Research Explorer

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Researcher

Anja Blondeel

15 Results

2002

Uniformity Control in Sputter Deposition Processes.

W DE BOSSCHERAnja BlondeelGuy Buyle

2001

Defect analysis of n-type silicon strained layers.

E SIMOENR LOOP ROUSSELM CAYMAXH BENDERC CLAEYSHJ HERZOGAnja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.

SY ZHUChristophe DetavernierRoland VanmeirhaegheFelix CardonAnja BlondeelPaul ClauwsGP RUBZ LI

A1 Journal Article in SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation.

Anja BlondeelPaul ClauwsB DEPUYDT

A1 Journal Article in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Tin doping of silicon for controlling oxygen precipitation and radiation hardness.

C CLAEYSE SIMOENVB NEIMASHA KRAITCHINSKIIM KRAS'KOO PUZENKOAnja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF THE ELECTROCHEMICAL SOCIETY

2000

Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIN KRASKOO PUZENKOAnja BlondeelPaul Clauws

A1 Journal Article in APPLIED PHYSICS LETTERS

Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium.

Anja BlondeelPaul Clauws

A1 Journal Article in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

Tin doping effects in silicon

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIM KRAS'KOO PUZENKOAnja BlondeelPaul Clauws

Tin-related deep levels in proton-irradiated n-type silicon.

E SIMOENC CLAEYSVB NEIMASHA KRAITCHINSKIIN KRASKOO PUZENKOAnja BlondeelPaul Clauws

1999

A BEEM study of PtSi Schottky contacts on ion-milled Si

GP RUChristophe DetavernierRA DONATONAnja BlondeelPaul ClauwsRoland VanmeirhaegheFelix CardonK MAEXXP QUSY ZHU et al.

Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopy.

Anja BlondeelPaul Clauws

A1 Journal Article in PHYSICA B-CONDENSED MATTER

Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium.

Anja BlondeelPaul Clauws

A1 Journal Article in JOURNAL OF APPLIED PHYSICS

Quantitative spectroscopic determination of defects in germanium

Paul ClauwsAnja Blondeel

1998

Ontwikkeling van optische varianten van Deep Level Transient Spectroscopy voor de karakterisatie van hoog-zuiver n-type germanium

Anja BlondeelP. Clauws

1997

Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium.

Anja BlondeelPaul ClauwsD VYNCKE

A1 Journal Article in JOURNAL OF APPLIED PHYSICS