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Researcher
Jan Vanhellemont
Profile
Projects
Publications
Activities
Awards & Distinctions
154
Results
2017
High-throughput screening of extrinsic point defect properties in Si and Ge : database and applications
Michael Sluydts
Michael Pieters
Jan Vanhellemont
Veronique Van Speybroeck
Stefaan Cottenier
A1
Journal Article
in
CHEMISTRY OF MATERIALS
2017
2016
Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
E Gaubas
Eddy Simoen
Jan Vanhellemont
A1
Journal Article
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2016
Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon
K Lauer
C Möller
D Schulze
C Ahrens
Jan Vanhellemont
C1
Conference
2016
Microdefects modeling in germanium single crystals
Piotr Śpiewak
Jan Vanhellemont
Krzysztof J Kurzydłowski
Bookchapter
in
Materials for energy infrastructure
2016
The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
Eiji Kamiyama
Ryo Matsutani
Ryo Suwa
Jan Vanhellemont
Koji Sueoka
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2016
2015
A statistical model describing temperature dependent gettering of Cu in p-type Si
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
A1
Journal Article
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2015
Effect of dopant compensation on the behavior of dissolved iron and iron-boron related complexes in silicon
Xiaodong Zhu
Xuegong Yu
Peng Chen
Yong Liu
Jan Vanhellemont
Deren Yang
A1
Journal Article
in
INTERNATIONAL JOURNAL OF PHOTOENERGY
2015
Estimation of the temperature dependent interaction between uncharged point defects in Si
Eiji Kamiyama
Jan Vanhellemont
Koji Sueoka
A1
Journal Article
in
AIP ADVANCES
2015
Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM
Jan Vanhellemont
S Anada
T Nagase
H Yasuda
A Schulze
H Bender
R Rooyackers
A Vandooren
P1
Conference
2015
In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures
Jan Vanhellemont
S Anada
T Nagase
H Yasuda
H Bender
R Rooyackers
A Vandooren
P1
Conference
2015
In situ UHVEM study of {113}-defect formation in Si nanowires
Jan Vanhellemont
Satoshi Anada
Hidehiro Yasuda
Patricia Van Marcke
Hugo Bender
Rita Rooyackers
Anne Vandooren
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2015
In situ UHVEM study of {113}-defect formation in Si nanowires
Jan Vanhellemont
Satoshi Anada
Hidehiro Yasuda
Hugo Bender
Rita Rooyackers
Anne Vandooren
C3
Conference
2015
Intrinsic point defect behavior close to silicon melt/solid interface
Jan Vanhellemont
Eiji Kamiyama
Kozo Nakamura
Koji Sueoka
C1
Conference
2015
SiOx precipitate composition in Si, revisited : discussion closed?
Jan Vanhellemont
A1
Journal Article
in
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
2015
Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals
K Sueoka
K Nakamura
Jan Vanhellemont
C3
Conference
2015
Vacancies in Si and Ge
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
Bookchapter
in
Silicon, germanium, and their alloys : growth, defects, impurities, and nanocrystals
2015
2014
An atomistic picture of the diffusion of two vacancies forming a di-vacancy in Si
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
A1
Journal Article
in
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
2014
Comment on 'Experimental study of the impact of stress on the point defect incorporation during silicon growth' [ECS Solid State Lett., 3, N5 (2014)]
Jan Vanhellemont
Eiji Kamiyama
Koji Sueoka
Editorial material
2014
Control of intrinsic point defects in single crystal silicon and germanium growth from a melt
Jan Vanhellemont
E Kamiyama
K Nakamura
K Sueoka
C1
Conference
2014
Deep-level transient spectroscopy study of quenched-in defects in germanium
Siegfried Segers
Johan Lauwaert
Paul Clauws
Freddy Callens
Jan Vanhellemont
Eddy Simoen
Henk Vrielinck
C3
Conference
2014
Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique
Akhilesh K Swarnakar
Omer Van der Biest
Jan Vanhellemont
P1
Conference
2014
Determination of the single crystal Ge Young’s modulus between room temperature and melting temperature using the impulse excitation technique
