Research Explorer

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Researcher

Jan Vanhellemont

Awards & Distinctions

154 Results

2017

High-throughput screening of extrinsic point defect properties in Si and Ge : database and applications

Michael SluydtsMichael PietersJan VanhellemontVeronique Van SpeybroeckStefaan Cottenier

A1 Journal Article in CHEMISTRY OF MATERIALS

2016

Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices

E GaubasEddy SimoenJan Vanhellemont

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon

K LauerC MöllerD SchulzeC AhrensJan Vanhellemont

Microdefects modeling in germanium single crystals

Piotr ŚpiewakJan VanhellemontKrzysztof J Kurzydłowski

Bookchapter in Materials for energy infrastructure

The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations

Eiji KamiyamaRyo MatsutaniRyo SuwaJan VanhellemontKoji Sueoka

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

2015

A statistical model describing temperature dependent gettering of Cu in p-type Si

Eiji KamiyamaKoji SueokaJan Vanhellemont

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Effect of dopant compensation on the behavior of dissolved iron and iron-boron related complexes in silicon

Xiaodong ZhuXuegong YuPeng ChenYong LiuJan VanhellemontDeren Yang

A1 Journal Article in INTERNATIONAL JOURNAL OF PHOTOENERGY

Estimation of the temperature dependent interaction between uncharged point defects in Si

Eiji KamiyamaJan VanhellemontKoji Sueoka

A1 Journal Article in AIP ADVANCES

Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM

Jan VanhellemontS AnadaT NagaseH YasudaA SchulzeH BenderR RooyackersA Vandooren

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Jan VanhellemontS AnadaT NagaseH YasudaH BenderR RooyackersA Vandooren

In situ UHVEM study of {113}-defect formation in Si nanowires

Jan VanhellemontSatoshi AnadaHidehiro YasudaPatricia Van MarckeHugo BenderRita RooyackersAnne Vandooren

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

In situ UHVEM study of {113}-defect formation in Si nanowires

Jan VanhellemontSatoshi AnadaHidehiro YasudaHugo BenderRita RooyackersAnne Vandooren

Intrinsic point defect behavior close to silicon melt/solid interface

Jan VanhellemontEiji KamiyamaKozo NakamuraKoji Sueoka

SiOx precipitate composition in Si, revisited : discussion closed?

Jan Vanhellemont

A1 Journal Article in PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals

K SueokaK NakamuraJan Vanhellemont

Vacancies in Si and Ge

Eiji KamiyamaKoji SueokaJan Vanhellemont

Bookchapter in Silicon, germanium, and their alloys : growth, defects, impurities, and nanocrystals

2014

An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si

Eiji KamiyamaKoji SueokaJan Vanhellemont

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Comment on 'Experimental study of the impact of stress on the point defect incorporation during silicon growth' [ECS Solid State Lett., 3, N5 (2014)]

Jan VanhellemontEiji KamiyamaKoji Sueoka

Editorial material

Control of intrinsic point defects in single crystal silicon and germanium growth from a melt

Jan VanhellemontE KamiyamaK NakamuraK Sueoka

Deep-level transient spectroscopy study of quenched-in defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique

Akhilesh K SwarnakarOmer Van der BiestJan Vanhellemont

Determination of the single crystal Ge Young’s modulus between room temperature and melting temperature using the impulse excitation technique

Akhilesh K SwarnakarOmer Van der BiestJan Van HumbeeckJan Vanhellemont

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt

Eiji KamiyamaKoji SueokaJan Vanhellemont

Formation of shallow n-p junctions in Cz-Si by low-energy implantation of carbon ions

B RomanyukV MelnikV PopovV LitovchenkoV BabichV IlchenkoV KladkoJan Vanhellemont

Impact of plane thermal stress near the melt/solid interface on the v/G criterion for defect-free large diameter single crystal Si growth

Koji SueokaEiji KamiyamaJan VanhellemontKozo Nakamura

A1 Journal Article in ECS SOLID STATE LETTERS

Mn related defect levels in germanium

Johan LauwaertFilip MoensSiegfried SegersKarl OpsomerEddy SimoenJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

Oxygen gettering in low-energy arsenic ion implanted Cz-silicon

O OberemokV KladkoV LitovchenkoB RomanyukV PopovV MelnikJan Vanhellemont

Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon

O OberemokV KladkoV LitovchenkoB RomanyukV PopovV MelnikJan Vanhellemont

Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

X ZhangX MaC GaoT XuJ ZhaoP DongJan Vanhellemont

Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

O OberemokV KladkoV LitovchenkoB RomanyukV PopovV MelnikA SarikovO GudymenkoJan Vanhellemont

