIRAA BANGURAME WHITEWim Van Der StrichtKoen Jacobs

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Intrinsic infrared luminescence from InGaN layers.

KP O'DONNELLRW MARTINS PEREIRAA BANGURAME WHITEWim Van Der StrichtKoen Jacobs

Lateral epitaxial overgrowth for GaN-based LEDs

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterEJ THRUSH

OMVPE-based epitaxial lateral overgrowth for GaN LEDs.

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterJ DE NAEYERSteven VerstuyftPeter Van Daele

Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.

KP O'DONNELLME WHITES PEREIRAMF WUA VANTOMMEWim Van Der StrichtKoen Jacobs

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC RESEARCH

Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.

KP O'DONNELLME WHITES PEREIRAMF WUA VANTOMMEWim Van Der StrichtKoen Jacobs

Probing nitride thin films in 3-dimensions using a variable energy electron beam

C Trager-CowanJF TreguerS GrimsonI OsborneM BarisonziPG MiddletonSK Manson-SmithA MohammedKP O'DonnellWim Van Der Stricht et al.

Side-wall morphology in reactive ion etching of GaN.

F KAROUTAB JACOBSKoen JacobsIngrid Moerman

Violet-blue InGaN/GaN MQW light emitting diodes on epitaxially laterally overgrown GaN.

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterSteven VerstuyftJ DE NAEYERPeter Van Daele

1998

Epitaxial lateral overgrowth of GaN by OMVPE.

Koen JacobsWim Van Der StrichtIngrid MoermanPiet DemeesterSteven VerstuyftK CAEKEBEKEPeter Van DaeleL CONSIDINEEJ THRUSH

High indium content InGaN films and quantum wells.

W VAN DER STRICHTKoen JacobsIngrid MoermanPiet DemeesterL CONSIDINEEJ THRUSHJ CRAWLEYP RUTERANA

InGaN/GaN MQW blue light emitting diodes grown by OMVPE.

Wim Van Der StrichtKoen JacobsK CAEKEBEKESteven VerstuyftIngrid MoermanPeter Van DaelePiet DemeesterL CONSIDINEEJ TRUSH

InP-based modulator array antennas at 1.06 µm

Johan HendrixGiovanni FlamandKoen JacobsIngrid MoermanBart DhoedtRoel BaetsPiet DemeesterPeter Van Daele

1997

High Indium content InGaN films and quantum wells

Wim Van Der StrichtKoen JacobsIngrid MoermanPiet DemeesterL CONSIDINEEJ THRUSHJA CRAWLEYP RUTERANA

High efficiency InGaAsP/InP phase modulator at 1.06 mm.

Giovanni FlamandJohan HendrixKoen JacobsIngrid MoermanBart DhoedtRoel BaetsPiet DemeesterPeter Van Daele

Accelerated aging of InGaN/GaN LED by electrical stressing

Koen JacobsJan CheynsWim Van Der StrichtIngrid MoermanI HARRISON

Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

C TRAGER-COWANA MOHAMMEDSK MANSON-SMITHKP O'DONNELLKoen JacobsIngrid Moerman

Effects of carrier gas type on the properties of InGaN/GaN quantum well structures grown by MOCVD

N DUXBURYP DAWSONU BANGERTEJ THRUSHWim Van Der StrichtKoen JacobsIngrid Moerman