Akhilesh K Swarnakar
Omer Van der Biest
Jan Van Humbeeck
Jan Vanhellemont
P1
Conference
2014
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge
Siegfried Segers
Johan Lauwaert
Paul Clauws
Eddy Simoen
Jan Vanhellemont
Freddy Callens
Henk Vrielinck
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2014
Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
P1
Conference
2014
Formation of shallow n-p junctions in Cz-Si by low-energy implantation of carbon ions
B Romanyuk
V Melnik
V Popov
V Litovchenko
V Babich
V Ilchenko
V Kladko
Jan Vanhellemont
C1
Conference
2014
Impact of plane thermal stress near the melt/solid interface on the v/G criterion for defect-free large diameter single crystal Si growth
Koji Sueoka
Eiji Kamiyama
Jan Vanhellemont
Kozo Nakamura
A1
Journal Article
in
ECS SOLID STATE LETTERS
2014
Mn related defect levels in germanium
Johan Lauwaert
Filip Moens
Siegfried Segers
Karl Opsomer
Eddy Simoen
Jan Vanhellemont
Paul Clauws
Freddy Callens
Henk Vrielinck
C3
Conference
2014
Oxygen gettering in low-energy arsenic ion implanted Cz-silicon
O Oberemok
V Kladko
V Litovchenko
B Romanyuk
V Popov
V Melnik
Jan Vanhellemont
C3
Conference
2014
Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon
O Oberemok
V Kladko
V Litovchenko
B Romanyuk
V Popov
V Melnik
Jan Vanhellemont
P1
Conference
2014
Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing
X Zhang
X Ma
C Gao
T Xu
J Zhao
P Dong
Jan Vanhellemont
P1
Conference
2014
Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon
O Oberemok
V Kladko
V Litovchenko
B Romanyuk
V Popov
V Melnik
A Sarikov
O Gudymenko
Jan Vanhellemont
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2014
Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon
Koji Sueoka
Eiji Kamiyama
Jan Vanhellemont
C3
Conference
2014
Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon
Koji Sueoka
Eiji Kamiyama
Jan Vanhellemont
Kozo Nakamura
A1
Journal Article
in
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
2014
Stress and doping impact on intrinsic point defects in silicon and germanium
Jan Vanhellemont
Eiji Kamiyama
Koji Sueoka
P1
Conference
2014
Surface-induced charge at the Ge (001) surface and its interaction with self-interstitials
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
P1
Conference
2014
Temperature dependent Young's modulus of Si and Ge
Jan Vanhellemont
Akhilesh Kumar Swarnakar
Omer Van der Biest
C1
Conference
2014
Temperature dependent internal friction behavior of single crystal germanium studied by the impulse excitation technique
Akhilesh Kumar Swarnakar
Omer Van der Biest
Jan Van Humbeeck
Jan Vanhellemont
P1
Conference
2014
Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
Koji Sueoka
Eiji Kamiyama
Jan Vanhellemont
P1
Conference
2014
Ultra high voltage electron microscopy study of {113}-defect generation in Si nanowires
Jan Vanhellemont
S Anada
T Nagase
H Yasuda
H Bender
R Rooyackers
A Vandooren
C1
Conference
2014
2013
Assignment of anomalous DLTS signals to additional barriers in Cu(In,Ga)Se2 solar cells
Johan Lauwaert
Lisanne Van Puyvelde
Jan Vanhellemont
Henk Vrielinck
C3
Conference
2013
Doppler broadening spectroscopy of positron annihilation near Ge and Si (001) single crystal surfaces
Eiji Kamiyama
Koji Sueoka
Koji Izunome
Kazuhiko Kashima
Osamu Nakatsuka
Noriyuki Taoka
Shigeaki Zaima
Jan Vanhellemont
A1
Journal Article
in
ECS SOLID STATE LETTERS
2013
Formation energy of intrinsic point defects in Si and Ge and implications for Ge crystal growth
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
A1
Journal Article
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2013
Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon
Xinpeng Zhang
Chao Gao
Maosen Fu
Xiangyang Ma
Jan Vanhellemont
Deren Yang
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2013
Iron-boron pair dissociation in silicon under strong illumination
Xiaodong Zhu
Deren Yang
Xuegong Yu
Jian He
Yichao Wu
Jan Vanhellemont
Duanlin Que
A1
Journal Article
in
AIP ADVANCES
2013