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Koji SueokaEiji KamiyamaJan Vanhellemont

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Koji SueokaEiji KamiyamaJan VanhellemontKozo Nakamura

A1 Journal Article in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Stress and doping impact on intrinsic point defects in silicon and germanium

Jan VanhellemontEiji KamiyamaKoji Sueoka

Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials

Eiji KamiyamaKoji SueokaJan Vanhellemont

Temperature dependent Young's modulus of Si and Ge

Jan VanhellemontAkhilesh Kumar SwarnakarOmer Van der Biest

Temperature dependent internal friction behavior of single crystal germanium studied by the impulse excitation technique

Akhilesh Kumar SwarnakarOmer Van der BiestJan Van HumbeeckJan Vanhellemont

Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

Koji SueokaEiji KamiyamaJan Vanhellemont

Ultra high voltage electron microscopy study of {113}-defect generation in Si nanowires

Jan VanhellemontS AnadaT NagaseH YasudaH BenderR RooyackersA Vandooren

2013

Assignment of anomalous DLTS signals to additional barriers in Cu(In,Ga)Se2 solar cells

Johan LauwaertLisanne Van PuyveldeJan VanhellemontHenk Vrielinck

Doppler broadening spectroscopy of positron annihilation near Ge and Si (001) single crystal surfaces

Eiji KamiyamaKoji SueokaKoji IzunomeKazuhiko KashimaOsamu NakatsukaNoriyuki TaokaShigeaki ZaimaJan Vanhellemont

A1 Journal Article in ECS SOLID STATE LETTERS

Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth

Eiji KamiyamaKoji SueokaJan Vanhellemont

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon

Xinpeng ZhangChao GaoMaosen FuXiangyang MaJan VanhellemontDeren Yang

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Iron-boron pair dissociation in silicon under strong illumination

Xiaodong ZhuDeren YangXuegong YuJian HeYichao WuJan VanhellemontDuanlin Que

A1 Journal Article in AIP ADVANCES

On the resistivity increase of heavily doped n-type Si by rapid thermal processing

Xinpeng ZhangXiangyang MaChao GaoTao XuJian ZhaoPeng DongDeren YangJan Vanhellemont

Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si

Xinpeng ZhangMaosen FuXiangyang MaDeren YangJan Vanhellemont

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers

Xinpeng ZhangXiangyang MaDeren YangJan Vanhellemont

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Silicon single crystal growth from a melt: on the impact of dopants on the v/G criterion

Jan VanhellemontEiji KamiyamaKoji Sueoka

A1 Journal Article in ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY

Surface-induced charge at a Ge (100) dimer surface and its interaction with vacancies and self-interstitials

Eiji KamiyamaKoji SueokaJan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Temperature independent slow hole emission from transition metal centers in germanium

Siegfried SegersJohan LauwaertPaul ClauwsFreddy CallensJan VanhellemontEddy SimoenHenk Vrielinck

Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

A1 Journal Article in JOURNAL OF PHYSICS D-APPLIED PHYSICS

The ν/G criterion for defect-free silicon single crystal growth from a melt revisited: implication for large diameter crystals

Jan Vanhellemont

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

Koji SueokaEiji KamiyamaJan Vanhellemont

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

E KamiyamaJan VanhellemontK SueokaK ArakiK Izunome

A1 Journal Article in APPLIED PHYSICS LETTERS

Tunnel emission from Co and Cr-related levels in p-type Ge

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenJan VanhellemontFreddy CallensHenk Vrielinck

2012

2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

Jan VanhellemontH YasudaY TokumotoY OhnoM SuezawaI Yonenaga

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A density functional theory study of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing Si single crystals

Koji SueokaEiji KamiyamaHiroaki KariyazakiJan Vanhellemont

A temperature independent emission component in the capacitance transients of deep-level defects in germanium

Siegfried SegersJohan LauwaertPaul ClauwsEddy SimoenFreddy CallensJan VanhellemontHenk Vrielinck

Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: implications for intrinsic point defect incorporation during crystal growth from a melt

Eiji KamiyamaKoji SueokaJan Vanhellemont

Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: implications for intrinsic point defect incorporation during crystal growth from a melt

Eiji KamiyamaKoji SueokaJan Vanhellemont

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces

Eiji KamiyamaKoji SueokaJan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si

Koji SueokaEiji KamiyamaHiroaki KariyazakiJan Vanhellemont

Diode characteristics and thermal donor formation in germanium-doped silicon substrates