On the resistivity increase of heavily doped n-type Si by rapid thermal processing
Xinpeng Zhang
Xiangyang Ma
Chao Gao
Tao Xu
Jian Zhao
Peng Dong
Deren Yang
Jan Vanhellemont
P1
Conference
2013
Oxide precipitate nucleation at 300 °C in low resistivity n-type Czochralski Si
Xinpeng Zhang
Maosen Fu
Xiangyang Ma
Deren Yang
Jan Vanhellemont
A1
Journal Article
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2013
Scanning infrared microscopy study of thermal processing induced defects in low resistivity Si wafers
Xinpeng Zhang
Xiangyang Ma
Deren Yang
Jan Vanhellemont
A1
Journal Article
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
2013
Silicon single crystal growth from a melt: on the impact of dopants on the v/G criterion
Jan Vanhellemont
Eiji Kamiyama
Koji Sueoka
A1
Journal Article
in
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
2013
Surface-induced charge at a Ge (100) dimer surface and its interaction with vacancies and self-interstitials
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2013
Temperature independent slow hole emission from transition metal centers in germanium
Siegfried Segers
Johan Lauwaert
Paul Clauws
Freddy Callens
Jan Vanhellemont
Eddy Simoen
Henk Vrielinck
C3
Conference
2013
Temperature-independent slow carrier emission from deep-level defects in p-type germanium
Siegfried Segers
Johan Lauwaert
Paul Clauws
Eddy Simoen
Jan Vanhellemont
Freddy Callens
Henk Vrielinck
A1
Journal Article
in
JOURNAL OF PHYSICS D-APPLIED PHYSICS
2013
The ν/G criterion for defect-free silicon single crystal growth from a melt revisited: implication for large diameter crystals
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF CRYSTAL GROWTH
2013
Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
Koji Sueoka
Eiji Kamiyama
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF CRYSTAL GROWTH
2013
Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection
E Kamiyama
Jan Vanhellemont
K Sueoka
K Araki
K Izunome
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2013
Tunnel emission from Co and Cr-related levels in p-type Ge
Siegfried Segers
Johan Lauwaert
Paul Clauws
Eddy Simoen
Jan Vanhellemont
Freddy Callens
Henk Vrielinck
C3
Conference
2013
2012
2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si
Jan Vanhellemont
H Yasuda
Y Tokumoto
Y Ohno
M Suezawa
I Yonenaga
A1
Journal Article
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2012
A density functional theory study of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing Si single crystals
Koji Sueoka
Eiji Kamiyama
Hiroaki Kariyazaki
Jan Vanhellemont
P1
Conference
2012
A temperature independent emission component in the capacitance transients of deep-level defects in germanium
Siegfried Segers
Johan Lauwaert
Paul Clauws
Eddy Simoen
Freddy Callens
Jan Vanhellemont
Henk Vrielinck
C3
Conference
2012
Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: implications for intrinsic point defect incorporation during crystal growth from a melt
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
C1
Conference
2012
Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: implications for intrinsic point defect incorporation during crystal growth from a melt
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
A1
Journal Article
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2012
Ab initio study of vacancy and self-interstitial properties near single crystal silicon surfaces
Eiji Kamiyama
Koji Sueoka
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2012
DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si
Koji Sueoka
Eiji Kamiyama
Hiroaki Kariyazaki
Jan Vanhellemont
P1
Conference
2012
Diode characteristics and thermal donor formation in germanium-doped silicon substrates
Joan Marc Rafi
Jan Vanhellemont
Eddy Simoen
Jiahe Chen
Miguel Zabala
Deren Yang
P1
Conference
2012
Electronic properties of iron and cobalt impurity centres in germanium
Johan Lauwaert
Jan Vanhellemont
E Simoen
Henk Vrielinck
Paul Clauws
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2012