Joan Marc RafiJan VanhellemontEddy SimoenJiahe ChenMiguel ZabalaDeren Yang

Electronic properties of iron and cobalt impurity centres in germanium

Johan LauwaertJan VanhellemontE SimoenHenk VrielinckPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

MeV electron irradiation in-situ HVEM studies on the impact of doping on {113}-defect formation in silicon

Jan Vanhellemont

On the diffusion and activation of n-type dopants in Ge

Jan VanhellemontEddy Simoen

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

On the impact of stress on intrinsic defect formation during single crystal silicon growth

Jan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

On the role of thermal gradient related stress and impurities in intrinsic defect formation during single crystal silicon growth from the melt

Jan VanhellemontEiji KamiyamaKoji Sueoka

On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the melt

Jan Vanhellemont

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Response to 'Comment on 'Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited'' [J. Appl. Phys. 111, 116102 (2012)]

Jan Vanhellemont

Editorial material

Si crystal growth from a melt: the secrets behind the v/G criterion

Jan VanhellemontEiji KamiyamaKoji Sueoka

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

E GaubasA UleckasJM RafiJ ChenD YangJan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Study of radiation defect characteristics in Ge doped Si structures

A UleckasE GaubasLF MakarenkoJan Vanhellemont

2011

Analysis of Auger recombination characteristics in high resistivity Si and Ge

A UleckasE GaubasT CeponisK ZilinskasR GrigonisV SirutkaitisJan Vanhellemont

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

A UleckasE GaubasJM RafiJ ChenD YangH OhyamaE SimoenJan Vanhellemont

DLTS and FTIR study of quenching induced defects in germanium

Siegfried SegersJohan LauwaertHenk VrielinckPaul ClauwsFreddy CallensEddy SimoenJan Vanhellemont

Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

Jiahe ChenJan VanhellemontEddy SimoenJohan LauwaertHenk VrielinckJoan Marc RafiHidenori OhyamaJörg WeberDeren Yang

Field-enhanced electron capture by iron impurities in germanium

Johan LauwaertSiegfried SegersEddy SimoenDiederik DeplaJan VanhellemontPaul ClauwsFreddy CallensHenk Vrielinck

Germanium doping for improved silicon substrates and devices

Jan VanhellemontJiahe ChenJohan LauwaertHenk VrielinckW XuDeren YangJM RafiHidenori OhyamaEddy Simoen

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks

Jiahe ChenE CornagliottiX LoozenE SimoenJan VanhellemontJohan LauwaertHenk VrielinckJ Poortmans

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional

P ŚpiewakJan VanhellemontKJ Kurzydłowski

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited

Jan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

On the impact of heavy doping on grown-in defects in Czochralski-grown silicon

Xinpeng ZhangW XuJ ChenXiangyang MaDeren YangL GongD TianJan Vanhellemont

Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method

Masashi SuezawaNaoki FukataJan VanhellemontIchiro Yonenaga

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere

Masashi SuezawaN FukataIchiro SuezawaJan Vanhellemont

2010

Germanium doping of Si substrates for improved device characteristics and yield

Jan VanhellemontJiahe ChenWubing XuDeren YangJoan Marc RafiHidenori OhyamaEddy Simoen

Intrinsic point defect clustering during Czochralski growth of (silicon and) germanium

Jan VanhellemontPiotr Śpiewak

On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Jan VanhellemontXinPeng ZhangWuBing XuJiaHe ChenXiangYang MaDeRen Yang

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

Jan VanhellemontMasashi SuezawaIchiro Yonenaga

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

2009

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

H OhyamaJM RafiF CampabadalK TakakuraE SimoenJ ChenJan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Electronic properties of titanium and chromium impurity centers in germanium

Johan LauwaertJochen Van GheluweJan VanhellemontEddy SimoenPaul Clauws

A1 Journal Article in Journal of Applied Physics

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

K TakakuraD KogaH OhyamaJM RafiY KayamotoM ShibuyaH YamamotoJan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Jan VanhellemontJohan LauwaertA WiteckaP SpiewakI RomandicPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

JM RafiJan VanhellemontE SimoenJ ChenM ZabalaF Campabadal

A1 Journal Article in PHYSICA B-CONDENSED MATTER

On intrinsic point defect cluster formation during Czochralski crystal growth

Jan VanhellemontPiotr SpiewakKoji SueokaIgor Romandic

On the diffusion and activation of ion-implanted n-type dopants in germanium

Eddy SimoenJan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium

E GaubasA UleckasJan Vanhellemont

A1 Journal Article in SUPERLATTICES AND MICROSTRUCTURES

2008

A Comparison of Intrinsic Point Defect Properties in Si and Ge

Jan VanhellemontP SPIEWAKK SUEOKAE SIMOENI ROMANDIC

Ab-initio simulation of formation and diffusion energies of intrinsic point defects in Ge

Piotr SpiewakJan VanhellemontKoji SueokaKrzysztof J KurzydlowskiIgor Romandic

Ab-initio simulation of formation and diffusion energies of intrinsic point defects in Ge

Piotr SpiewakKrzysztof KurzydlowskiKoji SueokaJan VanhellemontIgor Romandic

Ab-initio simulation of self-interstitial in germanium

P ŚpiewakJan VanhellemontK SueokaKJ KurzydłowskiI Romandic

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

E-MRS 2008 Spring Conference Symposium J: Beyond silicon technology: materials and devices for post-Si CMOS: preface

Cor ClaeysTony PeakerJean FompeyrineMartin FrankJan Vanhellemont

Editorial material

First principles calculations of the formation energy and deep levels associated with the neutral and charged vacancy in germanium

P SPIEWAKJan VanhellemontK SUEOKAKJ KURZYDLOWSKII ROMANDIC

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

First principles calculations of the formation energy of the neutral

P SPIEWAKKJ KURZYDLOWSKIK SUEOKAI ROMANDJan Vanhellemont

Intrinsic point defect properties and engineering in silicon and germanium Czochralski crystal growth

Jan VanhellemontPiotr SpiewakKoji SueokaIgor RomandicEddy Simoen

Metal implants-dependent carrier recombination characteristics in Ge

E GaubasA UleckasJan VanhellemontW Geens

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Microwave and infra red light absorption studies of carrier lifetime in silicon and germanium

E GAUBASJan Vanhellemont

Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge

E GAUBASA ULECKASR GRIGONISV SIRUTKAITISJan Vanhellemont

A1 Journal Article in APPLIED PHYSICS LETTERS

On the characterisation of grown-in defects in Czochralski-grown Si and Ge

Jan VanhellemontJ VAN STEENBERGENF HOLSTEYNSP ROUSSELM MEURISK MLYNARCZYKP SPIEWAKW GEENSI ROMANDIC

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques

E. GaubasA. UleckasR. GrigonisV. SirutkaitisJan Vanhellemont

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

Vacancy dynamics in growing Czochralski germanium crystals

Piotr SpiewakKrzysztof KurzydlowskiJan VanhellemontIgor Romandic

2007

Ab initio analysis of point defects in plane-stressed Si or Ge crystal

Koji SueokaPiotr SpiewakJan Vanhellemont

Ab initio analysis of point defects in plane-stressed Si or Ge crystals

Koji SueokaPiotr SpiewakJan Vanhellemont

Ab initio calculation of the formation energy of charged vacancies in germanium

P SPIEWAKK SUEOKAJan VanhellemontKJ KURZYDLOWSKIK MLYNARCZYKP WABINSKII ROMANDIC

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Brother silicon, sister germanium

Jan VanhellemontE Simoen

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

E GAUBASJan VanhellemontE SIMOENI ROMANDICW GEENSPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium

E GAUBASJan Vanhellemont

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Deep level transient spectroscopy of transition metal impurities in germanium

Paul ClauwsJochen Van GheluweJohan LauwaertE SIMOENJan VanhellemontM MEURISAntoon Theuwis

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Defect analysis in semiconductor materials based on p-n junction diode characteristics

Eddy SimoenCor ClaeysJan Vanhellemont

Bookchapter in Defects and diffusion semiconductors : an annual retrospective IX

Grown-in defects in germanium

Jan VanhellemontEddy SimoenIgor RomandicAntoon Theuwis

Bookchapter in Germanium-based technologies : from materials to devices

Lifetime and leakage current considerations in metal-doped germanium

E SIMOENC CLAEYSS SIONCKEJ VAN STEENBERGENM MEURISStefaan FormentJan VanhellemontPaul ClauwsAntoon Theuwis

A1 Journal Article in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Molecular dynamics simulation of intrinsic point defects in germanium

P SPIEWAKM MUZYKKJ KURZYDLOWSKIJan VanhellemontK MLYNARCZYKP WABINSKII ROMANDIC

A1 Journal Article in JOURNAL OF CRYSTAL GROWTH

On the impact of metal impurities on the carrier lifetime in n-type germanium

E GAUBASJan VanhellemontE SIMOENPaul ClauwsAntoon Theuwis

On the solubility and diffusivity of the intrinsic point defects in germanium

Jan VanhellemontP SPIEWAKK SUEOKA

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Recombination peculiarities in doped Ge