MeV electron irradiation in-situ HVEM studies on the impact of doping on {113}-defect formation in silicon
Jan Vanhellemont
Other
2012
On the diffusion and activation of n-type dopants in Ge
Jan Vanhellemont
Eddy Simoen
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2012
On the impact of stress on intrinsic defect formation during single crystal silicon growth
Jan Vanhellemont
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2012
On the role of thermal gradient related stress and impurities in intrinsic defect formation during single crystal silicon growth from the melt
Jan Vanhellemont
Eiji Kamiyama
Koji Sueoka
C1
Conference
2012
On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the melt
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF CRYSTAL GROWTH
2012
Response to 'Comment on 'Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited'' [J. Appl. Phys. 111, 116102 (2012)]
Jan Vanhellemont
Editorial material
2012
Si crystal growth from a melt: the secrets behind the v/G criterion
Jan Vanhellemont
Eiji Kamiyama
Koji Sueoka
P1
Conference
2012
Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes
E Gaubas
A Uleckas
JM Rafi
J Chen
D Yang
Jan Vanhellemont
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2012
Study of radiation defect characteristics in Ge doped Si structures
A Uleckas
E Gaubas
LF Makarenko
Jan Vanhellemont
P1
Conference
2012
2011
Analysis of Auger recombination characteristics in high resistivity Si and Ge
A Uleckas
E Gaubas
T Ceponis
K Zilinskas
R Grigonis
V Sirutkaitis
Jan Vanhellemont
P1
Conference
2011
Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
A Uleckas
E Gaubas
JM Rafi
J Chen
D Yang
H Ohyama
E Simoen
Jan Vanhellemont
P1
Conference
2011
DLTS and FTIR study of quenching induced defects in germanium
Siegfried Segers
Johan Lauwaert
Henk Vrielinck
Paul Clauws
Freddy Callens
Eddy Simoen
Jan Vanhellemont
C3
Conference
2011
Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes
Jiahe Chen
Jan Vanhellemont
Eddy Simoen
Johan Lauwaert
Henk Vrielinck
Joan Marc Rafi
Hidenori Ohyama
Jörg Weber
Deren Yang
P1
Conference
2011
Field-enhanced electron capture by iron impurities in germanium
Johan Lauwaert
Siegfried Segers
Eddy Simoen
Diederik Depla
Jan Vanhellemont
Paul Clauws
Freddy Callens
Henk Vrielinck
C3
Conference
2011
Germanium doping for improved silicon substrates and devices
Jan Vanhellemont
Jiahe Chen
Johan Lauwaert
Henk Vrielinck
W Xu
Deren Yang
JM Rafi
Hidenori Ohyama
Eddy Simoen
A1
Journal Article
in
JOURNAL OF CRYSTAL GROWTH
2011
Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
Jiahe Chen
E Cornagliotti
X Loozen
E Simoen
Jan Vanhellemont
Johan Lauwaert
Henk Vrielinck
J Poortmans
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2011
Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional
P Śpiewak
Jan Vanhellemont
KJ Kurzydłowski
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2011
Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2011
On the impact of heavy doping on grown-in defects in Czochralski-grown silicon
Xinpeng Zhang
W Xu
J Chen
Xiangyang Ma
Deren Yang
L Gong
D Tian
Jan Vanhellemont
P1
Conference
2011
Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method
Masashi Suezawa
Naoki Fukata
Jan Vanhellemont
Ichiro Yonenaga
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2011
Vacancy formation energy in silicon studied by quenching under hydrogen atmosphere
Masashi Suezawa
N Fukata
Ichiro Suezawa
Jan Vanhellemont
C3
Conference
2011
2010
Germanium doping of Si substrates for improved device characteristics and yield
Jan Vanhellemont
Jiahe Chen
Wubing Xu
Deren Yang
Joan Marc Rafi
Hidenori Ohyama
Eddy Simoen
P1
Conference
2010
Intrinsic point defect clustering during Czochralski growth of (silicon and) germanium
Jan Vanhellemont
Piotr Śpiewak
C1
Conference
2010
On the assumed impact of germanium doping on void formation in Czochralski-grown silicon
Jan Vanhellemont
XinPeng Zhang
WuBing Xu
JiaHe Chen
XiangYang Ma
DeRen Yang
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2010
On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon
Jan Vanhellemont
Masashi Suezawa
Ichiro Yonenaga
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2010
2009
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
H Ohyama
JM Rafi
F Campabadal
K Takakura
E Simoen
J Chen
Jan Vanhellemont
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2009
Electronic properties of titanium and chromium impurity centers in germanium
Johan Lauwaert
Jochen Van Gheluwe
Jan Vanhellemont
Eddy Simoen
Paul Clauws
A1
Journal Article
in
Journal of Applied Physics
2009
Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements
K Takakura
D Koga
H Ohyama
JM Rafi
Y Kayamoto
M Shibuya
H Yamamoto
Jan Vanhellemont
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2009
Experimental and theoretical study of the thermal solubility of the vacancy in germanium
Jan Vanhellemont
Johan Lauwaert
A Witecka
P Spiewak
I Romandic
Paul Clauws
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2009
Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
JM Rafi
Jan Vanhellemont
E Simoen
J Chen
M Zabala
F Campabadal
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2009
On intrinsic point defect cluster formation during Czochralski crystal growth
Jan Vanhellemont
Piotr Spiewak
Koji Sueoka
Igor Romandic
P1
Conference
2009
On the diffusion and activation of ion-implanted n-type dopants in germanium
Eddy Simoen
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2009
Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium
E Gaubas
A Uleckas
Jan Vanhellemont
A1
Journal Article
in
SUPERLATTICES AND MICROSTRUCTURES
2009
2008
A Comparison of Intrinsic Point Defect Properties in Si and Ge
Jan Vanhellemont
P SPIEWAK
K SUEOKA
E SIMOEN
I ROMANDIC
P1
Conference
2008
Ab-initio simulation of formation and diffusion energies of intrinsic point defects in Ge
Piotr Spiewak
Jan Vanhellemont
Koji Sueoka
Krzysztof J Kurzydlowski
Igor Romandic
P1
Conference
2008
Ab-initio simulation of formation and diffusion energies of intrinsic point defects in Ge
Piotr Spiewak
Krzysztof Kurzydlowski
Koji Sueoka
Jan Vanhellemont
Igor Romandic
C3
Conference
2008
Ab-initio simulation of self-interstitial in germanium
P Śpiewak
Jan Vanhellemont
K Sueoka
KJ Kurzydłowski
I Romandic
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2008
E-MRS 2008 Spring Conference Symposium J: Beyond silicon technology: materials and devices for post-Si CMOS: preface
Cor Claeys
Tony Peaker
Jean Fompeyrine
Martin Frank
Jan Vanhellemont
Editorial material
2008
First principles calculations of the formation energy and deep levels associated with the neutral and charged vacancy in germanium
P SPIEWAK
Jan Vanhellemont
K SUEOKA
KJ KURZYDLOWSKI
I ROMANDIC
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2008
First principles calculations of the formation energy of the neutral
P SPIEWAK
KJ KURZYDLOWSKI
K SUEOKA
I ROMAND
Jan Vanhellemont
P1
Conference
2008
Intrinsic point defect properties and engineering in silicon and germanium Czochralski crystal growth
Jan Vanhellemont
Piotr Spiewak
Koji Sueoka
Igor Romandic
Eddy Simoen
C1
Conference
2008
Metal implants-dependent carrier recombination characteristics in Ge
E Gaubas
A Uleckas
Jan Vanhellemont
W Geens
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2008
Microwave and infra red light absorption studies of carrier lifetime in silicon and germanium
E GAUBAS
Jan Vanhellemont
P1
Conference
2008
Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge
E GAUBAS
A ULECKAS
R GRIGONIS
V SIRUTKAITIS
Jan Vanhellemont
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2008
On the characterisation of grown-in defects in Czochralski-grown Si and Ge
Jan Vanhellemont
J VAN STEENBERGEN
F HOLSTEYNS
P ROUSSEL
M MEURIS
K MLYNARCZYK
P SPIEWAK
W GEENS
I ROMANDIC
A1
Journal Article
in
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2008
Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques
E. Gaubas
A. Uleckas
R. Grigonis
V. Sirutkaitis
Jan Vanhellemont
A1
Journal Article
in
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
2008