E GAUBASA ULECKASJan VanhellemontAntoon Theuwis

A1 Journal Article in LITHUANIAN JOURNAL OF PHYSICS

Simulation of vacancy cluster formation and binding energies in single crystal germanium

P SPIEWAKKJ KURZYDLOWSKIJan VanhellemontP WABINSKIK MLYNARCZYKI ROMANDIC

2006

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon

Jan VanhellemontOlivier DE GRYSEPaul Clauws

A1 Journal Article in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A deep-level transient spectroscopy study of transition metals in n-type germanium

Stefaan FormentJan VanhellemontPaul ClauwsJ VAN STEENBERGENS SIONCKEM MEURISE SIMOENAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

K SUEOKAJan Vanhellemont

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Brother silicon, sister germanium

Jan VanhellemontEddy Simoen

Brother silicon, sister germanium

Jan VanhellemontEddy R Simoen

Carrier lifetime studies in Ge using microwave and infrared light techniques

E GAUBASM BAUZAA ULECKASJan Vanhellemont

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Comparative study of carrier lifetime variation with doping in Si and Ge

Eugenijus GaubasJan Vanhellemont

Comparative study of carrier lifetime variations with doping in Si and Ge

Eugenijus GaubasJan Vanhellemont

Dependence of carrier lifetime in germanium on resisitivity and carrier injection level

E GAUBASJan Vanhellemont

A1 Journal Article in APPLIED PHYSICS LETTERS

Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

Olivier De GryseJan VanhellemontPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Infrared analysis of the precipitated oxide phase in silicon and germanium

O DE GRYSEPiet VanmeerbeekJan VanhellemontPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth

P SPIEWAKKJ KURZYDLOWSKIJan VanhellemontPaul ClauwsP WABINSKIK MLYNARCZYKI ROMANDICAntoon Theuwis

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Simulation of point defect diffusion in germanium

Johan LauwaertS HENSP SPIEWAKD WAUTERSDirk PoelmanI ROMANDICPaul ClauwsJan Vanhellemont

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2005

Critical precipitate size revisited and implications for oxygen precipitation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals

S HENSJan VanhellemontDirk PoelmanPaul ClauwsI ROMANDICAntoon TheuwisF HOLSTEYNSJ VAN STEENBERGEN

A1 Journal Article in APPLIED PHYSICS LETTERS

Precipitation and extended defect formation in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon

Jan VanhellemontS HENSJohan LauwaertO DE GRYSEPiet VanmeerbeekDirk PoelmanP SPIEWAKI ROMANDICAntoon TheuwisPaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI

2004

Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy

Olivier DE GRYSEPaul ClauwsJan VanhellemontOI LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Extended defects in silicon: an old and new story

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

Grown-in lattice defects and diffusion in Czochralski-grown germanium

Jan VanhellemontO DE GRYSES HENSPiet VanmeerbeekDirk PoelmanPaul ClauwsE SIMOENC CLAEYSI ROMANDICAntoon Theuwis et al.

A1 Journal Article in DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII -

2003

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Jan VanhellemontOlivier De GrysePaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

Olivier De GryseJan VanhellemontPaul ClauwsO LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation

H. OhyamaK. KobayashiJan VanhellemontE. SimoenC. ClaeysK. TakakuraT. HiraoS. Onoda

A1 Journal Article in PHYSICA B-CONDENSED MATTER

2002

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Olivier De GrysePaul ClauwsJan VanhellemontO LEBEDEVJ VAN LANDUYTE SIMOENC CLAEYS

On the nucleation of bulk stacking faults in CZ silicon

Jan VanhellemontOlivier De GrysePaul Clauws

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.

O De GrysePaul ClauwsJ Van LanduytO LebedevC ClaeysE SimoenJan Vanhellemont

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

1998

Accurate infrared absorption measurement of interstitial and precipitated oxygen in heavily doped silicon

Olivier De GrysePaul ClauwsL ROSSOUJ VAN LANDUYTJan VanhellemontWilly Mondelaers

1997

Study of point defects in silicon by means of positron annihilation with core electrons

J KuriplachToon Van HoeckeB Van WaeyenbergeCharles DauweDanny SegersN BalcaenAL MoralesMA TrauwaertJan VanhellemontM Sob

A1 Journal Article in Materials Science Forum