Vacancy dynamics in growing Czochralski germanium crystals
Piotr Spiewak
Krzysztof Kurzydlowski
Jan Vanhellemont
Igor Romandic
C3
Conference
2008
2007
Ab initio analysis of point defects in plane-stressed Si or Ge crystal
Koji Sueoka
Piotr Spiewak
Jan Vanhellemont
C3
Conference
2007
Ab initio analysis of point defects in plane-stressed Si or Ge crystals
Koji Sueoka
Piotr Spiewak
Jan Vanhellemont
C1
Conference
2007
Ab initio calculation of the formation energy of charged vacancies in germanium
P SPIEWAK
K SUEOKA
Jan Vanhellemont
KJ KURZYDLOWSKI
K MLYNARCZYK
P WABINSKI
I ROMANDIC
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2007
Brother silicon, sister germanium
Jan Vanhellemont
E Simoen
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2007
Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
E GAUBAS
Jan Vanhellemont
E SIMOEN
I ROMANDIC
W GEENS
Paul Clauws
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2007
Comparative study of carrier lifetime dependence on dopant concentration in silicon and germanium
E GAUBAS
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2007
Deep level transient spectroscopy of transition metal impurities in germanium
Paul Clauws
Jochen Van Gheluwe
Johan Lauwaert
E SIMOEN
Jan Vanhellemont
M MEURIS
Antoon Theuwis
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2007
Defect analysis in semiconductor materials based on p-n junction diode characteristics
Eddy Simoen
Cor Claeys
Jan Vanhellemont
Bookchapter
in
Defects and diffusion semiconductors : an annual retrospective IX
2007
Grown-in defects in germanium
Jan Vanhellemont
Eddy Simoen
Igor Romandic
Antoon Theuwis
Bookchapter
in
Germanium-based technologies : from materials to devices
2007
Lifetime and leakage current considerations in metal-doped germanium
E SIMOEN
C CLAEYS
S SIONCKE
J VAN STEENBERGEN
M MEURIS
Stefaan Forment
Jan Vanhellemont
Paul Clauws
Antoon Theuwis
A1
Journal Article
in
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2007
Molecular dynamics simulation of intrinsic point defects in germanium
P SPIEWAK
M MUZYK
KJ KURZYDLOWSKI
Jan Vanhellemont
K MLYNARCZYK
P WABINSKI
I ROMANDIC
A1
Journal Article
in
JOURNAL OF CRYSTAL GROWTH
2007
On the impact of metal impurities on the carrier lifetime in n-type germanium
E GAUBAS
Jan Vanhellemont
E SIMOEN
Paul Clauws
Antoon Theuwis
P1
Conference
2007
On the solubility and diffusivity of the intrinsic point defects in germanium
Jan Vanhellemont
P SPIEWAK
K SUEOKA
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2007
Recombination peculiarities in doped Ge
E GAUBAS
A ULECKAS
Jan Vanhellemont
Antoon Theuwis
A1
Journal Article
in
LITHUANIAN JOURNAL OF PHYSICS
2007
Simulation of vacancy cluster formation and binding energies in single crystal germanium
P SPIEWAK
KJ KURZYDLOWSKI
Jan Vanhellemont
P WABINSKI
K MLYNARCZYK
I ROMANDIC
P1
Conference
2007
2006
A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon
Jan Vanhellemont
Olivier DE GRYSE
Paul Clauws
A1
Journal Article
in
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2006
A deep-level transient spectroscopy study of transition metals in n-type germanium
Stefaan Forment
Jan Vanhellemont
Paul Clauws
J VAN STEENBERGEN
S SIONCKE
M MEURIS
E SIMOEN
Antoon Theuwis
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2006
Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals
K SUEOKA
Jan Vanhellemont
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2006
Brother silicon, sister germanium
Jan Vanhellemont
Eddy Simoen
C3
Conference
2006
Brother silicon, sister germanium
Jan Vanhellemont
Eddy R Simoen
C1
Conference
2006
Carrier lifetime studies in Ge using microwave and infrared light techniques
E GAUBAS
M BAUZA
A ULECKAS
Jan Vanhellemont
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2006
Comparative study of carrier lifetime variation with doping in Si and Ge
Eugenijus Gaubas
Jan Vanhellemont
C3
Conference
2006
Comparative study of carrier lifetime variations with doping in Si and Ge
Eugenijus Gaubas
Jan Vanhellemont
C1
Conference
2006
Dependence of carrier lifetime in germanium on resisitivity and carrier injection level
E GAUBAS
Jan Vanhellemont
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2006
Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy
Olivier De Gryse
Jan Vanhellemont
Paul Clauws
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2006
Infrared analysis of the precipitated oxide phase in silicon and germanium
O DE GRYSE
Piet Vanmeerbeek
Jan Vanhellemont
Paul Clauws
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2006
Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth
P SPIEWAK
KJ KURZYDLOWSKI
Jan Vanhellemont
Paul Clauws
P WABINSKI
K MLYNARCZYK
I ROMANDIC
Antoon Theuwis
A1
Journal Article
in
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2006
Simulation of point defect diffusion in germanium
Johan Lauwaert
S HENS
P SPIEWAK
D WAUTERS
Dirk Poelman
I ROMANDIC
Paul Clauws
Jan Vanhellemont
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2006
2005
Critical precipitate size revisited and implications for oxygen precipitation in silicon
Jan Vanhellemont
Olivier De Gryse
Paul Clauws
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2005
Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals
S HENS
Jan Vanhellemont
Dirk Poelman
Paul Clauws
I ROMANDIC
Antoon Theuwis
F HOLSTEYNS
J VAN STEENBERGEN
A1
Journal Article
in
APPLIED PHYSICS LETTERS
2005
Precipitation and extended defect formation in silicon
Jan Vanhellemont
Olivier De Gryse
Paul Clauws
P1
Conference
2005
Recent progress in understanding of lattice defects in Czochralski-grown germanium: catching-up with silicon
Jan Vanhellemont
S HENS
Johan Lauwaert
O DE GRYSE
Piet Vanmeerbeek
Dirk Poelman
P SPIEWAK
I ROMANDIC
Antoon Theuwis
Paul Clauws
A1
Journal Article
in
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI
2005
2004
Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy
Olivier DE GRYSE
Paul Clauws
Jan Vanhellemont
OI LEBEDEV
J VAN LANDUYT
E SIMOEN
C CLAEYS
A1
Journal Article
in
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
2004
Extended defects in silicon: an old and new story
Jan Vanhellemont
Olivier De Gryse
Paul Clauws
A1
Journal Article
in
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY
2004
Grown-in lattice defects and diffusion in Czochralski-grown germanium
Jan Vanhellemont
O DE GRYSE
S HENS
Piet Vanmeerbeek
Dirk Poelman
Paul Clauws
E SIMOEN
C CLAEYS
I ROMANDIC
Antoon Theuwis
et al.
A1
Journal Article
in
DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII -
2004
2003
A model for the formation of lattice defects at silicon oxide precipitates in silicon
Jan Vanhellemont
Olivier De Gryse
Paul Clauws
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2003
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon
Olivier De Gryse
Jan Vanhellemont
Paul Clauws
O LEBEDEV
J VAN LANDUYT
E SIMOEN
C CLAEYS
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2003
Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation
H. Ohyama
K. Kobayashi
Jan Vanhellemont
E. Simoen
C. Claeys
K. Takakura
T. Hirao
S. Onoda
A1
Journal Article
in
PHYSICA B-CONDENSED MATTER
2003
2002
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
Olivier De Gryse
Paul Clauws
Jan Vanhellemont
O LEBEDEV
J VAN LANDUYT
E SIMOEN
C CLAEYS
P1
Conference
2002
On the nucleation of bulk stacking faults in CZ silicon
Jan Vanhellemont
Olivier De Gryse
Paul Clauws
P1
Conference
2002
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.
O De Gryse
Paul Clauws
J Van Landuyt
O Lebedev
C Claeys
E Simoen
Jan Vanhellemont
A1
Journal Article
in
JOURNAL OF APPLIED PHYSICS
2002
1998
Accurate infrared absorption measurement of interstitial and precipitated oxygen in heavily doped silicon
Olivier De Gryse
Paul Clauws
L ROSSOU
J VAN LANDUYT
Jan Vanhellemont
Willy Mondelaers
P1
Conference
1998
1997
Study of point defects in silicon by means of positron annihilation with core electrons
J Kuriplach
Toon Van Hoecke
B Van Waeyenberge
Charles Dauwe
Danny Segers
N Balcaen
AL Morales
MA Trauwaert
Jan Vanhellemont
M Sob
A1
Journal Article
in
Materials Science Forum
1997